Address https://gelex.eu/eli/EU/regulation/2012/388@2012-04-19/en

Contents

1. Preamble
2. 1. Article 1
   2. Article 2
3. ANNEX
4. ANNEX
5. ANNEX I List referred to in Article 3 of this Regulation
6. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
7. 1. a.
8. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
9. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
10. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
11. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
12. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
13. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
14. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
15. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
16. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note: Technical Note: Technical Note: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
17. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note: Technical Note: Technical Note: NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.)
18. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note: Technical Note: Technical Note: NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.
19. LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note: Technical Note: Technical Note: NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.)
20. CATEGORY 0 NUCLEAR MATERIALS, FACILITIES, AND EQUIPMENT
21. 0ASystems, Equipment and Components
22. 0BTest, Inspection and Production Equipment Note:Note:
23. 0BTest, Inspection and Production Equipment a.
24. a.
25. b.
26. c.
27. 13. a.
28. 7. a.
29. 5. a.
30. 6. a.
31. 0BTest, Inspection and Production Equipment Note: a.
32. 0CMaterials Note:Note:NB:Note 1:Note 2:
33. 0CMaterials Note: a.
34. 0CMaterials Note:Note:NB:Note 1: a.
35. CATEGORY 1 SPECIAL MATERIALS AND RELATED EQUIPMENT
36. 1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: Technical Note: Note:NB: Technical Notes: 1.2. Technical Note: NB: Technical Note:
37. 1ASystems, Equipment and Components a.
38. 1ASystems, Equipment and Components N.B: a.
39. b.Note 1:Note 2:Note 3:Note 4:
40. 1. a.
41. b.Note 1: a.
42. a.
43. b.
44. c.
45. d.
46. 1ASystems, Equipment and Components N.B:Note:NB:NB: a.
47. 4. a.
48. 1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: a.
49. 1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes:
50. 1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: a.
51. 1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: Technical Note: Note:NB: a.
52. 1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: Technical Note: Note:NB: Technical Notes: 1.2. a.
53. 1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: Technical Note: Note:NB: Technical Notes: 1.2. Technical Note: NB: a.
54. 1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note:Note 1:Note 2:Note:NB:
55. 1BTest, Inspection and Production Equipment NB: a.
56. 1BTest, Inspection and Production Equipment NB: Technical Note: NB: a.
57. 1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note: a.
58. 1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB: a.
59. 1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note: a.
60. 1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note:Note 1:Note 2: a.
61. 1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note:Note 1:Note 2:Note: a.
62. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: Technical Notes: Note:NB:Note 1:Note 2:Note 3:Note 4:
63. 1CMaterials Technical Note:
64. pt_2 a.
65. 1CMaterials Technical Note: NB:
66. a.Note 1:Note 2:
67. a.Note 1: a.
68. 1. Technical Note:
69. 1. a.
70. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. a.
71. 1. a.
72. 2. a.
73. 3. a.
74. 4. a.
75. 5. a.
76. 1. Technical Note:
77. 2. Technical Note:
78. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note:
79. 4. a.
80. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: a.
81. 1. a.
82. 2. a.
83. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: a.
84. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB: a.Note:
85. a.
86. b.
87. c.
88. d.
89. 1. a.
90. 2.Note 1:Note 2: Technical Note:
91. 2. a.
92. a.
93. b.
94. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: a. Technical Note: Note:
95. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: a.Note:
96. a.
97. b.
98. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1: a.
99. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: a.NB:
100. 1. Technical Note:
101. 2. Technical Note:
102. 2. a.
103. 3. a.
104. 4.NB: a.
105. 5. Technical Note:
106. 5. a.
107. 6. a.
108. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: a.
109. 1. a.
110. 2. a.
111. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: a.
112. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: a.Note:
113. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: a.
114. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note: a.
115. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note: a.
116. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note: a.
117. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note: a.
118. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: a.
119. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:
120. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4: a.
121. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note: a.
122. 2. a.
123. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: a.
124. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: Technical Notes:
125. 2. a.
126. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: Technical Notes: Note: a.
127. 1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: Technical Notes: Note:NB:
128. a.Note 1:Note 2:Note 3:Note 4:
129. 5.Note: a.
130. 1ETechnology Note:
131. 1ETechnology a.
132. 1. a.
133. 3. a.
134. CATEGORY 2 MATERIALS PROCESSING
135. 2ASystems, Equipment and Components NB:NB:Note: Technical Note:
136. 2ASystems, Equipment and Components NB:NB:Note: a.Note:
137. 2. a.
138. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: Technical Note: Technical Notes: 1.2. Technical Notes: 1.2.
139. 2BTest, Inspection and Production Equipment Technical Notes: 1.2. a.
140. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5. a.
141. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2: a.
142. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: a.
143. 2.Note: a.
144. 1. a.
145. 4. a.
146. 2. a.
147. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes:
148. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: a.
149. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB: a.NB:
150. 1. a.
151. 2. a.
152. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note: a. Technical Note: NB:
153. 1. Technical Note: Note:
154. 1. Technical Note: a.
155. 2. a.
156. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB: a. Technical Note:
157. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: a.
158. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB: a.
159. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB: a.
160. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: a.
161. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB: a.
162. 1. a.
163. 3.Note 1:Note 2:
164. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: a.
165. 2.Note: a.
166. b.Note:Note 1:Note 2:
167. a.
168. b.
169. b.Note:Note 1: a.
170. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: a.
171. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: a.
172. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: a.
173. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB: a.
174. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: a.
175. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: Technical Note: a.
176. 2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: Technical Note: Technical Notes: 1.2. a.
177. 9. a.
178. 1. a.
179. 2DSoftware Note 1:Note 2:NB:
180. 2ETechnology Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Table — Deposition Techniques — Notes Table — Deposition Techniques — Technical Note Deposition techniques
181. 2ETechnology a.
182. 1. a.
183. 2. a.
184. 2ETechnology Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Table — Deposition Techniques — Notes Deposition techniques
185. 5. a.
186. a.NB 1NB 2NB 3
187. CATEGORY 3 ELECTRONICS
188. 3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:NB:Note:
189. 3ASystems, Equipment and Components Note 1:Note 2:NB:
190. a.Note 1:Note 2:
191. 1. a.
192. 2. a.
193. 5. a.NB: Technical Notes: 1.2.3.4.5.6.7.8.9.
194. 2. a.
195. a.
196. b.
197. 6. a.
198. 7.Note: Technical Notes:
199. 7. a.
200. 10. a.
201. 11. a.
202. 12. Technical Note:
203. 1.Note 1: a.
204. 1:Note 2: a.
205. 4. a.
206. 2.Note 1:Note 2:Note 3:
207. 2. a.
208. 3. a.
209. 4. Technical Note: NB:Note 1:Note 2:
210. 4. a.
211. 5. a.
212. 8. a.
213. 9. Technical Notes: 1.2.
214. 9. a.
215. 10. Technical Note:
216. 10. a.
217. 11. a.
218. 1. a.
219. 1. Technical Notes: 1.2.3.4.Note:
220. 2.NB: a.
221. 3.NB:Note: a.
222. 4. Technical Note:
223. g.Note 1:Note 2: Technical Note:
224. h.Note 1:Note 2:Note 3: Technical Note:
225. 5. Technical Notes: 1.2.
226. 6. a.
227. d.Note 1.:Note 2.: Technical Notes: 1.2.
228. 3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. a.
229. 1. a.
230. 2. a.
231. 3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: a.
232. 3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB: a.
233. 3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: a.
234. 3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: Technical Note: a.
235. 3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:NB: a.
236. 3BTest, Inspection and Production Equipment
237. 1. a.
238. 3. a.
239. 3CMaterials Note:Note:
240. 3CMaterials a.
241. 3DSoftware Technical Note: Note:
242. 3ETechnology Note 1:Note 2:Note 1:Note 2:
243. 3ETechnology Note 1:Note 2: a.
244. 3ETechnology Note 1:Note 2:Note 1: a.
245. CATEGORY 4 Note 1:Note 2:NB:Note 3: COMPUTERS
246. 4ASystems, Equipment and Components NB:Note 1:Note 2:Note:
247. 4ASystems, Equipment and Components NB: a.
248. 4ASystems, Equipment and Components NB:Note 1:Note 2: a.
249. c.Note 1:Note 2:
250. 4BTest, Inspection and Production Equipment
251. 4DSoftware Note:
252. 4ETechnology a.
253. Abbreviations used in this Technical Note
254. Outline of APP calculation method 1.Note2.3.4.Note 1Note 2Note 3Note 4Note 5Note 6Note 7
255. Outline of APP calculation method 1.Note2.3.4.Note 1Note 2Note 3Note 4Note 5Note 6
256. CATEGORY 5 TELECOMMUNICATIONS AND INFORMATION SECURITY
257. PART 1 Note 1:NB 1:NB 2:Note 2: TELECOMMUNICATIONS
258. 5A1Systems, Equipment and Components Technical Note: Note:
259. 5A1Systems, Equipment and Components a.Note:
260. 1. a.
261. 2. a.
262. 3. a.
263. 4. a.
264. 5. a.
265. 6. Technical Notes: 1.2.
266. a.
267. b.
268. 5B1Test, Inspection and Production Equipment
269. 2. a.
270. 5D1Software a.
271. 2. a.
272. 5E1Technology
273. 1. Technical Note:
274. 2. a.
275. 4. a.
276. 6. a.
277. PART 2 Note 1:Note 2:Note 3:Note 4: Technical Note: INFORMATION SECURITY
278. a.
279. b.
280. c.
281. d.
282. 5A2Systems, Equipment and Components
283. 1. Technical Notes: 1.2.3.Note:
284. 6. a.
285. 9. Technical Note:
286. a.
287. 1. a.
288. 3. Technical Note:
289. 2. Technical Note:
290. b.
291. c.
292. d. Technical Note:
293. e.
294. f.
295. g.
296. h.
297. i.
298. j.
299. 5B2Test, Inspection and Production Equipment
300. 5D2Software Note:
301. 5D2Software a.
302. 5E2Technology
303. CATEGORY 6 SENSORS AND LASERS
304. 6ASystems, Equipment and Components a.
305. 1.Note: a.
306. 1. Technical Notes 1.2.
307. 1. a.
308. 2. Technical Note
309. 2. a.

THE EUROPEAN PARLIAMENT AND THE COUNCIL OF THE EUROPEAN UNION,

Having regard to the Treaty on the Functioning of the European Union, and in particular Article 207(2) thereof,

Having regard to the proposal from the European Commission,

After transmission of the draft legislative act to the national parliaments,

Acting in accordance with the ordinary legislative procedure,

Whereas:

(1) Council Regulation (EC) No 428/2009 requires dual-use items (including software and technology) to be subject to effective control when they are exported from or transit through the Union, or are delivered to a third country as a result of brokering services provided by a broker resident or established in the Union.

(2) In order to enable Member States and the Union to comply with their international commitments, Annex I to Regulation (EC) No 428/2009 establishes the common list of dual-use items referred to in Article 3 of that Regulation, which implements internationally agreed dual-use controls. These commitments were undertaken within the context of participation in the Australia Group, the Missile Technology Control Regime, the Nuclear Suppliers Group, the Wassenaar Arrangement and the Chemical Weapons Convention.

(3) Regulation (EC) No 428/2009 provides for the list set out in Annex I to be updated in conformity with the relevant obligations and commitments, and any modification thereof, that Member States have accepted as members of international non-proliferation regimes and export control arrangements, or by ratification of relevant international treaties.

(4) Annex I to Regulation (EC) No 428/2009 should be amended in order to take account of changes agreed within the Australia Group, the Nuclear Suppliers Group, the Missile Technology Control Regime and the Wassenaar Arrangement, subsequent to the adoption of that Regulation.

(5) In order to facilitate references for export control authorities and operators, an updated and consolidated version of Annex I to Regulation (EC) No 428/2009 should be published.

(6) Regulation (EC) No 428/2009 should therefore be amended accordingly,

HAVE ADOPTED THIS REGULATION:

Article 1

Annex I to Regulation (EC) No 428/2009 shall be replaced by the text in the Annex to this Regulation.

Article 2

This Regulation shall enter into force on the thirtieth day following that of its publication in the Official Journal of the European Union.

