Council Regulation (EC) No 1504/2004 of 19 July 2004 amending and updating Regulation (EC) No 1334/2000 setting up a Community regime for the control of exports of dual-use items and technology

In forceVersion 2004-07-19from 2004-09-30

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Contents

Preamble
1. Article 1
2. Article 2
ANNEX
ANNEX I LIST OF DUAL-USE ITEMS AND TECHNOLOGY (referred to in Article 3 of Regulation (EC) No 1334/2000)
GENERAL NOTES TO ANNEX I 1.2.3.
NUCLEAR TECHNOLOGY NOTE (NTN) (To be read in conjunction with section E of Category 0)
GENERAL TECHNOLOGY NOTE (GTN) (To be read in conjunction with section E of Categories 1 to 9)
GENERAL SOFTWARE NOTE (GSN) (This note overrides any control within section D of Categories 0 to 9)
1. a.
EDITORIAL PRACTICES
DEFINITIONS OF TERMS USED IN THIS ANNEX
pt_11 a.
pt_35 a.
pt_39 a.
pt_45 a.
pt_50 a.
pt_53 a.
pt_61 a.
pt_68 a.
pt_69 a.
pt_84 a.
pt_99 a.
pt_102 a.
pt_137 a.
pt_182 a.
ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX
CATEGORY 0 NUCLEAR MATERIALS, FACILITIES, AND EQUIPMENT
0ASystems, Equipment and Components
0BTest, Inspection and Production Equipment
a.
b.
c.
13. a.
7. a.
5. a.
6. a.
0CMaterials a.
CATEGORY 1 MATERIALS, CHEMICALS, MICROORGANISMS & TOXINS
1ASystems, Equipment and Components Technical Note:
1ASystems, Equipment and Components a.
1. a.
1BTest, Inspection and Production Equipment
1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note:
1CMaterials Technical Note: a.
a.
b.
c.
1. Technical Note:
1. a.
d.
1CMaterials Technical Note: Technical Notes:
1. a.
2. a.
3. a.
4. a.
5. a.
1. Technical Note:
2. Technical Note:
1CMaterials Technical Note: Technical Notes: Technical Note: a.
1. a.
2. a.
1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: a.
1. a.
2. a.
a.
b.
1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: a.
a.
b.
1. Technical Note:
2. Technical Note:
2. a.
3. a.
6. a.
1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: a.
1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.
1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.
1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note:
2. a.
5. a.
1ETechnology a.
1. a.
3. a.
CATEGORY 2 MATERIALS PROCESSING
2ASystems, Equipment and Components Technical Note:
2ASystems, Equipment and Components a.
2. a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: Technical Note: Technical Notes: Technical Note:
2BTest, Inspection and Production Equipment Technical Notes:
2. a.
5. a.
1. a.
4. a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: a.
1. a.
2. a.
1. Technical Note:
2. a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.
1. a.
2. a.
a.
b.
c.
d.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes:
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: Technical Note: a.
2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: Technical Note: Technical Notes:
1. a.
2ETechnology a.
1. a.
2. a.
Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Table — Deposition techniques — Notes deposition techniques
5. a.
a.
b.
c.
d.
e.
f.
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CATEGORY 3 ELECTRONICS
3ASystems, Equipment and Components Technical Note: Technical Note: Technical Note:
3ASystems, Equipment and Components a.
1. a.
2. a.
3. a.
5. Technical Notes:
5. a.
6. a.
7. a.
10. a.
11. a.
12. Technical Note:
4. a.
4. a.
8. a.
5. Technical Note:
4. Technical Note:
3ASystems, Equipment and Components Technical Note: a.
3ASystems, Equipment and Components Technical Note: Technical Note: a.
3BTest, Inspection and Production Equipment
1. a.
2. a.
3CMaterials a.
3DSoftware Technical Note:
3DSoftware a.
3ETechnology Technical Note:
3ETechnology
CATEGORY 4 COMPUTERS
4ASystems, Equipment and Components
4BTest, Inspection and Production Equipment
4DSoftware a.
4ETechnology a.
Technical note on Composite Theoretical Performance (CTP) Abbreviations used in this Technical Note
TECHNICAL NOTE ON CTP
CATEGORY 5 TELECOMMUNICATIONS AND INFORMATION SECURITY
PART 1 TELECOMMUNICATIONS
5A1Systems, Equipment and Components Technical Note:
5A1Systems, Equipment and Components a.
1. a.
2. a.
3. a.
5. a.
6. Technical Note:
1. Technical Note:
5B1Test, Inspection and Production Equipment
1. Technical Note:
2. a.
5D1Software a.
1. Technical Note:
2. a.
5E1Technology
1. Technical Note:
2. a.
4. a.
PART 2 Note 3: Technical Note: INFORMATION SECURITY Cryptography Note
a.
b.
c.
d.
5A2Systems, Equipment and Components a.
1. Technical Notes:
2. a.
5B2Test, Inspection and Production Equipment
5D2Software a.
5E2Technology
CATEGORY 6 SENSORS AND LASERS
6ASystems, Equipment and Components a.
1. a.
3. a.
6. a.
a.
b.
2. a. Technical Note:
2. a.

THE COUNCIL OF THE EUROPEAN UNION,

Having regard to the Treaty establishing the European Community, and in particular Article 133 thereof,

Having regard to the proposal from the Commission,

Whereas:

(1) Council Regulation (EC) No 1334/2000 requires dual-use items (including software and technology) to be subject to effective control when they are exported from the Community.

(2) In order to enable the Member States and the Community to comply with their international commitments, Annex I to Regulation (EC) No 1334/2000 establishes the common list of dual-use items and technology referred to in Article 3 of that Regulation, which implements internationally agreed dual-use controls, including the Wassenaar Arrangement, the Missile Technology Control Regime (MTCR), the Nuclear Suppliers Group (NSG), the Australia Group and the Chemical Weapons Convention (CWC).

(3) Article 11 of Regulation (EC) No 1334/2000 provides for Annex I and Annex IV to be updated in conformity with the relevant obligations and commitments, and any modifications thereof that each Member State has accepted as a member of the international non-proliferation regimes and export control arrangements, or by ratification of relevant international treaties.

(4) Annex I to Regulation (EC) No 1334/2000 should be amended in order to take account of changes adopted by the Wassenaar Arrangement, the Australia Group and the Missile Technology Control Regime subsequent to the amendments made by Regulation No 149/2003 on 27 January 2003.

(5) Council Regulation (EC) No 885/2004 amended Part 3 of Annex II to Regulation (EC) No 1334/2000 in order to delete the Czech Republic, Hungary and Poland from the current list of countries for which the Community Export Authorisation applies.

(6) For ease of reference for export control authorities and operators, it is necessary to publish an updated and consolidated version of the Annexes to Regulation (EC) No 1334/2000, taking into account all the amendments accepted by the Member States in international forums during the period covering December 2002 to December 2003.

(7) Regulation (EC) No 1334/2000 should be amended accordingly,

HAS ADOPTED THIS REGULATION:

Article 1

The Annexes to Regulation (EC) No 1334/2000 shall be replaced by the text in the Annex to this Regulation.

Article 2

This Regulation shall enter into force on the 30th day following that of its publication in the Official Journal of the European Union.

This Regulation shall be binding in its entirety and directly applicable in all Member States. Done at Brussels, 19 July 2004. For the Council The President P. H. Donner

ANNEX

ANNEX I LIST OF DUAL-USE ITEMS AND TECHNOLOGY (referred to in Article 3 of Regulation (EC) No 1334/2000)

GENERAL NOTES TO ANNEX I 1.2.3.

For control of goods which are designed or modified for military use, see the relevant list(s) of controls on military goods maintained by individual Member States. References in this Annex that state SEE ALSO MILITARY GOODS CONTROLS refer to the same lists. The object of the controls contained in this Annex should not be defeated by the export of any non-controlled goods (including plant) containing one or more controlled components when the controlled component or components are the principal element of the goods and can feasibly be removed or used for other purposes. N.B.: In judging whether the controlled component or components are to be considered the principal element, it is necessary to weigh the factors of quantity, value and technological know-how involved and other special circumstances which might establish the controlled component or components as the principal element of the goods being procured. Goods specified in this Annex include both new and used goods.

NUCLEAR TECHNOLOGY NOTE (NTN) (To be read in conjunction with section E of Category 0)

The technology directly associated with any goods controlled in Category 0 is controlled according to the provisions of Category 0. Technology for the development, production or use of goods under control remains under control even when applicable to non-controlled goods. The approval of goods for export also authorizes the export to the same end-user of the minimum technology required for the installation, operation, maintenance and repair of the goods. Controls on technology transfer do not apply to information in the public domain or to basic scientific research.

GENERAL TECHNOLOGY NOTE (GTN) (To be read in conjunction with section E of Categories 1 to 9)

The export of technology which is required for the development, production or use of goods controlled in Categories 1 to 9, is controlled according to the provisions of Categories 1 to 9. Technologyrequired for the development, production or use of goods under control remains under control even when applicable to non-controlled goods. Controls do not apply to that technology which is the minimum necessary for the installation , operation, maintenance (checking) and repair of those goods which are not controlled or whose export has been authorised. N.B.: This does not release such technology specified in 1E002.e., 1E002.f., 8E002.a. and 8E002.b. Controls on technology transfer do not apply to information in the public domain, to basic scientific research or to the minimum necessary information for patent applications.

GENERAL SOFTWARE NOTE (GSN) (This note overrides any control within section D of Categories 0 to 9)

Categories 0 to 9 of this list do not control software which is either:

Generally available to the public by being: N.B.: Entry a. of the General Software Note does not release software specified in Category 5 — Part 2 (Information Security).

1. Sold from stock at retail selling points, without restriction, by means of:

1. a.

Over-the-counter transactions;

Mail order transactions;

Electronic transactions; or

Telephone order transactions; and

2. Designed for installation by the user without further substantial support by the supplier; or

In the public domain.

EDITORIAL PRACTICES

In accordance with the rules set out in paragraph 101 on page 86 of the interinstitutional style guide (1997 edition), for texts in English published in the Official Journal of the European Communities:

a comma is used to separate the whole number from the decimals,

whole numbers are presented in series of three, each series being separated by a thin space.

DEFINITIONS OF TERMS USED IN THIS ANNEX

Definitions of terms between single quotation marks are given in a Technical Note to the relevant item. Definitions of terms between double quotation marks are as follows: N.B.: Category references are given in brackets after the defined term.

Accuracy (2 6), usually measured in terms of inaccuracy, means the maximum deviation, positive or negative, of an indicated value from an accepted standard or true value.

Active flight control systems (7) are systems that function to prevent undesirable aircraft and missile motions or structural loads by autonomously processing outputs from multiple sensors and then providing necessary preventive commands to effect automatic control.

Active pixel (6 8) is a minimum (single) element of the solid state array which has a photoelectric transfer function when exposed to light (electromagnetic) radiation.

Adapted for use in war (1) means any modification or selection (such as altering purity, shelf life, virulence, dissemination characteristics, or resistence to UV radiation) designed to increase the effectiveness in producing casualties in humans or animals, degrading equipment or damaging crops or the environment.

Aircraft (1 7 9) means a fixed wing, swivel wing, rotary wing (helicopter), tilt rotor or tilt-wing airborne vehicle. N.B.: See also civil aircraft.

All compensations available (2) means after all feasible measures available to the manufacturer to minimise all systematic positioning errors for the particular machine-tool model are considered.

Allocated by the ITU (3 5) means the allocation of frequency bands according to the ITU Radio Regulations (Edition 1998) for primary, permitted and secondary services. N.B.: Additional and alternative allocations are not included.

Angular position deviation (2) means the maximum difference between angular position and the actual, very accurately measured angular position after the workpiece mount of the table has been turned out of its initial position (ref. VDI/VDE 2617, Draft: Rotary tables on coordinate measuring machines).

Asymmetric algorithm (5) means a cryptographic algorithm using different, mathematically-related keys for encryption and decryption. N.B.: A common use of asymmetric algorithms is key management.

Automatic target tracking (6) means a processing technique that automatically determines and provides as output an extrapolated value of the most probable position of the target in real time.

Basic gate propagation delay time (3) means the propagation delay time value corresponding to the basic gate used in a monolithic integrated circuit. For a family of monolithic integrated circuits, this may be specified either as the propagation delay time per typical gate within the given family or as the typical propagation delay time per gate within the given family. N.B. 1:Basic gate propagation delay time is not to be confused with the input/output delay time of a complex monolithic integrated circuit. N.B. 2:Family consists of all integrated circuits to which all of the following are applied as their manufacturing methodology and specifications except their respective functions:

pt_11 a.

The common hardware and software architecture;

The common design and process technology; and

The common basic characteristics.

Basic scientific research (GTN NTN) means experimental or theoretical work undertaken principally to acquire new knowledge of the fundamental principles of phenomena or observable facts, not primarily directed towards a specific practical aim or objective.

Bias (accelerometer) (7) means an accelerometer output when no acceleration is applied.

Camming (2) means axial displacement in one revolution of the main spindle measured in a plane perpendicular to the spindle faceplate, at a point next to the circumference of the spindle faceplate (Reference: ISO 230/1 1986, paragraph 5.63).

Carbon fibre preforms (1) means an ordered arrangement of uncoated or coated fibres intended to constitute a framework of a part before the matrix is introduced to form a composite.

CE is equivalent to computing element.

CEP (circle of equal probability) (7) is a measure of accuracy; the radius of the circle centred at the target, at a specific range, in which 50 % of the payloads impact.

Chemical laser (6) means a laser in which the excited species is produced by the output energy from a chemical reaction.

Chemical mixture (1) means a solid, liquid or gaseous product made up of two or more components which do not react together under the conditions under which the mixture is stored.

Circulation-controlled anti-torque or circulation controlled direction control systems (7) are systems that use air blown over aerodynamic surfaces to increase or control the forces generated by the surfaces.

Civil aircraft (1 7 9) means those aircraft listed by designation in published airworthiness certification lists by the civil aviation authorities to fly commercial civil internal and external routes or for legitimate civil, private or business use. N.B.: See also aircraft.

Commingled (1) means filament to filament blending of thermoplastic fibres and reinforcement fibres in order to produce a fibre reinforcement matrix mix in total fibre form.

Comminution (1) means a process to reduce a material to particles by crushing or grinding.

Common channel signalling (5) is a signalling method in which a single channel between exchanges conveys, by means of labelled messages, signalling information relating to a multiplicity of circuits or calls and other information such as that used for network management.

Communications channel controller (4) means the physical interface which controls the flow of synchronous or asynchronous digital information. It is an assembly that can be integrated into computer or telecommunications equipment to provide communications access.

Composite (1 2 6 8 9) means a matrix and an additional phase or additional phases consisting of particles, whiskers, fibres or any combination thereof, present for a specific purpose or purposes.

Composite theoretical performance (CTP) (3 4) is a measure of computational performance given in millions of theoretical operations per second (Mtops), calculated using the aggregation of computing elements (CE). N.B.: See Category 4, Technical Note.

Compound rotary table (2) means a table allowing the workpiece to rotate and tilt about two non-parallel axes, which can be coordinated simultaneously for contouring control.

Computing element (CE) (4) means the smallest computational unit that produces an arithmetic or logic result.

Contouring control (2) means two or more numerically controlled motions operating in accordance with instructions that specify the next required position and the required feed rates to that position. These feed rates are varied in relation to each other so that a desired contour is generated (ref. ISO/DIS 2806 - 1980).

Critical temperature (1 3 6) (sometimes referred to as the transition temperature) of a specific superconductive material means the temperature at which the material loses all resistance to the flow of direct electrical current.

Cryptography (5) means the discipline which embodies principles, means and methods for the transformation of data in order to hide its information content, prevent its undetected modification or prevent its unauthorized use. Cryptography is limited to the transformation of information using one or more secret parameters (e.g., crypto variables) or associated key management. N.B.:Secret parameter: a constant or key kept from the knowledge of others or shared only within a group.

CTP is equivalent to composite theoretical performance.

Data-Based Referenced Navigation (DBRN) (7) Systems means systems which use various sources of previously measured geo-mapping data integrated to provide accurate navigation information under dynamic conditions. Data sources include bathymetric maps, stellar maps, gravity maps, magnetic maps or 3-D digital terrain maps.

Deformable mirrors (6) (also known as adaptive optic mirrors) means mirrors having:

pt_35 a.

A single continuous optical reflecting surface which is dynamically deformed by the application of individual torques or forces to compensate for distortions in the optical waveform incident upon the mirror; or

Multiple optical reflecting elements that can be individually and dynamically repositioned by the application of torques or forces to compensate for distortions in the optical waveform incident upon the mirror.

Depleted uranium (0) means uranium depleted in the isotope 235 below that occurring in nature.

Development (GTN NTN All) is related to all phases prior to serial production, such as: design, design research, design analyses, design concepts, assembly and testing of prototypes, pilot production schemes, design data, process of transforming design data into a product, configuration design, integration design, layouts.

Diffusion bonding (1 2 9) means a solid state molecular joining of at least two separate metals into a single piece with a joint strength equivalent to that of the weakest material.

Digital computer (4 5) means equipment which can, in the form of one or more discrete variables, perform all of the following: N.B.: Modifications of a stored sequence of instructions include replacement of fixed storage devices, but not a physical change in wiring or interconnections.

pt_39 a.

Accept data;

Store data or instructions in fixed or alterable (writable) storage devices;

Process data by means of a stored sequence of instructions which is modifiable; and

Provide output of data.

Digital transfer rate means the total bit rate of the information that is directly transferred on any type of medium. N.B.: See also total digital transfer rate.

Direct-acting hydraulic pressing (2) means a deformation process which uses a fluid-filled flexible bladder in direct contact with the workpiece.

Drift rate (gyro) (7) means the time rate of output deviation from the desired output. It consists of random and systematic components and is expressed as an equivalent input angular displacement per unit time with respect to inertial space.

Dynamic adaptive routing (5) means automatic rerouting of traffic based on sensing and analysis of current actual network conditions. N.B.: This does not include cases of routing decisions taken on predefined information.

Dynamic signal analysers (3) means signal analysers which use digital sampling and transformation techniques to form a Fourier spectrum display of the given waveform including amplitude and phase information. N.B.: See also signal analysers.

Effective gramme (0 1) of special fissile material means:

pt_45 a.

For plutonium isotopes and uranium-233, the isotope weight in grammes;

For uranium enriched 1 per cent or greater in the isotope uranium-235, the element weight in grammes multiplied by the square of its enrichment expressed as a decimal weight fraction;

For uranium enriched below 1 per cent in the isotope uranium-235, the element weight in grammes multiplied by 0,0001;

Electronic assembly (3 4 5) means a number of electronic components (i.e., circuit elements, discrete components, integrated circuits, etc.) connected together to perform (a) specific function(s), replaceable as an entity and normally capable of being disassembled. N.B. 1:Circuit element: a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc. N.B. 2:Discrete component: a separately packaged circuit element with its own external connections.

Electronically steerable phased array antenna (5 6) means an antenna which forms a beam by means of phase coupling, i.e., the beam direction is controlled by the complex excitation coefficients of the radiating elements and the direction of that beam can be varied in azimuth or in elevation, or both, by application, both in transmission and reception, of an electrical signal.

End-effectors (2) means grippers, active tooling units and any other tooling that is attached to the baseplate on the end of a robot manipulator arm. N.B.:Active tooling unit means a device for applying motive power, process energy or sensing to the workpiece.

Equivalent Density (6) means the mass of an optic per unit optical area projected onto the optical surface.

Expert systems (7) mean systems providing results by application of rules to data which are stored independently of the programme and capable of any of the following:

pt_50 a.

Modifying automatically the source code introduced by the user;

Providing knowledge linked to a class of problems in quasi-natural language; or

Acquiring the knowledge required for their development (symbolic training).

FADEC is equivalent to full authority digital engine control.

Fault tolerance (4) is the capability of a computer system, after any malfunction of any of its hardware or software components, to continue to operate without human intervention, at a given level of service that provides: continuity of operation, data integrity and recovery of service within a given time.

Fibrous or filamentary materials (0 1 2 8) include:

pt_53 a.

Continuous monofilaments;

Continuous yarns and rovings;

Tapes, fabrics, random mats and braids;

Chopped fibres, staple fibres and coherent fibre blankets;

Whiskers, either monocrystalline or polycrystalline, of any length;

Aromatic polyamide pulp.

Film type integrated circuit (3) means an array of circuit elements and metallic interconnections formed by deposition of a thick or thin film on an insulating substrate. N.B.:Circuit element is a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc.

Fixed (5) means that the coding or compression algorithm cannot accept externally supplied parameters (e.g., cryptographic or key variables) and cannot be modified by the user.

Flight control optical sensor array (7) is a network of distributed optical sensors, using laser beams, to provide real-time flight control data for on-board processing.

Flight path optimisation (7) is a procedure that minimizes deviations from a four-dimensional (space and time) desired trajectory based on maximizing performance or effectiveness for mission tasks.

Focal plane array (6) means a linear or two-dimensional planar layer, or combination of planar layers, of individual detector elements, with or without readout electronics, which work in the focal plane. N.B.: This is not intended to include a stack of single detector elements or any two, three or four element detectors provided time delay and integration is not performed within the element.

Fractional bandwidth (3) means the instantaneous bandwidth divided by the centre frequency, expressed as a percentage.

Frequency hopping (5) means a form of spread spectrum in which the transmission frequency of a single communication channel is made to change by a random or pseudo-random sequence of discrete steps.

Frequency switching time (3 5) means the maximum time (i.e., delay), taken by a signal, when switched from one selected output frequency to another selected output frequency, to reach:

pt_61 a.

A frequency within 100 Hz of the final frequency; or

An output level within 1 dB of the final output level.

Frequency synthesiser (3) means any kind of frequency source or signal generator, regardless of the actual technique used, providing a multiplicity of simultaneous or alternative output frequencies, from one or more outputs, controlled by, derived from or disciplined by a lesser number of standard (or master) frequencies.

Full Authority Digital Engine Control (FADEC) (7 9) means an electronic control system for gas turbine or combined cycle engines utilising a digital computer to control the variables required to regulate engine thrust or shaft power output throughout the engine operating range from the beginning of fuel metering to fuel shutoff.

Gas Atomisation (1) means a process to reduce a molten stream of metal alloy to droplets of 500 micrometre diameter or less by a high pressure gas stream.

Geographically dispersed (6) is where each location is distant from any other more than 1500 m in any direction. Mobile sensors are always considered geographically dispersed.

Guidance set (7) means systems that integrate the process of measuring and computing a vehicles position and velocity (i.e. navigation) with that of computing and sending commands to the vehicles flight control systems to correct the trajectory.

Hot isostatic densification (2) means the process of pressurising a casting at temperatures exceeding 375 K (102 °C) in a closed cavity through various media (gas, liquid, solid particles, etc.) to create equal force in all directions to reduce or eliminate internal voids in the casting.

Hybrid computer (4) means equipment which can perform all of the following:

pt_68 a.

Accept data;

Process data, in both analogue and digital representations; and

Provide output of data.

Hybrid integrated circuit (3) means any combination of integrated circuit(s), or integrated circuit with circuit elements or discrete components connected together to perform (a) specific function(s), and having all of the following characteristics: N.B. 1:Circuit element: a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc. N.B. 2:Discrete component: a separately packaged circuit element with its own external connections.

pt_69 a.

Containing at least one unencapsulated device;

Connected together using typical IC production methods;

Replaceable as an entity; and

Not normally capable of being disassembled.

Image enhancement (4) means the processing of externally derived information-bearing images by algorithms such as time compression, filtering, extraction, selection, correlation, convolution or transformations between domains (e.g., fast Fourier transform or Walsh transform). This does not include algorithms using only linear or rotational transformation of a single image, such as translation, feature extraction, registration or false coloration.

Immunotoxin (1) is a conjugate of one cell specific monoclonal antibody and a toxin or sub-unit of toxin, that selectively affects diseased cells.

In the public domain (GTN NTN GSN), as it applies herein, means technology or software which has been made available without restrictions upon its further dissemination (copyright restrictions do not remove technology or software from being in the public domain).

Information security (4 5) is all the means and functions ensuring the accessibility, confidentiality or integrity of information or communications, excluding the means and functions intended to safeguard against malfunctions. This includes cryptography, cryptanalysis, protection against compromising emanations and computer security. N.B.:Cryptanalysis: analysis of a cryptographic system or its inputs and outputs to derive confidential variables or sensitive data, including clear text.

Instantaneous bandwidth (3 5 7) means the bandwidth over which output power remains constant within 3 dB without adjustment of other operating parameters.

Instrumented range (6) means the specified unambiguous display range of a radar.

Insulation (9) is applied to the components of a rocket motor, i.e. the case, nozzle, inlets, case closures, and includes cured or semi-cured compounded rubber sheet stock containing an insulating or refractory material. It may also be incorporated as stress relief boots or flaps.

Interconnected radar sensors (6) means two or more radar sensors are interconnected when they mutually exchange data in real time.

Interior lining (9) is suited for the bond interface between the solid propellant and the case or insulating liner. Usually a liquid polymer based dispersion of refractory or insulating materials, e.g. carbon filled hydroxyl terminated polybutadiene (HTPB) or other polymer with added curing agents sprayed or screeded over a case interior.

Intrinsic Magnetic Gradiometer (6) is a single magnetic field gradient sensing element and associated electronics the output of which is a measure of magnetic field gradient. N.B.: See also magnetic gradiometer.

Isolated live cultures (1) includes live cultures in dormant form and in dried preparations.

Isostatic presses (2) mean equipment capable of pressurising a closed cavity through various media (gas, liquid, solid particles, etc.) to create equal pressure in all directions within the cavity upon a workpiece or material.

Laser (0 2 3 5 6 7 8 9) is an assembly of components which produce both spatially and temporally coherent light that is amplified by stimulated emission of radiation. N.B.: See also:

Chemical laser;

Q-switched laser;

Super High Power Laser;

Transfer laser.

Linearity (2) (usually measured in terms of non-linearity) means the maximum deviation of the actual characteristic (average of upscale and downscale readings), positive or negative, from a straight line so positioned as to equalise and minimise the maximum deviations.

Local area network (4) is a data communication system having all of the following characteristics: N.B.:Data device means equipment capable of transmitting or receiving sequences of digital information.

pt_84 a.

Allows an arbitrary number of independent data devices to communicate directly with each other; and

Is confined to a geographical area of moderate size (e.g., office building, plant, campus, warehouse).

Magnetic Gradiometers (6) are instruments designed to detect the spatial variation of magnetic fields from sources external to the instrument. They consist of multiple magnetometers and associated electronics the output of which is a measure of magnetic field gradient. N.B.: See also intrinsic magnetic gradiometer.

Magnetometers (6) are instruments designed to detect magnetic fields from sources external to the instrument. They consist of a single magnetic field sensing element and associated electronics the output of which is a measure of the magnetic field.

Main storage (4) means the primary storage for data or instructions for rapid access by a central processing unit. It consists of the internal storage of a digital computer and any hierarchical extension thereto, such as cache storage or non-sequentially accessed extended storage.

Materials resistant to corrosion by UF6 (0) may be copper, stainless steel, aluminium, aluminium oxide, aluminium alloys, nickel or alloy containing 60 weight percent or more nickel and UF6- resistant fluorinated hydrocarbon polymers, as appropriate for the type of separation process.

Matrix (1 2 8 9) means a substantially continuous phase that fills the space between particles, whiskers or fibres.

Measurement uncertainty (2) is the characteristic parameter which specifies in what range around the output value the correct value of the measurable variable lies with a confidence level of 95 %. It includes the uncorrected systematic deviations, the uncorrected backlash and the random deviations (ref. ISO 10360-2, or VDI/VDE 2617).

Mechanical Alloying (1) means an alloying process resulting from the bonding, fracturing and rebonding of elemental and master alloy powders by mechanical impact. Non-metallic particles may be incorporated in the alloy by addition of the appropriate powders.

Melt Extraction (1) means a process to solidify rapidly and extract a ribbon-like alloy product by the insertion of a short segment of a rotating chilled block into a bath of a molten metal alloy. N.B.:Solidify rapidly: solidification of molten material at cooling rates exceeding 1000 K/s.

Melt Spinning (1) means a process to solidify rapidly a molten metal stream impinging upon a rotating chilled block, forming a flake, ribbon or rod-like product. N.B.:Solidify rapidly: solidification of molten material at cooling rates exceeding 1000 K/s.

Microcomputer microcircuit (3) means a monolithic integrated circuit or multichip integrated circuit containing an arithmetic logic unit (ALU) capable of executing general purpose instructions from an internal storage, on data contained in the internal storage. N.B.: The internal storage may be augmented by an external storage.

Microprocessor microcircuit (3) means a monolithic integrated circuit or multichip integrated circuit containing an arithmetic logic unit (ALU) capable of executing a series of general purpose instructions from an external storage. N.B. 1: The microprocessor microcircuit normally does not contain integral user-accessible storage, although storage present on-the-chip may be used in performing its logic function. N.B. 2: This includes chip sets which are designed to operate together to provide the function of a microprocessor microcircuit.

Microorganisms (1 2) means bacteria, viruses, mycoplasms, rickettsiae, chlamydiae or fungi, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures.

Missiles (1 3 6 7 9) means complete rocket systems and unmanned air vehicle systems, capable of delivering at least 500 kg payload to a range of at least 300 km.

Monofilament (1) or filament is the smallest increment of fibre, usually several micrometres in diameter.

Monolithic integrated circuit (3) means a combination of passive or active circuit elements or both which: N.B.:Circuit element is a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc.

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Are formed by means of diffusion processes, implantation processes or deposition processes in or on a single semiconducting piece of material, a so-called chip;

Can be considered as indivisibly associated; and

Perform the function(s) of a circuit.

Monospectral imaging sensors (6) are capable of acquisition of imaging data from one discrete spectral band.

Multichip integrated circuit (3) means two or more monolithic integrated circuits bonded to a common substrate.

Multi-data-stream processing (4) means the microprogramme or equipment architecture technique which permits simultaneous processing of two or more data sequences under the control of one or more instruction sequences by means such as: N.B.:Microprogramme means a sequence of elementary instructions, maintained in a special storage, the execution of which is initiated by the introduction of its reference instruction into an instruction register.

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Single Instruction Multiple Data (SIMD) architectures such as vector or array processors;

Multiple Single Instruction Multiple Data (MSIMD) architectures;

Multiple Instruction Multiple Data (MIMD) architectures, including those which are tightly coupled, closely coupled or loosely coupled; or

Structured arrays of processing elements, including systolic arrays.

Multispectral imaging sensors (6) are capable of simultaneous or serial acquisition of imaging data from two or more discrete spectral bands. Sensors having more than twenty discrete spectral bands are sometimes referred to as hyperspectral imaging sensors.

Natural uranium (0) means uranium containing the mixtures of isotopes occurring in nature.

Network access controller (4) means a physical interface to a distributed switching network. It uses a common medium which operates throughout at the same digital transfer rate using arbitration (e.g., token or carrier sense) for transmission. Independently from any other, it selects data packets or data groups (e.g., IEEE 802) addressed to it. It is an assembly that can be integrated into computer or telecommunications equipment to provide communications access.

Neural computer (4) means a computational device designed or modified to mimic the behaviour of a neuron or a collection of neurons, i.e., a computational device which is distinguished by its hardware capability to modulate the weights and numbers of the interconnections of a multiplicity of computational components based on previous data.