This Regulation shall be binding in its entirety and directly applicable in all Member States. Done at Strasbourg, 19 April 2012. For the European Parliament The President M. Schulz For the Council The President M. Bødskov

ANNEX

ANNEX

ANNEX I List referred to in Article 3 of this Regulation

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

Generally available to the public by being:

1. Sold from stock at retail selling points, without restriction, by means of:

1. a.

Over-the-counter transactions;

b.

Mail order transactions;

c.

Electronic transactions; or

d.

Telephone order transactions; and

2.NB: Designed for installation by the user without further substantial support by the supplier; or Entry a. of the General Software Note does not release software specified in Category 5 — Part 2 (Information Security).

b.

In the public domain.

a comma is used to separate whole number from decimals (e.g. 3,67 cm),

a space is used to indicate thousands in whole numbers (e.g. EUR 100000).

a full stop is used to separate whole numbers from decimals (e.g. 3,67 cm),

a comma is used to indicate thousands in whole numbers (e.g. EUR 100000).

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

The common hardware and software architecture;

b.

The common design and process technology; and

c.

The common basic characteristics.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

A single continuous optical reflecting surface which is dynamically deformed by the application of individual torques or forces to compensate for distortions in the optical waveform incident upon the mirror; or

b.

Multiple optical reflecting elements that can be individually and dynamically repositioned by the application of torques or forces to compensate for distortions in the optical waveform incident upon the mirror.

a.

Accept data;

b.

Store data or instructions in fixed or alterable (writable) storage devices;

c.

Process data by means of a stored sequence of instructions which is modifiable; and

d.

Provide output of data.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

For plutonium isotopes and uranium-233, the isotope weight in grammes;

b.

For uranium enriched 1 per cent or greater in the isotope uranium-235, the element weight in grammes multiplied by the square of its enrichment expressed as a decimal weight fraction;

c.

For uranium enriched below 1 per cent in the isotope uranium-235, the element weight in grammes multiplied by 0,0001.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

Modifying automatically the source code introduced by the user;

b.

Providing knowledge linked to a class of problems in quasi-natural language; or

c.

Acquiring the knowledge required for their development (symbolic training).

a.

Continuous monofilaments;

b.

Continuous yarns and rovings;

c.

Tapes, fabrics, random mats and braids;

d.

Chopped fibres, staple fibres and coherent fibre blankets;

e.

Whiskers, either monocrystalline or polycrystalline, of any length;

f.

Aromatic polyamide pulp.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

Containing at least one unencapsulated device;

b.

Connected together using typical IC production methods;

c.

Replaceable as an entity; and

d.

Not normally capable of being disassembled.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

Allows an arbitrary number of independent data devices to communicate directly with each other; and

b.

Is confined to a geographical area of moderate size (e.g. office building, plant, campus, warehouse).

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

Are formed by means of diffusion processes, implantation processes or deposition processes in or on a single semiconducting piece of material, a so-called chip;

b.

Can be considered as indivisibly associated; and

c.

Perform the function(s) of a circuit.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

Allows an arbitrary number of independent or interconnected data devices to communicate directly with each other; and

b.

Is confined to the communication between devices within the immediate vicinity of an individual person or device controller (e.g. single room, office, or automobile).

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note: Technical Note: Technical Note: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

Is multifunctional;

b.

Is capable of positioning or orienting material, parts, tools or special devices through variable movements in three dimensional space;

c.

Incorporates three or more closed or open loop servo-devices which may include stepping motors; and

d.

Has user accessible programmability by means of teach/playback method or by means of an electronic computer which may be a programmable logic controller, i.e. without mechanical intervention.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note: Technical Note: Technical Note: NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.)

1. Manipulation mechanisms which are only manually/ teleoperator controllable;

2. Fixed sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is mechanically limited by fixed stops, such as pins or cams. The sequence of motions and the selection of paths or angles are not variable or changeable by mechanical, electronic or electrical means;

3. Mechanically controlled variable sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is mechanically limited by fixed, but adjustable stops, such as pins or cams. The sequence of motions and the selection of paths or angles are variable within the fixed programme pattern. Variations or modifications of the programme pattern (e.g. changes of pins or exchanges of cams) in one or more motion axes are accomplished only through mechanical operations;

4. Non-servo-controlled variable sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is variable but the sequence proceeds only by the binary signal from mechanically fixed electrical binary devices or adjustable stops;

5. Stacker cranes defined as Cartesian coordinate manipulator systems manufactured as an integral part of a vertical array of storage bins and designed to access the contents of those bins for storage or retrieval.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note: Technical Note: Technical Note: NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.) a.

A physical change in wiring or interconnections; or

b.

The setting of function controls including entry of parameters.

LIST OF DUAL-USE ITEMS GENERAL NOTES TO ANNEX I 1.2.NB:3.4. NUCLEAR TECHNOLOGY NOTE (NTN) GENERAL TECHNOLOGY NOTE (GTN) NB: GENERAL SOFTWARE NOTE (GSN) EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX DEFINITIONS OF TERMS USED IN THIS ANNEX NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB:NB:NB:NB:NB:NB 1:NB 2:NB: Technical Note: Technical Note: Technical Note: NB:NB:NB:NB:NB 1:NB 2:NB:NB:NB:NB 1:NB 2:NB:NB: (To be read in conjunction with Section E of Category 0.) (To be read in conjunction with Section E of Categories 1 to 9.) (This note overrides any control within Section D of Categories 0 to 9.)

CATEGORY 0 NUCLEAR MATERIALS, FACILITIES, AND EQUIPMENT

0ASystems, Equipment and Components

0A001Nuclear reactors and specially designed or prepared equipment and components therefor, as follows:

a.

Nuclear reactors;

b.

Metal vessels, or major shop-fabricated parts therefor, including the reactor vessel head for a reactor pressure vessel, specially designed or prepared to contain the core of a nuclear reactor;

c.

Manipulative equipment specially designed or prepared for inserting or removing fuel in a nuclear reactor;

d.

Control rods specially designed or prepared for the control of the fission process in a nuclear reactor, support or suspension structures therefor, rod drive mechanisms and rod guide tubes;

e.

Pressure tubes specially designed or prepared to contain fuel elements and the primary coolant in a nuclear reactor at an operating pressure in excess of 5,1 MPa;

f.

Zirconium metal and alloys in the form of tubes or assemblies of tubes in which the ratio of hafnium to zirconium is less than 1:500 parts by weight, specially designed or prepared for use in a nuclear reactor;

g.

Coolant pumps specially designed or prepared for circulating the primary coolant of nuclear reactors;

h.Note:

Nuclear reactor internals specially designed or prepared for use in a nuclear reactor, including support columns for the core, fuel channels, thermal shields, baffles, core grid plates, and diffuser plates; In 0A001.h. nuclear reactor internals means any major structure within a reactor vessel which has one or more functions such as supporting the core, maintaining fuel alignment, directing primary coolant flow, providing radiation shields for the reactor vessel, and guiding in-core instrumentation.

i.

Heat exchangers (steam generators) specially designed or prepared for use in the primary coolant circuit of a nuclear reactor;

j.

Neutron detection and measuring instruments specially designed or prepared for determining neutron flux levels within the core of a nuclear reactor.

0BTest, Inspection and Production Equipment Note:Note:

0B001Plant for the separation of isotopes of natural uranium, depleted uranium and special fissile materials, and specially designed or prepared equipment and components therefor, as follows: 0B002Specially designed or prepared auxiliary systems, equipment and components, as follows, for isotope separation plant specified in 0B001, made of or protected by materials resistant to corrosion by UF6: 0B003Plant for the conversion of uranium and equipment specially designed or prepared therefor, as follows: 0B004Plant for the production or concentration of heavy water, deuterium and deuterium compounds and specially designed or prepared equipment and components therefor, as follows: 0B005Plant specially designed for the fabrication of nuclear reactor fuel elements and specially designed or prepared equipment therefor. A plant for the fabrication of nuclear reactor fuel elements includes equipment which: 0B006Plant for the reprocessing of irradiated nuclear reactor fuel elements, and specially designed or prepared equipment and components therefor. 0B006 includes: 0B007Plant for the conversion of plutonium and equipment specially designed or prepared therefor, as follows:

0BTest, Inspection and Production Equipment a.

Plant specially designed for separating isotopes of natural uranium, depleted uranium, and special fissile materials, as follows:

1. Gas centrifuge separation plant;

2. Gaseous diffusion separation plant;

3. Aerodynamic separation plant;

4. Chemical exchange separation plant;

5. Ion-exchange separation plant;

6. Atomic vapour laser isotope separation (AVLIS) plant;

7. Molecular laser isotope separation (MLIS) plant;

8. Plasma separation plant;

9. Electro magnetic separation plant;

b.Note:

Gas centrifuges and assemblies and components, specially designed or prepared for gas centrifuge separation process, as follows: In 0B001.b. high strength-to-density ratio material means any of the following:

a.

Maraging steel capable of an ultimate tensile strength of 2050 MPa or more;

b.

Aluminium alloys capable of an ultimate tensile strength of 460 MPa or more; or

c.

Fibrous or filamentary materials with a specific modulus of more than 3,18 × 106 m and a specific tensile strength greater than 76,2 × 103 m;

1. Gas centrifuges;

2. Complete rotor assemblies;

3. Rotor tube cylinders with a wall thickness of 12 mm or less, a diameter of between 75 mm and 400 mm, made from high strength-to-density ratio materials;

4. Rings or bellows with a wall thickness of 3 mm or less and a diameter of between 75 mm and 400 mm and designed to give local support to a rotor tube or to join a number together, made from high strength-to-density ratio materials;

5. Baffles of between 75 mm and 400 mm diameter for mounting inside a rotor tube, made from high strength-to-density ratio materials.

6. Top or bottom caps of between 75 mm and 400 mm diameter to fit the ends of a rotor tube, made from high strength-to-density ratio materials;

7. Magnetic suspension bearings consisting of an annular magnet suspended within a housing made of or protected by materials resistant to corrosion by UF6 containing a damping medium and having the magnet coupling with a pole piece or second magnet fitted to the top cap of the rotor;

8. Specially prepared bearings comprising a pivot-cup assembly mounted on a damper;

9. Molecular pumps comprised of cylinders having internally machined or extruded helical grooves and internally machined bores;

10. Ring-shaped motor stators for multiphase AC hysteresis (or reluctance) motors for synchronous operation within a vacuum in the frequency range of 600 to 2000 Hz and a power range of 50 to 1000 Volt-Amps;

11. Centrifuge housing/recipients to contain the rotor tube assembly of a gas centrifuge, consisting of a rigid cylinder of wall thickness up to 30 mm with precision machined ends and made of or protected by materials resistant to corrosion by UF6;

12. Scoops consisting of tubes of up to 12 mm internal diameter for the extraction of UF6 gas from within a centrifuge rotor tube by a Pitot tube action, made of or protected by materials resistant to corrosion by UF6;

13. Frequency changers (converters or inverters) specially designed or prepared to supply motor stators for gas centrifuge enrichment, having all of the following characteristics, and specially designed components therefor:

13. a.

Multiphase output of 600 to 2000 Hz;

b.

Frequency control better than 0,1 %;

c.

Harmonic distortion of less than 2 %; and

d.

An efficiency greater than 80 %;

14. Bellows valves made of or protected by materials resistant to corrosion by UF6, with a diameter of 10 mm to 160 mm;

c.

Equipment and components, specially designed or prepared for gaseous diffusion separation process, as follows:

1. Gaseous diffusion barriers made of porous metallic, polymer or ceramic materials resistant to corrosion by UF6 with a pore size of 10 to 100 nm, a thickness of 5 mm or less, and, for tubular forms, a diameter of 25 mm or less;

2. Gaseous diffuser housings made of or protected by materials resistant to corrosion by UF6;

3. Compressors (positive displacement, centrifugal and axial flow types) or gas blowers with a suction volume capacity of 1 m3/min or more of UF6, and discharge pressure up to 666,7 kPa, made of or protected by materials resistant to corrosion by UF6;

4. Rotary shaft seals for compressors or blowers specified in 0B001.c.3. and designed for a buffer gas in-leakage rate of less than 1000 cm3/min.;

5. Heat exchangers made of aluminium, copper, nickel, or alloys containing more than 60 per cent nickel, or combinations of these metals as clad tubes, designed to operate at sub-atmospheric pressure with a leak rate that limits the pressure rise to less than 10 Pa per hour under a pressure differential of 100 kPa;

6. Bellow valves made of or protected by materials resistant to corrosion by UF6, with a diameter of 40 mm to 1500 mm;

d.

Equipment and components, specially designed or prepared for aerodynamic separation process, as follows:

1. Separation nozzles consisting of slit-shaped, curved channels having a radius of curvature less than 1 mm, resistant to corrosion by UF6, and having a knife-edge contained within the nozzle which separates the gas flowing through the nozzle into two streams;

2. Tangential inlet flow-driven cylindrical or conical tubes, (vortex tubes), made of or protected by materials resistant to corrosion by UF6 with a diameter of between 0,5 cm and 4 cm and a length to diameter ratio of 20:1 or less and with one or more tangential inlets;

3. Compressors (positive displacement, centrifugal and axial flow types) or gas blowers with a suction volume capacity of 2 m3/min or more, made of or protected by materials resistant to corrosion by UF6, and rotary shaft seals therefor;

4. Heat exchangers made of or protected by materials resistant to corrosion by UF6;

5. Aerodynamic separation element housings, made of or protected by materials resistant to corrosion by UF6 to contain vortex tubes or separation nozzles;

6. Bellows valves made of or protected by materials resistant to corrosion by UF6, with a diameter of 40 to 1500 mm;

7. Process systems for separating UF6 from carrier gas (hydrogen or helium) to 1 ppm UF6 content or less, including:

7. a.

Cryogenic heat exchangers and cryoseparators capable of temperatures of 153K (– 120 °C) or less;

b.

Cryogenic refrigeration units capable of temperatures of 153 K (– 120 °C) or less;

c.

Separation nozzle or vortex tube units for the separation of UF6 from carrier gas;

d.

UF6 cold traps capable of temperatures of 253 K (– 120 °C) or less;

e.

Equipment and components, specially designed or prepared for chemical exchange separation process, as follows:

1. Fast-exchange liquid-liquid pulse columns with stage residence time of 30 seconds or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorocarbon polymers or glass);

2. Fast-exchange liquid-liquid centrifugal contactors with stage residence time of 30 seconds or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorocarbon polymers or glass);

3. Electrochemical reduction cells resistant to concentrated hydrochloric acid solutions, for reduction of uranium from one valence state to another;

4. Electrochemical reduction cells feed equipment to take U+4 from the organic stream and, for those parts in contact with the process stream, made of or protected by suitable materials (e.g. glass, fluorocarbon polymers, polyphenyl sulphate, polyether sulfone and resin-impregnated graphite);

5. Feed preparation systems for producing high purity uranium chloride solution consisting of dissolution, solvent extraction and/or ion exchange equipment for purification and electrolytic cells for reducing the uranium U+6 or U+4 to U+3;

6. Uranium oxidation systems for oxidation of U+3 to U+4;

f.

Equipment and components, specially designed or prepared for ion-exchange separation process, as follows:

1. Fast reacting ion-exchange resins, pellicular or porous macro-reticulated resins in which the active chemical exchange groups are limited to a coating on the surface of an inactive porous support structure, and other composite structures in any suitable form, including particles or fibres, with diameters of 0,2 mm or less, resistant to concentrated hydrochloric acid and designed to have an exchange rate half-time of less than 10 seconds and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C);

2. Ion exchange columns (cylindrical) with a diameter greater than 1000 mm, made of or protected by materials resistant to concentrated hydrochloric acid (e.g. titanium or fluorocarbon plastics) and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C) and pressures above 0,7 MPa;

3. Ion exchange reflux systems (chemical or electrochemical oxidation or reduction systems) for regeneration of the chemical reducing or oxidising agents used in ion exchange enrichment cascades;

g.

Equipment and components, specially designed or prepared for atomic vapour laser isotope separation process (AVLIS), as follows:

1. High power strip or scanning electron beam guns with a delivered power of more than 2,5 kW/cm for use in uranium vaporisation systems;

2.NB: Liquid uranium metal handling systems for molten uranium or uranium alloys, consisting of crucibles, made of or protected by suitable corrosion and heat resistant materials (e.g. tantalum, yttria-coated graphite, graphite coated with other rare earth oxides or mixtures thereof), and cooling equipment for the crucibles; SEE ALSO 2A225.

3. Product and tails collector systems made of or lined with materials resistant to the heat and corrosion of uranium metal vapour or liquid, such as yttria-coated graphite or tantalum;

4. Separator module housings (cylindrical or rectangular vessels) for containing the uranium metal vapour source, the electron beam gun and the product and tails collectors;

5.NB: Lasers or laser systems for the separation of uranium isotopes with a spectrum frequency stabiliser for operation over extended periods of time; SEE ALSO 6A005 AND 6A205.

h.

Equipment and components, specially designed or prepared for molecular laser isotope separation process (MLIS) or chemical reaction by isotope selective laser activation (CRISLA), as follows:

1. Supersonic expansion nozzles for cooling mixtures of UF6 and carrier gas to 150 K (– 123 °C) or less and made from materials resistant to corrosion by UF6;

2. Uranium pentafluoride (UF5) product collectors consisting of filter, impact, or cyclone-type collectors or combinations thereof, and made of materials resistant to corrosion by UF5/UF6;

3. Compressors made of or protected by materials resistant to corrosion by UF6, and rotary shaft seals therefor;

4. Equipment for fluorinating UF5 (solid) to UF6 (gas);

5. Process systems for separating UF6 from carrier gas (e.g. nitrogen or argon) including:

5. a.

Cryogenic heat exchangers and cryoseparators capable of temperatures of 153 K (– 120 °C) or less;

b.

Cryogenic refrigeration units capable of temperatures of 153 K (– 120 °C) or less;

c.

UF6 cold traps capable of temperatures of 253 K (– 20 °C) or less;

6.NB: Lasers or laser systems for the separation of uranium isotopes with a spectrum frequency stabiliser for operation over extended periods of time; SEE ALSO 6A005 AND 6A205.

i.

Equipment and components, specially designed or prepared for plasma separation process, as follows:

1. Microwave power sources and antennae for producing or accelerating ions, with an output frequency greater than 30 GHz and mean power output greater than 50 kW;

2. Radio frequency ion excitation coils for frequencies of more than 100 kHz and capable of handling more than 40 kW mean power;

3. Uranium plasma generation systems;

4.NB: Liquid metal handling systems for molten uranium or uranium alloys, consisting of crucibles, made of or protected by suitable corrosion and heat resistant materials (e.g. tantalum, yttria-coated graphite, graphite coated with other rare earth oxides or mixtures thereof), and cooling equipment for the crucibles; SEE ALSO 2A225.

5. Product and tails collectors made of or protected by materials resistant to the heat and corrosion of uranium vapour such as yttria-coated graphite or tantalum;

6. Separator module housings (cylindrical) for containing the uranium plasma source, radio-frequency drive coil and the product and tails collectors and made of a suitable non-magnetic material (e.g. stainless steel);

j.

Equipment and components, specially designed or prepared for electromagnetic separation process, as follows:

1. Ion sources, single or multiple, consisting of a vapour source, ioniser, and beam accelerator made of suitable non-magnetic materials (e.g. graphite, stainless steel, or copper) and capable of providing a total ion beam current of 50 mA or greater;

2. Ion collector plates for collection of enriched or depleted uranium ion beams, consisting of two or more slits and pockets and made of suitable non-magnetic materials (e.g. graphite or stainless steel);

3. Vacuum housings for uranium electromagnetic separators made of non-magnetic materials (e.g. stainless steel) and designed to operate at pressures of 0,1 Pa or lower;

4. Magnet pole pieces with a diameter greater than 2 m;

5. High voltage power supplies for ion sources, having all of the following characteristics:

5. a.

Capable of continuous operation;

b.

Output voltage of 20000 V or greater;

c.

Output current of 1 A or greater; and

d.NB:

Voltage regulation of better than 0,01 % over a period of 8 hours; SEE ALSO 3A227.

6. Magnet power supplies (high power, direct current) having all of the following characteristics:

6. a.

Capable of continuous operation with a current output of 500 A or greater at a voltage of 100 V or greater; and

b.NB:

Current or voltage regulation better than 0,01 % over a period of 8 hours. SEE ALSO 3A226.

a.

Feed autoclaves, ovens or systems used for passing UF6 to the enrichment process;

b.

Desublimers or cold traps, used to remove UF6 from the enrichment process for subsequent transfer upon heating;

c.

Product and tails stations for transferring UF6 into containers;

d.

Liquefaction or solidification stations used to remove UF6 from the enrichment process by compressing, cooling and converting UF6 to a liquid or solid form;

e.

Piping systems and header systems specially designed for handling UF6 within gaseous diffusion, centrifuge or aerodynamic cascades;

f.

1. Vacuum manifolds or vacuum headers having a suction capacity of 5 m3/minute or more; or

2. Vacuum pumps specially designed for use in UF6 bearing atmospheres;

g.

UF6 mass spectrometers/ion sources specially designed or prepared for taking on-line samples of feed, product or tails from UF6 gas streams and having all of the following characteristics:

1. Unit resolution for mass of more than 320 amu;

2. Ion sources constructed of or lined with nichrome or monel, or nickel plated;

3. Electron bombardment ionisation sources; and

4. Collector system suitable for isotopic analysis.

a.

Systems for the conversion of uranium ore concentrates to UO3;

b.

Systems for the conversion of UO3 to UF6;

c.

Systems for the conversion of UO3 to UO2;

d.

Systems for the conversion of UO2 to UF4;

e.

Systems for the conversion of UF4 to UF6;

f.

Systems for the conversion of UF4 to uranium metal;

g.

Systems for the conversion of UF6 to UO2;

h.

Systems for the conversion of UF6 to UF4;

i.

Systems for the conversion of UO2 to UCl4.

a.

Plant for the production of heavy water, deuterium or deuterium compounds, as follows:

1. Water-hydrogen sulphide exchange plants;

2. Ammonia-hydrogen exchange plants;

b.

Equipment and components, as follows:

1. Water-hydrogen sulphide exchange towers fabricated from fine carbon steel (e.g. ASTM A516) with diameters of 6 m to 9 m, capable of operating at pressures greater than or equal to 2 MPa and with a corrosion allowance of 6 mm or greater;

2. Single stage, low head (i.e. 0,2 MPa) centrifugal blowers or compressors for hydrogen sulphide gas circulation (i.e. gas containing more than 70 % H2S) with a throughput capacity greater than or equal to 56 m3/second when operating at pressures greater than or equal to 1,8 MPa suction and having seals designed for wet H2S service;

3. Ammonia-hydrogen exchange towers greater than or equal to 35 m in height with diameters of 1,5 m to 2,5 m capable of operating at pressures greater than 15 MPa;

4. Tower internals, including stage contactors, and stage pumps, including those which are submersible, for heavy water production utilising the ammonia-hydrogen exchange process;

5. Ammonia crackers with operating pressures greater than or equal to 3 MPa for heavy water production utilising the ammonia-hydrogen exchange process;

6. Infrared absorption analysers capable of on-line hydrogen/deuterium ratio analysis where deuterium concentrations are equal to or greater than 90 %;

7. Catalytic burners for the conversion of enriched deuterium gas into heavy water utilising the ammonia-hydrogen exchange process;

8. Complete heavy water upgrade systems, or columns therefor, for the upgrade of heavy water to reactor-grade deuterium concentration.

0BTest, Inspection and Production Equipment Note: a.

Normally comes into direct contact with or directly processes or controls the production flow of nuclear materials;

b.

Seals the nuclear materials within the cladding;

c.

Checks the integrity of the cladding or the seal; or

d.

Checks the finish treatment of the sealed fuel.

0BTest, Inspection and Production Equipment Note:Note: a.

Plant for the reprocessing of irradiated nuclear reactor fuel elements including equipment and components which normally come into direct contact with and directly control the irradiated fuel and the major nuclear material and fission product processing streams;

b.

Fuel element chopping or shredding machines, i.e. remotely operated equipment to cut, chop, shred or shear irradiated nuclear reactor fuel assemblies, bundles or rods;

c.

Dissolvers, critically safe tanks (e.g. small diameter, annular or slab tanks) specially designed or prepared for the dissolution of irradiated nuclear reactor fuel, which are capable of withstanding hot, highly corrosive liquids, and which can be remotely loaded and maintained;

d.