Noise level (6) means an electrical signal given in terms of power spectral density. The relation between noise level expressed in peak-to-peak is given by S2pp = 8 No(f2–f1), where Spp is the peak-to-peak value of the signal (e.g., nanoteslas), No is the power spectral density (e.g., (nanotesla)2/Hz) and (f2–f1) defines the bandwidth of interest.

Nuclear reactor (0) means the items within or attached directly to the reactor vessel, the equipment which controls the level of power in the core, and the components which normally contain, come into direct contact with or control the primary coolant of the reactor core.

Numerical control (2) means the automatic control of a process performed by a device that makes use of numeric data usually introduced as the operation is in progress (ref. ISO 2382).

Object code (9) means an equipment executable form of a convenient expression of one or more processes (source code (source language)) which has been converted by programming system.

Optical amplification (5), in optical communications, means an amplification technique that introduces a gain of optical signals that have been generated by a separate optical source, without conversion to electrical signals, i.e., using semiconductor optical amplifiers, optical fibre luminescent amplifiers.

Optical computer (4) means a computer designed or modified to use light to represent data and whose computational logic elements are based on directly coupled optical devices.

Optical integrated circuit (3) means a monolithic integrated circuit or a hybrid integrated circuit, containing one or more parts designed to function as a photosensor or photoemitter or to perform (an) optical or (an) electro-optical function(s).

Optical switching (5) means the routing of or switching of signals in optical form without conversion to electrical signals.

Overall current density (3) means the total number of ampere-turns in the coil (i.e., the sum of the number of turns multiplied by the maximum current carried by each turn) divided by the total cross-section of the coil (comprising the superconducting filaments, the metallic matrix in which the superconducting filaments are embedded, the encapsulating material, any cooling channels, etc.).

Participating state (7 9) is a state participating in the Wassenaar Arrangement. (See www.wassenaar.org)

Peak power (6), means energy per pulse in joules divided by the pulse duration in seconds.

Personalized smart card (5) means a smart card containing a microcircuit which has been programmed for a specific application and cannot be reprogrammed for any other application by the user.

Power management (7) means changing the transmitted power of the altimeter signal so that received power at the aircraft altitude is always at the minimum necessary to determine the altitude.

Pressure transducers (2) are devices that convert pressure measurements into an electrical signal.

Previously separated (0 1) means the application of any process intended to increase the concentration of the controlled isotope.

Primary flight control (7) means an aircraft stability or manoeuvering control using force/moment generators, i.e., aerodynamic control surfaces or propulsive thrust vectoring.

Principal element (4), as it applies in Category 4, is a principal element when its replacement value is more than 35 % of the total value of the system of which it is an element. Element value is the price paid for the element by the manufacturer of the system, or by the system integrator. Total value is the normal international selling price to unrelated parties at the point of manufacture or consolidation of shipment.

Production (GTN NTN All) means all production phases, such as: construction, production engineering, manufacture, integration, assembly (mounting), inspection, testing, quality assurance.

Production equipment (1 7 9) means tooling, templates, jigs, mandrels, moulds, dies, fixtures, alignment mechanisms, test equipment, other machinery and components therefor, limited to those specially designed or modified for development or for one or more phases of production.

Production facilities (7 9) means equipment and specially designed software therefor integrated into installations for development or for one or more phases of production.

Programme (2 6) means a sequence of instructions to carry out a process in, or convertible into, a form executable by an electronic computer.

Pulse compression (6) means the coding and processing of a radar signal pulse of long time duration to one of short time duration, while maintaining the benefits of high pulse energy.

Pulse duration (6) is the duration of a laser pulse measured at Full Width Half Intensity (FWHI) levels.

Q-switched laser (6) means a laser in which the energy is stored in the population inversion or in the optical resonator and subsequently emitted in a pulse.

Radar frequency agility (6) means any technique which changes, in a pseudo-random sequence, the carrier frequency of a pulsed radar transmitter between pulses or between groups of pulses by an amount equal to or larger than the pulse bandwidth.

Radar spread spectrum (6) means any modulation technique for spreading energy originating from a signal with a relatively narrow frequency band, over a much wider band of frequencies, by using random or pseudo-random coding.

Real-time bandwidth (2 3) for dynamic signal analysers is the widest frequency range which the analyser can output to display or mass storage without causing any discontinuity in the analysis of the input data. For analysers with more than one channel, the channel configuration yielding the widest real-time bandwidth shall be used to make the calculation.

Real time processing (6 7) means the processing of data by a computer system providing a required level of service, as a function of available resources, within a guaranteed response time, regardless of the load of the system, when stimulated by an external event.

Required (GTN 1-9), as applied to technology or software, refers to only that portion of technology or software which is peculiarly responsible for achieving or extending the controlled performance levels, characteristics or functions. Such requiredtechnology or software may be shared by different goods.

Resolution (2) means the least increment of a measuring device; on digital instruments, the least significant bit (ref. ANSI B-89.1.12).

Robot (2 8) means a manipulation mechanism, which may be of the continuous path or of the point-to-point variety, may use sensors, and has all the following characteristics: N.B.: The above definition does not include the following devices:

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Is multifunctional;

Is capable of positioning or orienting material, parts, tools or special devices through variable movements in three dimensional space;

Incorporates three or more closed or open loop servo-devices which may include stepping motors; and

Has user accessible programmability by means of teach/playback method or by means of an electronic computer which may be a programmable logic controller, i.e., without mechanical intervention.

1. Manipulation mechanisms which are only manually/teleoperator controllable;

2. Fixed sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is mechanically limited by fixed stops, such as pins or cams. The sequence of motions and the selection of paths or angles are not variable or changeable by mechanical, electronic or electrical means;

3. Mechanically controlled variable sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is mechanically limited by fixed, but adjustable stops, such as pins or cams. The sequence of motions and the selection of paths or angles are variable within the fixed programme pattern. Variations or modifications of the programme pattern (e.g., changes of pins or exchanges of cams) in one or more motion axes are accomplished only through mechanical operations;

4. Non-servo-controlled variable sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is variable but the sequence proceeds only by the binary signal from mechanically fixed electrical binary devices or adjustable stops;

5. Stacker cranes defined as Cartesian coordinate manipulator systems manufactured as an integral part of a vertical array of storage bins and designed to access the contents of those bins for storage or retrieval.

Rotary atomisation (1) means a process to reduce a stream or pool of molten metal to droplets to a diameter of 500 micrometre or less by centrifugal force.

Roving (1) is a bundle (typically 12-120) of approximately parallel strands. N.B.:Strand is a bundle of monofilaments (typically over 200) arranged approximately parallel.

Run-out (2) (out-of-true running) means radial displacement in one revolution of the main spindle measured in a plane perpendicular to the spindle axis at a point on the external or internal revolving surface to be tested (Reference: ISO 230/1 1986, paragraph 5.61).

Scale factor (gyro or accelerometer) (7) means the ratio of change in output to a change in the input intended to be measured. Scale factor is generally evaluated as the slope of the straight line that can be fitted by the method of least squares to input-output data obtained by varying the input cyclically over the input range.

Settling time (3) means the time required for the output to come within one-half bit of the final value when switching between any two levels of the converter.

SHPL is equivalent to super high power laser.

Signal analysers (3) means apparatus capable of measuring and displaying basic properties of the single-frequency components of multi-frequency signals.

Signal processing (3 4 5 6) means the processing of externally derived information-bearing signals by algorithms such as time compression, filtering, extraction, selection, correlation, convolution or transformations between domains (e.g., fast Fourier transform or Walsh transform).

Software (GSN All) means a collection of one or more programmes or microprogrammes fixed in any tangible medium of expression. N.B.:Microprogramme means a sequence of elementary instructions, maintained in a special storage, the execution of which is initiated by the introduction of its reference instruction into an instruction register.

Source code (or source language) (4 6 7 9) is a convenient expression of one or more processes which may be turned by a programming system into equipment executable form (object code (or object language)).

Spacecraft (7 9) means active and passive satellites and space probes.

Space qualified (3 6) refers to products designed, manufactured and tested to meet the special electrical, mechanical or environmental requirements for use in the launch and deployment of satellites or high altitude flight systems operating at altitudes of 100 km or higher.

Special fissile material (0) means plutonium-239, uranium-233, uranium enriched in the isotopes 235 or 233, and any material containing the foregoing.

Specific modulus (0 1 9) is Young's modulus in pascals, equivalent to N/m2 divided by specific weight in N/m3, measured at a temperature of (296 ± 2) K ((23 ± 2) °C) and a relative humidity of (50 ± 5) %.

Specific tensile strength (0 1 9) is ultimate tensile strength in pascals, equivalent to N/m2 divided by specific weight in N/m3, measured at a temperature of (296 ± 2) K ((23 ± 2) °C) and a relative humidity of (50 ± 5) %.

Splat Quenching (1) means a process to solidify rapidly a molten metal stream impinging upon a chilled block, forming a flake-like product. N.B.:Solidify rapidly solidification of molten material at cooling rates exceeding 1000 K/s.

Spread spectrum (5) means the technique whereby energy in a relatively narrow-band communication channel is spread over a much wider energy spectrum.

Spread spectrum radar (6) - see Radar spread spectrum

Stability (7) means the standard deviation (1 sigma) of the variation of a particular parameter from its calibrated value measured under stable temperature conditions. This can be expressed as a function of time.

States (not) Party to the Chemical Weapon Convention (1) are those states for which the Convention on the Prohibition of the Development, Production, Stockpiling and Use of Chemical Weapons has (not) entered into force. (See www.opcw.org)

Stored programme controlled (2 3 8) means controlled by using instructions stored in an electronic storage which a processor can execute in order to direct the performance of predetermined functions. N.B.: Equipment may be stored programme controlled whether the electronic storage is internal or external to the equipment.

Substrate (3) means a sheet of base material with or without an interconnection pattern and on which or within which discrete components or integrated circuits or both can be located. N.B. 1:Discrete component: a separately packaged circuit element with its own external connections. N.B. 2:Circuit element: a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc.

Substrate blanks (6) means monolithic compounds with dimensions suitable for the production of optical elements such as mirrors or optical windows.

Sub-unit of toxin (1) is a structurally and functionally discrete component of a whole toxin.

Superalloys (2 9) means nickel-, cobalt- or iron-base alloys having strengths superior to any alloys in the AISI 300 series at temperatures over 922 K (649 °C) under severe environmental and operating conditions.

Superconductive (1 3 6 8) means materials, i.e., metals, alloys or compounds, which can lose all electrical resistance, i.e., which can attain infinite electrical conductivity and carry very large electrical currents without Joule heating. N.B.: The superconductive state of a material is individually characterised by a critical temperature, a critical magnetic field, which is a function of temperature, and a critical current density which is, however, a function of both magnetic field and temperature.

Super High Power Laser (SHPL) (6) means a laser capable of delivering (the total or any portion of) the output energy exceeding 1 kJ within 50 ms or having an average or CW power exceeding 20 kW.

Superplastic forming (1 2) means a deformation process using heat for metals that are normally characterised by low values of elongation (less than 20 %) at the breaking point as determined at room temperature by conventional tensile strength testing, in order to achieve elongations during processing which are at least 2 times those values.

Symmetric algorithm (5) means a cryptographic algorithm using an identical key for both encryption and decryption. N.B.: A common use of symmetric algorithms is confidentiality of data.

System tracks (6) means processed, correlated (fusion of radar target data to flight plan position) and updated aircraft flight position report available to the Air Traffic Control centre controllers.

Systolic array computer (4) means a computer where the flow and modification of the data is dynamically controllable at the logic gate level by the user.

Tape (1) is a material constructed of interlaced or unidirectional monofilaments, strands, rovings, tows, or yarns, etc., usually preimpregnated with resin. N.B.:Strand is a bundle of monofilaments (typically over 200) arranged approximately parallel.

Technology (GTN NTN All) means specific information necessary for the development, production or use of goods. This information takes the form of technical data or technical assistance. N.B. 1:Technical assistance may take forms such as instructions, skills, training, working knowledge and consulting services and may involve the transfer of technical data. N.B. 2:Technical data may take forms such as blueprints, plans, diagrams, models, formulae, tables, engineering designs and specifications, manuals and instructions written or recorded on other media or devices such as disk, tape, read-only memories.

Tilting spindle (2) means a tool-holding spindle which alters, during the machining process, the angular position of its centre line with respect to any other axis.

Time constant (6) is the time taken from the application of a light stimulus for the current increment to reach a value of 1-1/e times the final value (i.e., 63 % of the final value).

Time-modulated ultra-wideband (5) means the technique in which very short precisely time-controlled RF pulses are modulated in accordance with communications data by shifting pulse positions (usually called Pulse Position Modulation, PPM) channelised or scrambled in accordance with pseudo-random noise codes by PPM, then transmitted and received in the direct pulse form without using any carrier frequencies, consequently having extremely low power density over ultra-wide frequency bands. It is also known as Impulse Radio.

Total control of flight ( 7) means an automated control of aircraft state variables and flight path to meet mission objectives responding to real time changes in data regarding objectives, hazards or other aircraft.

Total digital transfer rate (5) means the number of bits, including line coding, overhead and so forth per unit time passing between corresponding equipment in a digital transmission system. N.B.: See also digital transfer rate.

Tow (1) is a bundle of monofilaments, usually approximately parallel.

Toxins (1 2) means toxins in the form of deliberately isolated preparations or mixtures, no matter how produced, other than toxins present as contaminants of other materials such as pathological specimens, crops, foodstuffs or seed stocks of microorganisms.

Transfer laser (6) means a laser in which the lasing species is excited through the transfer of energy by collision of a non-lasing atom or molecule with a lasing atom or molecule species.

Tunable (6) means the ability of a laser to produce a continuous output at all wavelengths over a range of several laser transitions. A line selectable laser produces discrete wavelengths within one laser transition and is not considered tunable.

Uranium enriched in the isotopes 235 or 233 (0) means uranium containing the isotopes 235 or 233, or both, in an amount such that the abundance ratio of the sum of these isotopes to the isotope 238 is more than the ratio of the isotope 235 to the isotope 238 occurring in nature (isotopic ratio 0,72 per cent).

Use (GTN NTN All) means operation, installation (including on-site installation), maintenance (checking), repair, overhaul and refurbishing.

User accessible programmability (6) means the facility allowing a user to insert, modify or replace programmes by means other than:

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A physical change in wiring or interconnections; or

The setting of function controls including entry of parameters.

Vaccine (1) is a medicinal product in a pharmaceutical formulation licensed by, or having marketing or clinical trial authorisation from, the regulatory authorities of either the country of manufacture or of use, which is intended to stimulate a protective immunological response in humans or animals in order to prevent disease in those to whom or to which it is administered.

Vacuum Atomisation (1) means a process to reduce a molten stream of metal to droplets of a diameter of 500 micrometre or less by the rapid evolution of a dissolved gas upon exposure to a vacuum.

Variable geometry airfoils (7) means the use of trailing edge flaps or tabs, or leading edge slats or pivoted nose droop, the position of which can be controlled in flight.

Yarn (1) is a bundle of twisted strands. N.B.:Strand is a bundle of monofilaments (typically over 200) arranged approximately parallel.

ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX

An acronym or abbreviation, when used as a defined term, will be found in Definitions of Terms used in this Annex. Acronym or abbreviation Meaning ABEC Annular Bearing Engineers Committee AGMA American Gear Manufacturers' Association AHRS attitude and heading reference systems AISI American Iron and Steel Institute ALU arithmetic logic unit ANSI American National Standards Institute ASTM the American Society for Testing and Materials ATC air traffic control AVLIS atomic vapour laser isotope separation CAD computer-aided-design CAS Chemical Abstracts Service CCITT International Telegraph and Telephone Consultative Committee CDU control and display unit CEP circular error probable CNTD controlled nucleation thermal deposition CRISLA chemical reaction by isotope selective laser activation CVD chemical vapour deposition CW chemical warfare CW (for lasers) continuous wave DME distance measuring equipment DS directionally solidified EB-PVD electron beam physical vapour deposition EBU European Broadcasting Union ECM electro-chemical machining ECR electron cyclotron resonance EDM electrical discharge machines EEPROMS electrically erasable programmable read only memory EIA Electronic Industries Association EMC electromagnetic compatibility ETSI European Telecommunications Standards Institute FFT Fast Fourier Transform GLONASS global navigation satellite system GPS global positioning system HBT hetero-bipolar transistors HDDR high density digital recording HEMT high electron mobility transistors ICAO International Civil Aviation Organisation IEC International Electro-technical Commission IEEE Institute of Electrical and Electronic Engineers IFOV instantaneous-field-of-view ILS instrument landing system IRIG inter-range instrumentation group ISAR inverse synthetic aperture radar ISO International Organization for Standardization ITU International Telecommunication Union JIS Japanese Industrial Standard JT Joule-Thomson LIDAR light detection and ranging LRU line replaceable unit MAC message authentication code Mach ratio of speed of an object to speed of sound (after Ernst Mach) MLIS molecular laser isotopic separation MLS microwave landing systems MOCVD metal organic chemical vapour deposition MRI magnetic resonance imaging MTBF mean-time-between-failures Mtops million theoretical operations per second MTTF mean-time-to-failure NBC Nuclear, Biological and Chemical NDT non-destructive test PAR precision approach radar PIN personal identification number ppm parts per million PSD power spectral density QAM quadrature-amplitude-modulation RF radio frequency SACMA Suppliers of Advanced Composite Materials Association SAR synthetic aperture radar SC single crystal SLAR sidelooking airborne radar SMPTE Society of Motion Picture and Television Engineers SRA shop replaceable assembly SRAM static random access memory SRM SACMA Recommended Methods SSB single sideband SSR secondary surveillance radar TCSEC trusted computer system evaluation criteria TIR total indicated reading UV ultraviolet UTS ultimate tensile strength VOR very high frequency omni-directional range YAG yttrium/aluminium garnet

CATEGORY 0 NUCLEAR MATERIALS, FACILITIES, AND EQUIPMENT

0ASystems, Equipment and Components

0A001Nuclear reactors and specially designed or prepared equipment and components therefor, as follows:

Nuclear reactors capable of operation so as to maintain a controlled self-sustaining fission chain reaction;

Metal vessels, or major shop-fabricated parts therefor, specially designed or prepared to contain the core of a nuclear reactor, including the reactor vessel head for a reactor pressure vessel;

Manipulative equipment specially designed or prepared for inserting or removing fuel in a nuclear reactor;

Control rods specially designed or prepared for the control of the fission process in a nuclear reactor, support or suspension structures therefor, rod drive mechanisms and rod guide tubes;

Pressure tubes specially designed or prepared to contain fuel elements and the primary coolant in a nuclear reactor at an operating pressure in excess of 5,1 MPa;

Zirconium metal and alloys in the form of tubes or assemblies of tubes in which the ratio of hafnium to zirconium is less than 1:500 parts by weight, specially designed or prepared for use in a nuclear reactor;

Coolant pumps specially designed or prepared for circulating the primary coolant of nuclear reactors;

Nuclear reactor internals specially designed or prepared for use in a nuclear reactor, including support columns for the core, fuel channels, thermal shields, baffles, core grid plates, and diffuser plates; Note: In 0A001.h. nuclear reactor internals means any major structure within a reactor vessel which has one or more functions such as supporting the core, maintaining fuel alignment, directing primary coolant flow, providing radiation shields for the reactor vessel, and guiding in-core instrumentation.

Heat exchangers (steam generators) specially designed or prepared for use in the primary coolant circuit of a nuclear reactor;

Neutron detection and measuring instruments specially designed or prepared for determining neutron flux levels within the core of a nuclear reactor.

0BTest, Inspection and Production Equipment

0B001Plant for the separation of isotopes of natural uranium, depleted uranium and special fissile materials, and specially designed or prepared equipment and components therefor, as follows: 0B002Specially designed or prepared auxiliary systems, equipment and components, as follows, for isotope separation plant specified in 0B001, made of or protected by materials resistant to corrosion by UF6: 0B003Plant for the conversion of uranium and equipment specially designed or prepared therefor, as follows: 0B004Plant for the production or concentration of heavy water, deuterium and deuterium compounds and specially designed or prepared equipment and components therefor, as follows: 0B005Plant specially designed for the fabrication of nuclear reactor fuel elements and specially designed or prepared equipment therefor. Note: A plant for the fabrication of nuclear reactor fuel elements includes equipment which: 0B006Plant for the reprocessing of irradiated nuclear reactor fuel elements, and specially designed or prepared equipment and components therefor. Note: 0B006 includes: 0B007Plant for the conversion of plutonium and equipment specially designed or prepared therefor, as follows:

Plant specially designed for separating isotopes of natural uranium, depleted uranium, and special fissile materials, as follows:

1. Gas centrifuge separation plant;

2. Gaseous diffusion separation plant;

3. Aerodynamic separation plant;

4. Chemical exchange separation plant;

5. Ion-exchange separation plant;

6. Atomic vapour laser isotope separation (AVLIS) plant;

7. Molecular laser isotope separation (MLIS) plant;

8. Plasma separation plant;

9. Electro magnetic separation plant;

Gas centrifuges and assemblies and components, specially designed or prepared for gas centrifuge separation process, as follows: Note: In 0B001.b. high strength-to-density ratio material means any of the following:

a.

Maraging steel capable of an ultimate tensile strength of 2050 MPa or more;

b.

Aluminium alloys capable of an ultimate tensile strength of 460 MPa or more; or

c.

Fibrous or filamentary materials with a specific modulus of more than 3,18 × 106 m and a specific tensile strength greater than 76,2 × 103 m;

1. Gas centrifuges;

2. Complete rotor assemblies;

3. Rotor tube cylinders with a wall thickness of 12 mm or less, a diameter of between 75 mm and 400 mm, made from high strength-to-density ratio materials;

4. Rings or bellows with a wall thickness of 3 mm or less and a diameter of between 75 mm and 400 mm and designed to give local support to a rotor tube or to join a number together, made from high strength-to-density ratio materials;

5. Baffles of between 75 mm and 400 mm diameter for mounting inside a rotor tube, made from high strength-to-density ratio materials;

6. Top or bottom caps of between 75 mm and 400 mm diameter to fit the ends of a rotor tube, made from high strength-to-density ratio materials;

7. Magnetic suspension bearings consisting of an annular magnet suspended within a housing made of or protected by materials resistant to corrosion by UF6 containing a damping medium and having the magnet coupling with a pole piece or second magnet fitted to the top cap of the rotor;

8. Specially prepared bearings comprising a pivot-cup assembly mounted on a damper;

9. Molecular pumps comprised of cylinders having internally machined or extruded helical grooves and internally machined bores;

10. Ring-shaped motor stators for multiphase AC hysteresis (or reluctance) motors for synchronous operation within a vacuum in the frequency range of 600 to 2000 Hz and a power range of 50 to 1000 Volt-Amps;

11. Centrifuge housing/recipients to contain the rotor tube assembly of a gas centrifuge, consisting of a rigid cylinder of wall thickness up to 30 mm with precision machined ends and made of or protected by materials resistant to corrosion by UF6;

12. Scoops consisting of tubes of up to 12 mm internal diameter for the extraction of UF6 gas from within a centrifuge rotor tube by a Pitot tube action, made of or protected by materials resistant to corrosion by UF6;

13. Frequency changers (converters or inverters) specially designed or prepared to supply motor stators for gas centrifuge enrichment, having all of the following characteristics, and specially designed components therefor:

13. a.

Multiphase output of 600 to 2000 Hz;

Frequency control better than 0,1 %;

Harmonic distortion of less than 2 %; and

An efficiency greater than 80 %;

Equipment and components, specially designed or prepared for gaseous diffusion separation process, as follows:

1. Gaseous diffusion barriers made of porous metallic, polymer or ceramic materials resistant to corrosion by UF6 with a pore size of 10 to 100 nm, a thickness of 5 mm or less, and, for tubular forms, a diameter of 25 mm or less;

2. Gaseous diffuser housings made of or protected by materials resistant to corrosion by UF6;

3. Compressors (positive displacement, centrifugal and axial flow types) or gas blowers with a suction volume capacity of 1 m3/min or more of UF6, and discharge pressure up to 666,7 kPa, made of or protected by materials resistant to corrosion by UF6;

4. Rotary shaft seals for compressors or blowers specified in 0B001.c.3. and designed for a buffer gas in-leakage rate of less than 1000 cm3/min.;

5. Heat exchangers made of aluminium, copper, nickel, or alloys containing more than 60 per cent nickel, or combinations of these metals as clad tubes, designed to operate at sub-atmospheric pressure with a leak rate that limits the pressure rise to less than 10 Pa per hour under a pressure differential of 100 kPa;

6. Bellow valves made of or protected by materials resistant to corrosion by UF, with a diameter of 40 mm to 1500 mm;

Equipment and components, specially designed or prepared for aerodynamic separation process, as follows:

1. Separation nozzles consisting of slit-shaped, curved channels having a radius of curvature less than 1 mm, resistant to corrosion by UF6, and having a knife-edge contained within the nozzle which separates the gas flowing through the nozzle into two streams;

2. Tangential inlet flow-driven cylindrical or conical tubes, (vortex tubes), made of or protected by materials resistant to corrosion by UF6 with a diameter of between 0,5 cm and 4 cm and a length to diameter ratio of 20:1 or less and with one or more tangential inlets;

3. Compressors (positive displacement, centrifugal and axial flow types) or gas blowers with a suction volume capacity of 2 m3/min or more, made of or protected by materials resistant to corrosion by UF6, and rotary shaft seals therefor;

4. Heat exchangers made of or protected by materials resistant to corrosion by UF6;

5. Aerodynamic separation element housings, made of or protected by materials resistant to corrosion by UF6 to contain vortex tubes or separation nozzles;

6. Bellows valves made of or protected by materials resistant to corrosion by UF6, with a diameter of 40 mm to 1500 mm;

7. Process systems for separating UF6 from carrier gas (hydrogen or helium) to 1 ppm UF6 content or less, including:

7. a.

Cryogenic heat exchangers and cryoseparators capable of temperatures of 153 K (– 120 °C) or less;

Cryogenic refrigeration units capable of temperatures of 153 K (– 120 °C) or less;

Separation nozzle or vortex tube units for the separation of UF6 from carrier gas;

UF6 cold traps capable of temperatures of 253 K (– 20 °C) or less;

Equipment and components, specially designed or prepared for chemical exchange separation process, as follows:

1. Fast-exchange liquid-liquid pulse columns with stage residence time of 30 seconds or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorocarbon polymers or glass);

2. Fast-exchange liquid-liquid centrifugal contactors with stage residence time of 30 seconds or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorocarbon polymers or glass);

3. Electrochemical reduction cells resistant to concentrated hydrochloric acid solutions, for reduction of uranium from one valence state to another;

4. Electrochemical reduction cells feed equipment to take U+4 from the organic stream and, for those parts in contact with the process stream, made of or protected by suitable materials (e.g. glass, fluorocarbon polymers, polyphenyl sulphate, polyether sulfone and resin-impregnated graphite);

5. Feed preparation systems for producing high purity uranium chloride solution consisting of dissolution, solvent extraction and/or ion exchange equipment for purification and electrolytic cells for reducing the uranium U+6 or U+4 to U+3;

6. Uranium oxidation systems for oxidation of U+3 to U+4;

Equipment and components, specially designed or prepared for ion-exchange separation process, as follows:

1. Fast reacting ion-exchange resins, pellicular or porous macro-reticulated resins in which the active chemical exchange groups are limited to a coating on the surface of an inactive porous support structure, and other composite structures in any suitable form, including particles or fibres, with diameters of 0,2 mm or less, resistant to concentrated hydrochloric acid and designed to have an exchange rate half-time of less than 10 seconds and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C);

2. Ion exchange columns (cylindrical) with a diameter greater than 1000 mm, made of or protected by materials resistant to concentrated hydrochloric acid (e.g. titanium or fluorocarbon plastics) and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C) and pressures above 0,7 MPa;

3. Ion exchange reflux systems (chemical or electrochemical oxidation or reduction systems) for regeneration of the chemical reducing or oxidizing agents used in ion exchange enrichment cascades;

Equipment and components, specially designed or prepared for atomic vapour laser isotope separation process (AVLIS), as follows:

1. High power strip or scanning electron beam guns with a delivered power of more than 2,5 kW/cm for use in uranium vaporization systems;

2. Liquid uranium metal handling systems for molten uranium or uranium alloys, consisting of crucibles, made of or protected by suitable corrosion and heat resistant materials (e.g. tantalum, yttria-coated graphite, graphite coated with other rare earth oxides or mixtures thereof), and cooling equipment for the crucibles; N.B.: SEE ALSO 2A225.

3. Product and tails collector systems made of or lined with materials resistant to the heat and corrosion of uranium metal vapour or liquid, such as yttria-coated graphite or tantalum;

4. Separator module housings (cylindrical or rectangular vessels) for containing the uranium metal vapour source, the electron beam gun and the product and tails collectors;

5. Lasers or laser systems for the separation of uranium isotopes with a spectrum frequency stabiliser for operation over extended periods of time; N.B.: SEE ALSO 6A005 AND 6A205.

Equipment and components, specially designed or prepared for molecular laser isotope separation process (MLIS) or chemical reaction by isotope selective laser activation (CRISLA), as follows:

1. Supersonic expansion nozzles for cooling mixtures of UF6 and carrier gas to 150 K (– 123 °C) or less and made from materials resistant to corrosion by UF6;

2. Uranium pentafluoride (UF5) product collectors consisting of filter, impact, or cyclone-type collectors or combinations thereof, and made of materials resistant to corrosion by UF5/UF6;

3. Compressors made of or protected by materials resistant to corrosion by UF6, and rotary shaft seals therefor;

4. Equipment for fluorinating UF5 (solid) to UF6 (gas);

5. Process systems for separating UF6 from carrier gas (e.g. nitrogen or argon) including:

5. a.

Cryogenic heat exchangers and cryoseparators capable of temperatures of 153 K (– 120 °C) or less;

Cryogenic refrigeration units capable of temperatures of 153 K (– 120 °C) or less;

UF6 cold traps capable of temperatures of 253 K (– 20 °C) or less;

6. Lasers or laser systems for the separation of uranium isotopes with a spectrum frequency stabiliser for operation over extended periods of time; N.B.: SEE ALSO 6A005 AND 6A205.

Equipment and components, specially designed or prepared for plasma separation process, as follows:

1. Microwave power sources and antennae for producing or accelerating ions, with an output frequency greater than 30 GHz and mean power output greater than 50 kW;

2. Radio frequency ion excitation coils for frequencies of more than 100 kHz and capable of handling more than 40 kW mean power;

3. Uranium plasma generation systems;

4. Liquid metal handling systems for molten uranium or uranium alloys, consisting of crucibles, made of or protected by suitable corrosion and heat resistant materials (e.g. tantalum, yttria-coated graphite, graphite coated with other rare earth oxides or mixtures thereof), and cooling equipment for the crucibles; N.B.: SEE ALSO 2A225.

5. Product and tails collectors made of or protected by materials resistant to the heat and corrosion of uranium vapour such as yttria-coated graphite or tantalum;

6. Separator module housings (cylindrical) for containing the uranium plasma source, radio-frequency drive coil and the product and tails collectors and made of a suitable non-magnetic material (e.g. stainless steel);

Equipment and components, specially designed or prepared for electromagnetic separation process, as follows:

1. Ion sources, single or multiple, consisting of a vapour source, ioniser, and beam accelerator made of suitable non-magnetic materials (e.g. graphite, stainless steel, or copper) and capable of providing a total ion beam current of 50 mA or greater;

2. Ion collector plates for collection of enriched or depleted uranium ion beams, consisting of two or more slits and pockets and made of suitable non-magnetic materials (e.g. graphite or stainless steel);

3. Vacuum housings for uranium electromagnetic separators made of non-magnetic materials (e.g. stainless steel) and designed to operate at pressures of 0,1 Pa or lower;

4. Magnet pole pieces with a diameter greater than 2 m;

5. High voltage power supplies for ion sources, having all of the following characteristics: N.B.: SEE ALSO 3A227.

5. a.

Capable of continuous operation;

Output voltage of 20000 V or greater;

Output current of 1 A or greater; and

Voltage regulation of better than 0,01 % over a period of 8 hours;

6. Magnet power supplies (high power, direct current) having all of the following characteristics: N.B.: SEE ALSO 3A226.

6. a.

Capable of continuous operation with a current output of 500 A or greater at a voltage of 100 V or greater; and

Current or voltage regulation better than 0,01 % over a period of 8 hours.

Feed autoclaves, ovens or systems used for passing UF6 to the enrichment process;

Desublimers or cold traps, used to remove UF6 from the enrichment process for subsequent transfer upon heating;

Product and tails stations for transferring UF6 into containers;

Liquefaction or solidification stations used to remove UF6 from the enrichment process by compressing, cooling and converting UF6 to a liquid or solid form;

Piping systems and header systems specially designed for handling UF6 within gaseous diffusion, centrifuge or aerodynamic cascades;

1. Vacuum manifolds or vacuum headers having a suction capacity of 5 m3/minute or more; or

2. Vacuum pumps specially designed for use in UF6 bearing atmospheres;

UF6 mass spectrometers/ion sources specially designed or prepared for taking on-line samples of feed, product or tails from UF6 gas streams and having all of the following characteristics:

1. Unit resolution for mass of more than 320 amu;

2. Ion sources constructed of or lined with nichrome or monel, or nickel plated;

3. Electron bombardment ionisation sources; and

4. Collector system suitable for isotopic analysis.

Systems for the conversion of uranium ore concentrates to UO3;

Systems for the conversion of UO3 to UF6;

Systems for the conversion of UO3 to UO2;

Systems for the conversion of UO2 to UF4;

Systems for the conversion of UF4 to UF6;

Systems for the conversion of UF4 to uranium metal;

Systems for the conversion of UF6 to UO2;

Systems for the conversion of UF6 to UF4;

Systems for the conversion of UO2 to UCl4.

Plant for the production of heavy water, deuterium or deuterium compounds, as follows:

1. Water-hydrogen sulphide exchange plants;

2. Ammonia-hydrogen exchange plants;

Equipment and components, as follows:

1. Water-hydrogen sulphide exchange towers fabricated from fine carbon steel (e.g. ASTM A516) with diameters of 6 m to 9 m, capable of operating at pressures greater than or equal to 2 MPa and with a corrosion allowance of 6 mm or greater;

2. Single stage, low head (i.e. 0,2 MPa) centrifugal blowers or compressors for hydrogen sulphide gas circulation (i.e. gas containing more than 70 % H2S) with a throughput capacity greater than or equal to 56 m3/second when operating at pressures greater than or equal to 1,8 MPa suction and having seals designed for wet H2S service;

3. Ammonia-hydrogen exchange towers greater than or equal to 35 m in height with diameters of 1,5 m to 2,5 m capable of operating at pressures greater than 15 MPa;

4. Tower internals, including stage contactors, and stage pumps, including those which are submersible, for heavy water production utilizing the ammonia-hydrogen exchange process;

5. Ammonia crackers with operating pressures greater than or equal to 3 MPa for heavy water production utilizing the ammonia-hydrogen exchange process;

6. Infrared absorption analysers capable of on-line hydrogen/deuterium ratio analysis where deuterium concentrations are equal to or greater than 90 %;

7. Catalytic burners for the conversion of enriched deuterium gas into heavy water utilizing the ammonia-hydrogen exchange process;

8. Complete heavy water upgrade systems, or columns therefor, for the upgrade of heavy water to reactor-grade deuterium concentration.

Normally comes into direct contact with or directly processes or controls the production flow of nuclear materials;

Seals the nuclear materials within the cladding;

Checks the integrity of the cladding or the seal; or

Checks the finish treatment of the sealed fuel.

Plant for the reprocessing of irradiated nuclear reactor fuel elements including equipment and components which normally come into direct contact with and directly control the irradiated fuel and the major nuclear material and fission product processing streams;

Fuel element chopping or shredding machines, i.e. remotely operated equipment to cut, chop, shred or shear irradiated nuclear reactor fuel assemblies, bundles or rods;

Dissolvers, critically safe tanks (e.g. small diameter, annular or slab tanks) specially designed or prepared for the dissolution of irradiated nuclear reactor fuel, which are capable of withstanding hot, highly corrosive liquids, and which can be remotely loaded and maintained;

Counter-current solvent extractors and ion-exchange processing equipment specially designed or prepared for use in a plant for the reprocessing of irradiated natural uranium, depleted uranium or special fissile materials;

Holding or storage vessels specially designed to be critically safe and resistant to the corrosive effects of nitric acid; Note: Holding or storage vessels may have the following features:

1. Walls or internal structures with a boron equivalent (calculated for all constituent elements as defined in the note to 0C004) of at least two per cent;

2. A maximum diameter of 175 mm for cylindrical vessels; or

3. A maximum width of 75 mm for either a slab or annular vessel.

Process control instrumentation specially designed or prepared for monitoring or controlling the reprocessing of irradiated natural uranium, depleted uranium or special fissile materials.

Systems for the conversion of plutonium nitrate to oxide;

Systems for plutonium metal production.

0CMaterials 0C001Natural uranium or depleted uranium or thorium in the form of metal, alloy, chemical compound or concentrate and any other material containing one or more of the foregoing; Note: 0C001 does not control the following: 0C002Special fissile materials Note: 0C002 does not control four effective grammes or less when contained in a sensing component in instruments. 0C003Deuterium, heavy water (deuterium oxide) and other compounds of deuterium, and mixtures and solutions containing deuterium, in which the isotopic ratio of deuterium to hydrogen exceeds 1:5000. 0C004Graphite, nuclear grade, having a purity level of less than 5 parts per million boron equivalent and with a density greater than 1,5 g/cm3. N.B.: SEE ALSO 1C107. Note 1: 0C004 does not control the following: Note 2: In 0C004, boron equivalent (BE) is defined as the sum of BEz for impurities (excluding BEcarbon since carbon is not considered an impurity) including boron, where: BEz (ppm) = CF × concentration of element Z in ppm; where CF is the conversion factor = σZABσBAZ and σB and σZ are the thermal neutron capture cross sections (in barns) for naturally occurring boron and element Z respectively; and AB and AZ are the atomic masses of naturally occurring boron and element Z respectively. 0C005Specially prepared compounds or powders for the manufacture of gaseous diffusion barriers, resistant to corrosion by UF6 (e.g. nickel or alloy containing 60 weight per cent or more nickel, aluminium oxide and fully fluorinated hydrocarbon polymers), having a purity of 99,9 weight per cent or more and a mean particle size of less than 10 micrometres measured by American Society for Testing and Materials (ASTM) B330 standard and a high degree of particle size uniformity.

0CMaterials a.

Four grammes or less of natural uranium or depleted uranium when contained in a sensing component in instruments;

Depleted uranium specially fabricated for the following civil non-nuclear applications:

1. Shielding;

2. Packaging;

3. Ballasts having a mass not greater than 100 kg;

4. Counter-weights having a mass not greater than 100 kg;

Alloys containing less than 5 % thorium;

Ceramic products containing thorium, which have been manufactured for non-nuclear use.

Manufactures of graphite having a mass less than 1 kg, other than those specially designed or prepared for use in a nuclear reactor;

Graphite powder.

0DSoftware 0D001Software specially designed or modified for the development, production or use of goods specified in this Category.

0ETechnology 0E001Technology according to the Nuclear Technology Note for the development, production or use of goods specified in this Category.

CATEGORY 1 MATERIALS, CHEMICALS, MICROORGANISMS & TOXINS

1ASystems, Equipment and Components Technical Note:

1A001Components made from fluorinated compounds, as follows: 1A002Composite structures or laminates, having any of the following: N.B.: SEE ALSO 1A202, 9A010 and 9A110 Note 1: 1A002 does not control composite structures or laminates made from epoxy resin impregnated carbon fibrous or filamentary materials for the repair of aircraft structures or laminates, provided the size does not exceed 1 m2. Note 2: 1A002 does not control finished or semi-finished items specially designed for purely civilian applications as follows: 1A003Manufactures of non-fluorinated polymeric substances specified in 1C008.a.3. in film, sheet, tape or ribbon form with either of the following characteristics: Note: 1A003 does not control manufactures when coated or laminated with copper and designed for the production of electronic printed circuit boards. 1A004Protective and detection equipment and components, other than those specified in military goods controls, as follows: N.B.: SEE ALSO 2B351 AND 2B352. Note: 1A004 does not control: 1A005Body armour, and specially designed components therefor, other than those manufactured to military standards or specifications or to their equivalents in performance. N.B.: SEE ALSO MILITARY GOODS CONTROLS. N.B.: For fibrous or filamentary materials used in the manufacture of body armour, see 1C010. Note 1: 1A005 does not control body armour or protective garments when accompanying their user for the user's own personal protection. Note 2: 1A005 does not control body armour designed to provide frontal protection only from both fragment and blast from non-military explosive devices. 1A102Resaturated pyrolized carbon-carbon components designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. 1A202Composite structures, other than those specified in 1A002, in the form of tubes and having both of the following characteristics: N.B.: SEE ALSO 9A010 AND 9A110. 1A225Platinized catalysts specially designed or prepared for promoting the hydrogen isotope exchange reaction between hydrogen and water for the recovery of tritium from heavy water or for the production of heavy water. 1A226Specialized packings which may be used in separating heavy water from ordinary water, having both of the following characteristics: 1A227High-density (lead glass or other) radiation shielding windows, having all of the following characteristics, and specially designed frames therefor: In 1A227 the term cold area means the viewing area of the window exposed to the lowest level of radiation in the design application.

1ASystems, Equipment and Components a.

Seals, gaskets, sealants or fuel bladders specially designed for aircraft or aerospace use made from more than 50 % by weight of any of the materials specified in 1C009.b. or 1C009.c.;

Piezoelectric polymers and copolymers made from vinylidene fluoride materials specified in 1C009.a.:

1. In sheet or film form; and

2. With a thickness exceeding 200 μm;

Seals, gaskets, valve seats, bladders or diaphragms made from fluoroelastomers containing at least one vinylether group as a constitutional unit, specially designed for aircraft, aerospace or missile use. Note: In 1A001.c., missile means complete rocket systems and unmanned air vehicle systems.

An organic matrix and made from materials specified in 1C010.c., 1C010.d. or 1C010.e.; or

A metal or carbon matrix and made from:

1. Carbon fibrous or filamentary materials with:

1. a.

A specific modulus exceeding 10,15 × 106 m; and

A specific tensile strength exceeding 17,7 × 104 m; or

2. Materials specified in 1C010.c.

Sporting goods;

Automotive industry;

Machine tool industry;

Medical applications.

With a thickness exceeding 0,254 mm; or

Coated or laminated with carbon, graphite, metals or magnetic substances.

Gas masks, filter canisters and decontamination equipment therefor designed or modified for defence against biological agents or radioactive materials adapted for use in war or chemical warfare (CW) agents and specially designed components therefor;

Protective suits, gloves and shoes specially designed or modified for defence against biological agents or radioactive materials adapted for use in war or chemical warfare (CW) agents;

Nuclear, biological and chemical (NBC) detection systems specially designed or modified for detection or identification of biological agents or radioactive materials adapted for use in war or chemical warfare (CW) agents and specially designed components therefor.

Personal radiation monitoring dosimeters;

Equipment limited by design or function to protect against hazards specific to civil industries, such as mining, quarrying, agriculture, pharmaceuticals, medical, veterinary, environmental, waste management, or to the food industry.

An inside diameter of between 75 mm and 400 mm; and

Made with any of the fibrous or filamentary materials specified in 1C010.a. or b. or 1C210.a. or with carbon prepreg materials specified in 1C210.c.

Made of phosphor bronze mesh chemically treated to improve wettability; and

Designed to be used in vacuum distillation towers.

A cold area greater than 0,09 m2;

A density greater than 3 g/cm3; and

A thickness of 100 mm or greater.

1BTest, Inspection and Production Equipment

1B001Equipment for the production of fibres, prepregs, preforms or composites specified in 1A002 or 1C010, as follows, and specially designed components and accessories therefor: N.B.: SEE ALSO 1B101 AND 1B201. 1B002Equipment for producing metal alloys, metal alloy powder or alloyed materials, specially designed to avoid contamination and specially designed for use in one of the processes specified in 1C002.c.2. N.B.: SEE ALSO 1B102. 1B003Tools, dies, moulds or fixtures, for superplastic forming or diffusion bonding titanium or aluminium or their alloys, specially designed for the manufacture of: 1B101Equipment, other than that specified in 1B001, for the production of structural composites as follows; and specially designed components and accessories therefor: N.B.: SEE ALSO 1B201. Note: Components and accessories specified in 1B101 include moulds, mandrels, dies, fixtures and tooling for the preform pressing, curing, casting, sintering or bonding of composite structures, laminates and manufactures thereof. 1B102Metal powder production equipment, other than that specified in 1B002, and components as follows: N.B.: SEE ALSO 1B115.b. Note: 1B102 includes: 1B115Equipment, other than that specified in 1B002 or 1B102, for the production of propellant and propellant constituents, as follows, and specially designed components therefor: Note 1: For equipment specially designed for the production of military goods, see the Military Goods Controls. Note 2: 1B115 does not control equipment for the production, handling and acceptance testing of boron carbide. 1B116Specially designed nozzles for producing pyrolitically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. 1B117Batch mixers with provision for mixing under vacuum in the range of zero to 13,326 kPa and with temperature control capability of the mixing chamber and having all of the following, and specially designed components therefor: 1B118Continuous mixers with provision for mixing under vacuum in the range of zero to 13,326 kPa and with a temperature control capability of the mixing chamber having any of the following, and specially designed components therefor: 1B119Fluid energy mills usable for grinding or milling substances specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls, and specially designed components therefor. 1B201Filament winding machines, other than those specified in 1B001 or 1B101, and related equipment, as follows: 1B225Electrolytic cells for fluorine production with an output capacity greater than 250 g of fluorine per hour. 1B226Electromagnetic isotope separators designed for, or equipped with, single or multiple ion sources capable of providing a total ion beam current of 50 mA or greater. Note: 1B226 includes separators: 1B227Ammonia synthesis converters or ammonia synthesis units, in which the synthesis gas (nitrogen and hydrogen) is withdrawn from an ammonia/hydrogen high-pressure exchange column and the synthesized ammonia is returned to said column. 1B228Hydrogen-cryogenic distillation columns having all of the following characteristics: 1B229Water-hydrogen sulphide exchange tray columns and internal contactors, as follows: N.B.: For columns which are specially designed or prepared for the production of heavy water see 0B004. 1B230Pumps capable of circulating solutions of concentrated or dilute potassium amide catalyst in liquid ammonia (KNH2/NH3), having all of the following characteristics: 1B231Tritium facilities or plants, and equipment therefor, as follows: 1B232Turboexpanders or turboexpander-compressor sets having both of the following characteristics: 1B233Lithium isotope separation facilities or plants, and equipment therefor, as follows:

Filament winding machines of which the motions for positioning, wrapping and winding fibres are coordinated and programmed in three or more axes, specially designed for the manufacture of composite structures or laminates from fibrous or filamentary materials;

Tape-laying or tow-placement machines of which the motions for positioning and laying tape, tows or sheets are coordinated and programmed in two or more axes, specially designed for the manufacture of composite airframe or missile structures; Note: In 1B001.b., missile means complete rocket systems and unmanned air vehicle systems.

c. Technical Note:

Multidirectional, multidimensional weaving machines or interlacing machines, including adapters and modification kits, for weaving, interlacing or braiding fibres to manufacture composite structures; For the purposes of 1B001.c. the technique of interlacing includes knitting. Note: 1B001.c. does not control textile machinery not modified for the above end-uses.

Equipment specially designed or adapted for the production of reinforcement fibres, as follows:

1. Equipment for converting polymeric fibres (such as polyacrylonitrile, rayon, pitch or polycarbosilane) into carbon fibres or silicon carbide fibres, including special equipment to strain the fibre during heating;

2. Equipment for the chemical vapour deposition of elements or compounds on heated filamentary substrates to manufacture silicon carbide fibres;

3. Equipment for the wet-spinning of refractory ceramics (such as aluminium oxide);

4. Equipment for converting aluminium containing precursor fibres into alumina fibres by heat treatment;

Equipment for producing prepregs specified in 1C010.e. by the hot melt method;

Non-destructive inspection equipment capable of inspecting defects three dimensionally, using ultrasonic or X-ray tomography and specially designed for composite materials.

Airframe or aerospace structures;

Aircraft or aerospace engines; or

Specially designed components for those structures or engines.

Filament winding machines of which the motions for positioning, wrapping and winding fibres can be coordinated and programmed in three or more axes, designed to fabricate composite structures or laminates from fibrous or filamentary materials, and coordinating and programming controls;

Tape-laying machines of which the motions for positioning and laying tape and sheets can be coordinated and programmed in two or more axes, designed for the manufacture of composite airframe and missile structures;

Equipment designed or modified for the production of fibrous or filamentary materials as follows:

1. Equipment for converting polymeric fibres (such as polyacrylonitrile, rayon or polycarbosilane) including special provision to strain the fibre during heating;

2. Equipment for the vapour deposition of elements or compounds on heated filament substrates;

3. Equipment for the wet-spinning of refractory ceramics (such as aluminium oxide);

Equipment designed or modified for special fibre surface treatment or for producing prepregs and preforms specified in entry 9C110. Note: 1B101.d. includes rollers, tension stretchers, coating equipment, cutting equipment and clicker dies.

Metal powder production equipment usable for the production, in a controlled environment, of spherical or atomised materials specified in 1C011.a., 1C011.b., 1C111.a.1., 1C111.a.2. or in the Military Goods Controls.

Specially designed components for production equipment specified in 1B002 or 1B102.a.

Plasma generators (high frequency arc-jet) usable for obtaining sputtered or spherical metallic powders with organization of the process in an argon-water environment;

Electroburst equipment usable for obtaining sputtered or spherical metallic powders with organization of the process in an argon-water environment;

Equipment usable for the production of spherical aluminium powders by powdering a melt in an inert medium (e.g. nitrogen).

Production equipment for the production, handling or acceptance testing of liquid propellants or propellant constituents specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls;

Production equipment for the production, handling, mixing, curing, casting, pressing, machining, extruding or acceptance testing of solid propellants or propellant constituents specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls. Note: 1B115.b. does not control batch mixers, continuous mixers or fluid energy mills. For the control of batch mixers, continuous mixers and fluid energy mills see 1B117, 1B118 and 1B119.

A total volumetric capacity of 110 litres or more; and

At least one mixing/kneading shaft mounted off centre.

Two or more mixing/kneading shafts; or

A single rotating shaft which oscillates and having kneading teeth/pins on the shaft as well as inside the casing of the mixing chamber.

Filament winding machines having all of the following characteristics:

1. Having motions for positioning, wrapping, and winding fibres coordinated and programmed in two or more axes;

2. Specially designed to fabricate composite structures or laminates from fibrous or filamentary materials; and

3. Capable of winding cylindrical rotors of diameter between 75 and 400 mm and lengths of 600 mm or greater;

Coordinating and programming controls for the filament winding machines specified in 1B201.a.;

Precision mandrels for the filament winding machines specified in 1B201.a.

Capable of enriching stable isotopes;

With the ion sources and collectors both in the magnetic field and those configurations in which they are external to the field.

Designed for operation with internal temperatures of 35 K (– 238 °C) or less;

Designed for operation at an internal pressure of 0,5 to 5 MPa;

Constructed of either:

1. Stainless steel of the 300 series with low sulphur content and with an austenitic ASTM (or equivalent standard) grain size number of 5 or greater; or

2. Equivalent materials which are both cryogenic and H2-compatible; and

With internal diameters of 1 m or greater and effective lengths of 5 m or greater.

Water-hydrogen sulphide exchange tray columns, having all of the following characteristics:

1. Can operate at pressures of 2 MPa or greater;

2. Constructed of carbon steel having an austenitic ASTM (or equivalent standard) grain size number of 5 or greater; and

3. With a diameter of 1,8 m or greater;

b. Technical Note:

Internal contactors for the water-hydrogen sulphide exchange tray columns specified in 1B229.a. Internal contactors of the columns are segmented trays which have an effective assembled diameter of 1,8 m or greater, are designed to facilitate countercurrent contacting and are constructed of stainless steels with a carbon content of 0,03 % or less. These may be sieve trays, valve trays, bubble cap trays, or turbogrid trays.

Airtight (i.e., hermetically sealed);

A capacity greater than 8,5 m3/h; and

Either of the following characteristics:

1. For concentrated potassium amide solutions (1 % or greater), an operating pressure of 1,5 to 60 MPa; or

2. For dilute potassium amide solutions (less than 1 %), an operating pressure of 20 to 60 MPa.

Facilities or plants for the production, recovery, extraction, concentration, or handling of tritium;

Equipment for tritium facilities or plants, as follows:

1. Hydrogen or helium refrigeration units capable of cooling to 23 K (– 250 °C) or less, with heat removal capacity greater than 150 W;

2. Hydrogen isotope storage or purification systems using metal hydrides as the storage or purification medium.

Designed for operation with an outlet temperature of 35 K (– 238 °C) or less; and

Designed for a throughput of hydrogen gas of 1000 kg/h or greater.

Facilities or plants for the separation of lithium isotopes;

Equipment for the separation of lithium isotopes, as follows:

1. Packed liquid-liquid exchange columns specially designed for lithium amalgams;

2. Mercury or lithium amalgam pumps;

3. Lithium amalgam electrolysis cells;

4. Evaporators for concentrated lithium hydroxide solution.

1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note:

Metals and alloys: Crude forms: Semi-fabricated forms (whether or not coated, plated, drilled or punched): The object of the control should not be defeated by the export of non-listed forms alleged to be finished products but representing in reality crude forms or semi-fabricated forms. 1C001Materials specially designed for use as absorbers of electromagnetic waves, or intrinsically conductive polymers, as follows: N.B.: SEE ALSO 1C101. 1C002Metal alloys, metal alloy powder and alloyed materials, as follows: N.B.: SEE ALSO 1C202. Note: 1C002 does not control metal alloys, metal alloy powder and alloyed materials for coating substrates. 1C003Magnetic metals, of all types and of whatever form, having any of the following characteristics: 1C004Uranium titanium alloys or tungsten alloys with a matrix based on iron, nickel or copper, having all of the following: 1C005Superconductivecomposite conductors in lengths exceeding 100 m or with a mass exceeding 100 g, as follows: 1C006Fluids and lubricating materials, as follows: For the purpose of 1C006: 1C007Ceramic base materials, non-composite ceramic materials, ceramic-matrixcomposite materials and precursor materials, as follows: N.B.: SEE ALSO 1C107. 1C008Non-fluorinated polymeric substances, as follows: The glass transition temperature (Tg) for 1C008 materials is determined using the method described in ASTM D 3418 using the dry method. 1C009Unprocessed fluorinated compounds, as follows: 1C010Fibrous or filamentary materials which may be used in organic matrix, metallic matrix or carbon matrixcomposite structures or laminates, as follows: N.B.: SEE ALSO 1C210. 1C011Metals and compounds, as follows: N.B.: SEE ALSO MILITARY GOODS CONTROLS and 1C111. 1C012Materials as follows: These materials are typically used for nuclear heat sources. 1C101Materials and devices for reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures, other than those specified in 1C001, usable in missiles and their subsystems. Note 1: 1C101 includes: Note 2: 1C101 does not include coatings when specially used for the thermal control of satellites. 1C102Resaturated pyrolized carbon-carbon materials designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. 1C107Graphite and ceramic materials, other than those specified in 1C007, as follows: 1C111Propellants and constituent chemicals for propellants, other than those specified in 1C011, as follows: Note: For propellants and constituent chemicals for propellants not specified in 1C111, see the Military Goods Controls. 1C116Maraging steels (steels generally characterised by high nickel, very low carbon content and the use of substitutional elements or precipitates to produce age-hardening) having an ultimate tensile strength of 1,500 MPa or greater, measured at 293 K (20 °C), in the form of sheet, plate or tubing with a wall or plate thickness equal to or less than 5 mm. N.B.: SEE ALSO 1C216. 1C117Tungsten, molybdenum and alloys of these metals in the form of uniform spherical or atomized particles of 500 micrometre diameter or less with a purity of 97 % or greater for fabrication of missile motor components, i.e., heat shields, nozzle substrates, nozzle throats and thrust vector control surfaces. 1C118Titanium-stabilised duplex stainless steel (Ti-DSS) having all of the following: 1C202Alloys, other than those specified in 1C002.b.3. or .b.4., as follows: The phrase alloys capable of encompasses alloys before or after heat treatment. 1C210Fibrous or filamentary materials or prepregs, other than those specified in 1C010.a., b. or e., as follows: Note: In 1C210, fibrous or filamentary materials is restricted to continuous monofilaments, yarns, rovings, tows or tapes. 1C216Maraging steel, other than that specified in 1C116, capable of an ultimate tensile strength of 2050 MPa or more, at 293 K (20 °C). Note: 1C216 does not control forms in which all linear dimensions are 75 mm or less. The phrase maraging steel capable of encompasses maraging steel before or after heat treatment. 1C225Boron enriched in the boron-10 (10B) isotope to greater than its natural isotopic abundance, as follows: elemental boron, compounds, mixtures containing boron, manufactures thereof, waste or scrap of any of the foregoing. Note: In 1C225 mixtures containing boron include boron loaded materials. The natural isotopic abundance of boron-10 is approximately 18,5 weight per cent (20 atom per cent). 1C226Tungsten, tungsten carbide, and alloys containing more than 90 % tungsten by weight, having both of the following characteristics: Note: 1C226 does not control manufactures specially designed as weights or gamma-ray collimators. 1C227Calcium having both of the following characteristics: 1C228Magnesium having both of the following characteristics: 1C229Bismuth having both of the following characteristics: 1C230Beryllium metal, alloys containing more than 50 % beryllium by weight, beryllium compounds, manufactures thereof, and waste or scrap of any of the foregoing. Note: 1C230 does not control the following: 1C231Hafnium metal, alloys containing more than 60 % hafnium by weight, hafnium compounds containing more than 60 % hafnium by weight, manufactures thereof, and waste or scrap of any of the foregoing. 1C232Helium-3 (3He), mixtures containing helium-3, and products or devices containing any of the foregoing. Note: 1C232 does not control a product or device containing less than 1 g of helium-3. 1C233Lithium enriched in the lithium-6 (6Li) isotope to greater than its natural isotopic abundance, and products or devices containing enriched lithium, as follows: elemental lithium, alloys, compounds, mixtures containing lithium, manufactures thereof, waste or scrap of any of the foregoing. Note: 1C233 does not control thermoluminescent dosimeters. The natural isotopic abundance of lithium-6 is approximately 6,5 weight per cent (7,5 atom per cent). 1C234Zirconium with a hafnium content of less than 1 part hafnium to 500 parts zirconium by weight, as follows: metal, alloys containing more than 50 % zirconium by weight, compounds, manufactures thereof, waste or scrap of any of the foregoing. Note: 1C234 does not control zirconium in the form of foil having a thickness of 0,10 mm or less. 1C235Tritium, tritium compounds, mixtures containing tritium in which the ratio of tritium to hydrogen atoms exceeds 1 part in 1000, and products or devices containing any of the foregoing. Note: 1C235 does not control a product or device containing less than 1,48 × 103 GBq (40 Ci) of tritium. 1C236Alpha-emitting radionuclides having an alpha half-life of 10 days or greater but less than 200 years, in the following forms: Note: 1C236 does not control a product or device containing less than 3,7 GBq (100 millicuries) of alpha activity. 1C237Radium-226 (226Ra), radium-226 alloys, radium-226 compounds, mixtures containing radium-226, manufactures thereof, and products or devices containing any of the foregoing. Note: 1C237 does not control the following: 1C238Chlorine trifluoride (ClF3). 1C239High explosives, other than those specified in the Military Goods Controls, or substances or mixtures containing more than 2 % by weight thereof, with a crystal density greater than 1,8 g/cm3 and having a detonation velocity greater than 8000 m/s. 1C240Nickel powder and porous nickel metal, other than those specified in 0C005, as follows: Note: 1C240 does not control the following: 1C240.b. refers to porous metal formed by compacting and sintering the materials in 1C240.a. to form a metal material with fine pores interconnected throughout the structure. 1C350Chemicals, which may be used as precursors for toxic chemical agents, as follows, and chemical mixtures containing one or more thereof: N.B.: SEE ALSO MILITARY GOODS CONTROLS AND 1C450. Note 1: For exports to States not Party to the Chemical Weapons Convention, 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350.1, .3, .5, .11, .12, .13, .17, .18, .21, .22, .26, .27, .28, .31, .32, .33, .34, .35, .36 and .54 in which no individually specified chemical constitutes more than 10 % by the weight of the mixture. Note 2: For exports to States Party to the Chemical Weapons Convention, 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350.1, .3, .5, .11, .12, .13, .17, .18, .21, .22, .26, .27, .28, .31, .32, .33, .34, .35, .36 and .54 in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. Note 3: 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350 .2, .6, .7, .8, .9, .10, .14, .15, .16, .19, .20, .24, .25, .30, .37, .38, .39, .40, .41, .42, .43, .44, .45, .46, .47, .48, .49, .50, .51, .52 and .53 in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. Note 4: 1C350 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use. 1C351Human pathogens, zoonoses and toxins, as follows: Note: 1C351 does not control vaccines or immunotoxins. 1C352Animal pathogens, as follows: Note: 1C352 does not control vaccines. 1C353Genetic elements and genetically modified organisms, as follows: Genetic elements include, inter alia, chromosomes, genomes, plasmids, transposons and vectors whether genetically modified or unmodified. Note: 1C353 does not apply to nucleic acid sequences associated with the pathogenicity of enterohaemorrhagic Escherichia coli, serotype O157 and other verotoxin producing strains, other than those coding for the verotoxin, or for its sub-units. 1C354Plant pathogens, as follows: 1C450Toxic chemicals and toxic chemical precursors, as follows, and chemical mixtures containing one or more thereof: N.B.: SEE ALSO ENTRY 1C350, 1C351.d. AND MILITARY GOODS CONTROLS. Note: 1C450 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use.

Unless provision to the contrary is made, the words metals and alloys in 1C001 to 1C012 cover crude and semi-fabricated forms, as follows:

Anodes, balls, bars (including notched bars and wire bars), billets, blocks, blooms, brickets, cakes, cathodes, crystals, cubes, dice, grains, granules, ingots, lumps, pellets, pigs, powder, rondelles, shot, slabs, slugs, sponge, sticks;

1CMaterials Technical Note: a.