Counter-current solvent extractors and ion-exchange processing equipment specially designed or prepared for use in a plant for the reprocessing of irradiated natural uranium, depleted uranium or special fissile materials;

e.Note:

Holding or storage vessels specially designed to be critically safe and resistant to the corrosive effects of nitric acid; Holding or storage vessels may have the following features:

1. Walls or internal structures with a boron equivalent (calculated for all constituent elements as defined in the note to 0C004) of at least two per cent;

2. A maximum diameter of 175 mm for cylindrical vessels; or

3. A maximum width of 75 mm for either a slab or annular vessel.

f.

Process control instrumentation specially designed or prepared for monitoring or controlling the reprocessing of irradiated natural uranium, depleted uranium or special fissile materials.

a.

Systems for the conversion of plutonium nitrate to oxide;

b.

Systems for plutonium metal production.

0CMaterials Note:Note:NB:Note 1:Note 2:

0C001Natural uranium or depleted uranium or thorium in the form of metal, alloy, chemical compound or concentrate and any other material containing one or more of the foregoing; 0C001 does not control the following: 0C002Special fissile materials 0C002 does not control four effective grammes or less when contained in a sensing component in instruments. 0C003Deuterium, heavy water (deuterium oxide) and other compounds of deuterium, and mixtures and solutions containing deuterium, in which the isotopic ratio of deuterium to hydrogen exceeds 1:5000. 0C004Graphite, nuclear grade, having a purity level of less than 5 parts per million boron equivalent and with a density greater than 1,5 g/cm3. SEE ALSO 1C107 0C004 does not control the following: In 0C004, boron equivalent (BE) is defined as the sum of BEz for impurities (excluding BEcarbon since carbon is not considered an impurity) including boron, where: BEZ (ppm) = CF × concentration of element Z in ppm; where CF is the conversion factor =σZ × ABσB × AZ and σB and σZ are the thermal neutron capture cross sections (in barns) for naturally occurring boron and element Z respectively; and AB and AZ are the atomic masses of naturally occurring boron and element Z respectively. 0C005Specially prepared compounds or powders for the manufacture of gaseous diffusion barriers, resistant to corrosion by UF6 (e.g. nickel or alloy containing 60 weight per cent or more nickel, aluminium oxide and fully fluorinated hydrocarbon polymers), having a purity of 99,9 weight per cent or more and a mean particle size of less than 10 micrometres measured by American Society for Testing and Materials (ASTM) B330 standard and a high degree of particle size uniformity.

0CMaterials Note: a.

Four grammes or less of natural uranium or depleted uranium when contained in a sensing component in instruments;

b.

Depleted uranium specially fabricated for the following civil non-nuclear applications:

1. Shielding;

2. Packaging;

3. Ballasts having a mass not greater than 100 kg;

4. Counter-weights having a mass not greater than 100 kg;

c.

Alloys containing less than 5 % thorium;

d.

Ceramic products containing thorium, which have been manufactured for non-nuclear use.

0CMaterials Note:Note:NB:Note 1: a.

Manufactures of graphite having a mass less than 1 kg, other than those specially designed or prepared for use in a nuclear reactor;

b.

Graphite powder.

0DSoftware 0D001Software specially designed or modified for the development, production or use of goods specified in this Category.

0ETechnology 0E001Technology according to the Nuclear Technology Note for the development, production or use of goods specified in this Category.

CATEGORY 1 SPECIAL MATERIALS AND RELATED EQUIPMENT

1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: Technical Note: Note:NB: Technical Notes: 1.2. Technical Note: NB: Technical Note:

1A001Components made from fluorinated compounds, as follows: 1A002Composite structures or laminates, having any of the following: SEE ALSO 1A202, 9A010 AND 9A110 1A003Manufactures of non-fusible aromatic polyimides in film, sheet, tape or ribbon form having any of the following: 1A003 does not control manufactures when coated or laminated with copper and designed for the production of electronic printed circuit boards. For fusible aromatic polyimides in any form, see 1C008.a.3. 1A004Protective and detection equipment and components, other than those specified in military goods controls, as follows: SEE ALSO 2B351 AND 2B352. Trace detection is defined as the capability to detect less than 1 ppm vapour, or 1 mg solid or liquid. 1A004.d. does not control equipment specially designed for laboratory use. 1A004.d. does not control non-contact walk-through security portals. 1A004 does not control: 1A005Body armour, and specially designed components therefor, other than those manufactured to military standards or specifications or to their equivalents in performance. SEE ALSO MILITARY GOODS CONTROLS. For fibrous or filamentary materials used in the manufacture of body armour, see 1C010. 1A005 does not control body armour or protective garments, when accompanying their user for the user’s own personal protection. 1A005 does not control body armour designed to provide frontal protection only from both fragment and blast from non-military explosive devices. 1A006Equipment, specially designed or modified for the disposal of improvised explosive devices, as follows, and specially designed components and accessories therefor: SEE ALSO MILITARY GOODS CONTROLS. Disruptors are devices specially designed for the purpose of preventing the operation of an explosive device by projecting a liquid, solid or frangible projectile. 1A006 does not control equipment when accompanying its operator. 1A007Equipment and devices, specially designed to initiate charges and devices containing energetic materials, by electrical means, as follows: SEE ALSO MILITARY GOODS CONTROLS, 3A229 AND 3A232. The word initiator or igniter is sometimes used in place of the word detonator. For the purpose of 1A007.b. the detonators of concern all utilise a small electrical conductor (bridge, bridge wire, or foil) that explosively vaporises when a fast, high-current electrical pulse is passed through it. In non-slapper types, the exploding conductor starts a chemical detonation in a contacting high explosive material such as PETN (pentaerythritoltetranitrate). In slapper detonators, the explosive vaporisation of the electrical conductor drives a flyer or slapper across a gap, and the impact of the slapper on an explosive starts a chemical detonation. The slapper in some designs is driven by magnetic force. The term exploding foil detonator may refer to either an EB or a slapper-type detonator. 1A008Charges, devices and components, as follows: Shaped charges are explosive charges shaped to focus the effects of the explosive blast. 1A102Resaturated pyrolised carbon-carbon components designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. 1A202Composite structures, other than those specified in 1A002, in the form of tubes and having both of the following characteristics: SEE ALSO 9A010 AND 9A110. 1A225Platinised catalysts specially designed or prepared for promoting the hydrogen isotope exchange reaction between hydrogen and water for the recovery of tritium from heavy water or for the production of heavy water. 1A226Specialised packings which may be used in separating heavy water from ordinary water, having both of the following characteristics: 1A227High-density (lead glass or other) radiation shielding windows, having all of the following characteristics, and specially designed frames therefor: In 1A227 the term cold area means the viewing area of the window exposed to the lowest level of radiation in the design application.

1ASystems, Equipment and Components a.

Seals, gaskets, sealants or fuel bladders, specially designed for aircraft or aerospace use, made from more than 50 % by weight of any of the materials specified in 1C009.b. or 1C009.c.;

b.

Piezoelectric polymers and copolymers, made from vinylidene fluoride (CAS 75-38-7) materials, specified in 1C009.a., having all of the following:

1. In sheet or film form; and

2. With a thickness exceeding 200 μm;

c.Note:

Seals, gaskets, valve seats, bladders or diaphragms, having all of the following: In 1A001.c., missile means complete rocket systems and unmanned aerial vehicle systems.

c.

1. Made from fluoroelastomers containing at least one vinylether group as a constitutional unit; and

2. Specially designed for aircraft, aerospace or missile use.

1ASystems, Equipment and Components N.B: a.

Consisting of an organic matrix and materials specified in 1C010.c., 1C010.d. or 1C010.e.; or

b.Note 1:Note 2:Note 3:Note 4:

Consisting of a metal or carbon matrix, and any of the following: 1A002 does not control composite structures or laminates made from epoxy resin impregnated carbon fibrous or filamentary materials for the repair of civil aircraft structures or laminates, having all of the following: 1A002 does not control semi-finished items, specially designed for purely civilian applications as follows: 1A002.b.1. does not control semi-finished items containing a maximum of two dimensions of interwoven filaments and specially designed for applications as follows: 1A002 does not control finished items specially designed for a specific application.

b.

1. Carbon fibrous or filamentary materials having all of the following:

1. a.

A specific modulus exceeding 10,15 × 106 m; and

b.

A specific tensile strength exceeding 17,7 × 104 m; or

2. Materials specified in 1C010.c.

b.Note 1: a.

An area not exceeding 1 m2;

b.

A length not exceeding 2,5 m; and

c.

A width exceeding 15 mm.

b.Note 1:Note 2:

a.

Sporting goods;

b.

Automotive industry;

c.

Machine tool industry;

d.

Medical applications.

2:Note 3:

a.

Metal heat-treatment furnaces for tempering metals;

b.

Silicon boule production equipment.

a.

A thickness exceeding 0,254 mm; or

b.

Coated or laminated with carbon, graphite, metals or magnetic substances.

1ASystems, Equipment and Components N.B:Note:NB:NB: a.

Gas masks, filter canisters and decontamination equipment therefor, designed or modified for defence against any of the following, and specially designed components therefor:

1. Biological agents adapted for use in war;

2. Radioactive materials adapted for use in war;

3. Chemical warfare (CW) agents; or

4. Riot control agents, including:

4. a.

α-Bromobenzeneacetonitrile, (Bromobenzyl cyanide) (CA) (CAS 5798-79-8);

b.

[(2-chlorophenyl) methylene] propanedinitrile, (o-Chlorobenzylidenemalononitrile) (CS) (CAS 2698-41-1);

c.

2-Chloro-1-phenylethanone, Phenylacyl chloride (ω-chloroacetophenone) (CN) (CAS 532-27-4);

d.

Dibenz-(b,f)-1,4-oxazephine (CR) (CAS 257-07-8);

e.

10-Chloro-5,10-dihydrophenarsazine, (Phenarsazine chloride), (Adamsite), (DM) (CAS 578-94-9);

f.

N-Nonanoylmorpholine, (MPA) (CAS 5299-64-9);

b.

Protective suits, gloves and shoes, specially designed or modified for defence against any of the following:

1. Biological agents adapted for use in war;

2. Radioactive materials adapted for use in war; or

3. Chemical warfare (CW) agents;

c.

Detection systems, specially designed or modified for detection or identification of any of the following, and specially designed components therefor:

1. Biological agents adapted for use in war;

2. Radioactive materials adapted for use in war; or

3. Chemical warfare (CW) agents.

d.

Electronic equipment designed for automatically detecting or identifying the presence of explosives residues and utilising trace detection techniques (e.g. surface acoustic wave, ion mobility spectrometry, differential mobility spectrometry, mass spectrometry).

1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: a.

Personal radiation monitoring dosimeters;

b.

Equipment limited by design or function to protect against hazards specific to residential safety or civil industries, including

1. mining;

2. quarrying;

3. agriculture;

4. pharmaceutical;

5. medical;

6. veterinary;

7. environmental;

8. waste management;

9. food industry.

1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes:

1. 1A004 includes equipment and components that have been identified, successfully tested to national standards or otherwise proven effective, for the detection of or defence against radioactive materials adapted for use in war, biological agents adapted for use in war, chemical warfare agents, simulants or riot control agents, even if such equipment or components are used in civil industries such as mining, quarrying, agriculture, pharmaceuticals, medical, veterinary, environmental, waste management, or the food industry.

2. Simulant is a substance or material that is used in place of toxic agent (chemical or biological) in training, research, testing or evaluation.

1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: a.

Remotely operated vehicles;

b.

Disruptors.

1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: Technical Note: Note:NB: a.

Explosive detonator firing sets designed to drive explosive detonators specified in 1A007.b.;

b.

Electrically driven explosive detonators as follows:

1. Exploding bridge (EB);

2. Exploding bridge wire (EBW);

3. Slapper;

4. Exploding foil initiators (EFI).

1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: Technical Note: Note:NB: Technical Notes: 1.2. a.

Shaped charges having all of the following:

1. Net Explosive Quantity (NEQ) greater than 90 g; and

2. Outer casing diameter equal to or greater than 75 mm;

b.

Linear shaped cutting charges having all of the following, and specially designed components therefor:

1. An explosive load greater than 40 g/m; and

2. A width of 10 mm or more;

c.

Detonating cord with explosive core load greater than 64 g/m;

d.

Cutters, other than those specified in 1A008.b., and severing tools, having a Net Explosive Quantity (NEQ) greater than 3,5 kg.