Wrought or worked materials fabricated by rolling, drawing, extruding, forging, impact extruding, pressing, graining, atomising, and grinding, i.e.: angles, channels, circles, discs, dust, flakes, foils and leaf, forging, plate, powder, pressings and stampings, ribbons, rings, rods (including bare welding rods, wire rods, and rolled wire), sections, shapes, sheets, strip, pipe and tubes (including tube rounds, squares, and hollows), drawn or extruded wire;

Cast material produced by casting in sand, die, metal, plaster or other types of moulds, including high pressure castings, sintered forms, and forms made by powder metallurgy.

Materials for absorbing frequencies exceeding 2 × 108 Hz but less than 3 × 1012 Hz; Note 1: 1C001.a. does not control: Note 2: Nothing in Note 1 to 1C001.a. releases magnetic materials to provide absorption when contained in paint.

a.

Hair type absorbers, constructed of natural or synthetic fibres, with non-magnetic loading to provide absorption;

b.

Absorbers having no magnetic loss and whose incident surface is non-planar in shape, including pyramids, cones, wedges and convoluted surfaces;

c.

Planar absorbers, having all of the following characteristics:

1. Technical Note:

Made from any of the following: Absorption test samples for 1C001.a. Note: 1.c.1. should be a square at least 5 wavelengths of the centre frequency on a side and positioned in the far field of the radiating element.

1. a.

Plastic foam materials (flexible or non-flexible) with carbon-loading, or organic materials, including binders, providing more than 5 % echo compared with metal over a bandwidth exceeding ±15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 450 K (177 °C); or

Ceramic materials providing more than 20 % echo compared with metal over a bandwidth exceeding ±15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 800 K (527 °C);

2. Tensile strength less than 7 × 106 N/m2; and

3. Compressive strength less than 14 × 106 N/m2;

d.

Planar absorbers made of sintered ferrite, having:

1. A specific gravity exceeding 4,4; and

2. A maximum operating temperature of 548 K (275 °C).

Materials for absorbing frequencies exceeding 1,5 × 1014 Hz but less than 3,7 × 1014 Hz and not transparent to visible light;

c. Technical Note:

Intrinsically conductive polymeric materials with a bulk electrical conductivity exceeding 10000 S/m (Siemens per metre) or a sheet (surface) resistivity of less than 100 ohms/square, based on any of the following polymers: Bulk electrical conductivity and sheet (surface) resistivity should be determined using ASTM D-257 or national equivalents.

1. Polyaniline;

2. Polypyrrole;

3. Polythiophene;

4. Poly phenylene-vinylene; or

5. Poly thienylene-vinylene.

1CMaterials Technical Note: Technical Notes:

1. The metal alloys in 1C002 are those containing a higher percentage by weight of the stated metal than of any other element.

2. Stress-rupture life should be measured in accordance with ASTM standard E-139 or national equivalents.

3. Low cycle fatigue life should be measured in accordance with ASTM Standard E-606 Recommended Practice for Constant-Amplitude Low-Cycle Fatigue Testing or national equivalents. Testing should be axial with an average stress ratio equal to 1 and a stress-concentration factor (Kt) equal to 1. The average stress is defined as maximum stress minus minimum stress divided by maximum stress.

Aluminides, as follows:

1. Nickel aluminides containing a minimum of 15 weight percent aluminium, a maximum of 38 weight percent aluminium and at least one additional alloying element;

2. Titanium aluminides containing 10 weight percent or more aluminium and at least one additional alloying element;

Metal alloys, as follows, made from material specified in 1C002.c.:

1. Nickel alloys with:

1. a.

A stress-rupture life of 10000 hours or longer at 923 K (650 °C) at a stress of 676 MPa; or

A low cycle fatigue life of 10000 cycles or more at 823 K (550 °C) at a maximum stress of 1,095 MPa;

2. Niobium alloys with:

2. a.

A stress-rupture life of 10000 hours or longer at 1073 K (800 °C) at a stress of 400 MPa; or

A low cycle fatigue life of 10000 cycles or more at 973 K (700 °C) at a maximum stress of 700 MPa;

3. Titanium alloys with:

3. a.

A stress-rupture life of 10000 hours or longer at 723 K (450 °C) at a stress of 200 MPa; or

A low cycle fatigue life of 10000 cycles or more at 723 K (450 °C) at a maximum stress of 400 MPa;

4. Aluminium alloys with a tensile strength of:

4. a.

240 MPa or more at 473 K (200 °C); or

415 MPa or more at 298 K (25 °C);

5. Magnesium alloys with:

5. a.

A tensile strength of 345 MPa or more; and

A corrosion rate of less than 1 mm/year in 3 % sodium chloride aqueous solution measured in accordance with ASTM standard G-31 or national equivalents;

Metal alloy powder or particulate material, having all of the following characteristics:

1. Technical Note:

Made from any of the following composition systems: X in the following equals one or more alloying elements.

Nickel alloys (Ni-Al-X, Ni-X-Al) qualified for turbine engine parts or components, i.e. with less than 3 non-metallic particles (introduced during the manufacturing process) larger than 100 μm in 109 alloy particles;

Niobium alloys (Nb-Al-X or Nb-X-Al, Nb-Si-X or Nb-X-Si, Nb-Ti-X or Nb-X-Ti);

Titanium alloys (Ti-Al-X or Ti-X-Al);

Aluminium alloys (Al-Mg-X or Al-X-Mg, Al-Zn-X or Al-X-Zn, Al-Fe-X or Al-X-Fe); or

Magnesium alloys (Mg-Al-X or Mg-X-Al);

2. Made in a controlled environment by any of the following processes:

2. a.

Vacuum atomisation;

Gas atomisation;

Rotary atomisation;

Splat quenching;

Melt spinning and comminution;

Melt extraction and comminution; or

Mechanical alloying; and

3. Capable of forming materials specified in 1C002.a. or 1C002.b.

Alloyed materials having all of the following characteristics:

1. Made from any of the composition systems specified in 1C002.c.1.;

2. In the form of uncomminuted flakes, ribbons or thin rods; and

3. Produced in a controlled environment by any of the following:

3. a.

Splat quenching;

Melt spinning; or

Melt extraction.

a. Technical Note:

Initial relative permeability of 120000 or more and a thickness of 0,05 mm or less; Measurement of initial permeability must be performed on fully annealed materials.

Magnetostrictive alloys, having any of the following characteristics:

1. A saturation magnetostriction of more than 5 × 10-4; or

2. A magnetomechanical coupling factor (k) of more than 0,8; or

c. Technical Note:

Amorphous or nanocrystalline alloy strips, having all of the following characteristics: Nanocrystalline materials in 1C003.c. are those materials having a crystal grain size of 50 nm or less, as determined by X-ray diffraction.

1. A composition having a minimum of 75 weight percent of iron, cobalt or nickel;

2. A saturation magnetic induction (Bs) of 1,6 T or more; and

3. Any of the following:

3. a.

A strip thickness of 0,02 mm or less; or

An electrical resistivity of 2 × 10-4 ohm cm or more.

A density exceeding 17,5 g/cm3;

An elastic limit exceeding 880 MPa;

An ultimate tensile strength exceeding 1270 MPa; and

An elongation exceeding 8 %.

Multifilamentary superconductivecomposite conductors containing one or more niobium-titanium filaments:

1. Embedded in a matrix other than a copper or copper-based mixed matrix; or

2. Having a cross-section area less than 0,28 × 10-4 mm2 (6 μm in diameter for circular filaments);

Superconductivecomposite conductors consisting of one or more superconductive filaments other than niobium-titanium, having all of the following:

1. A critical temperature at zero magnetic induction exceeding 9,85 K (– 263,31 °C) but less than 24 K (– 249,16 °C);

2. A cross-section area less than 0,28 × 10-4 mm2; and

3. Remaining in the superconductive state at a temperature of 4,2 K (– 268,96 °C) when exposed to a magnetic field corresponding to a magnetic induction of 12 T.

Hydraulic fluids containing, as their principal ingredients, any of the following compounds or materials:

1. Technical Note:

Synthetic silahydrocarbon oils, having all of the following: For the purpose of 1C006.a.1., silahydrocarbon oils contain exclusively silicon, hydrogen and carbon.

A flash point exceeding 477 K (204 °C);

A pour point at 239 K (– 34 °C) or less;

A viscosity index of 75 or more; and

A thermal stability at 616 K (343 °C); or

2. Technical Note:

Chlorofluorocarbons, having all of the following: For the purpose of 1C006.a.2., chlorofluorocarbons contain exclusively carbon, fluorine and chlorine.

No flash point;

An autogenous ignition temperature exceeding 977 K (704 °C);

A pour point at 219 K (– 54 °C) or less;

A viscosity index of 80 or more; and

A boiling point at 473 K (200 °C) or higher;

Lubricating materials containing, as their principal ingredients, any of the following compounds or materials:

1. Phenylene or alkylphenylene ethers or thio-ethers, or their mixtures, containing more than two ether or thio-ether functions or mixtures thereof; or

2. Fluorinated silicone fluids with a kinematic viscosity of less than 5000 mm2/s (5000 centistokes) measured at 298 K (25 °C);

Damping or flotation fluids with a purity exceeding 99,8 %, containing less than 25 particles of 200 μm or larger in size per 100 ml and made from at least 85 % of any of the following compounds or materials:

1. Dibromotetrafluoroethane;

2. Polychlorotrifluoroethylene (oily and waxy modifications only); or

3. Polybromotrifluoroethylene;

Fluorocarbon electronic cooling fluids, having all of the following characteristics:

1. Containing 85 % by weight or more of any of the following, or mixtures thereof:

1. a.

Monomeric forms of perfluoropolyalkylether-triazines or perfluoroaliphatic-ethers;

Perfluoroalkylamines;

Perfluorocycloalkanes; or

Perfluoroalkanes;

2. Density at 298 K (25 °C) of 1,5 g/ml or more;

3. In a liquid state at 273 K (0 °C); and

4. Containing 60 % or more by weight of fluorine.

1CMaterials Technical Note: Technical Notes: Technical Note: a.

Flash point is determined using the Cleveland Open Cup Method described in ASTM D-92 or national equivalents;

Pour point is determined using the method described in ASTM D-97 or national equivalents;

Viscosity index is determined using the method described in ASTM D-2270 or national equivalents;

Thermal stability is determined by the following test procedure or national equivalents: The specimen will be considered thermally stable if, on completion of the above procedure, all of the following conditions are met:

Twenty ml of the fluid under test is placed in a 46 ml type 317 stainless steel chamber containing one each of 12,5 mm (nominal) diameter balls of M-10 tool steel, 52100 steel and naval bronze (60 % Cu, 39 % Zn, 0,75 % Sn);

The chamber is purged with nitrogen, sealed at atmospheric pressure and the temperature raised to and maintained at 644 ± 6 K (371 ± 6 °C) for six hours;

1. The loss in weight of each ball is less than 10 mg/mm2 of ball surface;

2. The change in original viscosity as determined at 311 K (38 °C) is less than 25 %; and

3. The total acid or base number is less than 0,40;

Autogenous ignition temperature is determined using the method described in ASTM E-659 or national equivalents.

Base materials of single or complex borides of titanium having total metallic impurities, excluding intentional additions, of less than 5000 ppm, an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm;

Non- composite ceramic materials in crude or semi-fabricated form, composed of borides of titanium with a density of 98 % or more of the theoretical density; Note: 1C007.b. does not control abrasives.

Ceramic-ceramic composite materials with a glass or oxide-matrix and reinforced with fibres having all of the following:

1. Made from any of the following materials:

1. a.

Si-N;

Si-C;

Si-Al-O-N; or

Si-O-N; and

2. Having a specific tensile strength exceeding 12,7 × 103m;

Ceramic-ceramic composite materials, with or without a continuous metallic phase, incorporating particles, whiskers or fibres, where carbides or nitrides of silicon, zirconium or boron form the matrix;

Precursor materials (i.e., special purpose polymeric or metallo-organic materials) for producing any phase or phases of the materials specified in 1C007.c., as follows:

1. Polydiorganosilanes (for producing silicon carbide);

2. Polysilazanes (for producing silicon nitride);

3. Polycarbosilazanes (for producing ceramics with silicon, carbon and nitrogen components);

Ceramic-ceramic composite materials with an oxide or glass matrix reinforced with continuous fibres from any of the following systems: Note: 1C007.f. does not control composites containing fibres from these systems with a fibre tensile strength of less than 700 MPa at 1273 K (1000 °C) or fibre tensile creep resistance of more than 1 % creep strain at 100 MPa load and 1273 K (1000 °C) for 100 hours.

1. Al2O3; or

2. Si-C-N.

Note: 1C008.a. does not control non-fusible compression moulding powders or moulded forms.

1. Bismaleimides;

2. Aromatic polyamide-imides;

3. Aromatic polyimides;

4. Aromatic polyetherimides having a glass transition temperature (Tg) exceeding 513 K (240 °C) determined using the dry method described in ASTM D 3418;

Thermoplastic liquid crystal copolymers having a heat distortion temperature exceeding 523 K (250 °C) measured according to ASTM D-648, method A, or national equivalents, with a load of 1,82 N/mm2 and composed of:

1. Any of the following:

1. a.

Phenylene, biphenylene or naphthalene; or

Methyl, tertiary-butyl or phenyl substituted phenylene, biphenylene or naphthalene; and

2. Any of the following acids:

2. a.

Terephthalic acid;

6-hydroxy-2 naphthoic acid; or

4-hydroxybenzoic acid;

Polyarylene ether ketones, as follows:

1. Polyether ether ketone (PEEK);

2. Polyether ketone ketone (PEKK);

3. Polyether ketone (PEK);

4. Polyether ketone ether ketone ketone (PEKEKK);

Polyarylene ketones;

Polyarylene sulphides, where the arylene group is biphenylene, triphenylene or combinations thereof;

Polybiphenylenethersulphone.

1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: a.

Copolymers of vinylidene fluoride having 75 % or more beta crystalline structure without stretching;

Fluorinated polyimides containing 10 % by weight or more of combined fluorine;

Fluorinated phosphazene elastomers containing 30 % by weight or more of combined fluorine.

Organic fibrous or filamentary materials, having all of the following: Note: 1C010.a. does not control polyethylene.

1. A specific modulus exceeding 12,7 × 106 m; and

2. A specific tensile strength exceeding 23,5 × 104 m;

b. Technical Note:

Carbon fibrous or filamentary materials, having all of the following: Note: 1C010.b. does not control fabric made from fibrous or filamentary materials for the repair of aircraft structures or laminates, in which the size of individual sheets does not exceed 50 cm × 90 cm. Properties for materials described in 1C010.b. should be determined using SACMA recommended methods SRM 12 to 17, or national equivalent tow tests, such as Japanese Industrial Standard JIS-R-7601, Paragraph 6.6.2., and based on lot average.

1. A specific modulus exceeding 12,7 × 106 m; and

2. A specific tensile strength exceeding 23,5 × 104 m;

Inorganic fibrous or filamentary materials, having all of the following: Note: 1C010.c. does not control:

1. A specific modulus exceeding 2,54 × 106 m; and

2. A melting, softening, decomposition or sublimation point exceeding 1922 K (1649 °C) in an inert environment;

1. Discontinuous, multiphase, polycrystalline alumina fibres in chopped fibre or random mat form, containing 3 weight percent or more silica, with a specific modulus of less than 10 × 106m;

2. Molybdenum and molybdenum alloy fibres;

3. Boron fibres;

4. Discontinuous ceramic fibres with a melting, softening, decomposition or sublimation point lower than 2043 K (1770 °C) in an inert environment.

Fibrous or filamentary materials:

1. Composed of any of the following:

1. a.

Polyetherimides specified in 1C008.a.; or

Materials specified in 1C008.b. to 1C008.f.; or;

2. Composed of materials specified in 1C010.d.1.a. or 1C010.d.1.b. and commingled with other fibres specified in 1C010.a., 1C010.b. or 1C010.c.;

e. Technical Note:

Resin-impregnated or pitch-impregnated fibres (prepregs), metal or carbon-coated fibres (preforms) or carbon fibre preforms, as follows: Notes: 1C010.e. does not control: The glass transition temperature (Tg) for 1C010.e. materials is determined using the method described in ASTM D 3418 using the dry method. The glass transition temperature for phenolic and epoxy resins is determined using the method described in ASTM D 4065 at a frequency of 1 Hz and a heating rate of 2 K (°C) per minute using the dry method.

1. Made from fibrous or filamentary materials specified in 1C010.a., 1C010.b. or 1C010.c.;

2. Made from organic or carbon fibrous or filamentary materials:

2. a.

With a specific tensile strength exceeding 17,7 × 104 m;

With a specific modulus exceeding 10,15 × 106 m;

Not controlled by 1C010.a. or 1C010.b.; and

When impregnated with materials specified in 1C008 or 1C009.b., having a glass transition temperature (Tg) exceeding 383 K (110 °C) or with phenolic or epoxy resins, having a glass transition temperature (Tg) equal to or exceeding 418 K (145 °C).

a.

Epoxy resin matrix impregnated carbon fibrous or filamentary materials (prepregs) for the repair of aircraft structures or laminates, in which the size of individual sheets of prepreg does not exceed 50 cm × 90 cm;

b.

Prepregs when impregnated with phenolic or epoxy resins having a glass transition temperature (Tg) less than 433 K (160 °C) and a cure temperature lower than the glass transition temperature.

a. Technical Note:

Metals in particle sizes of less than 60 μm whether spherical, atomised, spheroidal, flaked or ground, manufactured from material consisting of 99 % or more of zirconium, magnesium and alloys of these; The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium. Note: The metals or alloys listed in 1C011.a. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium.

Boron or boron carbide of 85 % purity or higher and a particle size of 60 μm or less; Note: The metals or alloys listed in 1C011.b. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium.

Guanidine nitrate;

Nitroguanidine (NQ) (CAS 556-88-7).

1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: a.

Plutonium in any form with a plutonium isotopic assay of plutonium-238 of more than 50 % by weight; Note: 1C012.a. does not control:

a.

Shipments with a plutonium content of 1 g or less;

b.

Shipments of 3 effective grammes or less when contained in a sensing component in instruments.

Previously separated neptunium-237 in any form. Note: 1C012.b. does not control shipments with a neptunium-237 content of 1 g or less.

Structural materials and coatings specially designed for reduced radar reflectivity;

Coatings, including paints, specially designed for reduced or tailored reflectivity or emissivity in the microwave, infrared or ultraviolet regions of the electromagnetic spectrum.

Fine grain recrystallised bulk graphites having a bulk density of 1,72 g/cm3 or greater, measured at 288 K (15 °C), and having a particle size of 100 micrometres or less, usable for missile nozzles and re-entry vehicle nose tips, as follows: N.B.: See also 0C004

1. Cylinders having a diameter of 120 mm or greater and a length of 50 mm or greater;

2. Tubes having an inner diameter of 65 mm or greater and a wall thickness of 25 mm or greater and a length of 50 mm or greater;

3. Blocks having a size of 120 mm × 120 mm × 50 mm or greater;

Pyrolytic or fibrous reinforced graphites, usable for missile nozzles and re-entry vehicle nose tips; N.B.: See also 0C004

Ceramic composite materials (dielectric constant less than 6 at frequencies from 100 Hz to 10000 MHz) usable for missile radomes;

Bulk machinable silicon-carbide reinforced unfired ceramic, usable for missile nose tips.

Propulsive substances:

1. Technical Note:

Spherical aluminium powder, other than that specified in the Military Goods Controls, with particles of uniform diameter of less than 200 μm and an aluminium content of 97 % by weight or more, if at least 10 % of the total weight is made up of particles of less than 63 μm, according to ISO 2591:1988 or national equivalents; A particle size of 63 μm (ISO R-565) corresponds to 250 mesh (Tyler) or 230 mesh (ASTM standard E-11).

2. Technical Note:

Metal fuels, other than that specified in the Military Goods Controls, in particle sizes of less than 60 μm, whether spherical, atomized, spheroidal, flaked or ground, consisting 97 % by weight or more of any of the following: The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium.

2. a.

Zirconium;

Beryllium;

Magnesium; or

Alloys of the metals specified by a. to c. above;

3. Liquid oxidiser substances as follows:

3. a.

Dinitrogen trioxide;

Nitrogen dioxide/dinitrogen tetroxide;

Dinitrogen pentoxide;

d. Technical Note:

Mixed Oxides of Nitrogen (MON); Mixed Oxides of Nitrogen (MON) are solutions of Nitric Oxide (NO) in Dinitrogen Tetroxide/Nitrogen Dioxide (N2O4/NO2) that can be used in missile systems. There are a range of compositions that can be denoted as MONi or MONij, where i and j are integers representing the percentage of Nitric Oxide in the mixture (e.g., MON3 contains 3 % Nitric Oxide, MON25 25 % Nitric Oxide. An upper limit is MON40, 40 % by weight).

SEE MILITARY GOODS CONTROLS FOR Inhibited Red Fuming Nitric Acid (IRFNA);

SEE MILITARY GOODS CONTROLS AND 1C238 FOR Compounds composed of fluorine and one or more of other halogens, oxygen or nitrogen.

Polymeric substances:

1. Carboxy-terminated polybutadiene (CTPB);

2. Hydroxy-terminated polybutadiene (HTPB), other than that specified in the Military Goods Controls;

3. Polybutadiene-acrylic acid (PBAA);

4. Polybutadiene-acrylic acid-acrylonitrile (PBAN);

Other propellant additives and agents:

1. SEE MILITARY GOODS CONTROLS FOR Carboranes, decaboranes, pentaboranes and derivatives thereof;

2. Triethylene glycol dinitrate (TEGDN);

3. 2-Nitrodiphenylamine;

4. Trimethylolethane trinitrate (TMETN);

5. Diethylene glycol dinitrate (DEGDN);

6. Ferrocene derivatives as follows:

6. a.

See Military Goods Controls for catocene;

Ethyl ferrocene;

Propyl ferrocene;

See Military Goods Controls for n-butyl ferrocene;

Pentyl ferrocene;

Dicyclopentyl ferrocene;

Dicyclohexyl ferrocene;

Diethyl ferrocene;

Dipropyl ferrocene;

Dibutyl ferrocene;

Dihexyl ferrocene;

Acetyl ferrocenes;

See Military Goods Controls for ferrocene Carboxylic acids;

See Military Goods Controls for butacene;

Other ferrocene derivatives usable as rocket propellant burning rate modifiers, other than those specified in the Military Goods Controls.

Having all of the following characteristics:

1. Containing 17,0-23,0 weight percent chromium and 4,5-7,0 weight percent nickel;

2. Having a titanium content of greater than 0,10 weight percent; and

3. A ferritic-austenitic microstructure (also referred to as a two-phase microstructure ) of which at least 10 percent is austenite by volume (according to ASTM E-1181-87 or national equivalents); and

Having any of the following forms:

1. Ingots or bars having a size of 100 mm or more in each dimension;

2. Sheets having a width of 600 mm or more and a thickness of 3 mm or less; or

3. Tubes having an outer diameter of 600 mm or more and a wall thickness of 3 mm or less.

Aluminium alloys having both of the following characteristics:

1. Capable of an ultimate tensile strength of 460 MPa or more at 293 K (20 °C); and

2. In the form of tubes or cylindrical solid forms (including forgings) with an outside diameter of more than 75 mm;

Titanium alloys having both of the following characteristics:

1. Capable of an ultimate tensile strength of 900 MPa or more at 293 K (20 °C); and

2. In the form of tubes or cylindrical solid forms (including forgings) with an outside diameter of more than 75 mm.

1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: a.

Carbon or aramid fibrous or filamentary materials having either of the following characteristics: Note: 1C210.a. does not control aramid fibrous or filamentary materials having 0,25 percent or more by weight of an ester based fibre surface modifier;

1. A specific modulus of 12,7 × 106 m or greater; or

2. A specific tensile strength of 235 × 103 m or greater;

Glass fibrous or filamentary materials having both of the following characteristics:

1. A specific modulus of 3,18 × 106 m or greater; and

2. A specific tensile strength of 76,2 × 103 m or greater;

c. Technical Note:

Thermoset resin impregnated continuous yarns, rovings, tows or tapes with a width of 15 mm or less (prepregs), made from carbon or glass fibrous or filamentary materials specified in 1C210.a. or b. The resin forms the matrix of the composite.

1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.

In forms with a hollow cylindrical symmetry (including cylinder segments) with an inside diameter between 100 mm and 300 mm; and

A mass greater than 20 kg.

Containing less than 1000 parts per million by weight of metallic impurities other than magnesium; and

Containing less than 10 parts per million by weight of boron.

Containing less than 200 parts per million by weight of metallic impurities other than calcium; and

Containing less than 10 parts per million by weight of boron.

A purity of 99,99 % or greater by weight; and

Containing less than 10 parts per million by weight of silver.

Metal windows for X-ray machines, or for bore-hole logging devices;

Oxide shapes in fabricated or semi-fabricated forms specially designed for electronic component parts or as substrates for electronic circuits;

Beryl (silicate of beryllium and aluminium) in the form of emeralds or aquamarines.

1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.

Elemental;

Compounds having a total alpha activity of 37 GBq/kg (1 Ci/kg) or greater;

Mixtures having a total alpha activity of 37 GBq/kg (1 Ci/kg) or greater;

Products or devices containing any of the foregoing.

Medical applicators;

A product or device containing less than 0,37 GBq (10 millicuries) of radium-226.

Nickel powder having both of the following characteristics:

1. A nickel purity content of 99,0 % or greater by weight; and

2. A mean particle size of less than 10 micrometres measured by American Society for Testing and Materials (ASTM) B330 standard;

Porous nickel metal produced from materials specified in 1C240.a.

Filamentary nickel powders;

Single porous nickel sheets with an area of 1000 cm2 per sheet or less.

1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note:

1. Thiodiglycol (111-48-8);

2. Phosphorus oxychloride (10025-87-3);

3. Dimethyl methylphosphonate (756-79-6);

4. SEE MILITARY GOODS CONTROLS FOR Methyl phosphonyl difluoride (676-99-3);

5. Methyl phosphonyl dichloride (676-97-1);

6. Dimethyl phosphite (868-85-9);

7. Phosphorus trichloride (7719-12-2);

8. Trimethyl phosphite (121-45-9);

9. Thionyl chloride (7719-09-7);

10. 3-Hydroxy-1-methylpiperidine (3554-74-3);

11. N,N-Diisopropyl-(beta)-aminoethyl chloride (96-79-7);

12. N,N-Diisopropyl-(beta)-aminoethane thiol (5842-07-9);

13. 3-Quinuclidinol (1619-34-7);

14. Potassium fluoride (7789-23-3);

15. 2-Chloroethanol (107-07-3);

16. Dimethylamine (124-40-3);

17. Diethyl ethylphosphonate (78-38-6);

18. Diethyl-N,N-dimethylphosphoramidate (2404-03-7);

19. Diethyl phosphite (762-04-9);

20. Dimethylamine hydrochloride (506-59-2);

21. Ethyl phosphinyl dichloride (1498-40-4);

22. Ethyl phosphonyl dichloride (1066-50-8);

23. SEE MILITARY GOODS CONTROLS FOR Ethyl phosphonyl difluoride (753-98-0);

24. Hydrogen fluoride (7664-39-3);

25. Methyl benzilate (76-89-1);

26. Methyl phosphinyl dichloride (676-83-5);

27. N,N-Diisopropyl-(beta)-amino ethanol (96-80-0);

28. Pinacolyl alcohol (464-07-3);

29. SEE MILITARY GOODS CONTROLS FOR O-Ethyl-2-diisopropylaminoethyl methyl phosphonite (57856-11-8);

30. Triethyl phosphite (122-52-1);

31. Arsenic trichloride (7784-34-1);

32. Benzilic acid (76-93-7);

33. Diethyl methylphosphonite (15715-41-0);

34. Dimethyl ethylphosphonate (6163-75-3);

35. Ethyl phosphinyl difluoride (430-78-4);

36. Methyl phosphinyl difluoride (753-59-3);

37. 3-Quinuclidone (3731-38-2);

38. Phosphorus pentachloride (10026-13-8);

39. Pinacolone (75-97-8);

40. Potassium cyanide (151-50-8);

41. Potassium bifluoride (7789-29-9);

42. Ammonium hydrogen fluoride (1341-49-7);

43. Sodium fluoride (7681-49-4);

44. Sodium bifluoride (1333-83-1);

45. Sodium cyanide (143-33-9);

46. Triethanolamine (102-71-6);

47. Phosphorus pentasulphide (1314-80-3);

48. Di-isopropylamine (108-18-9);

49. Diethylaminoethanol (100-37-8);

50. Sodium sulphide (1313-82-2);

51. Sulphur monochloride (10025-67-9);

52. Sulphur dichloride (10545-99-0);

53. Triethanolamine hydrochloride (637-39-8);

54. N,N-Diisopropyl-(Beta)-aminoethyl chloride hydrochloride (4261-68-1).

Viruses, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Chikungunya virus;

2. Congo-Crimean haemorrhagic fever virus;

3. Dengue fever virus;

4. Eastern equine encephalitis virus;

5. Ebola virus;

6. Hantaan virus;

7. Junin virus;

8. Lassa fever virus;

9. Lymphocytic choriomeningitis virus;

10. Machupo virus;

11. Marburg virus;

12. Monkey pox virus;

13. Rift Valley fever virus;

14. Tick-borne encephalitis virus (Russian Spring-Summer encephalitis virus);

15. Variola virus;

16. Venezuelan equine encephalitis virus;

17. Western equine encephalitis virus;

18. White pox;

19. Yellow fever virus;

20. Japanese encephalitis virus;

21. Kyasanur Forest virus;

22. Louping ill virus;

23. Murray Valley encephalitis virus;

24. Omsk haemorrhagic fever virus;

25. Oropouche virus;

26. Powassan virus;

27. Rocio virus;

28. St Louis encephalitis virus;

29. Hendra virus (Equine morbillivirus);

30. South American haemorrhagic fever (Sabia, Flexal, Guanarito);

31. Pulmonary & renal syndrome-haemorrhagic fever viruses (Seoul, Dobrava, Puumala, Sin Nombre);

32. Nipah virus.

Rickettsiae, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Coxiella burnetii;

2. Bartonella quintana (Rochalimaea quintana, Rickettsia quintana);

3. Rickettsia prowasecki;

4. Rickettsia rickettsii;

Bacteria, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Bacillus anthracis;

2. Brucella abortus;

3. Brucella melitensis;

4. Brucella suis;

5. Chlamydia psittaci;

6. Clostridium botulinum;

7. Francisella tularensis;

8. Burkholderia mallei (Pseudomonas mallei);

9. Burkholderia pseudomallei (Pseudomonas pseudomallei);

10. Salmonella typhi;

11. Shigella dysenteriae;

12. Vibrio cholerae;

13. Yersinia pestis;

14. Clostridium perfringens epsilon toxin producing types;

15. Enterohaemorrhagic Escherichia coli, serotype O157 and other verotoxin producing serotypes.

Toxins, as follows, and sub-unit of toxins thereof: Note: 1C351.d. does not control botulinum toxins or conotoxins in product form meeting all of the following criteria:

1. Botulinum toxins;

2. Clostridium perfringens toxins;

3. Conotoxin;

4. Ricin;

5. Saxitoxin;

6. Shiga toxin;

7. Staphylococcus aureus toxins;

8. Tetrodotoxin;

9. Verotoxin;

10. Microcystin (Cyanginosin);

11. Aflatoxins;

12. Abrin;

13. Cholera toxin;

14. Diacetoxyscirpenol toxin;

15. T-2 toxin;

16. HT-2 toxin;

17. Modeccin;

18. Volkensin;

19. Viscum album Lectin 1 (Viscumin).

1. Are pharmaceutical formulations designed for human administration in the treatment of medical conditions;

2. Are pre-packaged for distribution as medical products;

3. Are authorised by a state authority to be marketed as medical products.

1. African swine fever virus;

2. Avian influenza virus, which are:

2. a.