1ASystems, Equipment and Components N.B:Note:NB:NB: Technical Note: Note 1:Note 2:Note: Technical Notes: NB:NB:Note 1:Note 2:NB: Technical Note: Note:NB: Technical Notes: 1.2. Technical Note: NB: a.

An inside diameter of between 75 mm and 400 mm; and

b.

Made with any of the fibrous or filamentary materials specified in 1C010.a. or b. or 1C210.a. or with carbon prepreg materials specified in 1C210.c.

a.

Made of phosphor bronze mesh chemically treated to improve wettability; and

b.

Designed to be used in vacuum distillation towers.

a.

A cold area greater than 0,09 m2;

b.

A density greater than 3 g/cm3; and

c.

A thickness of 100 mm or greater.

1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note:Note 1:Note 2:Note:NB:

1B001Equipment for the production or inspection of composite structures or laminates specified in 1A002 or fibrous or filamentary materials specified in 1C010, as follows, and specially designed components and accessories therefor: SEE ALSO 1B101 AND 1B201. For the purpose of 1B001, primary servo positioning axes control, under computer program direction, the position of the end effector (i.e. head) in space relative to the work piece at the correct orientation and direction to achieve the desired process. 1B002Equipment for producing metal alloys, metal alloy powder or alloyed materials, specially designed to avoid contamination and specially designed for use in one of the processes specified in 1C002.c.2. SEE ALSO 1B102. 1B003Tools, dies, moulds or fixtures, for superplastic forming or diffusion bonding titanium, aluminium or their alloys, specially designed for the manufacture of any of the following: 1B101Equipment, other than that specified in 1B001, for the production of structural composites as follows; and specially designed components and accessories therefor: SEE ALSO 1B201. Components and accessories specified in 1B101 include moulds, mandrels, dies, fixtures and tooling for the preform pressing, curing, casting, sintering or bonding of composite structures, laminates and manufactures thereof. 1B102Metal powder production equipment, other than that specified in 1B002, and components as follows: SEE ALSO 1B115.b. 1B102 includes: 1B115Equipment, other than that specified in 1B002 or 1B102, for the production of propellant and propellant constituents, as follows, and specially designed components therefor: For equipment specially designed for the production of military goods, see the Military Goods Controls. 1B115 does not control equipment for the production, handling and acceptance testing of boron carbide. 1B116Specially designed nozzles for producing pyrolitically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. 1B117Batch mixers with provision for mixing under vacuum in the range of zero to 13,326 kPa and with temperature control capability of the mixing chamber and having all of the following, and specially designed components therefor: 1B118Continuous mixers with provision for mixing under vacuum in the range of zero to 13,326 kPa and with a temperature control capability of the mixing chamber having any of the following, and specially designed components therefor: 1B119Fluid energy mills usable for grinding or milling substances specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls, and specially designed components therefor. 1B201Filament winding machines, other than those specified in 1B001 or 1B101, and related equipment, as follows: 1B225Electrolytic cells for fluorine production with an output capacity greater than 250 g of fluorine per hour. 1B226Electromagnetic isotope separators designed for, or equipped with, single or multiple ion sources capable of providing a total ion beam current of 50 mA or greater. 1B226 includes separators: 1B227Ammonia synthesis converters or ammonia synthesis units, in which the synthesis gas (nitrogen and hydrogen) is withdrawn from an ammonia/hydrogen high-pressure exchange column and the synthesised ammonia is returned to said column. 1B228Hydrogen-cryogenic distillation columns having all of the following characteristics: 1B229Water-hydrogen sulphide exchange tray columns and internal contactors, as follows: For columns which are specially designed or prepared for the production of heavy water see 0B004. 1B230Pumps capable of circulating solutions of concentrated or dilute potassium amide catalyst in liquid ammonia (KNH2/NH3), having all of the following characteristics: 1B231Tritium facilities or plants, and equipment therefor, as follows: 1B232Turboexpanders or turboexpander-compressor sets having both of the following characteristics: 1B233Lithium isotope separation facilities or plants, and equipment therefor, as follows:

1BTest, Inspection and Production Equipment NB: a.

Filament winding machines, of which the motions for positioning, wrapping and winding fibres are coordinated and programmed in three or more primary servo positioning axes, specially designed for the manufacture of composite structures or laminates, from fibrous or filamentary materials;

b.Note:

Tape-laying machines, of which the motions for positioning and laying tape or sheets are coordinated and programmed in five or more primary servo positioning axes, specially designed for the manufacture of composite airframe or missile structures; In 1B001.b., missile means complete rocket systems and unmanned aerial vehicle systems.

c. Technical Note:

Multidirectional, multidimensional weaving machines or interlacing machines, including adapters and modification kits, specially designed or modified for weaving, interlacing or braiding fibres, for composite structures; For the purposes of 1B001.c., the technique of interlacing includes knitting.

d.

Equipment specially designed or adapted for the production of reinforcement fibres, as follows:

1. Equipment for converting polymeric fibres (such as polyacrylonitrile, rayon, pitch or polycarbosilane) into carbon fibres or silicon carbide fibres, including special equipment to strain the fibre during heating;

2. Equipment for the chemical vapour deposition of elements or compounds, on heated filamentary substrates, to manufacture silicon carbide fibres;

3. Equipment for the wet-spinning of refractory ceramics (such as aluminium oxide);

4. Equipment for converting aluminium containing precursor fibres into alumina fibres by heat treatment;

e.

Equipment for producing prepregs specified in 1C010.e. by the hot melt method;

f.

Non-destructive inspection equipment specially designed for composite materials, as follows:

1. X-ray tomography systems for three dimensional defect inspection;

2. Numerically controlled ultrasonic testing machines of which the motions for positioning transmitters or receivers are simultaneously coordinated and programmed in four or more axes to follow the three dimensional contours of the component under inspection;

g.

Tow-placement machines, of which the motions for positioning and laying tows or sheets are coordinated and programmed in two or more primary servo positioning axes, specially designed for the manufacture of composite airframe or missile structures.

1BTest, Inspection and Production Equipment NB: Technical Note: NB: a.

Airframe or aerospace structures;

b.

Aircraft or aerospace engines; or

c.

Specially designed components for structures specified in 1B003.a. or for engines specified in 1B003.b.

1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note: a.

Filament winding machines or fibre placement machines, of which the motions for positioning, wrapping and winding fibres can be coordinated and programmed in three or more axes, designed to fabricate composite structures or laminates from fibrous or filamentary materials, and coordinating and programming controls;

b.

Tape-laying machines of which the motions for positioning and laying tape and sheets can be coordinated and programmed in two or more axes, designed for the manufacture of composite airframe and missile structures;

c.

Equipment designed or modified for the production of fibrous or filamentary materials as follows:

1. Equipment for converting polymeric fibres (such as polyacrylonitrile, rayon or polycarbosilane) including special provision to strain the fibre during heating;

2. Equipment for the vapour deposition of elements or compounds on heated filament substrates;

3. Equipment for the wet-spinning of refractory ceramics (such as aluminium oxide);

d.Note:

Equipment designed or modified for special fibre surface treatment or for producing prepregs and preforms specified in entry 9C110. 1B101.d. includes rollers, tension stretchers, coating equipment, cutting equipment and clicker dies.

1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB: a.

Metal powder production equipment usable for the production, in a controlled environment, of spherical or atomised materials specified in 1C011.a., 1C011.b., 1C111.a.1., 1C111.a.2. or in the Military Goods Controls.

b.

Specially designed components for production equipment specified in 1B002 or 1B102.a.

1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note: a.

Plasma generators (high frequency arc-jet) usable for obtaining sputtered or spherical metallic powders with organisation of the process in an argon-water environment;

b.

Electroburst equipment usable for obtaining sputtered or spherical metallic powders with organisation of the process in an argon-water environment;

c.

Equipment usable for the production of spherical aluminium powders by powdering a melt in an inert medium (e.g. nitrogen).

a.

Production equipment for the production, handling or acceptance testing of liquid propellants or propellant constituents specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls;

b.Note:

Production equipment for the production, handling, mixing, curing, casting, pressing, machining, extruding or acceptance testing of solid propellants or propellant constituents specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls. 1B115.b. does not control batch mixers, continuous mixers or fluid energy mills. For the control of batch mixers, continuous mixers and fluid energy mills see 1B117, 1B118 and 1B119.

1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note:Note 1:Note 2: a.

A total volumetric capacity of 110 litres or more; and

b.

At least one mixing/kneading shaft mounted off centre.

a.

Two or more mixing/kneading shafts; or

b.

A single rotating shaft which oscillates and having kneading teeth/pins on the shaft as well as inside the casing of the mixing chamber.

a.

Filament winding machines having all of the following characteristics:

1. Having motions for positioning, wrapping, and winding fibres coordinated and programmed in two or more axes;

2. Specially designed to fabricate composite structures or laminates from fibrous or filamentary materials; and

3. Capable of winding cylindrical rotors of diameter between 75 and 400 mm and lengths of 600 mm or greater;

b.

Coordinating and programming controls for the filament winding machines specified in 1B201.a.;

c.

Precision mandrels for the filament winding machines specified in 1B201.a.

1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note:Note 1:Note 2:Note: a.

Capable of enriching stable isotopes;

b.

With the ion sources and collectors both in the magnetic field and those configurations in which they are external to the field.

a.

Designed for operation with internal temperatures of 35 K (– 238 °C) or less;

b.

Designed for operation at an internal pressure of 0,5 to 5 MPa;

c.

Constructed of either:

1. Stainless steel of the 300 series with low sulphur content and with an austenitic ASTM (or equivalent standard) grain size number of 5 or greater; or

2. Equivalent materials which are both cryogenic and H2-compatible; and

d.

With internal diameters of 1 m or greater and effective lengths of 5 m or greater.

1BTest, Inspection and Production Equipment NB: Technical Note: NB:NB:Note:NB:Note:Note 1:Note 2:Note:NB: a.

Water-hydrogen sulphide exchange tray columns, having all of the following characteristics:

1. Can operate at pressures of 2 MPa or greater;

2. Constructed of carbon steel having an austenitic ASTM (or equivalent standard) grain size number of 5 or greater; and

3. With a diameter of 1,8 m or greater;

b. Technical Note:

Internal contactors for the water-hydrogen sulphide exchange tray columns specified in 1B229.a. Internal contactors of the columns are segmented trays which have an effective assembled diameter of 1,8 m or greater, are designed to facilitate countercurrent contacting and are constructed of stainless steels with a carbon content of 0,03 % or less These may be sieve trays, valve trays, bubble cap trays, or turbogrid trays.

a.

Airtight (i.e. hermetically sealed);

b.

A capacity greater than 8,5 m3/h; and

c.

Either of the following characteristics:

1. For concentrated potassium amide solutions (1 % or greater), an operating pressure of 1,5 to 60 MPa; or

2. For dilute potassium amide solutions (less than 1 %), an operating pressure of 20 to 60 MPa.

a.

Facilities or plants for the production, recovery, extraction, concentration, or handling of tritium;

b.

Equipment for tritium facilities or plants, as follows:

1. Hydrogen or helium refrigeration units capable of cooling to 23 K (– 250 °C) or less, with heat removal capacity greater than 150 W;

2. Hydrogen isotope storage or purification systems using metal hydrides as the storage or purification medium.

a.

Designed for operation with an outlet temperature of 35 K (– 238 °C) or less; and

b.

Designed for a throughput of hydrogen gas of 1000 kg/h or greater.

a.

Facilities or plants for the separation of lithium isotopes;

b.