Uncharacterised; or

Defined in EC Directive 92/40/EC (OJ L 16, 23.1.1992, p. 19) as having high pathogenicity, as follows:

1. Type A viruses with an IVPI (intravenous pathogenicity index) in 6-week-old chickens of greater than 1,2; or

2. Type A viruses H5 or H7 subtype for which nucletide sequencing has demonstrated multiple basic amino acids at the cleavage site of haemagglutinin;

3. Bluetongue virus;

4. Foot and mouth disease virus;

5. Goat pox virus;

6. Porcine herpes virus (Aujeszky's disease);

7. Swine fever virus (Hog cholera virus);

8. Lyssa virus;

9. Newcastle disease virus;

10. Peste des petits ruminants virus;

11. Porcine enterovirus type 9 (swine vesicular disease virus);

12. Rinderpest virus;

13. Sheep pox virus;

14. Teschen disease virus;

15. Vesicular stomatitis virus;

16. Lumpy skin disease virus;

17. African horse sickness virus.

Mycoplasma mycoides, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such Mycoplasma mycoides.

Genetically modified organisms or genetic elements that contain nucleic acid sequences associated with pathogenicity of organisms specified in 1C351.a. to c. or 1C352 or 1C354;

Genetically modified organisms or genetic elements that contain nucleic acid sequences coding for any of the toxins specified in 1C351.d. or sub-units of toxins thereof.

1CMaterials Technical Note: Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.

1. Potato Andean latent tymovirus;

2. Potato spindle tuber viroid;

Bacteria, whether natural, enhanced or modified, either in the form of isolated live cultures or as material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Xanthomonas albilineans;

2. Xanthomonas campestris pv. citri including strains referred to as Xanthomonas campestris pv. citri types A,B,C,D,E or otherwise classified as Xanthomonas citri, Xanthomonas campestris pv. aurantifolia or Xanthomonas campestris pv. citrumelo;

3. Xanthomonas oryzae pv. Oryzae (Pseudomonas campestris pv. Oryzae);

4. Clavibacter michiganensis subsp. Sepedonicus (Corynebacterium michiganensis subsp. Sepedonicum or Corynebacterium Sepedonicum);

5. Ralstonia solanacearum Races 2 and 3 (Pseudomonas solanacearum Races 2 and 3 or Burkholderia solanacearum Races 2 and 3);

Fungi, whether natural, enhanced or modified, either in the form of isolated live cultures or as material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Colletotrichum coffeanum var. virulans (Colletotrichum kahawae);

2. Cochliobolus miyabeanus (Helminthosporium oryzae);

3. Microcyclus ulei (syn. Dothidella ulei);

4. Puccinia graminis (syn. Puccinia graminis f. sp. tritici);

5. Puccinia striiformis (syn. Puccinia glumarum);

6. Magnaporthe grisea (pyricularia grisea/pyricularia oryzae).

Toxic chemicals, as follows: Note 1: For exports to States not Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.1. and .a.2. in which no individually specified chemical constitutes more than 1 % by the weight of the mixture. Note 2: For exports to States Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.1. and .a.2. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. Note 3: 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.4., .a.5., .a.6. and .a.7. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture.

1. Amiton: O,O-Diethyl S-[2-(diethylamino) ethyl] phosphorothiolate (78-53-5) and corresponding alkylated or protonated salts;

2. PFIB: 1,1,3,3,3-Pentafluoro-2-(trifluoromethyl)-1-propene (382-21-8);

3. SEE MILITARY GOODS CONTROLS FOR BZ: 3-Quinuclidinyl benzilate (6581-06-2);

4. Phosgene: Carbonyl dichloride (75-44-5);

5. Cyanogen chloride (506-77-4);

6. Hydrogen cyanide (74-90-8);

7. Chloropicrin: Trichloronitromethane (76-06-2);

Toxic chemical precursors, as follows: Note 1: For exports to States not Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.b.1., .b.2., .b.3., .b.4., .b.5. and .b.6. in which no individually specified chemical constitutes more than 10 % by the weight of the mixture. Note 2: For exports to States Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.b.1., .b.2., .b.3., .b.4., .b.5. and .b.6. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. Note 3: 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.b.7., and .b.8. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture.

1. Chemicals, other than those specified in the Military Goods Controls or in 1C350, containing a phosphorus atom to which is bonded one methyl, ethyl or propyl (normal or iso) group but not further carbon atoms; Note: 1C450.b.1. does not control Fonofos: O-Ethyl S-phenyl ethylphosphonothiolothionate (944-22-9);

2. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] phosphoramidic dihalides;

3. Dialkyl [methyl, ethyl or propyl (normal or iso)] N,N-dialkyl [methyl, ethyl or propyl (normal or iso)]-phosphoramidates, other than Diethyl-N,N-dimethylphosphoramidate which is specified in 1C350;

4. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethyl-2-chlorides and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethyl chloride or N,N-Diisopropyl-(beta)-aminoethyl chloride hydrochloride which are specified in 1C350;

5. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethane-2-ols and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethanol (96-80-0) and N,N-Diethylaminoethanol (100-37-8) which are specified in 1C350; Note: 1C450.b.5. does not control the following:

5. a.

N,N-Dimethylaminoethanol (108-01-0) and corresponding protonated salts;

Protonated salts of N,N-Diethylaminoethanol (100-37-8);

6. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethane-2-thiols and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethane thiol which is specified in 1C350;

7. Ethyldiethanolamine (139-87-7);

8. Methyldiethanolamine (105-59-9).

1DSoftware 1D001Software specially designed or modified for the development, production or use of equipment specified in 1B001 to 1B003. 1D002Software for the development of organic matrix, metal matrix or carbon matrix laminates or composites. 1D101Software specially designed or modified for the use of goods specified in 1B101, 1B102, 1B115, 1B117, 1B118 or 1B119. 1D103Software specially designed for analysis of reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures. 1D201Software specially designed for the use of goods specified in 1B201.

1ETechnology 1E001Technology according to the General Technology Note for the development or production of equipment or materials specified in 1A001.b., 1A001.c., 1A002 to 1A005, 1B or 1C. 1E002Other technology, as follows: 1E101Technology according to the General Technology Note for the use of goods specified in 1A102, 1B001, 1B101, 1B102, 1B115 to 1B119, 1C001, 1C101, 1C107, 1C111 to 1C117, 1D101 or 1D103. 1E102Technology according to the General Technology Note for the development of software specified in 1D001, 1D101 or 1D103. 1E103Technology for the regulation of temperature, pressure or atmosphere in autoclaves or hydroclaves, when used for the production of composites or partially processed composites. 1E104Technology relating to the production of pyrolytically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. Note: 1E104 includes technology for the composition of precursor gases, flow-rates and process control schedules and parameters. 1E201Technology according to the General Technology Note for the use of goods specified in 1A002, 1A202, 1A225 to 1A227, 1B201, 1B225 to 1B233, 1C002.a.2.c. or d., 1C010.b., 1C202, 1C210, 1C216, 1C225 to 1C240 or 1D201. 1E202Technology according to the General Technology Note for the development or production of goods specified in 1A202 or 1A225 to 1A227. 1E203Technology according to the General Technology Note for the development of software specified in 1D201.

1ETechnology a.

Technology for the development or production of polybenzothiazoles or polybenzoxazoles;

Technology for the development or production of fluoroelastomer compounds containing at least one vinylether monomer;

Technology for the design or production of the following base materials or non-composite ceramic materials:

1. Base materials having all of the following characteristics:

1. a.

Any of the following compositions:

1. Single or complex oxides of zirconium and complex oxides of silicon or aluminium;

2. Single nitrides of boron (cubic crystalline forms);

3. Single or complex carbides of silicon or boron; or

4. Single or complex nitrides of silicon;

Total metallic impurities, excluding intentional additions, of less than:

1. 1000 ppm for single oxides or carbides; or

2. 5000 ppm for complex compounds or single nitrides; and

Being any of the following:

1. Zirconia with an average particle size equal to or less than 1 μm and no more than 10 % of the particles larger than 5 μm;

2. Other base materials with an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm; or

3. Having all of the following:

3. a.

Platelets with a length to thickness ratio exceeding 5;

Whiskers with a length to diameter ratio exceeding 10 for diameters less than 2 μm; and

Continuous or chopped fibres less than 10 μm in diameter;

2. Non-composite ceramic materials composed of the materials described in 1E002.c.1.; Note: 1E002.c.2. does not control technology for the design or production of abrasives.

Technology for the production of aromatic polyamide fibres;

Technology for the installation, maintenance or repair of materials specified in 1C001;

Technology for the repair of composite structures, laminates or materials specified in 1A002, 1C007.c. or 1C007.d. Note: 1E002.f. does not control technology for the repair of civil aircraft structures using carbon fibrous or filamentary materials and epoxy resins, contained in aircraft manufacturers' manuals.

CATEGORY 2 MATERIALS PROCESSING

2ASystems, Equipment and Components Technical Note:

N.B.: For quiet running bearings, see the Military Goods Controls 2A001Anti-friction bearings and bearing systems, as follows, and components therefor: Note: 2A001 does not control balls with tolerances specified by the manufacturer in accordance with ISO 3290 as grade 5 or worse. 2A225Crucibles made of materials resistant to liquid actinide metals, as follows: 2A226Valves having all of the following characteristics: For valves with different inlet and outlet diameters, the nominal size in 2A226 refers to the smallest diameter.

2ASystems, Equipment and Components a.

Ball bearings and solid roller bearings having all tolerances specified by the manufacturer in accordance with ISO 492 Tolerance Class 4 (or ANSI/ABMA Std 20 Tolerance Class ABEC-7 or RBEC-7, or other national equivalents), or better, and having both rings and rolling elements (ISO 5593) made from monel or beryllium; Note: 2A001.a. does not control tapered roller bearings.

Other ball bearings and solid roller bearings having all tolerances specified by the manufacturer in accordance with ISO 492 Tolerance Class 2 (or ANSI/ABMA Std 20 Tolerance Class ABEC-9 or RBEC-9, or other national equivalents), or better; Note: 2A001.b. does not control tapered roller bearings.

Active magnetic bearing systems using any of the following:

1. Materials with flux densities of 2.0 T or greater and yield strengths greater than 414 MPa;

2. All-electromagnetic 3D homopolar bias designs for actuators; or

3. High temperature (450 K (117 °C) and above) position sensors.

Crucibles having both of the following characteristics:

1. A volume of between 150 cm3 and 8000 cm3; and

2. Made of or coated with any of the following materials, having a purity of 98 % or greater by weight:

2. a.

Calcium fluoride (CaF2);

Calcium zirconate (metazirconate) (CaZrO3);

Cerium sulphide (Ce2S3);

Erbium oxide (erbia) (Er2O3);

Hafnium oxide (hafnia) (HfO2);

Magnesium oxide (MgO);

Nitrided niobium-titanium-tungsten alloy (approximately 50 % Nb, 30 % Ti, 20 % W);

Yttrium oxide (yttria) (Y2O3); or

Zirconium oxide (zirconia) (ZrO2);

Crucibles having both of the following characteristics:

1. A volume of between 50 cm3 and 2000 cm3; and

2. Made of or lined with tantalum, having a purity of 99,9 % or greater by weight;

Crucibles having all of the following characteristics:

1. A volume of between 50 cm3 and 2000 cm3;

2. Made of or lined with tantalum, having a purity of 98 % or greater by weight; and

3. Coated with tantalum carbide, nitride, boride, or any combination thereof.

A nominal size of 5 mm or greater;

Having a bellows seal; and

Wholly made of or lined with aluminium, aluminium alloy, nickel, or nickel alloy containing more than 60 % nickel by weight.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: Technical Note: Technical Notes: Technical Note:

2B001Machine tools and any combination thereof, for removing (or cutting) metals, ceramics or composites, which, according to the manufacturer’s technical specification, can be equipped with electronic devices for numerical control, and specially designed components as follows: N.B.: SEE ALSO 2B201. Note 1: 2B001 does not control special purpose machine tools limited to the manufacture of gears. For such machines see 2B003. Note 2: 2B001 does not control special purpose machine tools limited to the manufacture of any of the following parts: Note 3: A machine tool having at least two of the three turning, milling or grinding capabilities (e.g. a turning machine with milling capability), must be evaluated against each applicable entry 2B001.a., b. or c. 2B002Numerically controlled machine tools using a magnetorheological finishing (MRF) process [W]. For the purposes of 2B002, MRF is a material removal process using an abrasive magnetic fluid whose viscosity is controlled by a magnetic field. 2B003Numerically controlled or manual machine tools, and specially designed components, controls and accessories therefor, specially designed for the shaving, finishing, grinding or honing of hardened (Rc = 40 or more) spur, helical and double-helical gears with a pitch diameter exceeding 1250 mm and a face width of 15 % of pitch diameter or larger finished to a quality of AGMA 14 or better (equivalent to ISO 1328 class 3). 2B004Hotisostatic presses, having all of the following, and specially designed components and accessories therefor: N.B.: SEE ALSO 2B104 and 2B204. The inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other. N.B.: For specially designed dies, moulds and tooling see 1B003, 9B009 and the Military Goods Controls. 2B005Equipment specially designed for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows, for non-electronic substrates, by processes shown in the Table and associated Notes following 2E003.f., and specially designed automated handling, positioning, manipulation and control components therefor: Note: 2B005 does not control chemical vapour deposition, cathodic arc, sputter deposition, ion plating or ion implantation equipment specially designed for cutting or machining tools. 2B006Dimensional inspection or measuring systems and equipment, as follows: N.B.: SEE ALSO 2B206. Note: Machine tools which can be used as measuring machines are controlled if they meet or exceed the criteria specified for the machine tool function or the measuring machine function. 2B007Robots having any of the following characteristics and specially designed controllers and end-effectors therefor: N.B.: SEE ALSO 2B207. 2B008Assemblies or units, specially designed for machine tools, or dimensional inspection or measuring systems and equipment, as follows: 2B009Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with numerical control units or a computer control and having all of the following: N.B.: SEE ALSO 2B109 AND 2B209. Machines combining the function of spin-forming and flow-forming are for the purpose of 2B009 regarded as flow-forming machines. 2B104Isostatic presses, other than those specified in 2B004, having all of the following: N.B.: SEE ALSO 2B204. 2B105CVD furnaces, other than those specified in 2B005.a., designed or modified for the densification of carbon-carbon composites. 2B109Flow-forming machines, other than those specified in 2B009, and specially designed components as follows: N.B.: SEE ALSO 2B209. Note: 2B109 does not control machines that are not usable in the production of propulsion components and equipment (e.g. motor cases) for systems specified in 9A005, 9A007.a. or 9A105.a. Machines combining the function of spin-forming and flow-forming are for the purpose of 2B109 regarded as flow-forming machines. 2B116Vibration test systems, equipment and components therefor, as follows: In 2B116, bare table means a flat table, or surface, with no fixture or fittings. 2B117Equipment and process controls, other than those specified in 2B004, 2B005.a., 2B104 or 2B105, designed or modified for densification and pyrolysis of structural composite rocket nozzles and re-entry vehicle nose tips. 2B119Balancing machines and related equipment, as follows: N.B.: SEE ALSO 2B219. 2B120Motion simulators or rate tables having all of the following characteristics: Note: 2B120 does not control rotary tables designed or modified for machine tools or for medical equipment. For controls on machine tool rotary tables see 2B008. 2B121Positioning tables (equipment capable of precise rotary positioning in any axes), other than those specified in 2B120, having all the following characteristics: Note: 2B121 does not control rotary tables designed or modified for machine tools or for medical equipment. For controls on machine tool rotary tables see 2B008. 2B122Centrifuges capable of imparting accelerations above 100 g and having slip rings capable of transmitting electrical power and signal information. 2B201Machine tools, other than those specified in 2B001, as follows, for removing or cutting metals, ceramics or composites, which, according to the manufacturer’s technical specification, can be equipped with electronic devices for simultaneous contouring control in two or more axes: 2B204Isostatic presses, other than those specified in 2B004 or 2B104, and related equipment, as follows: In 2B204 the inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other. 2B206Dimensional inspection machines, instruments or systems, other than those specified in 2B006, as follows: Note 1: Machine tools that can be used as measuring machines are controlled if they meet or exceed the criteria specified for the machine tool function or the measuring machine function. Note 2: A machine specified in 2B206 is controlled if it exceeds the control threshold anywhere within its operating range. 2B207Robots, end-effectors and control units, other than those specified in 2B007, as follows: 2B209Flow forming machines, spin forming machines capable of flow forming functions, other than those specified in 2B009 or 2B109, and mandrels, as follows: Note: 2B209.a. includes machines which have only a single roller designed to deform metal plus two auxiliary rollers which support the mandrel, but do not participate directly in the deformation process. 2B219Centrifugal multiplane balancing machines, fixed or portable, horizontal or vertical, as follows: 2B225Remote manipulators that can be used to provide remote actions in radiochemical separation operations or hot cells, having either of the following characteristics: Remote manipulators provide translation of human operator actions to a remote operating arm and terminal fixture. They may be of master/slave type or operated by joystick or keypad. 2B226Controlled atmosphere (vacuum or inert gas) induction furnaces, and power supplies therefor, as follows: N.B.: SEE ALSO 3B. Note: 2B226.a. does not control furnaces designed for the processing of semiconductor wafers. 2B227Vacuum or other controlled atmosphere metallurgical melting and casting furnaces and related equipment as follows: 2B228Rotor fabrication or assembly equipment, rotor straightening equipment, bellows-forming mandrels and dies, as follows: 2B230Pressure transducers capable of measuring absolute pressures at any point in the range 0 to 13 kPa and having both of the following characteristics: For the purposes of 2B230, accuracy includes non-linearity, hysteresis and repeatability at ambient temperature. 2B231Vacuum pumps having all of the following characteristics: 2B232Multistage light gas guns or other high-velocity gun systems (coil, electromagnetic, and electrothermal types, and other advanced systems) capable of accelerating projectiles to 2 km/s or greater. 2B350Chemical manufacturing facilities, equipment and components, as follows: Carbon graphite is a composition consisting of amorphous carbon and graphite, in which the graphite content is eight percent or more by weight. 2B351Toxic gas monitoring systems, as follows; and dedicated detectors therefor: 2B352Equipment capable of use in handling biological materials, as follows:

2BTest, Inspection and Production Equipment Technical Notes:

1. Secondary parallel contouring axes, (e.g., the w-axis on horizontal boring mills or a secondary rotary axis the centre line of which is parallel to the primary rotary axis) are not counted in the total number of contouring axes. Rotary axes need not rotate over 360°. A rotary axis can be driven by a linear device (e.g. a screw or a rack-and-pinion).

2. For the purposes of 2B, the number of axes which can be co-ordinated simultaneosly for contouring control is the number of axes which affect relative movement between any one workpiece and a tool, cutting head or grinding wheel which is cutting or removing material from the workpiece. This does not include any additional axes which affect other relative movement within the machine. Such axes include:

2. a.

Wheel-dressing systems in grinding machines;

Parallel rotary axes designed for mounting of separate workpieces;

Co-linear rotary axes designed for manipulating the same workpiece by holding it in a chuck from different ends.

3. Axis nomenclature shall be in accordance with International Standard ISO 841, Numerical Control Machines — Axis and Motion Nomenclature.

4. For the purposes of 2B001 to 2B009 a tilting spindle is counted as a rotary axis.

5. Stated positioning accuracy levels derived from measurements made according to ISO 230/2 (1988) or national equivalents may be used for each machine tool model instead of individual machine tests. Stated positioning accuracy means the accuracy value provided to the competent authorities of the Member State in which the exporter is established as representative of the accuracy of a machine model. Determination of Stated Values

5. a.

Select five machines of a model to be evaluated;

Measure the linear axis accuracies according to ISO 230/2 (1988);

Determine the A-values for each axis of each machine. The method of calculating the A-value is described in the ISO standard;

Determine the mean value of the A-value of each axis. This mean value Â becomes the stated value of each axis for the model (Âx Ây...);

Since the Category 2 list refers to each linear axis there will be as many stated values as there are linear axes;

If any axis of a machine model not controlled by 2B001.a. to 2B001.c. or 2B201 has a stated accuracy Â of 6 microns for grinding machines and 8 microns for milling and turning machines or better, the manufacturer should be required to reaffirm the accuracy level once every eighteen months.

Crank shafts or cam shafts;

Tools or cutters;

Extruder worms;

Engraved or facetted jewellery parts.

Machine tools for turning, having all of the following characteristics: Note: 2B001.a. does not control turning machines specially designed for the production of contact lenses.

1. Positioning accuracy with all compensations available equal to or less (better) than 6 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; and

2. Two or more axes which can be coordinated simultaneously for contouring control;

Machine tools for milling, having any of the following characteristics:

1. Having all of the following:

1. a.

Positioning accuracy with all compensations available equal to or less (better) than 6 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; and

Three linear axes plus one rotary axis which can be coordinated simultaneously for contouring control;

2. Five or more axes which can be coordinated simultaneously for contouring control; or

3. A positioning accuracy for jig boring machines, with all compensations available, equal to or less (better) than 4 μm according to ISO 230/2 (1988) or national equivalents along any linear axis;

4. Fly cutting machines, having all of the following characteristics:

4. a.

Spindlerun-out and camming less (better) than 0,0004 mm TIR; and

Angular deviation of slide movement (yaw, pitch and roll) less (better) than 2 seconds of arc, TIR over 300 mm of travel.

Machine tools for grinding, having any of the following characteristics: Note: 2B001.c. does not control grinding machines, as follows:

1. Having all of the following:

1. a.

Positioning accuracy with all compensations available equal to or less (better) than 4 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; and

Three or more axes which can be coordinated simultaneously for contouring control; or

2. Five or more axes which can be coordinated simultaneously for contouring control;

1. Cylindrical external, internal, and external-internal grinding machines having all the following characteristics:

1. a.

Limited to cylindrical grinding; and

Limited to a maximum workpiece capacity of 150 mm outside diameter or length.

2. Machines designed specifically as jig grinders having any of the following characteristics:

2. a.

The c-axis is used to maintain the grinding wheel normal to the work surface; or

The a-axis is configured to grind barrel cams.

3. Surface grinders.

Electrical discharge machines (EDM) of the non-wire type which have two or more rotary axes which can be coordinated simultaneously for contouring control;

Machine tools for removing metals, ceramics or composites having all of the following characteristics:

1. Removing material by means of any of the following:

1. a.

Water or other liquid jets, including those employing abrasive additives;

Electron beam; or

Laser beam; and

2. Having two or more rotary axes which:

2. a.

Can be coordinated simultaneously for contouring control; and

Have a positioning accuracy of less (better) than 0,003°;

Deep-hole-drilling machines and turning machines modified for deep-hole-drilling, having a maximum depth-of-bore capability exceeding 5000 mm and specially designed components therefor.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: a.

A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and

Any of the following:

1. A maximum working pressure exceeding 207 MPa;

2. A controlled thermal environment exceeding 1773 K (1500 °C); or

3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: a.

Stored programme controlled chemical vapour deposition (CVD) production equipment having all of the following: N.B.: SEE ALSO 2B105.

1. Process modified for one of the following:

1. a.

Pulsating CVD;

Controlled nucleation thermal deposition (CNTD); or

Plasma enhanced or plasma assisted CVD; and

2. Any of the following:

2. a.

Incorporating high vacuum (equal to or less than 0.01 Pa) rotating seals; or

Incorporating in situ coating thickness control;

Stored programme controlled ion implantation production equipment having beam currents of 5 mA or more;

Stored programme controlled electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW, having any of the following:

1. A liquid pool level laser control system which regulates precisely the ingots feed rate; or

2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;

Stored programme controlled plasma spraying production equipment having any of the following characteristics:

1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0.01 Pa prior to the spraying process; or

2. Incorporating in situ coating thickness control;

Stored programme controlled sputter deposition production equipment capable of current densities of 0,1 mA/mm2 or higher at a deposition rate of 15 μm/h or more;

Stored programme controlled cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;

Stored programme controlled ion plating production equipment allowing for the in situ measurement of any of the following:

1. Coating thickness on the substrate and rate control; or

2. Optical characteristics.

Computer controlled, numerically controlled or stored programme controlled co-ordinate measuring machines (CMM), having a three dimensional (volumetric) maximum permissible error of indication (MPEE) at any point within the operating range of the machine (i.e., within the length of axes) equal to or less (better) than (1,7 + L/1000) μm (L is the measured length in mm), tested according to ISO 10360-2 (2001);

Linear and angular displacement measuring instruments, as follows:

1. Technical Note:

Linear displacement measuring instruments having any of the following: For the purpose of 2B006.b.1. linear displacement means the change of distance between the measuring probe and the measured object. Note: 2B006.b.1. does not control measuring interferometer systems, without closed or open loop feedback, containing a laser to measure slide movement errors of machine-tools, dimensional inspection machines or similar equipment.

Non-contact type measuring systems with a resolution equal to or less (better) than 0,2 μm within a measuring range up to 0,2 mm;

Linear voltage differential transformer systems having all of the following characteristics:

1. Linearity equal to or less (better) than 0,1 % within a measuring range up to 5 mm; and

2. Drift equal to or less (better) than 0.1% per day at a standard ambient test room temperature ± 1 K; or

Measuring systems having all of the following:

1. Containing a laser; and

2. Maintaining, for at least 12 hours, over a temperature range of ± 1 K around a standard temperature and at a standard pressure, all of the following:

2. a.

A resolution over their full scale of 0,1 μm or less (better); and

A measurement uncertainty equal to or less (better) than (0,2 + L/2000) μm (L is the measured length in mm);

2. Angular displacement measuring instruments having an angular position deviation equal to or less (better) than 0,00025°; Note: 2B006.b.2. does not control optical instruments, such as autocollimators, using collimated light (e.g. laser light) to detect angular displacement of a mirror.

Equipment for measuring surface irregularities, by measuring optical scatter as a function of angle, with a sensitivity of 0,5 nm or less (better).

a. Technical Note:

Capable in real time of full three-dimensional image processing or full three-dimensional scene analysis to generate or modify programmes or to generate or modify numerical programme data; The scene analysis limitation does not include approximation of the third dimension by viewing at a given angle, or limited grey scale interpretation for the perception of depth or texture for the approved tasks (2 1/2 D).

Specially designed to comply with national safety standards applicable to explosive munitions environments;

c. Techncial Note:

Specially designed or rated as radiation-hardened to withstand a total radiation dose greater than 5 × 103 Gy (silicon) without operational degradation; or The term Gy(silicon) refers to the energy in Joules per kilogram absorbed by an unshielded silicon sample when exposed to ionising radiation.

Specially designed to operate at altitudes exceeding 30000 m.

Linear position feedback units (e.g., inductive type devices, graduated scales, infrared systems or laser systems) having an overall accuracy less (better) than (800 + (600 × L × 10 –3)) nm (L equals the effective length in mm); N.B.: For laser systems see also Note to 2B006.b.1.

Rotary position feedback units (e.g., inductive type devices, graduated scales, infrared systems or laser systems) having an accuracy less (better) than 0,00025°; N.B.: For laser systems see also Note to 2B006.b.1.

Compound rotary tables and tilting spindles, capable of upgrading, according to the manufacturer's specifications, machine tools to or above the levels specified in 2B.

Two or more controlled axes of which at least two can be coordinated simultaneously for contouring control; and

A roller force more than 60 kN.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: a.

Maximum working pressure of 69 MPa or greater;;

Designed to achieve and maintain a controlled thermal environment of 873 K (600 °C) or greater; and

Possessing a chamber cavity with an inside diameter of 254 mm or greater.

Flow-forming machines having all of the following:

1. According to the manufacturer's technical specification, can be equipped with numerical control units or a computer control, even when not equipped with such units; and

2. With more than two axes which can be coordinated simultaneously for contouring control.

Specially designed components for flow-forming machines specified in 2B009 or 2B109.a.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: a.

Vibration test systems employing feedback or closed loop techniques and incorporating a digital controller, capable of vibrating a system at 10 g rms or more over the entire range 20 Hz to 2000 Hz and imparting forces of 50 kN, measured bare table, or greater;

Digital controllers, combined with specially designed vibration test software, with a real time bandwidth greater than 5 kHz designed for use with vibration test systems specified in 2B116.a.;

Vibration thrusters (shaker units), with or without associated amplifiers, capable of imparting a force of 50 kN, measured bare table, or greater and usable in vibration test systems specified in 2B116.a.;

Test piece support structures and electronic units designed to combine multiple shaker units in a system capable of providing an effective combined force of 50 kN, measured bare table, or greater, and usable in vibration systems specified in 2B116.a.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.

Balancing machines having all the following characteristics: Note: 2B119.a. does not control balancing machines designed or modified for dental or other medical equipment.

1. Not capable of balancing rotors/assemblies having a mass greater than 3 kg;

2. Capable of balancing rotors/assemblies at speeds greater than 12500 rpm;

3. Capable of correcting unbalance in two planes or more; and

4. Capable of balancing to a residual specific unbalance of 0,2 g mm per kg of rotor mass;

b. Technical Note:

Indicator heads designed or modified for use with machines specified in 2B119.a. Indicator heads are sometimes known as balancing instrumentation.

Two axes or more;

Slip rings capable of transmitting electrical power and/or signal information; and

Having any of the following characteristics:

1. For any single axis having all of the following:

1. a.

Capable of rates of 400 degrees/s or more, or 30 degrees/s or less; and

A rate resolution equal to or less than 6 degrees/s and an accuracy equal to or less than 0,6 degrees/s;

2. Having a worst-case rate stability equal to or better (less) than plus or minus 0,05 % averaged over 10 degrees or more; or

3. A positioning accuracy equal to or better than 5 arc second.

Two axes or more; and

A positioning accuracy equal to or better than 5 arc second.

Machine tools for milling, having any of the following characteristics:

1. Positioning accuracies with all compensations available equal to or less (better) than 6 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; or

2. Two or more contouring rotary axes; Note: 2B201.a. does not control milling machines having the following characteristics:

2. a.

X-axis travel greater than 2 m; and

Overall positioning accuracy on the x-axis more (worse) than 30 μm.

Machine tools for grinding, having any of the following characteristics: Note: 2B201.b. does not control the following grinding machines:

1. Positioning accuracies with all compensations available equal to or less (better) than 4 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; or

2. Two or more contouring rotary axes.

a.

Cylindrical external, internal, and external-internal grinding machines having all of the following characteristics:

1. Limited to cylindrical grinding;

2. A maximum workpiece outside diameter or length of 150 mm;

3. Not more than two axes that can be coordinated simultaneously for contouring control; and

4. No contouring c axis;

b.

Jig grinders with axes limited to x, y, c and a where c axis is used to maintain the grinding wheel normal to the work surface, and the a axis is configured to grind barrel cams;

c.

Tool or cutter grinding machines with software specially designed for the production of tools or cutters; or

d.

Crankshaft or camshaft grinding machines.

Isostatic presses having both of the following characteristics:

1. Capable of achieving a maximum working pressure of 69 MPa or greater; and

2. A chamber cavity with an inside diameter in excess of 152 mm;

Dies, moulds and controls, specially designed for isostatic presses specified in 2B204.a.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: a.