Equipment for the separation of lithium isotopes, as follows:

1. Packed liquid-liquid exchange columns specially designed for lithium amalgams;

2. Mercury or lithium amalgam pumps;

3. Lithium amalgam electrolysis cells;

4. Evaporators for concentrated lithium hydroxide solution.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: Technical Notes: Note:NB:Note 1:Note 2:Note 3:Note 4:

Metals and alloys: Unless provision to the contrary is made, the words metals and alloys in 1C001 to 1C012 cover crude and semi-fabricated forms, as follows: The object of the control should not be defeated by the export of non-listed forms alleged to be finished products but representing in reality crude forms or semi-fabricated forms. 1C001Materials specially designed for use as absorbers of electromagnetic waves, or intrinsically conductive polymers, as follows: SEE ALSO 1C101. 1C002Metal alloys, metal alloy powder and alloyed materials, as follows: SEE ALSO 1C202. 1C002 does not control metal alloys, metal alloy powder and alloyed materials for coating substrates. The metal alloys in 1C002 are those containing a higher percentage by weight of the stated metal than of any other element. Stress-rupture life should be measured in accordance with ASTM standard E-139 or national equivalents. Low cycle fatigue life should be measured in accordance with ASTM Standard E-606 Recommended Practice for Constant-Amplitude Low-Cycle Fatigue Testing or national equivalents. Testing should be axial with an average stress ratio equal to 1 and a stress-concentration factor (Kt) equal to 1. The average stress is defined as maximum stress minus minimum stress divided by maximum stress. 1C003Magnetic metals, of all types and of whatever form, having any of the following: 1C004Uranium titanium alloys or tungsten alloys with a matrix based on iron, nickel or copper, having all of the following: 1C005Superconductive composite conductors in lengths exceeding 100 m or with a mass exceeding 100 g, as follows: 1C006Fluids and lubricating materials, as follows: For the purpose of 1C006: 1C007Ceramic base materials, non-composite ceramic materials, ceramic-matrix composite materials and precursor materials, as follows: SEE ALSO 1C107. 1C008Non-fluorinated polymeric substances as follows: The glass transition temperature (Tg) for 1C008 materials is determined using the method described in ISO 11357-2 (1999) or national equivalents. In addition, for 1C008.a.2. materials, glass transition temperature (Tg) is determined on a PAI test specimen having initially been cured at a minimum temperature of 310 °C for a minimum of 15 minutes. 1C009Unprocessed fluorinated compounds as follows: 1C010Fibrous or filamentary materials, as follows: SEE ALSO 1C210 AND 9C110. 1C011Metals and compounds, as follows: SEE ALSO MILITARY GOODS CONTROLS AND 1C111. 1C012Materials as follows: These materials are typically used for nuclear heat sources. 1C101Materials and devices for reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures, other than those specified in 1C001, usable in missiles, missile subsystems or unmanned aerial vehicles specified in 9A012. 1C101 includes: 1C101 does not include coatings when specially used for the thermal control of satellites. In 1C101 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 1C102Resaturated pyrolised carbon-carbon materials designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. 1C107Graphite and ceramic materials, other than those specified in 1C007, as follows: 1C111Propellants and constituent chemicals for propellants, other than those specified in 1C011, as follows: 1C116Maraging steels having an ultimate tensile strength of 1500 MPa or greater, measured at 293 K (20 °C), in the form of sheet, plate or tubing with a wall or plate thickness equal to or less than 5 mm. SEE ALSO 1C216. Maraging steels are iron alloys generally characterised by high nickel, very low carbon content and the use of substitutional elements or precipitates to produce strengthening and age-hardening of the alloy. 1C117Materials for the fabrication of missiles components as follows In 1C117 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 1C118Titanium-stabilised duplex stainless steel (Ti-DSS) having all of the following: 1C202Alloys, other than those specified in 1C002.b.3. or.b.4., as follows: The phrase alloys capable of encompasses alloys before or after heat treatment. 1C210Fibrous or filamentary materials or prepregs, other than those specified in 1C010.a., b. or e., as follows: In 1C210, fibrous or filamentary materials is restricted to continuous monofilaments, yarns, rovings, tows or tapes. 1C216Maraging steel, other than that specified in 1C116, capable of an ultimate tensile strength of 2050 MPa or more, at 293 K (20 °C). 1C216 does not control forms in which all linear dimensions are 75 mm or less. The phrase maraging steel capable of encompasses maraging steel before or after heat treatment. 1C225Boron enriched in the boron-10 (10B) isotope to greater than its natural isotopic abundance, as follows: elemental boron, compounds, mixtures containing boron, manufactures thereof, waste or scrap of any of the foregoing. In 1C225 mixtures containing boron include boron loaded materials. The natural isotopic abundance of boron-10 is approximately 18,5 weight per cent (20 atom per cent). 1C226Tungsten, tungsten carbide, and alloys containing more than 90 % tungsten by weight, other than that specified by 1C117, having both of the following characteristics: 1C226 does not control manufactures specially designed as weights or gamma-ray collimators. 1C227Calcium having both of the following characteristics: 1C228Magnesium having both of the following characteristics: 1C229Bismuth having both of the following characteristics: 1C230Beryllium metal, alloys containing more than 50 % beryllium by weight, beryllium compounds, manufactures thereof, and waste or scrap of any of the foregoing, other than that specified in the Military Goods Controls. SEE ALSO MILITARY GOODS CONTROLS. 1C230 does not control the following: 1C231Hafnium metal, alloys containing more than 60 % hafnium by weight, hafnium compounds containing more than 60 % hafnium by weight, manufactures thereof, and waste or scrap of any of the foregoing. 1C232Helium-3 (3He), mixtures containing helium-3, and products or devices containing any of the foregoing. 1C232 does not control a product or device containing less than 1 g of helium-3. 1C233Lithium enriched in the lithium-6 (6Li) isotope to greater than its natural isotopic abundance, and products or devices containing enriched lithium, as follows: elemental lithium, alloys, compounds, mixtures containing lithium, manufactures thereof, waste or scrap of any of the foregoing. 1C233 does not control thermoluminescent dosimeters. The natural isotopic abundance of lithium-6 is approximately 6,5 weight per cent (7,5 atom per cent). 1C234Zirconium with a hafnium content of less than 1 part hafnium to 500 parts zirconium by weight, as follows: metal, alloys containing more than 50 % zirconium by weight, compounds, manufactures thereof, waste or scrap of any of the foregoing. 1C234 does not control zirconium in the form of foil having a thickness of 0,10 mm or less. 1C235Tritium, tritium compounds, mixtures containing tritium in which the ratio of tritium to hydrogen atoms exceeds 1 part in 1000, and products or devices containing any of the foregoing. 1C235 does not control a product or device containing less than 1,48 × 103 GBq (40 Ci) of tritium. 1C236Alpha-emitting radionuclides having an alpha half-life of 10 days or greater but less than 200 years, in the following forms: 1C236 does not control a product or device containing less than 3,7 GBq (100 millicuries) of alpha activity. 1C237Radium-226 (226Ra), radium-226 alloys, radium-226 compounds, mixtures containing radium-226, manufactures therof, and products or devices containing any of the foregoing. 1C237 does not control the following: 1C238Chlorine trifluoride (ClF3). 1C239High explosives, other than those specified in the Military Goods Controls, or substances or mixtures containing more than 2 % by weight thereof, with a crystal density greater than 1,8 g/cm3 and having a detonation velocity greater than 8000 m/s. 1C240Nickel powder and porous nickel metal, other than those specified in 0C005, as follows: 1C240 does not control the following: 1C240.b. refers to porous metal formed by compacting and sintering the materials in 1C240.a. to form a metal material with fine pores interconnected throughout the structure. 1C350Chemicals, which may be used as precursors for toxic chemical agents, as follows, and chemical mixtures containing one or more thereof: SEE ALSO MILITARY GOODS CONTROLS AND 1C450. For exports to States not Party to the Chemical Weapons Convention, 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350.1, .3, .5, .11, .12, .13, .17, . 18, .21, .22, .26, .27, .28, .31, .32, .33, .34, .35, .36, .54, .55, .56, .57 and .63 in which no individually specified chemical constitutes more than 10 % by the weight of the mixture. For exports to States Party to the Chemical Weapons Convention, 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350.1, .3, .5, .11, .12, .13, .17, . 18, .21, .22, .26, .27, .28, .31, .32, .33, .34, .35, .36, .54, .55, .56, .57 and .63 in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350.2, .6, .7, .8, .9, .10, .14, .15, .16, .19, .20, .24, .25, .30, .37, .38, .39, .40, .41, .42, .43, .44, .45, .46, .47, .48, .49, .50, .51, .52, .53, .58, .59, .60, .61 and .62 in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C350 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use. 1C351Human pathogens, zoonoses and toxins, as follows: 1C351 does not control vaccines or immunotoxins. 1C352Animal pathogens, as follows: 1C352 does not control vaccines. 1C353Genetic elements and genetically modified organisms, as follows: 1C353 does not apply to nucleic acid sequences associated with the pathogenicity of enterohaemorrhagic Escherichia coli, serotype O157 and other verotoxin producing strains, other than those coding for the verotoxin, or for its sub-units. 1C354Plant pathogens, as follows: 1C450Toxic chemicals and toxic chemical precursors, as follows, and chemical mixtures containing one or more thereof: SEE ALSO ENTRY 1C350, 1C351.d. AND MILITARY GOODS CONTROLS. For exports to States not Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.b.1., .b.2., .b.3., .b.4., .b.5. and .b.6. in which no individually specified chemical constitutes more than 10 % by the weight of the mixture. For exports to States Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.b.1., .b.2., .b.3., .b.4., .b.5. and .b.6. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entry 1C450.b.8. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C450 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use.

Crude forms: Anodes, balls, bars (including notched bars and wire bars), billets, blocks, blooms, brickets, cakes, cathodes, crystals, cubes, dice, grains, granules, ingots, lumps, pellets, pigs, powder, rondelles, shot, slabs, slugs, sponge, sticks;

Semi-fabricated forms (whether or not coated, plated, drilled or punched):

1CMaterials Technical Note:

pt_2 a.

Wrought or worked materials fabricated by rolling, drawing, extruding, forging, impact extruding, pressing, graining, atomising, and grinding, i.e.: angles, channels, circles, discs, dust, flakes, foils and leaf, forging, plate, powder, pressings and stampings, ribbons, rings, rods (including bare welding rods, wire rods, and rolled wire), sections, shapes, sheets, strip, pipe and tubes (including tube rounds, squares, and hollows), drawn or extruded wire;

b.

Cast material produced by casting in sand, die, metal, plaster or other types of moulds, including high pressure castings, sintered forms, and forms made by powder metallurgy.

1CMaterials Technical Note: NB:

a.Note 1:Note 2:

Materials for absorbing frequencies exceeding 2 × 108 Hz but less than 3 × 1012 Hz; 1C001.a. does not control: Nothing in Note 1 to 1C001.a. releases magnetic materials to provide absorption when contained in paint.

a.Note 1: a.

Hair type absorbers, constructed of natural or synthetic fibres, with non-magnetic loading to provide absorption;

b.

Absorbers having no magnetic loss and whose incident surface is non-planar in shape, including pyramids, cones, wedges and convoluted surfaces;

c.

Planar absorbers, having all of the following:

1. Technical Note:

Made from any of the following: Absorption test samples for 1C001.a. Note: 1.c.1. should be a square at least 5 wavelengths of the centre frequency on a side and positioned in the far field of the radiating element.

1. a.

Plastic foam materials (flexible or non-flexible) with carbon-loading, or organic materials, including binders, providing more than 5 % echo compared with metal over a bandwidth exceeding ± 15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 450 K (177 °C); or

b.

Ceramic materials providing more than 20 % echo compared with metal over a bandwidth exceeding ± 15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 800 K (527 ° C);

2. Tensile strength less than 7 × 106 N/m2; and

3. Compressive strength less than 14 × 106 N/m2;

d.

Planar absorbers made of sintered ferrite, having all of the following:

1. A specific gravity exceeding 4,4; and

2. A maximum operating temperature of 548 K (275 °C).

b.

Materials for absorbing frequencies exceeding 1,5 × 1014 Hz but less than 3,7 × 1014 Hz and not transparent to visible light;

c. Technical Note:

Intrinsically conductive polymeric materials with a bulk electrical conductivity exceeding 10000 S/m (Siemens per metre) or a sheet (surface) resistivity of less than 100 ohms/square, based on any of the following polymers: Bulk electrical conductivity and sheet (surface) resistivity should be determined using ASTM D-257 or national equivalents.

c.

1. Polyaniline;

2. Polypyrrole;

3. Polythiophene;

4. Poly phenylene-vinylene; or

5. Poly thienylene-vinylene.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. a.

Aluminides, as follows:

1. Nickel aluminides containing a minimum of 15 % by weight aluminium, a maximum of 38 % by weight aluminium and at least one additional alloying element;

2. Titanium aluminides containing 10 % by weight or more aluminium and at least one additional alloying element;

b.