Computer controlled or numerically controlled dimensional inspection machines having both of the following characteristics:

1. Two or more axes; and

2. A one-dimensional length measurement uncertainty equal to or less (better) than (1,25 + L/1000) μm tested with a probe of an accuracy of less (better) than 0,2 μm (L is the measured length in millimetres) (Ref.: VDI/VDE 2617 Parts 1 and 2);

Systems for simultaneously linear-angular inspection of hemishells, having both of the following characteristics:

1. Measurement uncertainty along any linear axis equal to or less (better) than 3,5 μm per 5 mm; and

2. Angular position deviation equal to or less than 0,02°.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes:

1. The probe used in determining the measurement uncertainty of a dimensional inspection system shall be described in VDI/VDE 2617 parts 2, 3 and 4.

2. All parameters of measurement values in 2B206 represent plus/minus i.e., not total band.

Robots or end-effectors specially designed to comply with national safety standards applicable to handling high explosives (for example, meeting electrical code ratings for high explosives);

Control units specially designed for any of the robots or end-effectors specified in 2B207.a.

Machines having both of the following characteristics:

1. Three or more rollers (active or guiding); and

2. Which, according to the manufacturer's technical specification, can be equipped with numerical control units or a computer control;

Rotor-forming mandrels designed to form cylindrical rotors of inside diameter between 75 mm and 400 mm.

Centrifugal balancing machines designed for balancing flexible rotors having a length of 600 mm or more and having all of the following characteristics:

1. Swing or journal diameter greater than 75 mm;

2. Mass capability of from 0,9 to 23 kg; and

3. Capable of balancing speed of revolution greater than 5000 r.p.m.;

Centrifugal balancing machines designed for balancing hollow cylindrical rotor components and having all of the following characteristics:

1. Journal diameter greater than 75 mm;

2. Mass capability of from 0,9 to 23 kg;

3. Capable of balancing to a residual imbalance equal to or less than 0,01 kg × mm/kg per plane; and

4. Belt drive type.

A capability of penetrating 0,6 m or more of hot cell wall (through-the-wall operation); or

A capability of bridging over the top of a hot cell wall with a thickness of 0,6 m or more (over-the-wall operation).

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: a.

Furnaces having all of the following characteristics:

1. Capable of operation above 1123 K (850 °C);

2. Induction coils 600 mm or less in diameter; and

3. Designed for power inputs of 5 kW or more;

Power supplies, with a specified power output of 5 kW or more, specially designed for furnaces specified in 2B226.a.

Arc remelt and casting furnaces having both of the following characteristics:

1. Consumable electrode capacities between 1000 cm3 and 20000 cm3, and

2. Capable of operating with melting temperatures above 1973 K (1700 °C);

Electron beam melting furnaces and plasma atomization and melting furnaces, having both of the following characteristics:

1. A power of 50 kW or greater; and

2. Capable of operating with melting temperatures above 1473 K (1200 °C).

Computer control and monitoring systems specially configured for any of the furnaces specified in 2B227.a. or b.

Rotor assembly equipment for assembly of gas centrifuge rotor tube sections, baffles, and end caps; Note: 2B228.a. includes precision mandrels, clamps, and shrink fit machines.

b. Technical Note:

Rotor straightening equipment for alignment of gas centrifuge rotor tube sections to a common axis; In 2B228.b. such equipment normally consists of precision measuring probes linked to a computer that subsequently controls the action of, for example, pneumatic rams used for aligning the rotor tube sections.

c. Technical Note:

Bellows-forming mandrels and dies for producing single-convolution bellows. In 2B228.c. the bellows have all of the following characteristics:

1. Inside diameter between 75 mm and 400 mm;

2. Length equal to or greater than 12,7 mm;

3. Single convolution depth greater than 2 mm; and

4. Made of high-strength aluminium alloys, maraging steel or high-strength fibrous or filamentary materials.

Pressure sensing elements made of or protected by aluminium, aluminium alloy, nickel or nickel alloy with more than 60 % nickel by weight; and

Having either of the following characteristics:

1. A full scale of less than 13 kPa and anaccuracy of better than ± 1 % of full scale; or

2. A full scale of 13 kPa or greater and an accuracy of better than ± 130 Pa.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: Technical Note: a.

Input throat size equal to or greater than 380 mm;

Pumping speed equal to or greater than 15 m3/s; and

Capable of producing an ultimate vacuum better than 13 mPa.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: Technical Note: Technical Notes:

1. The pumping speed is determined at the measurement point with nitrogen gas or air.

2. The ultimate vacuum is determined at the input of the pump with the input of the pump blocked off.

Reaction vessels or reactors, with or without agitators, with total internal (geometric) volume greater than 0,1 m3 (100 litres) and less than 20 m3 (20000 litres), where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers;

3. Glass (including vitrified or enamelled coating or glass lining);

4. Nickel or alloys with more than 40 % nickel by weight;

5. Tantalum or tantalum alloys;

6. Titanium or titanium alloys; or

7. Zirconium or zirconium alloys;

Agitators for use in reaction vessels or reactors specified in 2B350.a.; and impellers, blades or shafts designed for such agitators, where all surfaces of the agitator that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers;

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Nickel or alloys with more than 40 % nickel by weight;

5. Tantalum or tantalum alloys;

6. Titanium or titanium alloys; or

7. Zirconium or zirconium alloys;

Storage tanks, containers or receivers with a total internal (geometric) volume greater than 0,1 m3 (100 litres) where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers;

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Nickel or alloys with more than 40 % nickel by weight;

5. Tantalum or tantalum alloys;

6. Titanium or titanium alloys; or

7. Zirconium or zirconium alloys;

Heat exchangers or condensers with a heat transfer surface area greater than 0,15 m2, and less than 20 m2; and tubes, plates, coils or blocks (cores) designed for such heat exchangers or condensers, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers;

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or carbon graphite;

5. Nickel or alloys with more than 40 % nickel by weight;

6. Tantalum or tantalum alloys;

7. Titanium or titanium alloys;

8. Zirconium or zirconium alloys;

9. Silicon carbide; or

10. Titanium carbide;

Distillation or absorption columns of internal diameter greater than 0,1 m; and liquid distributers, vapour distributers or liquid collectors designed for such distillation or absorbtion columns, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers;

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or carbon graphite;

5. Nickel or alloys with more than 40 % nickel by weight;

6. Tantalum or tantalum alloys;

7. Titanium or titanium alloys; or

8. Zirconium or zirconium alloys;

Remotely operated filling equipment in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight; or

2. Nickel or alloys with more than 40 % nickel by weight;

Valves with nominal sizes greater than 10 mm and casings (valve bodies) or preformed casing liners designed for such valves, in which all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers;

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Nickel or alloys with more than 40 % nickel by weight;

5. Tantalum or tantalum alloys;

6. Titanium or titanium alloys; or

7. Zirconium or zirconium alloys;

Multi-walled piping incorporating a leak detection port, in which all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers;

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or carbon graphite;

5. Nickel or alloys with more than 40 % nickel by weight;

6. Tantalum or tantalum alloys;

7. Titanium or titanium alloys; or

8. Zirconium or zirconium alloys;

Multiple-seal, canned drive, magnetic drive, bellows or diaphragm pumps, with manufacturer's specified maximum flow-rate greater than 0,6 m3/hour, or vacuum pumps with manufacturer's specified maximum flow-rate greater than 5 m3/hour (under standard temperature (273 K (0 °C)) and pressure (101,3 kPa) conditions); and casings (pump bodies), preformed casing liners, impellers, rotors or jet pump nozzles designed for such pumps, in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Ceramics;

3. Ferrosilicon;

4. Fluoropolymers;

5. Glass (including vitrified or enamelled coatings or glass lining);

6. Graphite or carbon graphite;

7. Nickel or alloys with more than 40 % nickel by weight;

8. Tantalum or tantalum alloys;

9. Titanium or titanium alloys; or

10. Zirconium or zirconium alloys;

Incinerators designed to destroy chemicals specified in entry 1C350, having specially designed waste supply systems, special handling facilities and an average combustion chamber temperature greater than 1273 K (1000 °C), in which all surfaces in the waste supply system that come into direct contact with the waste products are made from or lined with any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Ceramics; or

3. Nickel or alloys with more than 40% nickel by weight.

2BTest, Inspection and Production Equipment Technical Notes: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Note: Technical Notes: Technical Note: Technical Note: Technical Notes: Technical Note: a.

Designed for continuous operation and usable for the detection of chemical warfare agents or chemicals specified in 1C350, at concentrations of less than 0,3 mg/m3; or

Designed for the detection of cholinesterase-inhibiting activity.

a. Technical Note:

Complete biological containment facilities at P3, P4 containment level; P3 or P4 (BL3, BL4, L3, L4) containment levels are as specified in the WHO Laboratory Biosafety manual (2nd edition, Geneva 1993).

b. Technical Note:

Fermenters capable of cultivation of pathogenic micro-organisms, viruses or capable of toxin production, without the propagation of aerosols, and having a total capacity of 20 litres or more; Fermenters include bioreactors, chemostats and continuous-flow systems.

c. Technical Note:

Centrifugal separators, capable of continuous separation without the propagation of aerosols, having all the following characteristics: Centrifugal separators include decanters.

1. Flow rate exceeding 100 litres per hour;

2. Components of polished stainless steel or titanium;

3. One or more sealing joints within the steam containment area; and

4. Capable of in-situ steam sterilisation in a closed state;

Cross (tangential) flow filtration equipment and components as follows: Note: 2B352.d. does not control reverse osmosis equipment, as specified by the manufacturer.

1. Cross (tangential) flow filtration equipment capable of separation of pathogenic micro-organisms, viruses, toxins or cell cultures, without the propagation of aerosols, having both of the following characteristics:

1. a.

A total filtration area equal to or greater than 1 m2; and

b. Technical Note:

Capable of being sterilised or disinfected in-situ; In 2B352.d.1.b. sterlised denotes the elimination of all viable microbes from the equipment through the use of either physical (e.g. steam) or chemical agents. Disinfected denotes the destruction of potential microbial infectivity in the equipment through the use of chemical agents with a germicidal effect. Disinfection and sterilisation are distinct from sanitisation, the latter referring to cleaning procedures designed to lower the microbial content of equipment without necessarily achieving elimination of all microbial infectivity or viability.

2. Cross (tangential) flow filtration components (e.g. modules, elements, cassettes, cartridges, units or plates) with filtration area equal to or greater than 0,2 m2 for each component and designed for use in cross (tangential) flow filtration equipment specified in 2B352.d.;

Steam sterilisable freeze drying equipment with a condenser capacity exceeding 10 kg of ice in 24 hours and less than 1000 kg of ice in 24 hours;

Protective and containment equipment, as follows:

1. Protective full or half suits, or hoods dependent upon a tethered external air supply and operating under positive pressure; Note: 2B352.f.1. does not control suits designed to be worn with self-contained breathing apparatus.

2. Class III biological safety cabinets or isolators with similar performance standards; Note: In 2B352.f.2., isolators include flexible isolators, dry boxes, anaerobic chambers, glove boxes and laminar flow hoods (closed with vertical flow).

Chambers designed for aerosol challenge testing with micro-organisms, viruses or toxins, and having a capacity of 1 m3 or greater.

2CMaterials None.

2DSoftware 2D001Software, other than that specified in 2D002, specially designed or modified for the development, production or use of equipment specified in 2A001 or 2B001 to 2B009. 2D002Software for electronic devices, even when residing in an electronic device or system, enabling such devices or systems to function as a numerical control unit, capable of co-ordinating simultaneously more than four axes for contouring control. Note 1: 2D002 does not control software specially designed or modified for the operation of machine tools not specified in Category 2. Note 2: 2D002 does not control software for items specified in 2B002. See 2D001 for control of software for items specified in 2B002. 2D101Software specially designed or modified for the use of equipment specified in 2B104, 2B105, 2B109, 2B116, 2B117 or 2B119 to 2B122. N.B.: SEE ALSO 9D004. 2D201Software specially designed for the use of equipment specified in 2B204, 2B206, 2B207, 2B209, 2B219 or 2B227. 2D202Software specially designed or modified for the development, production or use of equipment specified in 2B201.

2ETechnology 2E001Technology according to the General Technology Note for the development of equipment or software specified in 2A, 2B or 2D. 2E002Technology according to the General Technology Note for the productionof equipment specified in 2A or 2B. 2E003Other technology, as follows: 2E101Technology according to the General Technology Note for the use of equipment or software specified in 2B004, 2B009, 2B104, 2B109, 2B116, 2B119 to 2B122 or 2D101. 2E201Technology according to the General Technology Note for the use of equipment orsoftware specified in 2A225, 2A226, 2B001, 2B006, 2B007.b., 2B007.c., 2B008, 2B009, 2B201, 2B204, 2B206, 2B207, 2B209, 2B225 to 2B232, 2D201 or 2D202. 2E301Technology according to the General Technology Note for the use of goods specified in 2B350 to 2B352.

2ETechnology a.

Technology for the development of interactive graphics as an integrated part in numerical control units for preparation or modification of part programmes;

Technology for metal-working manufacturing processes, as follows:

1. Technology for the design of tools, dies or fixtures specially designed for any of the following processes:

1. a.

Superplastic forming;

Diffusion bonding; or

Direct-acting hydraulic pressing;

2. Technical data consisting of process methods or parameters as listed below used to control:

2. a.

Superplastic forming of aluminium alloys, titanium alloys or superalloys:

1. Surface preparation;

2. Strain rate;

3. Temperature;

4. Pressure;

Diffusion bonding of superalloys or titanium alloys:

1. Surface preparation;

2. Temperature;

3. Pressure;

Direct-acting hydraulic pressing of aluminium alloys or titanium alloys:

1. Pressure;

2. Cycle time;

Hot isostatic densification of titanium alloys, aluminium alloys or superalloys:

1. Temperature;

2. Pressure;

3. Cycle time;

Technology for the development or production of hydraulic stretch-forming machines and dies therefor, for the manufacture of airframe structures;

Technology for the development of generators of machine tool instructions (e.g., part programmes) from design data residing inside numerical control units;

Technology for the development of integration software for incorporation of expert systems for advanced decision support of shop floor operations into numerical control units;

Technology for the application of inorganic overlay coatings or inorganic surface modification coatings (specified in column 3 of the following table) to non-electronic substrates (specified in column 2 of the following table), by processes specified in column 1 of the following table and defined in the Technical Note. Note: The table and Technical Note appear after entry 2E301.

Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Table — Deposition techniques — Notes deposition techniques

Coating Process (1) Substrate Resultant Coating Chemical Vapour Deposition (CVD) Superalloys Aluminides for internal passages Ceramics (19) and Low-expansion glasses (14) Silicides Carbides Dielectric layers (15) Diamond Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrixcomposites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Aluminides Alloyed aluminides (2) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Diamond Diamond-like carbon (17) Sensor window materials (9) Dielectric layers (15) Diamond Diamond-like carbon (17) Thermal-Evaporation Physical Vapour Deposition (TE-PVD) Physical Vapour Deposition (PVD): Electron-Beam (EB-PVD) Superalloys Alloyed silicides Alloyed aluminides (2) MCrAlX (5) Modified zirconia (12) Silicides Aluminides Mixtures thereof (4) Ceramics (19) and Low expansion glasses (14) Dielectric layers (15) Corrosion resistant steel (7) MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Carbon-carbon, Ceramic and Metal matrixcomposites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Borides Beryllium Sensor window materials (9) Dielectric layers (15) Titanium alloys (13) Borides Nitrides Ion assisted resistive heating Physical Vapour Deposition (PVD) (Ion Plating) Ceramics (19) and Low-expansion glasses (14) Dielectric layers (15) Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrixcomposites Dielectric layers (15) Cemented tungsten carbide (16), Silicon carbide Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Sensor window materials (9) Dielectric layers (15) Diamond-like carbon (17) Physical Vapour Deposition (PVD): Laser Vaporization Ceramics (19) and Low-expansion glasses (14) Silicides Dielectric layers (15) Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrixcomposites Dielectric layers (15) Cemented tungsten carbide (16), Silicon carbide Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Sensor window materials (9) Dielectric layers (15) Diamond-like carbon Physical Vapour Deposition (PVD): Cathodic Arc Discharge Superalloys Alloyed silicides Alloyed aluminides (2) MCrAlX (5) Polymers (11) and Organicmatrixcomposites Borides Carbides Nitrides Diamond-like carbon (17) Pack cementation (see A above for out-of-pack cementation) (10) Carbon-carbon, Ceramic and Metal matrixcomposites Silicides Carbides Mixtures thereof (4) Titanium alloys (13) Silicides Aluminides Alloyed aluminides (2) Refractory metals and alloys (8) Silicides Oxides Plasma spraying Superalloys MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Alloyed aluminides (2) Aluminium alloys (6) MCrAlX (5) Modified zirconia (12) Silicides Mixtures thereof (4) Refractory metals and alloys (8) Aluminides Silicides Carbides Corrosion resistant steel (7) MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Titanium alloys (13) Carbides Aluminides Silicides Alloyed aluminides (2) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Slurry Deposition Refractory metals and alloys (8) Fused silicides Fused aluminides except for resistance heating elements Carbon-carbon, Ceramic and Metal matrixcomposites Silicides Carbides Mixtures thereof (4) Sputter Deposition Superalloys Alloyed silicides Alloyed aluminides (2) Noble metal modified aluminides (3) MCrAlX (5) Modified zirconia (12) Platinum Mixtures thereof (4) Ceramics and Low-expansion glasses (14) Silicides Platinum Mixtures thereof (4) Dielectic layers (15) Diamond-like carbon (17) Titanium alloys (13) Borides Nitrides Oxides Silicides Aluminides Alloyed aluminides (2) Carbides Carbon-carbon, Ceramic and Metal matrixcomposites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Boron nitride Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Borides Dielectric layers (15) Beryllium Sensor window materials (9) Dielectric layers (15) Diamond-like carbon (17) Refractory metals and alloys (8) Aluminides Silicides Oxides Carbides Ion Implantation High temperature bearing steels Additions of Chromium Tantalum or Niobium (Columbium) Titanium alloys (13) Borides Nitrides Beryllium and Beryllium alloys Borides Cemented tungsten carbide (16) Carbides Nitrides Processes specified in Column 1 of the Table are defined as follows:

1. The term coating process includes coating repair and refurbishing as well as original coating.

2. The term alloyed aluminide coating includes single or multiple-step coatings in which an element or elements are deposited prior to or during application of the aluminide coating, even if these elements are deposited by another coating process. It does not, however, include the multiple use of single-step pack cementation processes to achieve alloyed aluminides.

3. The term noble metal modified aluminide coating includes multiple-step coatings in which the noble metal or noble metals are laid down by some other coating process prior to application of the aluminide coating.

4. The term mixtures thereof includes infiltrated material, graded compositions, co-deposits and multilayer deposits and are obtained by one or more of the coating processes specified in the Table.

5. MCrAlX refers to a coating alloy where M equals cobalt, iron, nickel or combinations thereof and X equals hafnium, yttrium, silicon, tantalum in any amount or other intentional additions over 0,01 weight percent in various proportions and combinations, except:

5. a.

CoCrAlY coatings which contain less than 22 weight percent of chromium, less than 7 weight percent of aluminium and less than 2 weight percent of yttrium;

CoCrAlY coatings which contain 22 to 24 weight percent of chromium, 10 to 12 weight percent of aluminium and 0,5 to 0,7 weight percent of yttrium; or

NiCrAlY coatings which contain 21 to 23 weight percent of chromium, 10 to 12 weight percent of aluminium and 0,9 to 1.1 weight percent of yttrium.

6. The term aluminium alloys refers to alloys having an ultimate tensile strength of 190 MPa or more measured at 293 K (20 °C).

7. The term corrosion resistant steel refers to AISI (American Iron and Steel Institute) 300 series or equivalent national standard steels.

8. Refractory metals and alloys include the following metals and their alloys: niobium (columbium), molybdenum, tungsten and tantalum.

9. Sensor window materials, as follows: alumina, silicon, germanium, zinc sulphide, zinc selenide, gallium arsenide, diamond, gallium phosphide, sapphire and the following metal halides: sensor window materials of more than 40 mm diameter for zirconium fluoride and hafnium fluoride.

10. Technology for single-step pack cementation of solid airfoils is not controlled by Category 2.

11. Polymers, as follows: polyimide, polyester, polysulphide, polycarbonates and polyurethanes.

12. Modified zirconia refers to additions of other metal oxides (e.g., calcia, magnesia, yttria, hafnia, rare earth oxides) to zirconia in order to stabilise certain crystallographic phases and phase compositions. Thermal barrier coatings made of zirconia, modified with calcia or magnesia by mixing or fusion, are not controlled.

13. Titanium alloys refers only to aerospace alloys having an ultimate tensile strength of 900 MPa or more measured at 293 K (20 °C).

14. Low-expansion glasses refers to glasses which have a coefficient of thermal expansion of 1 × 10 –7 K–1 or less measured at 293 K (20 °C).

15. Dielectric layers are coatings constructed of multi-layers of insulator materials in which the interference properties of a design composed of materials of various refractive indices are used to reflect, transmit or absorb various wavelength bands. Dielectric layers refers to more than four dielectric layers or dielectric/metal composite layers.

16. Cemented tungsten carbide does not include cutting and forming tool materials consisting of tungsten carbide/ (cobalt, nickel), titanium carbide/(cobalt, nickel), chromium carbide/nickel-chromium and chromium carbide/nickel.

17. Technology specially designed to deposit diamond-like carbon on any of the following is not controlled:

magnetic disk drives and heads, equipment for the manufacture of disposables, valves for faucets, acoustic diaphragms for speakers, engine parts for automobiles, cutting tools, punching-pressing dies, office automation equipment, microphones or medical devices or moulds, for casting or moulding of plastics, manufactured from alloys containing less than 5 % beryllium.

18. Silicon carbide does not include cutting and forming tool materials.

19. Ceramic substrates, as used in this entry, does not include ceramic materials containing 5 % by weight, or greater, clay or cement content, either as separate constituents or in combination.

a.

Chemical Vapour Deposition (CVD) is an overlay coating or surface modification coating process wherein a metal, alloy, composite, dielectric or ceramic is deposited upon a heated substrate. Gaseous reactants are decomposed or combined in the vicinity of a substrate resulting in the deposition of the desired elemental, alloy or compound material on the substrate. Energy for this decomposition or chemical reaction process may be provided by the heat of the substrate, a glow discharge plasma, or laser irradiation. N.B. 1 CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, controlled nucleation thermal deposition (CNTD), plasma enhanced or plasma assisted CVD processes. N.B. 2 Pack denotes a substrate immersed in a powder mixture. N.B. 3 The gaseous reactants used in the out-of-pack process are produced using the same basic reactions and parameters as the pack cementation process, except that the substrate to be coated is not in contact with the powder mixture.

b.

Thermal Evaporation-Physical Vapour Deposition (TE-PVD) is an overlay coating process conducted in a vacuum with a pressure less than 0,1 Pa wherein a source of thermal energy is used to vaporize the coating material. This process results in the condensation, or deposition, of the evaporated species onto appropriately positioned substrates. The addition of gases to the vacuum chamber during the coating process to synthesize compound coatings is an ordinary modification of the process. The use of ion or electron beams, or plasma, to activate or assist the coating's deposition is also a common modification in this technique. The use of monitors to provide in-process measurement of optical characteristics and thickness of coatings can be a feature of these processes. Specific TE-PVD processes are as follows:

1. Electron Beam PVD uses an electron beam to heat and evaporate the material which forms the coating;

2. Ion Assisted Resistive Heating PVD employs electrically resistive heating sources in combination with impinging ion beam(s) to produce a controlled and uniform flux of evaporated coating species;

3. Laser Vaporization uses either pulsed or continuous wave laser beams to vaporize the material which forms the coating;

4. Cathodic Arc Deposition employs a consumable cathode of the material which forms the coating and has an arc discharge established on the surface by a momentary contact of a ground trigger. Controlled motion of arcing erodes the cathode surface creating a highly ionized plasma. The anode can be either a cone attached to the periphery of the cathode, through an insulator, or the chamber. Substrate biasing is used for non line-of-sight deposition. N.B. This definition does not include random cathodic arc deposition with non-biased substrates.

5. Ion Plating is a special modification of a general TE-PVD process in which a plasma or an ion source is used to ionize the species to be deposited, and a negative bias is applied to the substrate in order to facilitate the extraction of the species from the plasma. The introduction of reactive species, evaporation of solids within the process chamber, and the use of monitors to provide in-process measurement of optical characteristics and thicknesses of coatings are ordinary modifications of the process.

c.

Pack Cementation is a surface modification coating or overlay coating process wherein a substrate is immersed in a powder mixture (a pack), that consists of: The substrate and powder mixture is contained within a retort which is heated to between 1030 K (757 °C) and 1375 K (1,102 °C) for sufficient time to deposit the coating.

1. The metallic powders that are to be deposited (usually aluminium, chromium, silicon or combinations thereof);

2. An activator (normally a halide salt); and

3. An inert powder, most frequently alumina.

d.

Plasma Spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed. Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying. N.B. 1 Low pressure means less than ambient atmospheric pressure. N.B. 2 High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20 °C) at 0,1 MPa.

e.

Slurry Deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating.

f.

Sputter Deposition is an overlay coating process based on a momentum transfer phenomenon, wherein positive ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on an appropriately positioned substrate. N.B. 1 The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials. N.B. 2 Low-energy ion beams (less than 5 keV) can be used to activate the deposition.

g.

Ion Implantation is a surface modification coating process in which the element to be alloyed is ionized, accelerated through a potential gradient and implanted into the surface region of the substrate. This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition.

CATEGORY 3 ELECTRONICS

3ASystems, Equipment and Components Technical Note: Technical Note: Technical Note:

Note 1: The control status of equipment and components described in 3A001 or 3A002, other than those described in 3A001.a.3. to 3A001.a.10. or 3A001.a.12., which are specially designed for or which have the same functional characteristics as other equipment is determined by the control status of the other equipment. Note 2: The control status of integrated circuits described in 3A001.a.3. to 3A001.a.9. or 3A001.a.12. which are unalterably programmed or designed for a specific function for another equipment is determined by the control status of the other equipment. N.B.: When the manufacturer or applicant cannot determine the control status of the other equipment, the control status of the integrated circuits is determined in 3A001.a.3. to 3A001.a.9. and 3A001.a.12. If the integrated circuit is a silicon-based microcomputer microcircuit or microcontroller microcircuit described in 3A001.a.3. having an operand (data) word length of 8 bit or less, the control status of the integrated circuit is determined in 3A001.a.3. 3A001Electronic components, as follows: 3A002General purpose electronic equipment, as follows: 3A003Spray cooling thermal management systems employing closed loop fluid handling and reconditioning equipment in a sealed enclosure where a dielectric fluid is sprayed onto electronic components using specially designed spray nozzles that are designed to maintain electronic components within their operating temperature range, and specially designed components therefor. 3A101Electronic equipment, devices and components, other than those specified in 3A001, as follows: 3A201Electronic components, other than those specified in 3A001, as follows; 3A225Frequency changers or generators, other than those specified in 0B001.b.13., having all of the following characteristics: Frequency changers in 3A225 are also known as converters or inverters. 3A226High power direct current power supplies, other than those specified in 0B001.j.6., having both of the following characteristics: 3A227High voltage direct current power supplies, other than those specified in 0B001.j.5., having both of the following characteristics: 3A228Switching devices, as follows: 3A229Firing sets and equivalent high current pulse generators as follows: N.B.: SEE ALSO MILITARY GOODS CONTROLS 3A230High-speed pulse generators having both of the following characteristics: In 3A230, pulse transition time is defined as the time interval between 10 % and 90 % voltage amplitude. 3A231Neutron generator systems, including tubes, having both of the following characteristics: 3A232Detonators and multipoint initiation systems, as follows: N.B.: SEE ALSO MILITARY GOODS CONTROLS Note: 3A232 does not control detonators using only primary explosives, such as lead azide. In 3A232 the detonators of concern all utilise a small electrical conductor (bridge, bridge wire or foil) that explosively vapourises when a fast, high-current electrical pulse is passed through it. In nonslapper types, the exploding conductor starts a chemical detonation in a contacting high-explosive material such as PETN (Pentaerythritoltetranitrate). In slapper detonators, the explosive vapourisation of the electrical conductor drives a flyer or slapper across a gap and the impact of the slapper on an explosive starts a chemical detonation. The slapper in some designs is driven by a magnetic force. The term exploding foil detonator may refer to either an EB or a slapper-type detonator. Also, the word initiator is sometimes used in place of the word detonator. 3A233Mass spectrometers, other than those specified in 0B002.g., capable of measuring ions of 230 atomic mass units or greater and having a resolution of better than 2 parts in 230, as follows, and ion sources therefor:

3ASystems, Equipment and Components a.

General purpose integrated circuits, as follows: Note 1: The control status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001.a. Note 2: Integrated circuits include the following types:

Monolithic integrated circuits;

Hybrid integrated circuits;

Multichip integrated circuits;

Film type integrated circuits, including silicon-on-sapphire integrated circuits;

Optical integrated circuits.

1. Integrated circuits, designed or rated as radiation hardened to withstand any of the following:

1. a.

A total dose of 5 × 103 Gy (silicon) or higher;

A dose rate upset of 5 × 106 Gy (silicon)/s or higher; or

A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1013 n/cm2 or higher on silicon, or its equivalent for other materials; Note: 3A001.a.1.c. does not apply to Metal Insulator Semiconductors (MIS).

2. Microprocessor microcircuits, microcomputer microcircuits, microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or optical integrated circuits designed for signal processing, field programmable logic devices, neural network integrated circuits, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, electrical erasable programmable read-only memories (EEPROMs), flash memories or static random-access memories (SRAMs), having any of the following: Note: 3A001.a.2. does not apply to integrated circuits for civil automobiles or railway train applications.

2. a.

Rated for operation at an ambient temperature above 398 K (125 °C);

Rated for operation at an ambient temperature below 218 K (– 55 °C); or

Rated for operation over the entire ambient temperature range from 218 K (– 55 °C) et 398 K (125 °C);

3. Microprocessor microcircuits, microcomputer microcircuits and microcontroller microcircuits, having any of the following characteristics: Note: 3A001.a.3. includes digital signal processors, digital array processors and digital coprocessors.

3. a.

Not used;

Manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; or

More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel microprocessor microcircuits with a transfer rate exceeding 150 Mbyte/s;

4. Storage integrated circuits manufactured from a compound semiconductor;

5. Technical Notes:

Analogue-to-digital and digital-to-analogue converter integrated circuits, as follows:

5. a.

Analogue-to-digital converters having any of the following: N.B. SEE ALSO 3A101

1. A resolution of 8 bit or more, but less than 12 bit, with a total conversion time of less than 5 ns;

2. A resolution of 12 bit with a total conversion time of less than 20 ns;

3. A resolution of more than 12 bit but equal to or less than 14 bit with a total conversion time of less than 200 ns; or

4. A resolution of more than 14 bit with a total conversion time of less than 1 μs;

Digital-to-analogue converters with a resolution of 12 bit or more, and a settling time of less than 10 ns;

5. Technical Notes:

1. A resolution of n bit corresponds to a quantisation of 2n levels.

2. Total conversion time is the inverse of sample rate.

6. Electro-optical and optical integrated circuits designed for signal processing having all of the following:

6. a.