Metal alloys, as follows, made from the powder or particulate material specified in 1C002.c.:

1. Nickel alloys having any of the following:

1. a.

A stress-rupture life of 10000 hours or longer at 923 K (650 °C) at a stress of 676 MPa; or

b.

A low cycle fatigue life of 10000 cycles or more at 823 K (550 °C) at a maximum stress of 1095 MPa;

2. Niobium alloys having any of the following:

2. a.

A stress-rupture life of 10000 hours or longer at 1073 K (800 °C) at a stress of 400 MPa; or

b.

A low cycle fatigue life of 10000 cycles or more at 973 K (700 °C) at a maximum stress of 700 MPa;

3. Titanium alloys having any of the following:

3. a.

A stress-rupture life of 10000 hours or longer at 723 K (450 °C) at a stress of 200 MPa; or

b.

A low cycle fatigue life of 10000 cycles or more at 723 K (450 °C) at a maximum stress of 400 MPa;

4. Aluminium alloys having any of the following:

4. a.

A tensile strength of 240 MPa or more at 473 K (200 °C); or

b.

A tensile strength of 415 MPa or more at 298 K (25 °C);

5. Magnesium alloys having all of the following:

5. a.

A tensile strength of 345 MPa or more; and

b.

A corrosion rate of less than 1 mm/year in 3 % sodium chloride aqueous solution measured in accordance with ASTM standard G-31 or national equivalents;

c.

Metal alloy powder or particulate material, having all of the following:

1. Technical Note:

Made from any of the following composition systems: X in the following equals one or more alloying elements.

a.

Nickel alloys (Ni-Al-X, Ni-X-Al) qualified for turbine engine parts or components, i.e. with less than 3 non-metallic particles (introduced during the manufacturing process) larger than 100 μm in 109 alloy particles;

b.

Niobium alloys (Nb-Al-X or Nb-X-Al, Nb-Si-X or Nb-X-Si, Nb-Ti-X or Nb-X-Ti);

c.

Titanium alloys (Ti-Al-X or Ti-X-Al);

d.

Aluminium alloys (Al-Mg-X or Al-X-Mg, Al-Zn-X or Al-X-Zn, Al-Fe-X or Al-X-Fe); or

e.

Magnesium alloys (Mg-Al-X or Mg-X-Al);

2. Made in a controlled environment by any of the following processes:

2. a.

Vacuum atomisation;

b.

Gas atomisation;

c.

Rotary atomisation;

d.

Splat quenching;

e.

Melt spinning and comminution;

f.

Melt extraction and comminution; or

g.

Mechanical alloying; and

3. Capable of forming materials specified in 1C002.a. or 1C002.b.

d.

Alloyed materials having all of the following:

1. Made from any of the composition systems specified in 1C002.c.1.;

2. In the form of uncomminuted flakes, ribbons or thin rods; and

3. Produced in a controlled environment by any of the following:

3. a.

Splat quenching;

b.

Melt spinning; or

c.

Melt extraction.

a. Technical Note:

Initial relative permeability of 120000 or more and a thickness of 0,05 mm or less; Measurement of initial relative permeability must be performed on fully annealed materials.

b.

Magnetostrictive alloys having any of the following:

1. A saturation magnetostriction of more than 5 × 10–4; or

2. A magnetomechanical coupling factor (k) of more than 0,8; or

c. Technical Note:

Amorphous or nanocrystalline alloy strips, having all of the following: Nanocrystalline materials in 1C003.c. are those materials having a crystal grain size of 50 nm or less, as determined by X-ray diffraction.

c.

1. A composition having a minimum of 75 % by weight of iron, cobalt or nickel;

2. A saturation magnetic induction (Bs) of 1,6 T or more; and

3. Any of the following:

3. a.

A strip thickness of 0,02 mm or less; or

b.

An electrical resistivity of 2 × 10–4 ohm cm or more.

a.

A density exceeding 17,5 g/cm3;

b.

An elastic limit exceeding 880 MPa;

c.

An ultimate tensile strength exceeding 1270 MPa; and

d.

An elongation exceeding 8 %.

a.

Superconductive composite conductors containing one or more niobium-titanium filaments, having both of the following:

1. Embedded in a matrix other than a copper or copper-based mixed matrix; and

2. Having a cross-section area less than 0,28 × 10–4 mm2 (6 μm in diameter for circular filaments);

b.

Superconductive composite conductors consisting of one or more superconductive filaments other than niobium-titanium, having all of the following:

1. A critical temperature at zero magnetic induction exceeding 9,85 K (– 263,31 °C); and

2. Remaining in the superconductive state at a temperature of 4,2 K (– 268,96 °C) when exposed to a magnetic field oriented in any direction perpendicular to the longitudinal axis of conductor and corresponding to a magnetic induction of 12 T with critical current density exceeding 1750 A/mm2 on overall cross-section of the conductor;

c. Technical Note:

Superconductive composite conductors consisting of one or more superconductive filaments which remain superconductive above 115 K (– 158,16 °C). For the purpose of 1C005 filaments may be in wire, cylinder, film, tape or ribbon form.

a.

Hydraulic fluids containing, as their principal ingredients, any of the following:

1. Technical Note:

Synthetic silahydrocarbon oils having all of the following: For the purpose of 1C006.a.1., silahydrocarbon oils contain exclusively silicon, hydrogen and carbon.

a.

A flash point exceeding 477 K (204 °C);

b.

A pour point at 239 K (– 34 °C) or less;

c.

A viscosity index of 75 or more; and

d.

A thermal stability at 616 K (343 °C); or

2. Technical Note:

Chlorofluorocarbons having all of the following: For the purpose of 1C006.a.2., chlorofluorocarbons contain exclusively carbon, fluorine and chlorine.

a.

No flash point;

b.

An autogenous ignition temperature exceeding 977 K (704 °C);

c.

A pour point at 219 K (– 54 °C) or less;

d.

A viscosity index of 80 or more; and

e.

A boiling point at 473 K (200 °C) or higher;

b.

Lubricating materials containing, as their principal ingredients, any of the following:

1. Phenylene or alkylphenylene ethers or thio-ethers, or their mixtures, containing more than two ether or thio-ether functions or mixtures thereof; or

2. Fluorinated silicone fluids with a kinematic viscosity of less than 5000 mm2/s (5000 centistokes) measured at 298 K (25 °C);

c.

Damping or flotation fluids having all of the following:

1. Purity exceeding 99,8 %;

2. Containing less than 25 particles of 200 μm or larger in size per 100 ml; and

3. Made from at least 85 % of any of the following:

3. a.

Dibromotetrafluoroethane (CAS 25497-30-7, 124-73-2, 27336-23-8);

b.

Polychlorotrifluoroethylene (oily and waxy modifications only); or

c.

Polybromotrifluoroethylene;

d.

Fluorocarbon electronic cooling fluids having all of the following:

1. Containing 85 % by weight or more of any of the following, or mixtures thereof:

1. a.

Monomeric forms of perfluoropolyalkylether-triazines or perfluoroaliphatic-ethers;

b.

Perfluoroalkylamines;

c.

Perfluorocycloalkanes; or

d.

Perfluoroalkanes;

2. Density at 298 K (25 °C) of 1,5 g/ml or more;

3. In a liquid state at 273 K (0 °C); and

4. Containing 60 % or more by weight of fluorine.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note:

1. Flash point is determined using the Cleveland Open Cup Method described in ASTM D-92 or national equivalents;

2. Pour point is determined using the method described in ASTM D-97 or national equivalents;

3. Viscosity index is determined using the method described in ASTM D-2270 or national equivalents;

4. Thermal stability is determined by the following test procedure or national equivalents: Twenty ml of the fluid under test is placed in a 46 ml type 317 stainless steel chamber containing one each of 12,5 mm (nominal) diameter balls of M-10 tool steel, 52100 steel and naval bronze (60 % Cu, 39 % Zn, 0,75 % Sn); The chamber is purged with nitrogen, sealed at atmospheric pressure and the temperature raised to and maintained at 644 ± 6 K (371 ± 6 °C) for six hours; The specimen will be considered thermally stable if, on completion of the above procedure, all of the following conditions are met:

4. a.

The loss in weight of each ball is less than 10 mg/mm2 of ball surface;

b.

The change in original viscosity as determined at 311 K (38 °C) is less than 25 %; and

c.

The total acid or base number is less than 0,40;

5. Autogenous ignition temperature is determined using the method described in ASTM E-659 or national equivalents.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: a.

Base materials of single or complex borides of titanium, having total metallic impurities, excluding intentional additions, of less than 5000 ppm, an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm;

b.Note:

Non-composite ceramic materials in crude or semi-fabricated form, composed of borides of titanium with a density of 98 % or more of the theoretical density; 1C007.b. does not control abrasives.

c.

Ceramic-ceramic composite materials with a glass or oxide-matrix and reinforced with fibres having all of the following:

1. Made from any of the following materials:

1. a.

Si-N;

b.

Si-C;

c.

Si-Al-O-N; or

d.

Si-O-N; and

2. Having a specific tensile strength exceeding 12,7 × 103 m;

d.

Ceramic-ceramic composite materials, with or without a continuous metallic phase, incorporating particles, whiskers or fibres, where carbides or nitrides of silicon, zirconium or boron form the matrix;

e.

Precursor materials (i.e. special purpose polymeric or metallo-organic materials) for producing any phase or phases of the materials specified in 1C007.c., as follows:

1. Polydiorganosilanes (for producing silicon carbide);

2. Polysilazanes (for producing silicon nitride);

3. Polycarbosilazanes (for producing ceramics with silicon, carbon and nitrogen components);

f.Note:

Ceramic-ceramic composite materials with an oxide or glass matrix reinforced with continuous fibres from any of the following systems: 1C007.f. does not control composites containing fibres from these systems with a fibre tensile strength of less than 700 MPa at 1273 K (1000 °C) or fibre tensile creep resistance of more than 1 % creep strain at 100 MPa load and 1273 K (1000 °C) for 100 hours.

f.

1. Al2O3 (CAS 1344-28-1); or

2. Si-C-N.

a.Note:NB:

Imides, as follows: 1C008.a. controls substances in liquid or solid fusible form, including resin, powder, pellet, film, sheet, tape or ribbon. For non-fusible aromatic polyimides in film, sheet, tape or ribbon form, see 1A003.

a.

1. Bismaleimides;

2. Aromatic polyamide-imides (PAI) having a glass transition temperature (Tg) exceeding 563 K (290 °C);

3. Aromatic polyimides;

4. Aromatic polyetherimides having a glass transition temperature (Tg) exceeding 513 K (240 °C);

b.

Thermoplastic liquid crystal copolymers having a heat distortion temperature exceeding 523 K (250 °C) measured according to ISO 75-2 (2004), method A or national equivalents, with a load of 1,80 N/mm2 and composed of:

1. Any of the following compounds:

1. a.

Phenylene, biphenylene or naphthalene; or

b.

Methyl, tertiary-butyl or phenyl substituted phenylene, biphenylene or naphthalene; and

2. Any of the following acids:

2. a.

Terephthalic acid (CAS 100-21-0);

b.

6-hydroxy-2 naphthoic acid (CAS 16712-64-4); or

c.

4-hydroxybenzoic acid (CAS 99-96-7);

c.

Not used;

d.

Polyarylene ketones;

e.

Polyarylene sulphides, where the arylene group is biphenylene, triphenylene or combinations thereof;

f.

Polybiphenylenethersulphone having a glass transition temperature (Tg) exceeding 513 K (240 °C).

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: a.

Copolymers of vinylidene fluoride having 75 % or more beta crystalline structure without stretching;

b.

Fluorinated polyimides containing 10 % by weight or more of combined fluorine;

c.

Fluorinated phosphazene elastomers containing 30 % by weight or more of combined fluorine.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB: a.Note:

Organic fibrous or filamentary materials, having both of the following: 1C010.a. does not control polyethylene.

a.

1. Specific modulus exceeding 12,7 × 106 m; and

2. Specific tensile strength exceeding 23,5 × 104 m;

b.Note: Technical Note:

Carbon fibrous or filamentary materials, having both of the following: 1C010.b. does not control: Properties for materials described in 1C010.b. should be determined using SACMA recommended methods SRM 12 to 17, ISO 10618 (2004) 10.2.1 Method A or national equivalent tow tests and based on lot average.

b.