One or more than one internal laser diode;

One or more than one internal light detecting element; and

Optical waveguides;

7. Field programmable logic devices having any of the following: Note: 3A001.a.7. includes: N.B.: Field programmable logic devices are also known as field programmable gate or field programmable logic arrays.

7. a.

An equivalent usable gate count of more than 30000 (2 input gates);

A typical basic gate propagation delay time of less than 0,1 ns; or

A toggle frequency exceeding 133 MHz;

Simple Programmable Logic Devices (SPLDs)

Complex Programmable Logic Devices (CPLDs)

Field Programmable Gate Arrays (FPGAs)

Field Programmable Logic Arrays (FPLAs)

Field Programmable Interconnects (FPICs)

8. Not used;

9. Neural network integrated circuits;

10. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:

10. a.

More than 1000 terminals;

A typical basic gate propagation delay time of less than 0,1 ns; or

An operating frequency exceeding 3 GHz;

11. Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having any of the following:

11. a.

An equivalent gate count of more than 3000 (2 input gates); or

A toggle frequency exceeding 1,2 GHz;

12. Technical Note:

Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2N)/20480 ms, where N is the number of points; When N is equal to 1024 points, the formula in 3A001.a.12. gives an execution time of 500 μs.

Microwave or millimetre wave components, as follows:

1. Electronic vacuum tubes and cathodes, as follows: Note 1: 3A001.b.1. does not control tubes designed or rated for operation in any frequency band which meets all of the following characteristics: Note 2: 3A001.b.1. does not control non- space-qualified tubes which meet all of the following characteristics:

1. a.

Does not exceed 31,8 GHz; and

Is allocated by the ITU for radio-communications services, but not for radio-determination.

An average output power equal to or less than 50 W; and

Designed or rated for operation in any frequency band which meets all of the following characteristics:

1. Exceeds 31,8 GHz but does not exceed 43,5 GHz; and

2. Is allocated by the ITU for radio-communications services, but not for radio-determination.

Travelling wave tubes, pulsed or continuous wave, as follows:

1. Operating at frequencies exceeding 31,8 GHz;

2. Having a cathode heater element with a turn on time to rated RF power of less than 3 seconds;

3. Coupled cavity tubes, or derivatives thereof, with a fractional bandwidth of more than 7 % or a peak power exceeding 2,5 kW;

4. Helix tubes, or derivatives thereof, with any of the following characteristics:

4. a.

An instantaneous bandwidth of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5;

An instantaneous bandwidthof one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or

Being space qualified;

Crossed-field amplifier tubes with a gain of more than 17 dB;

Impregnated cathodes designed for electronic tubes producing a continuous emission current density at rated operating conditions exceeding 5 A/cm2;

2. Microwave monolithic integrated circuits (MMIC) power amplifiers having any of the following: Note 1: 3A001.b.2. does not control broadcast satellite equipment designed or rated to operate in the frequency range of 40,5 GHz to 42,5 GHz. Note 2: The control status of the MMIC whose operating frequency spans more than one frequency range, as defined by 3A001.b.2., is determined by the lowest average output power control threshold. Note 3: Notes 1 and 2 in the chapeau to Category 3 mean that 3A001.b.2. does not control MMICs if they are specially designed for other applications, e.g., telecommunications, radar, automobiles.

2. a.

Rated for operation at frequencies exceeding 3,2 GHz up to and including 6 GHz and with an average output power greater than 4W (36 dBm) with a fractional bandwidth greater than 15 %;

Rated for operation at frequencies exceeding 6 GHz up to and including 16 GHz and with an average output power greater than 1W (30 dBm) with a fractional bandwidth greater than 10 %;

Rated for operation at frequencies exceeding 16 GHz up to and including 31,8 GHz and with an average output power greater than 0,8W (29 dBm) with a fractional bandwidth greater than 10 %;

Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz;

Rated for operation at frequencies exceeding 37,5 GHz up to and including 43,5 GHz and with an average output power greater than 0,25W (24 dBm) with a fractional bandwidth greater than 10 %; or

Rated for operation at frequencies exceeding 43,5 GHz.

3. Microwave transistors having any of the following: Note: The control status of an item whose operating frequency spans more than one frequency range, as defined by 3A001.b.3., is determined by the lowest average output power control threshold.

3. a.

Rated for operation at frequencies exceeding 3,2 GHz up to and including 6 GHz and having an average output power greater than 60W (47,8 dBm);

Rated for operation at frequencies exceeding 6 GHz up to and including 31,8 GHz and having an average output power greater than 20W (43 dBm);

Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz and having an average output power greater than 0,5W (27 dBm);

Rated for operation at frequencies exceeding 37,5 GHz up to and including 43,5 GHz and having an average output power greater than 1W (30 dBm); or

Rated for operation at frequencies exceeding 43,5 GHz.

4. Microwave solid state amplifiers and microwave assemblies/modules containing microwave amplifiers having any of the following: N.B.: MMIC power amplifiers should be evaluated against the criteria in 3A001.b.2. Note 1: 3A001.b.4. does not control broadcast satellite equipment designed or rated to operate in the frequency range of 40,5 to 42,5 GHz. Note 2: The control status of an item whose operating frequency spans more than one frequency range, as defined by 3A001.b.4, is determined by the lowest average output power control threshold.

4. a.

Rated for operation at frequencies exceeding 3,2 GHz up to and including 6 GHz and with an average output power greater than 60W (47,8 dBm) with a fractional bandwidth greater than 15 %;

Rated for operation at frequencies exceeding 6 GHz up to and including 31,8 GHz and with an average output power greater than 15W (42 dBm) with a fractional bandwidth greater than 10 %;

Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz;

Rated for operation at frequencies exceeding 37,.5 GHz up to and including 43,5 GHz and with an average output power greater than 1W (30 dBm) with a fractional bandwidth greater than 10 %;

Rated for operation at frequencies exceeding 43,5 GHz; or

Rated for operation at frequencies above 3 GHz and having all of the following:

1. An average output power (in watts), P, greater than 150 divided by the maximum operating frequency (in GHz) squared [P>150 W*GHz2/fGHz2];

2. A fractional bandwidth of 5 % or greater; and

3. Any two sides perpendicular to one another with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d=15cm*GHz/ fGHz].

5. Electronically or magnetically tunable band-pass or band-stop filters having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs having any of the following:

5. a.

A band-pass bandwidth of more than 0,5 % of centre frequency; or

A band-stop bandwidth of less than 0,5 % of centre frequency;

6. Not used;

7. Mixers and converters designed to extend the frequency range of equipment described in 3A002.c., 3A002.e. or 3A002.f. beyond the limits stated therein;

8. Microwave power amplifiers containing tubes specified in 3A001.b. and having all of the following: Note: 3A001.b.8. does not control equipment designed or rated for operation in any frequency band which is allocated by the ITU for radio-communications services, but not for radio-determination.

8. a.

Operating frequencies above 3 GHz;

An average output power density exceeding 80 W/kg; and

A volume of less than 400 cm3;

Acoustic wave devices, as follows, and specially designed components therefor:

1. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., signal processing devices employing elastic waves in materials), having any of the following:

1. a.

A carrier frequency exceeding 2,5 GHz;

A carrier frequency exceeding 1 GHz, but not exceeding 2,5 GHz, and having any of the following:

1. A frequency side-lobe rejection exceeding 55 dB;

2. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;

3. A bandwidth greater than 250 MHz; or

4. A dispersive delay of more than 10 μs; or

A carrier frequency of 1 GHz or less, having any of the following:

1. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;

2. A dispersive delay of more than 10 μs; or

3. A frequency side-lobe rejection exceeding 55 dB and a bandwidth greater than 50 MHz;

2. Bulk (volume) acoustic wave devices (i.e., signal processing devices employing elastic waves) which permit the direct processing of signals at frequencies exceeding 1 GHz;

3. Acoustic-optic signal processing devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;

Electronic devices and circuits containing components, manufactured from superconductive materials specially designed for operation at temperatures below the critical temperature of at least one of the superconductive constituents, with any of the following:

1. Current switching for digital circuits using superconductive gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10– 14 J; or

2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10000;

High energy devices, as follows:

1. Batteries and photovoltaic arrays, as follows: Note: 3A001.e.1. does not control batteries with volumes equal to or less than 27 cm3 (e.g., standard C-cells or R14 batteries).

1. a.

Primary cells and batteries having an energy density exceeding 480 Wh/kg and rated for operation in the temperature range from below 243 K (– 30 °C) to above de 343 K (70 °C);

b. Technical Note:

Rechargeable cells and batteries having an energy density exceeding 150 Wh/kg after 75 charge/discharge cycles at a discharge current equal to C/5 hours (C being the nominal capacity in ampere hours) when operating in the temperature range from below 253 K (– 20 °C) to above 333 K (60 °C); Energy density is obtained by multiplying the average power in watts (average voltage in volts times average current in amperes) by the duration of the discharge in hours to 75 % of the open circuit voltage divided by the total mass of the cell (or battery) in kg.

Space qualified and radiation hardened photovoltaic arrays with a specific power exceeding 160 W/m2 at an operating temperature of 301 K (28 °C) under a tungsten illumination of 1 kW/m2 at 2800 K (2527 °C);

2. High energy storage capacitors, as follows: N.B.: SEE ALSO 3A201.a.

2. a.

Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 250 J/kg; and

3. A total energy equal to or more than 25 kJ;

Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 50 J/kg;

3. A total energy equal to or more than 100 J; and

4. A charge/discharge cycle life equal to or more than 10000;

3. Superconductive electromagnets and solenoids specially designed to be fully charged or discharged in less than one second, having all of the following: N.B.: SEE ALSO 3A201.b. Note: 3A001.e.3. does not control superconductive electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment.

3. a.

Energy delivered during the discharge exceeding 10 kJ in the first second;

Inner diameter of the current carrying windings of more than 250 mm; and

Rated for a magnetic induction of more than 8 T or overall current density in the winding of more than 300 A/mm2;

Rotary input type shaft absolute position encoders having any of the following:

1. A resolution of better than 1 part in 265000 (18 bit resolution) of full scale; or

2. An accuracy better than ± 2,5 seconds of arc.

Recording equipment, as follows, and specially designed test tape therefor:

1. Analogue instrumentation magnetic tape recorders, including those permitting the recording of digital signals (e.g. using a high density digital recording (HDDR) module), having any of the following: Note: Analogue magnetic tape recorders specially designed for civilian video purposes are not considered to be instrumentation tape recorders.

1. a.

A bandwidth exceeding 4 MHz per electronic channel or track;

A bandwidth exceeding 2 MHz per electronic channel or track and having more than 42 tracks; or

A time displacement (base) error, measured in accordance with applicable IRIG or EIA documents, of less than ± 0,1 μs;

2. Digital video magnetic tape recorders having a maximum digital interface transfer rate exceeding 360 Mbits/s; Note: 3A002.a.2. does not control digital video magnetic tape recorders specially designed for television recording using a signal format, which may include a compressed signal format, standardised or recommended by the ITU, the IEC, the SMPTE, the EBU, the ETSI or the IEEE for civil television applications.

3. Digital instrumentation magnetic tape data recorders employing helical scan techniques or fixed head techniques, having any of the following: Note: 3A002.a.3. does not control analogue magnetic tape recorders equipped with HDDR conversion electronics and configured to record only digital data.

3. a.

A maximum digital interface transfer rate exceeding 175 Mbits/s; or

Being space qualified;

4. Equipment, having a maximum digital interface transfer rate exceeding 175 Mbits/s, designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders;

5. Technical Note:

Waveform digitisers and transient recorders having all of the following: For those instruments with a parallel bus architecture, the continuous throughput rate is the highest word rate multiplied by the number of bits in a word. Continuous throughput is the fastest data rate the instrument can output to mass storage without the loss of any information whilst sustaining the sampling rate and analogue-to-digital conversion.

5. a.

Digitising rate equal to or more than 200 million samples per second and a resolution of 10 bit or more; and

A continuous throughput of 2 Gbit/s or more;

6. Digital instrumentation data recorders, using magnetic disk storage technique, having all of the following:

6. a.

Digitising rate equal to or more than 100 million samples per second and a resolution of 8 bit or more; and

A continuous throughput of 1 Gbit/s or more;

Frequency synthesiserelectronic assemblies having a frequency switching time from one selected frequency to another of less than 1 ms;

Radio frequency signal analysers, as follows:

1. Signal analyserscapable of analysing frequencies exceeding 31,8 GHz but less than 37,5 GHz or exceeding 43,5 GHz;

2. Dynamic signal analysers having areal-time bandwidth exceeding 500 kHz; Note: 3A002.c.2. does not control those dynamic signal analysers using only constant percentage bandwidth filters (also known as octave or fractional octave filters).

Frequency synthesised signal generators producing output frequencies, the accuracy and short term and long term stability of which are controlled, derived from or disciplined by the internal master frequency, and having any of the following: Note: 3A002.d. does not control equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result.

1. A maximum synthesised frequency exceeding 31,8 GHz but not exceeding 43,5 GHz and rated to generate a pulse duration of less than 100 ns;

2. A maximum synthesised frequency exceeding 43,5 GHz;

3. A frequency switching time from one selected frequency to another of less than 1 ms; or

4. Technical Note:

A single sideband (SSB) phase noise better than – (126 + 20 log10F – 20 log10f) in dBc/Hz, where F is the off-set from the operating frequency in Hz and f is the operating frequency in MHz; For the purposes of 3A002.d.1., pulse duration is defined as the time interval between the leading edge of the pulse achieving 90 % of the peak and the trailing edge of the pulse achieving 10 % of the peak.

Network analysers with a maximum operating frequency exceeding 43,5 GHz;

Microwave test receivers having all of the following:

1. A maximum operating frequency exceeding 43,5 GHz; and

2. Being capable of measuring amplitude and phase simultaneously;

Atomic frequency standards having any of the following: Note: 3A002.g.1. does not control non-space qualified rubidium standards.

1. Long-term stability (aging) less (better) than 1 × 10– 11/month; or

2. Being space qualified.

Analog to digital converters, usable in missiles, designed to meet military specifications for ruggedized equipment;

Accelerators capable of delivering electromagnetic radiation produced by bremsstrahlung from accelerated electrons of 2 MeV or greater, and systems containing those accelerators. Note: 3A101.b. above does not specify equipment specially designed for medical purposes.

Capacitors having either of the following sets of characteristics:

1. a.

Voltage rating greater than 1,4 kV;

Energy storage greater than 10 J;

Capacitance greater than 0,5 μF; and

Series inductance less than 50 nH; or

2. a.

Voltage rating greater than 750 V;

Capacitance greater than 0,25 μF; and

Series inductance less than 10 nH;

Superconducting solenoidal electromagnets having all of the following characteristics: Note: 3A201.b. does not control magnets specially designed for and exported as parts of medical nuclear magnetic resonance (NMR) imaging systems. The phrase as part of does not necessarily mean physical part in the same shipment; separate shipments from different sources are allowed, provided the related export documents clearly specify that the shipments are dispatched as part of the imaging systems.

1. Capable of creating magnetic fields greater than 2 T;

2. A ratio of length to inner diameter greater than 2;

3. Inner diameter greater than 300 mm; and

4. Magnetic field uniform to better than 1 % over the central 50 % of the inner volume;

c. Technical Notes:

Flash X ray generators or pulsed electron accelerators having either of the following sets of characteristics: Note: 3A201.c. does not control accelerators that are component parts of devices designed for purposes other than electron beam or X-ray radiation (electron microscopy, for example) nor those designed for medical purposes.

1. a.

An accelerator peak electron energy of 500 KeV or greater but less than 25 MeV; and

With a figure of merit (K) of 0,25 or greater; or

2. a.

An accelerator peak electron energy of 25 MeV or greater; and

A peak power greater than 50 MW.

c. Technical Notes:

1. The figure of merit K is defined as: K = 1,7 × 10^3V^2,65Q V is the peak electron energy in million electron volts. If the accelerator beam pulse duration is less than or equal to 1 μs, then Q is the total accelerated charge in Coulombs. If the accelerator beam pulse duration is greater than 1 μs, then Q is the maximum accelerated charge in 1 μs. Q equals the integral of i with respect to t, over the lesser of 1 μs or the time duration of the beam pulse (Q = ∫ idt), where i is beam current in amperes and t is time in seconds.

2. Peak power = (peak potential in volts) × (peak beam current in amperes).

3. In machines based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of 1 μs or the duration of the bunched beam packet resulting from one microwave modulator pulse.

4. In machines based on microwave accelerating cavities, the peak beam current is the average current in the time duration of a bunched beam packet.

Multiphase output capable of providing a power of 40 W or greater;

Capable of operating in the frequency range between 600 and 2000 Hz;

Total harmonic distortion better (less) than 10 %; and

Frequency control better (less) than 0,1 %.

3ASystems, Equipment and Components Technical Note: a.

Capable of continuously producing, over a time period of 8 hours, 100 V or greater with current output of 500 A or greater; and

Current or voltage stability better than 0,1 % over a time period of 8 hours.

Capable of continuously producing, over a time period of 8 hours, 20 kV or greater with current output of 1 A or greater; and

Current or voltage stability better than 0,1 % over a time period of 8 hours.

Cold cathode tubes, whether gas filled or not, operating similarly to a spark gap, having all of the following characteristics: Note: 3A228 includes gas krytron tubes and vacuum sprytron tubes.

1. Containing three or more electrodes;

2. Anode peak voltage rating of 2,5 kV or more;

3. Anode peak current rating of 100 A or more 100 A; and

4. Anode delay time of 10 μs or less;

Triggered spark-gaps having both of the following characteristics:

1. An anode delay time of 15 μs or less; and

2. Rated for a peak current of 500 A or more;

Modules or assemblies with a fast switching function having all of the following characteristics:

1. Anode peak voltage rating greater than 2 kV;

2. Anode peak current rating of 500 A or more; and

3. Turn on time of 1 μs or less.

Explosive detonator firing sets designed to drive multiple controlled detonators specified in 3A232;

b. Technical Note:

Modular electrical pulse generators (pulsers) having all of the following characteristics: Note: 3A229.b. includes xenon flash lamp drivers. In 3A229.b.5. rise time is defined as the time interval from 10 % to 90 % current amplitude when driving a resistive load.

1. Designed for portable, mobile, or ruggedized-use;

2. Enclosed in a dust tight enclosure;

3. Capable of delivering their energy in less than 15 μs;

4. Having an output greater than 100 A;

5. Having a rise time of less than 10 μs into loads of less than 40 ohms;

6. No dimension greater than 254 mm;

7. Weight less than 25 kg; and

8. Specified for use over an extended temperature range 223 K (– 50 °C) to 373 K (100 °C) or specified as suitable for aerospace applications.

Output voltage greater than 6 V into a resistive load of less than 55 ohms, and

Pulse transition time less than 500 ps.

3ASystems, Equipment and Components Technical Note: Technical Note: a.

Designed for operation without an external vacuum system; and

Utilizing electrostatic acceleration to induce a tritium-deuterium nuclear reaction.

Electrically driven explosive detonators, as follows:

1. Exploding bridge (EB);

2. Exploding bridge wire (EBW);

3. Slapper;

4. Exploding foil initiators (EFI);

Arrangements using single or multiple detonators designed to nearly simultaneously initiate an explosive surface over greater than 5000 mm2 from a single firing signal with an initiation timing spread over the surface of less than 2,5 μs.

3ASystems, Equipment and Components Technical Note: Technical Note: Technical Note: a.

Inductively coupled plasma mass spectrometers (ICP/MS);

Glow discharge mass spectrometers (GDMS);

Thermal ionization mass spectrometers (TIMS);

Electron bombardment mass spectrometers which have a source chamber constructed from, lined with or plated with materials resistant to UF6;

Molecular beam mass spectrometers having either of the following characteristics:

1. A source chamber constructed from, lined with or plated with stainless steel or molybdenum and equipped with a cold trap capable of cooling to 193 K (– 80 °C) or less; or

2. A source chamber constructed from, lined with or plated with materials resistant to UF6;

Mass spectrometers equipped with a microfluorination ion source designed for actinides or actinide fluorides.

3BTest, Inspection and Production Equipment

3B001Equipment for the manufacturing of semiconductor devices or materials, as follows, and specially designed components and accessories therefor: 3B002Stored programme controlled test equipment, specially designed for testing finished or unfinished semiconductor devices, as follows, and specially designed components and accessories therefor:

Equipment designed for epitaxial growth, as follows:

1. Equipment capable of producing any of the following:

1. a.

A silicon layer with a thickness uniform to less than ± 2,5 % across a distance of 200 mm or more; or

A layer of any material other than silicon with a thickness uniform to less than ± 2,5 % across a distance of 75 mm or more;

2. Metal organic chemical vapour deposition (MOCVD) reactors specially designed for compound semiconductor crystal growth by the chemical reaction between materials specified in 3C003 or 3C004;

3. Molecular beam epitaxial growth equipment using gas or solid sources;

Equipment designed for ion implantation, having any of the following:

1. A beam energy (accelerating voltage) exceeding 1 MeV;

2. Being specially designed and optimised to operate at a beam energy (accelerating voltage) of less than 2 keV;

3. Direct write capability; or

4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material substrate;

Anisotropic plasma dry etching equipment, as follows:

1. Equipment with cassette-to-cassette operation and load-locks, and having any of the following:

1. a.

Designed or optimised to produce critical dimensions of 0,3 μm or less with ± 5 % 3 sigma precision; or

Designed for generating less than 0,04 particles/cm2 with a measurable particle size greater than 0,1 μm in diameter;

2. Equipment specially designed for equipment specified in 3B001.e. and having any of the following:

2. a.

Designed or optimised to produce critical dimensions of 0,3 μm or less with ± 5 % 3 sigma precision; or

Designed for generating less than 0,04 particles/cm2 with a measurable particle size greater than 0,12 μm in diameter;

Plasma enhanced CVD equipment, as follows:

1. Equipment with cassette-to-cassette operation and load-locks, and designed according to the manufacturer's specifications or optimised for use in the production of semiconductor devices with critical dimensions of 180 nm or less;

2. Equipment specially designed for equipment controlled by 3B001.e. and designed according to the manufacturer's specifications or optimised for use in the production of semiconductor devices with critical dimensions of 180 nm or less;

Automatic loading multi-chamber central wafer handling systems, having all of the following: Note: 3B001.e. does not control automatic robotic wafer handling systems not designed to operate in a vacuum environment.

1. Interfaces for wafer input and output, to which more than two pieces of semiconductor processing equipment are to be connected; and

2. Designed to form an integrated system in a vacuum environment for sequential multiple wafer processing;

Lithography equipment, as follows:

1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods, having any of the following:

1. a.

A light source wavelength shorter than 350 nm; or

b. Technical Note:

Capable of producing a pattern with aminimum resolvable feature size of 0,35 μm or less; The minimum resolvable feature size is calculated by the following formula: MRF = an exposure light source wavelength in μm × K factornumerical aperture where the K factor = 0,7 MRF = minimum resolvable feature size

2. Equipment specially designed for mask making or semiconductor device processing using deflected focussed electron beam, ion beam or laser beam, having any of the following:

2. a.

A spot size smaller than 0,2 μm;

Being capable of producing a pattern with a feature size of less than 1 μm; or

An overlay accuracy of better than ± 0,20 μm (3 sigma);

Masks and reticles designed for integrated circuits specified in 3A001;

Multi-layer masks with a phase shift layer. Note: 3B001.h. does not control multi-layer masks with a phase shift layer designed for the fabrication of memory devices not controlled by 3A001.

For testing S-parameters of transistor devices at frequencies exceeding 31,8 GHz;

b. Technical Note:

For testing integrated circuits capable of performing functional (truth table) testing at a pattern rate of more than 667 MHz; Note: 3B002.b. does not control test equipment specially designed for testing: For the purpose of this entry, pattern rate is defined as the maximum frequency of digital operation of a tester. It is therefore equivalent to the highest data rate that a tester can provide in non-multiplexed mode. It is also referred to as test speed, maximum digital frequency or maximum digital speed.

1. Electronic assemblies or a class of electronic assemblies for home or entertainment applications;

2. Uncontrolled electronic components, electronic assemblies or integrated circuits;

3. Memories.

For testing microwave integrated circuits specified in 3A001.b.2.

3CMaterials 3C001Hetero-epitaxial materials consisting of a substrate having stacked epitaxially grown multiple layers of any of the following: 3C002Resist materials, as follows, and substrates coated with controlled resists: 3C003Organo-inorganic compounds, as follows: Note: 3C003 only controls compounds whose metallic, partly metallic or non-metallic element is directly linked to carbon in the organic part of the molecule. 3C004Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note: 3C004 does not control hydrides containing 20 % molar or more of inert gases or hydrogen.

3CMaterials a.

Silicon;

Germanium;

Silicon carbide; or

d. Technical Note:

III/V compounds of gallium or indium. III/V compounds are polycrystalline or binary or complex monocrystalline products consisting of elements of groups IIIA and VA of Mendeleyev's periodic classification table (e.g., gallium arsenide, gallium-aluminium arsenide, indium phosphide).

Positive resists designed for semiconductor lithography specially adjusted (optimised) for use at wavelengths below 350 nm;

All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;

All resists designed for use with X-rays, with a sensitivity of 2,5 mJ/mm2 or better;

d. Technical Note:

All resists optimised for surface imaging technologies, including silylated resists. Silylation techniques are defined as processes incorporating oxidation of the resist surface to enhance performance for both wet and dry developing.

Organo-metallic compounds of aluminium, gallium or indium having a purity (metal basis) better than 99,999 %;

Organo-arsenic, organo-antimony and organo-phosphorus compounds having a purity (inorganic element basis) better than 99,999 %.

3DSoftware Technical Note:

3D001Software specially designed for the development or production of equipment specified in 3A001.b. to 3A002.g. or 3B. 3D002Software specially designed for the use of any of the following: 3D003Physics-based simulation software specially designed for the development of lithographic, etching or deposition processes for translating masking patterns into specific topographical patterns in conductors, dielectrics or semiconductor materials. Physics-based in 3.D.3. means using computations to determine a sequence of physical cause and effect events based on physical properties (e.g., temperature, pressure, diffusion constants and semiconductor materials properties). Note: Libraries, design attributes or associated data for the design of semiconductor devices or integrated circuits are considered as technology. 3D004Software specially designed for the development of the equipment specified in 3A003. 3D101Software specially designed or modified for the use of equipment specified in 3A101.b.

3DSoftware a.

Equipment specified in 3B001.a. to f.; or

Equipment specified in 3B002.

3ETechnology Technical Note:

3E001Technology according to the General Technology Note for the development or production of equipment or materials specified in 3A, 3B or 3C; Note 1: 3E001 does not control technology for the production of equipment or components controlled by 3A003. Note 2: 3E001 does not control technology for the development or production of integrated circuits specified in 3A001.a.3. to 3A001.a.12., having all of the following: The term multi-layer structures does not include devices incorporating a maximum of three metal layers and three polysilicon layers. 3E002Technology according to the General Technology Note other than that specified in 3E001 for the development or production of microprocessor microcircuits, microcomputer microcircuits and microcontroller microcircuits having a composite theoretical performance (CTP) of 530 million theoretical operations per second (Mtops) or more and an arithmetic logic unit with an access width of 32 bits or more. Note: Decontrol note 2 to 3E001 also applies to 3E002. 3E003Other technology for the development or production of: 3E101Technology according to the General Technology Note for the use of equipment or software specified in 3A001.a.1. or 2., 3A101 or 3D101. 3E102Technology according to the General Technology Note for the development of software specified in 3D101. 3E201Technology according to the General Technology Note for the use of equipment specified in 3A001.e.2., 3A001.e.3., 3A201, 3A225 to 3A233.

3ETechnology

1. Using technology of 0,5 μm or more, and

2. Not incorporating multi-layer structures.

3ETechnology Technical Note: a.

Vacuum microelectronic devices;

Hetero-structure semiconductor devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices; Note: 3E003.b. does not control technology for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.

Superconductive electronic devices;

Substrates of films of diamond for electronic components;

Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;

Substrates of silicon carbide for electronic components;

Electronic vacuum tubes operating at frequencies of 31,8 GHz or higher.

CATEGORY 4 COMPUTERS

Note 1: Computers, related equipment and software performing telecommunications or local area network functions must also be evaluated against the performance characteristics of Category 5, Part 1 (Telecommunications). Note 2: Control units which directly interconnect the buses or channels of central processing units, main storage or disk controllers are not regarded as telecommunications equipment described in Category 5, Part 1 (Telecommunications). N.B.: For the control status of software specially designed for packet switching, see 5D001. Note 3: Computers, related equipment and software performing cryptographic, cryptanalytic, certifiable multi-level security or certifiable user isolation functions, or which limit electromagnetic compatibility (EMC), must also be evaluated against the performance characteristics in Category 5, Part 2 (Information Security).

4ASystems, Equipment and Components

4A001Electronic computers and related equipment, as follows, and electronic assemblies and specially designed components therefor: N.B.: SEE ALSO 4A101. 4A003Digital computers, electronic assemblies, and related equipment therefor, as follows, and specially designed components therefor: Note 1: 4A003 includes the following: Note 2: The control status of the digital computers and related equipment described in 4A003 is determined by the control status of other equipment or systems provided: 4A004Computers, as follows, and specially designed related equipment, electronic assemblies and components therefor: 4A101Analogue computers, digital computers or digital differential analysers, other than those specified in 4A001.a.1., which are ruggedized and designed or modified for use in space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. 4A102Hybrid computers specially designed for modelling, simulation or design integration of space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. Note: This control only applies when the equipment is supplied with software specified in 7D103 or 9D103.

Specially designed to have any of the following characteristics:

1. Rated for operation at an ambient temperature below 228 K (– 45 °C) or above 358 K (85 °C); Note: 4A001.a.1. does not apply to computers specially designed for civil automobile or railway train applications.

2. Radiation hardened to exceed any of the following specifications: a. Total Dose 5 × 103 Gy (silicon); b. Dose Rate Upset 5 × 106 Gy (silicon)/s; or c. Single Event Upset 1 × 10–7 Error/bit/day;

Having characteristics or performing functions exceeding the limits in Category 5, Part 2 (Information Security). Note: 4A001.b. does not control electronic computers and related equipment when accompanying their user for the user's personal use.

Vector processors;

Array processors;

Digital signal processors;

Logic processors;

Equipment designed for image enhancement;

Equipment designed for signal processing.

The digital computers or related equipment are essential for the operation of the other equipment or systems;

The digital computers or related equipment are not a principal element of the other equipment or systems; and N.B. 1: The control status of signal processing or image enhancement equipment specially designed for other equipment with functions limited to those required for the other equipment is determined by the control status of the other equipment even if it exceeds the principal element criterion. N.B. 2: For the control status of digital computers or related equipment for telecommunications equipment, see Category 5, Part 1 (Telecommunications).

The technology for the digital computers and related equipment is determined by 4E.

Designed or modified for fault tolerance; Note: For the purposes of 4A003.a., digital computers and related equipment are not considered to be designed or modified for fault tolerance if they utilise any of the following:

1. Error detection or correction algorithms in main storage;

2. The interconnection of two digital computers so that, if the active central processing unit fails, an idling but mirroring central processing unit can continue the system's functioning;

3. The interconnection of two central processing units by data channels or by use of shared storage to permit one central processing unit to perform other work until the second central processing unit fails, at which time the first central processing unit takes over in order to continue the system's functioning; or

4. The synchronisation of two central processing units by software so that one central processing unit recognises when the other central processing unit fails and recovers tasks from the failing unit.

Digital computers having a composite theoretical performance (CTP) exceeding 190000 million theoretical operations per second (Mtops);

Electronic assemblies specially designed or modified for enhancing performance by aggregation of computing elements (CEs) so that the CTP of the aggregation exceeds the limit in 4A003.b.; Note 1: 4A003.c. applies only to electronic assemblies and programmable interconnections not exceeding the limit in 4A003.b. when shipped as unintegrated electronic assemblies. It does not apply to electronic assemblies inherently limited by nature of their design for use as related equipment specified in 4A003.d. or 4A003.e. Note 2: 4A003.c. does not control electronic assemblies specially designed for a product or family of products whose maximum configuration does not exceed the limit of 4A003.b.

Not used;

Equipment performing analogue-to-digital conversions exceeding the limits in 3A001.a.5.;

Not used;

Equipment specially designed to provide external interconnection of digital computers or associated equipment which allows communications at data rates exceeding 1.25 Gbyte/s. Note: 4A003.g. does not control internal interconnection equipment (e.g. backplanes, buses), passive interconnection equipment, network access controllers or communications channel controllers.

Systolic array computers;

Neural computers;

Optical computers.

4BTest, Inspection and Production Equipment

None.

4CMaterials None.

4DSoftware Note: The control status of software for the development, production, or use of equipment described in other Categories is dealt with in the appropriate Category. The control status of software for equipment described in this Category is dealt with herein. 4D001 4D002Software specially designed or modified to support technology specified in 4E. 4D003Specific software, as follows:

4DSoftware a.

Software specially designed or modified for the development, production or use of equipment or software specified in 4A001 to 4A004, or 4D.

Software, other than that specified in 4D001.a., specially designed or modified for the development or production of:

1. Digital computers having a composite theoretical performance (CTP) exceeding 28000 million theoretical operations per second (Mtops ); or

2. Electronic assemblies specially designed or modified for enhancing performance by aggregation of computing elements (CEs) so that the CTP of the aggregation exceeds the limit in 4D001.b.1.

Operating system software, software development tools and compilers specially designed for multi-data-stream processing equipment, in source code;

Not used;

Software having characteristics or performing functions exceeding the limits in Category 5, Part 2 (Information Security); Note: 4D003.c. does not control software when accompanying its user for the user's personal use.

4ETechnology 4E001

4ETechnology a.

Technology according to the General Technology Note, for the development, production or use of equipment or software specified in 4A or 4D.

Technology, other than that specified in 4E001.a., specially designed or modified for the development or production of:

1. Digital computers having a composite theoretical performance (CTP) exceeding 28000 million theoretical operations per second (Mtops ); or

2. Electronic assemblies specially designed or modified for enhancing performance by aggregation of computing elements (CEs) so that the CTP of the aggregation exceeds the limit in 4E001.b.1.

Technical note on Composite Theoretical Performance (CTP) Abbreviations used in this Technical Note

CE computing element (typically an arithmetic logical unit) FP floating point XP fixed point t execution time XOR exclusive OR CPU central processing unit TP theoretical performance (of a single CE) CTP composite theoretical performance (multiple CEs) R effective calculating rate WL word length L word length adjustment * multiply Execution time t is expressed in microseconds, TP and CTP are expressed in millions of theoretical operations per second (Mtops) and WL is expressed in bits.

Outline of CTP calculation method

CTP is a measure of computational performance given in Mtops. In calculating the CTP of an aggregation of CEs the following three steps are required: Details for these steps are given in the following sections. Note 1: For aggregations of multiple CEs which have both shared and unshared memory subsystems, the calculation of CTP is completed hierarchically, in two steps: first, aggregate the groups of CEs sharing memory; second, calculate the CTP of the groups using the calculation method for multiple CEs not sharing memory. Note 2:CEs that are limited to input/output and peripheral functions (e.g., disk drive, communication and video display controllers) are not aggregated into the CTP calculation.

1. Calculate the effective calculating rate R for each CE;

2. Apply the word length adjustment (L) to the effective calculating rate (R), resulting in a Theoretical Performance (TP) for each CE;

3. If there is more than one CE, combine the TPs, resulting in a CTP for the aggregation.

TECHNICAL NOTE ON CTP

The following table shows the method of calculating the Effective Calculating Rate R for each CE: Step 1: The effective calculating rate R For CEs Implementing: Note: Every CE must be evaluated independently. Effective calculating Rate, R XP only Rxp = 13 × txp add if no add is implemented use: Rxp = 1txp mult If neither add nor multiply is implemented use the fastest available arithmetic operation as follows: Rxp = 13 × txp See Notes X & Z FP only Rfp = max 1tfp add, 1tfp mult See Notes X & Y Both FP and XP (R) Calculate both Rxp, Rfp For simple logic processors not implementing any of the specified arithmetic operations. R = 13 × tlog Where tlog is the execute time of the XOR, or for logic hardware not implementing the XOR, the fastest simple logic operation. See Notes X & Z For special logic processors not using any of the specified arithmetic or logic operations. R = R' × WL/64 Where R' is the number of results per second, WL is the number of bits upon which the logic operation occurs, and 64 is a factor to normalize to a 64 bit operation. Note W: For a pipelined CE capable of executing up to one arithmetic or logic operation every clock cycle after the pipeline is full, a pipelined rate can be established. The effective calculating rate (R) for such a CE is the faster of the pipelined rate or non-pipelined execution rate. Note X: For a CE which performs multiple operations of a specific type in a single cycle (e.g., two additions per cycle or two identical logic operations per cycle), the execution time t is given by: t = cycle timethe number of identical operations per machine cycle CEs which perform different types of arithmetic or logic operations in a single machine cycle are to be treated as multiple separate CEs performing simultaneously (e.g., a CE performing an addition and a multiplication in one cycle is to be treated as two CEs, the first performing an addition in one cycle and the second performing a multiplication in one cycle). If a single CE has both scalar function and vector function, use the shorter execution time value. Note Y: For the CE that does not implement FP add or FP multiply, but that performs FP divide: Rfp = ltfp divide If the CE implements FP reciprocal but not FP add, FP multiply or FP divide, then Rfp = ltfp reciprocal If none of the specified instructions is implemented, the effective FP rate is 0. Note Z: In simple logic operations, a single instruction performs a single logic manipulation of no more than two operands of given lengths. In complex logic operations, a single instruction performs multiple logic manipulations to produce one or more results from two or more operands. Rates should be calculated for all supported operand lengths considering both pipelined operations (if supported), and non-pipelined operations using the fastest executing instruction for each operand length based on: In each case above, use the shortest execution time certified by the manufacturer. Step 2: TP for each supported operand length WL Adjust the effective rate R (or R') by the word length adjustment L as follows: Note: The word length WL used in these calculations is the operand length in bits. (If an operation uses operands of different lengths, select the largest word length.) The combination of a mantissa ALU and an exponent ALU of a floating point processor or unit is considered to be one CE with a Word Length (WL) equal to the number of bits in the data representation (typically 32 or 64) for purposes of the CTP calculation. This adjustment is not applied to specialized logic processors which do not use XOR instructions. In this case TP = R. Select the maximum resulting value of TP for: Step 3: CTP for aggregations of CEs, including CPUs For a CPU with a single CE, CTP = TP (for CEs performing both fixed and floating point operations TP = max (TPfp, TPxp) CTP for aggregations of multiple CEs operating simultaneously is calculated as follows: Note 1: For aggregations that do not allow all of the CEs to run simultaneously, the possible combination of CEs that provides the largest CTP should be used. The TP of each contributing CE is to be calculated at its maximum value theoretically possible before the CTP of the combination is derived. N.B. To determine the possible combinations of simultaneously operating CEs, generate an instruction sequence that initiates operations in multiple CEs, beginning with the slowest CE (the one needing the largest number of cycles to complete its operation) and ending with the fastest CE. At each cycle of the sequence, the combination of CEs that are in operation during that cycle is a possible combination. The instruction sequence must take into account all hardware and/or architectural constraints on overlapping operations. Note 2: A single integrated circuit chip or board assembly may contain multiple CEs. Note 3: Simultaneous operations are assumed to exist when the computer manufacturer claims concurrent, parallel or simultaneous operation or execution in a manual or brochure for the computer. Note 4:CTP values are not to be aggregated for CE combinations (inter) connected by Local Area Networks, Wide Area Networks, I/O shared connections/devices, I/O controllers and any communication interconnection implemented by software. Note 5:CTP values must be aggregated for multiple CEs specially designed to enhance performance by aggregation, operating simultaneously and sharing memory — or multiple memory/CE— combinations operating simultaneously utilising specially designed hardware. This aggregation does not apply to electronic assemblies described by 4A003.c. CTP = TP1 + C2 × TP2 + … + Cn × TPn, where the TPs are ordered by value, with TP1 being the highest, TP2 being the second highest, …, and TPn being the lowest. Ci is a coefficient determined by the strength of the interconnection between CEs, as follows: For multiple CEs operating simultaneously and sharing memory: Note 1: When the CTP calculated by the above method does not exceed 194 Mtops, the following formula may be used to calculate Ci: Ci = 0,75m(i = 2,…,n) where m = the number of CEs or groups of CEs sharing access. provided: N.B. This does not apply to items controlled under Category 3. Note 2:CEs share memory if they access a common segment of solid state memory. This memory may include cache memory, main memory or other internal memory. Peripheral memory devices such as disk drives, tape drives or RAM disks are not included. For Multiple CEs or groups of CEs not sharing memory, interconnected by one or more data channels: The value of Ci is based on the number of CEs, not the number of nodes. where ki min (Si/Kr, 1), and Kr normalising factor of 20 MByte/s. Si sum of the maximum data rates (in units of MByte/s) for all data channels connected to the ithCE or group of CEs sharing memory. When calculating a Ci for a group of CEs, the number of the first CE in a group determines the proper limit for Ci. For example, in an aggregation of groups consisting of 3 CEs each, the 22nd group will contain CE64, CE65 and CE66. The proper limit for Ci for this group is 0,60. Aggregation (of CEs or groups of CEs) should be from the fastest-to-slowest; i.e.: in the case of TPi = TPi + 1, from the largest to smallest; i.e.: Note: The ki factor is not to be applied to CEs 2 to 12 if the TPi of the CE or group of CEs is more than 50 Mtops; i.e., Ci for CEs 2 to 12 is 0,75.

1. Pipelined or register-to-register operations. Exclude extraordinarily short execution times generated for operations on a predetermined operand or operands (for example, multiplication by 0 or 1). If no register-to-register operations are implemented, continue with (2).

2. The faster of register-to-memory or memory-to-register operations; if these also do not exist, then continue with (3).

3. Memory-to-memory.

TP = R × L, where L = (1/3 + WL/96)

Each XP-only CE (Rxp);

Each FP-only CE (Rfp);

Each combined FP and XP CE (R);

Each simple logic processor not implementing any of the specified arithmetic operations; and

Each special logic processor not using any of the specified arithmetic or logic operations.

C2 = C3 = C4 = … = Cn = 0,75

1. The TPi of each CE or group of CEs does not exceed 30 Mtops;

2. The CEs or groups of CEs share access to main memory (excluding cache memory) over a single channel; and

3. Only one CE or group of CEs can have use of the channel at any given time.

Ci = 0,75 × ki (i = 2, …, 32) (see Note below)

= 0,60 × ki (i = 33, …, 64)

= 0,45 × ki (i = 65, …, 256)

= 0,30 × ki (i > 256)

TP1 ≥ TP2 ≥ … ≥ TPn, and

Ci ≥ Ci + 1

CATEGORY 5 TELECOMMUNICATIONS AND INFORMATION SECURITY

PART 1 TELECOMMUNICATIONS

Note 1: The control status of components, lasers, test and production equipment and software therefor which are specially designed for telecommunications equipment or systems is determined in Category 5, Part 1. Note 2:Digital computers, related equipment or software, when essential for the operation and support of telecommunications equipment described in this Category, are regarded as specially designed components, provided they are the standard models customarily supplied by the manufacturer. This includes operation, administration, maintenance, engineering or billing computer systems.

5A1Systems, Equipment and Components Technical Note:

5A001 5A101Telemetering and telecontrol equipment, including ground equipment, designed or modified for missiles. In 5A101 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. Note: 5A101 does not control:

5A1Systems, Equipment and Components a.

Any type of telecommunications equipment having any of the following characteristics, functions or features: Note: 5A001.a.2. and 5A001.a.3. do not control equipment designed or modified for use on board satellites.

1. Specially designed to withstand transitory electronic effects or electromagnetic pulse effects, both arising from a nuclear explosion;

2. Specially hardened to withstand gamma, neutron or ion radiation; or

3. Specially designed to operate outside the temperature range from 218 K (– 55 °C) to 397 K (124 °C). Note: 5A001.a.3. applies only to electronic equipment.

Telecommunication transmission equipment and systems, and specially designed components and accessories therefor, having any of the following characteristics, functions or features:

1. Being underwater communications systems having any of the following characteristics:

1. a.

An acoustic carrier frequency outside the range from 20 kHz to 60 kHz;

Using an electromagnetic carrier frequency below 30 kHz; or

Using electronic beam steering techniques;

2. Being radio equipment operating in the 1,5 MHz to 87,5 MHz band and having any of the following characteristics:

2. a.

Incorporating adaptive techniques providing more than 15 dB suppression of an interfering signal; or

Having all of the following:

1. Automatically predicting and selecting frequencies and total digital transfer rates per channel to optimise the transmission; and

2. Incorporating a linear power amplifier configuration having a capability to support multiple signals simultaneously at an output power of 1 kW or more in the frequency range of 1,5 MHz or more but less than 30 MHz, or 250 W or more in the frequency range of 30 MHz or more but not exceeding 87,5 MHz, over an instantaneous bandwidth of one octave or more and with an output harmonic and distortion content of better than – 80 dB;

3. Being radio equipment employing spread spectrum techniques, including frequency hopping techniques, having any of the following characteristics: Note: 5A001.b.3. does not control equipment designed to operate at an output power of 1,0 Watt or less.

3. a.

User programmable spreading codes; or

A total transmitted bandwidth which is 100 or more times the bandwidth of any one information channel and in excess of 50 kHz; Note: 5A001.b.3.b. does not control radio equipment specially designed for use with civil cellular radio-communications systems.

4. Being radio equipment employing time-modulated ultra-wideband techniques, having user programmable channelising or scrambling codes;

5. Being digitally controlled radio receivers having all of the following:

5. a.

More than 1000 channels;

A frequency switching time of less than 1 ms;

Automatic searching or scanning of a part of the electromagnetic spectrum; and

Identification of the received signals or the type of transmitter; or Note: 5A001.b.5. does not control radio equipment specially designed for use with civil cellular radio-communications systems.

6. Technical Note:

Employing functions of digital signal processing to provide voice coding output at rates of less than 2400 bit/s. For variable rate voice coding, 5A001.b.6. applies to the voice coding output of continuous speech.

Optical fibre communication cables, optical fibres and accessories, as follows:

1. Technical Note:

Optical fibres of more than 500 m in length, and specified by the manufacturer as being capable of withstanding a proof test tensile stress of 2 × 109 N/m2 or more; Proof Test: on-line or off-line production screen testing that dynamically applies a prescribed tensile stress over a 0,5 to 3 m length of fibre at a running rate of 2 to 5 m/s while passing between capstans approximately 150 mm in diameter. The ambient temperature is a nominal 293 K (20 °C) and relative humidity 40 %. Equivalent national standards may be used for executing the proof test.

2. Optical fibre cables and accessories designed for underwater use. Note: 5A001.c.2. does not control standard civil telecommunication cables and accessories. N.B. 1: For underwater umbilical cables, and connectors therefor, see 8A002.a.3. N.B. 2: For fibre-optic hull penetrators or connectors, see 8A002.c.

Electronically steerable phased array antennae operating above 31 GHz. Note: 5A001.d. does not control electronically steerable phased array antennae for landing systems with instruments meeting ICAO standards covering microwave landing systems (MLS).

5A1Systems, Equipment and Components Technical Note: a.

Equipment designed or modified for manned aircraft or satellites;

Ground based equipment designed or modified for terrestrial or marine applications;

Equipment designed for commercial, civil or Safety of Life (e.g. data integrity, flight safety) GNSS services;

5B1Test, Inspection and Production Equipment

5B001

Equipment and specially designed components or accessories therefor, specially designed for the development, production or use of equipment, functions or features specified in 5A001, 5B001, 5D001 or 5E001. Note: 5B001.a. does not control optical fibre characterisation equipment.

Equipment and specially designed components or accessories therefor, specially designed for the development of any of the following telecommunication transmission or switching equipment:

1. Technical Note:

Equipment employing digital techniques designed to operate at a total digital transfer rate exceeding 15 Gbit/s; For switching equipment the total digital transfer rate is measured at the highest speed port or line.

2. Equipment employing a laser and having any of the following:

2. a.

A transmission wavelength exceeding 1750 nm;

Performing optical amplification;

Employing coherent optical transmission or coherent optical detection techniques (also called optical heterodyne or homodyne techniques); or

Employing analogue techniques and having a bandwidth exceeding 2,5 GHz; Note: 5B001.b.2.d. does not control equipment specially designed for the development of commercial TV systems.

3. Equipment employing optical switching;

4. Radio equipment employing quadrature-amplitude-modulation (QAM) techniques above level 256; or

5. Equipment employing common channel signalling operating in non-associated mode of operation.

5C1Materials None

5D1Software 5D001 5D101Software specially designed or modified for the use of equipment specified in 5A101.

5D1Software a.

Software specially designed or modified for the development, production or use of equipment, functions or features specified by 5A001 or 5B001.

Software specially designed or modified to support technology specified in 5E001.

Specific software as follows:

1. Software specially designed or modified to provide characteristics, functions or features of equipment specified in 5A001 or 5B001;

2. Not used;

3. Software, other than in machine-executable form, specially designed for dynamic adaptive routing.

Software specially designed or modified for the development of any of the following telecommunication transmission or switching equipment:

1. Technical Note:

2. Equipment employing a laser and having any of the following:

2. a.

A transmission wavelength exceeding 1750 nm; or

Employing analogue techniques and having a bandwidth exceeding 2,5 GHz; Note: 5D001.d.2.b. does not control software specially designed or modified for the development of commercial TV systems.

3. Equipment employing optical switching; or

4. Radio equipment employing quadrature-amplitude-modulation (QAM) techniques above level 256.

5E1Technology

5E001 5E101Technology according to the General Technology Note for the development, production or use of equipment specified in 5A101.

Technology according to the General Technology Note for the development, production or use (excluding operation) of equipment, functions or features or software specified in 5A001, 5B001 or 5D001.

Specific technologies, as follows:

1. Requiredtechnology for the development or production of telecommunications equipment specially designed to be used on board satellites;

2. Technology for the development or use of laser communication techniques with the capability of automatically acquiring and tracking signals and maintaining communications through exoatmosphere or sub-surface (water) media;

3. Technology for the development of digital cellular radio base station receiving equipment whose reception capabilities that allow multi-band, multi-channel, multi-mode, multi-coding algorithm or multi-protocol operation can be modified by changes in software;

4. Technology for the development of spread spectrum techniques, including frequency hopping techniques.

Technology according to the General Technology Note for the development or production of any of the following telecommunication transmission or switching equipment, functions or features:

1. Technical Note:

2. Equipment employing a laser and having any of the following:

2. a.

A transmission wavelength exceeding 1750 nm;

Performing optical amplification using praseodymium-doped fluoride fibre amplifiers (PDFFA);

Employing coherent optical transmission or coherent optical detection techniques (also called optical heterodyne or homodyne techniques);

Employing wavelength division multiplexing techniques exceeding 8 optical carriers in a single optical window; or

Employing analogue techniques and having a bandwidth exceeding 2,5 GHz; Note: 5E001.c.2.e. does not control technology for the development or production of commercial TV systems.

3. Equipment employing optical switching;

4. Radio equipment having any of the following:

4. a.

Quadrature-amplitude-modulation (QAM) techniques above level 256; or

Operating at input or output frequencies exceeding 31,8 GHz; or Note: 5E001.c.4.b. does not control technology for the development or production of equipment designed or modified for operation in any frequency band which is allocated by the ITU for radio-communications services, but not for radio-determination.

5. Equipment employing common channel signalling operating in non-associated mode of operation.

PART 2 Note 3: Technical Note: INFORMATION SECURITY Cryptography Note

Note 1: The control status of information security equipment, software, systems, application specific electronic assemblies, modules, integrated circuits, components or functions is determined in Category 5, Part 2 even if they are components or electronic assemblies of other equipment. Note 2: Category 5 — Part 2 does not control products when accompanying their user for the user's personal use. 5A002 and 5D002 do not control goods that meet all of the following: In Category 5 — Part 2, parity bits are not included in the key length.

Note 3: INFORMATION SECURITY Cryptography Note

a.

Generally available to the public by being sold, without restriction, from stock at retail selling points by means of any of the following:

1. Over-the-counter transactions;

2. Mail order transactions;

3. Electronic transactions; or

4. Telephone call transactions;

b.

The cryptographic functionality cannot easily be changed by the user;

c.

Designed for installation by the user without further substantial support by the supplier; and

d.

When necessary, details of the goods are accessible and will be provided, upon request, to the competent authorities of the Member State in which the exporter is established in order to ascertain compliance with conditions described in paragraphs a. to c. above.

Note 3: Technical Note: INFORMATION SECURITY Cryptography Note

5A2Systems, Equipment and Components a.

5A002 Systems, equipment, application specific electronic assemblies, modules and integrated circuits for information security, as follows, and other specially designed components therefor: N.B.: For the control of global navigation satellite systems receiving equipment containing or employing decryption (i.e. GPS or GLONASS), see 7A005. Note: 5A002 does not control:

1. Technical Notes:

Designed or modified to use cryptography employing digital techniques performing any cryptographic function other than authentication or digital signature having any of the following: Note: 5A002.a.1. includes equipment designed or modified to use cryptography employing analogue principles when implemented with digital techniques.

1. Authentication and digital signature functions include their associated key management function.

2. Authentication includes all aspects of access control where there is no encryption of files or text except as directly related to the protection of passwords, Personal Identification Numbers (PINs) or similar data to prevent unauthorised access.

3. Cryptography does not include fixed data compression or coding techniques.

A symmetric algorithm employing a key length in excess of 56 bits; or

An asymmetric algorithm where the security of the algorithm is based on any of the following:

1. Factorisation of integers in excess of 512 bits (e.g., RSA);

2. Computation of discrete logarithms in a multiplicative group of a finite field of size greater than 512 bits (e.g., Diffie-Hellman over Z/pZ); or

3. Discrete logarithms in a group other than mentioned in 5A002.a.1.b.2. in excess of 112 bits (e.g., Diffie-Hellman over an elliptic curve);

2. Designed or modified to perform cryptanalytic functions;

3. Not used;

4. Specially designed or modified to reduce the compromising emanations of information-bearing signals beyond what is necessary for health, safety or electromagnetic interference standards;

5. Designed or modified to use cryptographic techniques to generate the spreading code for spread spectrum systems, including the hopping code for frequency hopping systems;

6. Designed or modified to use cryptographic techniques to generate channelising or scrambling codes for time-modulated ultra-wideband systems;

7. Not used;

8. Communications cable systems designed or modified using mechanical, electrical or electronic means to detect surreptitious intrusion.

Personalised smart cards: N.B.: If a personalised smart card has multiple functions, the control status of each function is assessed individually;

1. Where the cryptographic capability is restricted for use in equipment or systems excluded from control under entries b. to f. of this Note; or

2. For general public-use applications where the cryptographic capability is not user-accessible and it is specially designed and limited to allow protection of personal data stored within.

Receiving equipment for radio broadcast, pay television or similar restricted audience broadcast of the consumer type, without digital encryption except that exclusively used for sending the billing or programme-related information back to the broadcast providers;

Equipment where the cryptographic capability is not user-accessible and which is specially designed and limited to allow any of the following:

1. Execution of copy-protected software;

2. Access to any of the following:

2. a.

Copy-protected contents stored on read-only media; or

Information stored in encrypted form on media (e.g. in connection with the protection of intellectual property rights) when the media is offered for sale in identical sets to the public; or

3. Copying control of copyright protected audio/video data.

d. Technical Note:

Cryptographic equipment specially designed and limited for banking use or money transactions; Money transactions in 5A002 Note d. includes the collection and settlement of fares or credit functions.

Portable or mobile radiotelephones for civil use (e.g. for use with commercial civil cellular radiocommunications systems) that are not capable of end-to-end encryption;

Cordless telephone equipment not capable of end-to-end encryption where the maximum effective range of unboosted cordless operation (i.e. a single, unrelayed hop between terminal and home basestation) is less than 400 metres according to the manufacturer's specifications.

5B2Test, Inspection and Production Equipment

5B002

Equipment specially designed for:

1. The development of equipment or functions specified in 5A002, 5B002, 5D002 or 5E002 including measuring or test equipment;

2. The production of equipment or functions specified in 5A002, 5B002, 5D002 or 5E002, including measuring, test, repair or production equipment;

Measuring equipment specially designed to evaluate and validate the information security functions specified in 5A002 or 5D002.

5C2Materials None.

5D2Software 5D002 Note: 5D002 does not control:

5D2Software a.

Software specially designed or modified for the development, production or use of equipment or software specified in 5A002, 5B002 or 5D002;

Software specially designed or modified to support technology specified in 5E002;

Specific software, as follows:

1. Software having the characteristics, or performing or simulating the functions of the equipment specified in 5A002 or 5B002;

2. Software to certify software specified in 5D002.c.1.

Software required for the use of equipment excluded from control under the Note to 5A002;

Software providing any of the functions of equipment excluded from control under the Note to 5A002.

5E2Technology

5E002Technology according to the General Technology Note for the development, production or use of equipment or software specified in 5A002, 5B002 or 5D002.

CATEGORY 6 SENSORS AND LASERS

6ASystems, Equipment and Components a.

1. Active (transmitting or transmitting-and-receiving) systems, equipment and specially designed components therefor, as follows: Note: 6A001.a.1. does not control:

1. a.

Depth sounders operating vertically below the apparatus, not including a scanning function exceeding ± 20°, and limited to measuring the depth of water, the distance of submerged or buried objects or fish finding;

Acoustic beacons, as follows:

1. Acoustic emergency beacons;

2. Pingers specially designed for relocating or returning to an underwater position.

Wide-swath bathymetric survey systems designed for sea bed topographic mapping, having all of the following:

1. Being designed to take measurements at an angle exceeding 20° from the vertical;

2. Being designed to measure depths exceeding 600 m below the water surface; and

3. Being designed to provide any of the following:

3. a.

Incorporation of multiple beams any of which is less than 1,9°; or

Data accuracies of better than 0,3 % of water depth across the swath averaged over the individual measurements within the swath;

Object detection or location systems having any of the following:

1. A transmitting frequency below 10 kHz;

2. Sound pressure level exceeding 224 dB (reference 1 μPa at 1 m) for equipment with an operating frequency in the band from 10 kHz to 24 kHz inclusive;

3. Sound pressure level exceeding 235 dB (reference 1 μPa at 1 m) for equipment with an operating frequency in the band between 24 kHz and 30 kHz;

4. Forming beams of less than 1° on any axis and having an operating frequency of less than 100 kHz;

5. Designed to operate with an unambiguous display range exceeding 5120 m; or

6. Designed to withstand pressure during normal operation at depths exceeding 1000 m and having transducers with any of the following:

6. a.

Dynamic compensation for pressure; or

Incorporating other than lead zirconate titanate as the transduction element;

c. Technical Note:

Acoustic projectors, including transducers, incorporating piezoelectric, magnetostrictive, electrostrictive, electrodynamic or hydraulic elements operating individually or in a designed combination, having any of the following: Note 1: The control status of acoustic projectors, including transducers, specially designed for other equipment is determined by the control status of the other equipment. Note 2: 6A001.a.1.c. does not control electronic sources which direct the sound vertically only, or mechanical (e.g., air gun or vapour-shock gun) or chemical (e.g., explosive) sources. Acoustic power density is obtained by dividing the output acoustic power by the product of the area of the radiating surface and the frequency of operation.

1. An instantaneous radiated acoustic power density exceeding 0,01 mW/mm2/Hz for devices operating at frequencies below 10 kHz;

2. A continuously radiated acoustic power density exceeding 0,001 mW/mm2/Hz for devices operating at frequencies below 10 kHz; or

c. Technical Note:

3. Side-lobe suppression exceeding 22 dB;

Acoustic systems, equipment and specially designed components for determining the position of surface vessels or underwater vehicles designed to operate at a range exceeding 1000 m with a positioning accuracy of less than 10 m rms (root mean square) when measured at a range of 1000 m; Note: 6A001.a.1.d. includes:

a.

Equipment using coherent signal processing between two or more beacons and the hydrophone unit carried by the surface vessel or underwater vehicle;

b.

Equipment capable of automatically correcting speed-of-sound propagation errors for calculation of a point.

2. a. Technical Note:

Hydrophones having any of the following characteristics: Note: The control status of hydrophones specially designed for other equipment is determined by the control status of the other equipment. Hydrophone sensitivity is defined as twenty times the logarithm to the base 10 of the ratio of rms output voltage to a 1 V rms reference, when the hydrophone sensor, without a pre-amplifier, is placed in a plane wave acoustic field with an rms pressure of 1 μPa. For example, a hydrophone of – 160 dB (reference 1 V per μPa) would yield an output voltage of 10-8 V in such a field, while one of – 180 dB sensitivity would yield only 10-9 V output. Thus, – 160 dB is better than – 180 dB.

1. Incorporating continuous flexible sensors or assemblies of discrete sensor elements with either a diameter or length less than 20 mm and with a separation between elements of less than 20 mm;

2. Having any of the following sensing elements:

2. a.

Optical fibres; or

Flexible piezoelectric ceramic materials;

3. A hydrophone sensitivity better than – 180 dB at any depth with no acceleration compensation;

4. When designed to operate at depths exceeding 35 m with acceleration compensation; or

5. Designed for operation at depths exceeding 1000 m;

939 more provisions are not shown here; each has its own address.

Versions

2004-07-19

Cited by

Council Regulation (EC) No 428/2009 of 5 May 2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items (Recast) Regulation · Grade B
Council Regulation (EC) No 1334/2000 (OJ L 159, 30.6.2000, p. 1) Council Regulation (EC) No 2889/2000 (OJ L 336, 30.12.2000, p. 14) Council Regulation (EC) No 458/2001 (OJ L 65, 7.3.2001, p. 19) Council Regulation (EC) No 2432/2001 (OJ L 338, 20.12.2001, p. 1) Council Regulation (EC) No 880/2002 (OJ L 139, 29.5.2002, p. 7) Council Regulation (EC) No 149/2003 (OJ L 30, 5.2.2003, p. 1) Council Regulation (EC) No 1504/2004 (OJ L 281, 31.8.2004, p. 1) Council Regulation (EC) No 394/2006 (OJ L 74, 13.3.2006, p. 1) Council Regulation (EC) No 1183/2007 (OJ L 278, 22.10.2007, p. 1) Council Regulation
Council Regulation (EC) No 394/2006 of 27 February 2006 amending and updating Regulation (EC) No 1334/2000 setting up a Community regime for the control of exports of dual-use items and technology Regulation · Grade B
Annex I and IV to that Regulation should be amended in order to take account of changes adopted by the Wassenaar Arrangement, the Australia Group, the Missile Technology Control Regime and the NSG subsequent to the amendments made by Regulation (EC) No 1504/2004.