1. Specific modulus exceeding 14,65 × 106 m; and

2. Specific tensile strength exceeding 26,82 × 104 m;

b.Note:

a.

Fibrous or filamentary materials, for the repair of civil aircraft structures or laminates, having all of the following:

1. An area not exceeding 1 m2;

2. A length not exceeding 2,5 m; and

3. A width exceeding 15 mm.

b.

Mechanically chopped, milled or cut carbon fibrous or filamentary materials 25,0 mm or less in length.

c.Note:

Inorganic fibrous or filamentary materials, having both of the following: 1C010.c. does not control:

c.

1. Specific modulus exceeding 2,54 × 106 m; and

2. Melting, softening, decomposition or sublimation point exceeding 1922 K (1649 °C) in an inert environment;

c.Note:

a.

Discontinuous, multiphase, polycrystalline alumina fibres in chopped fibre or random mat form, containing 3 % by weight or more silica, with a specific modulus of less than 10 × 106 m;

b.

Molybdenum and molybdenum alloy fibres;

c.

Boron fibres;

d.

Discontinuous ceramic fibres with a melting, softening, decomposition or sublimation point lower than 2043 K (1770 °C) in an inert environment.

d.

Fibrous or filamentary materials, having any of the following:

1. Composed of any of the following:

1. a.

Polyetherimides specified in 1C008.a.; or

b.

Materials specified in 1C008.b. to 1C008.f.; or

2. Composed of materials specified in 1C010.d.1.a. or 1C010.d.1.b. and commingled with other fibres specified in 1C010.a., 1C010.b. or 1C010.c.;

e.

Fully or partially resin-impregnated or pitch-impregnated fibrous or filamentary materials (prepregs), metal or carbon-coated fibrous or filamentary materials (preforms) or carbon fibre preforms, having all of the following:

1. Having any of the following:

1. a.

Inorganic fibrous or filamentary materials specified in 1C010.c.; or

b.

Organic or carbon fibrous or filamentary materials, having all of the following:

1. Specific modulus exceeding 10,15 × 106 m; and

2. Specific tensile strength exceeding 17,7 × 104 m; and

2.Note 1:Note 2: Technical Note:

Having any of the following: Metal or carbon-coated fibrous or filamentary materials (preforms) or carbon fibre preforms, not impregnated with resin or pitch, are specified by fibrous or filamentary materials in 1C010.a., 1C010.b. or 1C010.c. 1C010.e. does not control: The Dynamic Mechanical Analysis glass transition temperature (DMA Tg) for materials specified by 1C010.e. is determined using the method described in ASTM D 7028-07, or equivalent national standard, on a dry test specimen. In the case of thermoset materials, degree of cure of a dry test specimen shall be a minimum of 90 % as defined by ASTM E 2160-04 or equivalent national standard.

2. a.

Resin or pitch specified in 1C008 or 1C009.b.;

b.

Dynamic Mechanical Analysis glass transition temperature (DMA Tg) equal to or exceeding 453 K (180 °C) and having a phenolic resin; or

c.

Dynamic Mechanical Analysis glass transition temperature (DMA Tg) equal to or exceeding 505 K (232 °C) and having a resin or pitch, not specified in 1C008 or 1C009.b., and not being a phenolic resin;

2.Note 1:Note 2:

a.

Epoxy resin matrix impregnated carbon fibrous or filamentary materials (prepregs) for the repair of civil aircraft structures or laminates, having all the following;

1. An area not exceeding 1 m2;

2. A length not exceeding 2,5 m; and

3. A width exceeding 15 mm.

b.

Fully or partially resin-impregnated or pitch-impregnated mechanically chopped, milled or cut carbon fibrous or filamentary materials 25,0 mm or less in length when using a resin or pitch other than those specified by 1C008 or 1C009.b.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: a. Technical Note: Note:

Metals in particle sizes of less than 60 μm whether spherical, atomised, spheroidal, flaked or ground, manufactured from material consisting of 99 % or more of zirconium, magnesium and alloys thereof; The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium. The metals or alloys specified in 1C011.a. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium.

b.

Boron or boron alloys, with a particle size of 60 μm or less, as follows:

1. Boron with a purity of 85 % by weight or more;

2.Note: Boron alloys with a boron content of 85 % by weight or more; The metals or alloys specified in 1C011.b. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium.

c.

Guanidine nitrate (CAS 506-93-4);

d.NB:

Nitroguanidine (NQ) (CAS 556-88-7). See also Military Goods Controls for metal powders mixed with other substances to form a mixture formulated for military purposes.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: a.Note:

Plutonium in any form with a plutonium isotopic assay of plutonium-238 of more than 50 % by weight; 1C012.a. does not control:

a.

Shipments with a plutonium content of 1 g or less;

b.

Shipments of 3 effective grammes or less when contained in a sensing component in instruments.

b.Note:

Previously separated neptunium-237 in any form. 1C012.b. does not control shipments with a neptunium-237 content of 1 g or less.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1: a.

Structural materials and coatings specially designed for reduced radar reflectivity;

b.

Coatings, including paints, specially designed for reduced or tailored reflectivity or emissivity in the microwave, infrared or ultraviolet regions of the electromagnetic spectrum.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: a.NB:

Fine grain graphites with a bulk density of 1,72 g/cm3 or greater, measured at 288 K (15 °C), and having a grain size of 100 μm or less, usable for rocket nozzles and re-entry vehicle nose tips, which can be machined to any of the following products: See also 0C004

a.

1. Cylinders having a diameter of 120 mm or greater and a length of 50 mm or greater;

2. Tubes having an inner diameter of 65 mm or greater and a wall thickness of 25 mm or greater and a length of 50 mm or greater; or

3. Blocks having a size of 120 mm × 120 mm × 50 mm or greater;

b.NB:

Pyrolytic or fibrous reinforced graphites, usable for rocket nozzles and reentry vehicle nose tips usable in missiles, space launch vehicles specified in 9A004 or sounding rockets specified in 9A104; See also 0C004

c.

Ceramic composite materials (dielectric constant less than 6 at any frequency from 100 MHz to 100 GHz) for use in radomes usable in missiles, space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

d.

Bulk machinable silicon-carbide reinforced unfired ceramic, usable for nose tips usable in missiles, space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

e.

Reinforced silicon-carbide ceramic composites, usable for nose tips, reentry vehicles and nozzle flaps usable in missiles, space launch vehicles specified in 9A004 or sounding rockets specified in 9A104.

a.

Propulsive substances:

1. Technical Note:

Spherical aluminium powder, other than that specified in the Military Goods Controls, with particles of uniform diameter of less than 200 μm and an aluminium content of 97 % by weight or more, if at least 10 % of the total weight is made up of particles of less than 63 μm, according to ISO 2591:1988 or national equivalents; A particle size of 63 μm (ISO R-565) corresponds to 250 mesh (Tyler) or 230 mesh (ASTM standard E-11).

2. Technical Note:

Metal fuels, other than that specified in the Military Goods Controls, in particle sizes of less than 60 μm, whether spherical, atomised, spheroidal, flaked or ground, consisting 97 % by weight or more of any of the following: The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium.

2. a.

Zirconium;

b.

Beryllium;

c.

Magnesium; or

d.

Alloys of the metals specified in a. to c. above;

3. Oxidiser substances usable in liquid propellant rocket engines as follows:

3. a.

Dinitrogen trioxide (CAS 10544-73-7);

b.

Nitrogen dioxide (CAS 10102-44-0)/dinitrogen tetroxide (CAS 10544-72-6);

c.

Dinitrogen pentoxide (CAS 10102-03-1);

d. Technical Note:

Mixed Oxides of Nitrogen (MON); Mixed Oxides of Nitrogen (MON) are solutions of Nitric Oxide (NO) in Dinitrogen Tetroxide/Nitrogen Dioxide (N2O4/NO2) that can be used in missile systems. There are a range of compositions that can be denoted as MONi or MONij, where i and j are integers representing the percentage of Nitric Oxide in the mixture (e.g. MON3 contains 3 % Nitric Oxide, MON25 25 % Nitric Oxide. An upper limit is MON40, 40 % by weight).

e.

SEE MILITARY GOODS CONTROLS FOR Inhibited Red Fuming Nitric Acid (IRFNA);

f.

SEE MILITARY GOODS CONTROLS AND 1C238 FOR Compounds composed of fluorine and one or more of other halogens, oxygen or nitrogen;

4.NB: Hydrazine derivatives as follows: SEE ALSO MILITARY GOODS CONTROLS.

4.NB: a.

Trimethylhydrazine (CAS 1741-01-1);

b.

Tetramethylhydrazine (CAS 6415-12-9);

c.

N,N diallylhydrazine;

d.

Allylhydrazine (CAS 7422-78-8);

e.

Ethylene dihydrazine;

f.

Monomethylhydrazine dinitrate;

g.

Unsymmetrical dimethylhydrazine nitrate;

h.

Hydrazinium azide (CAS 14546-44-2);

i.

Dimethylhydrazinium azide;

j.

Hydrazinium dinitrate;

k.

Diimido oxalic acid dihydrazine (CAS 3457-37-2);

l.

2-hydroxyethylhydrazine nitrate (HEHN);

m.

See Military Goods Controls for Hydrazinium perchlorate;

n.

Hydrazinium diperchlorate (CAS 13812-39-0);

o.

Methylhydrazine nitrate (MHN);

p.

Diethylhydrazine nitrate (DEHN);

q.

3,6-dihydrazino tetrazine nitrate (1,4-dihydrazine nitrate) (DHTN);

5. Technical Note:

High energy density materials, other than that specified in the Military Goods Controls, usable in missiles or unmanned aerial vehicles specified in 9A012; In 1C111.a.5. missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

5. a.

Mixed fuel that incorporate both solid and liquid fuels, such as boron slurry, having a mass-based energy density of 40 × 106 J/kg or greater;

b.Note:

Other high energy density fuels and fuel additives (e.g. cubane, ionic solutions, JP-10) having a volume-based energy density of 37,5 × 109 J/m3 or greater, measured at 20 °C and one atmosphere (101,325 kPa) pressure; 1C111.a.5.b. does not control fossil refined fuels and biofules produced form vegetables, including fuels for engines certified for use in civil aviation, unless specially formulated for missiles or unmanned aerial vehicles specified in 9A012.

b.

Polymeric substances:

1. Carboxy-terminated polybutadiene (including carboxyl-terminated polybutadiene) (CTPB);

2. Hydroxy-terminated polybutadiene (included hydroxyl-terminated polybutadiene) (HTPB), other than that specified in the Military Goods Controls;

3. Polybutadiene-acrylic acid (PBAA);

4. Polybutadiene-acrylic acid-acrylonitrile (PBAN);

5. Technical Note:

Polytetrahydrofuran polyethylene glycol (TPEG); Polytetrahydrofuran polyethylene glycol (TPEG) is a block co-polymer of poly 1,4-Butanediol and polyethylene glycol (PEG).

c.Note:

Other propellant additives and agents: For propellants and constituent chemicals for propellants not specified in 1C111, see the Military Goods Controls.

c.

1. SEE MILITARY GOODS CONTROLS FOR Carboranes, decaboranes, pentaboranes and derivatives thereof;

2. Triethylene glycol dinitrate (TEGDN) (CAS 111-22-8);

3. 2-Nitrodiphenylamine (CAS 119-75-5);

4. Trimethylolethane trinitrate (TMETN) (CAS 3032-55-1);

5. Diethylene glycol dinitrate (DEGDN) (CAS 693-21-0);

6.Note: Ferrocene derivatives as follows: 1C111.c.6.o. does not control ferrocene derivatives that contain a six carbon aromatic functional group attached to the ferrocene molecule.

6. a.

See Military Goods Controls for catocene;

b.

Ethyl ferrocene (CAS 1273-89-8);

c.

Propyl ferrocene;

d.

See Military Goods Controls for n-butyl ferrocene;

e.

Pentyl ferrocene (CAS 1274-00-6);

f.

Dicyclopentyl ferrocene;

g.

Dicyclohexyl ferrocene;

h.

Diethyl ferrocene (CAS 1273-97-8);

i.

Dipropyl ferrocene;

j.

Dibutyl ferrocene (CAS 1274-08-4);

k.

Dihexyl ferrocene (CAS 93894-59-8);

l.

Acetyl ferrocene (CAS 1271-55-2) / 1,1’-diacetyl ferrocene (CAS 1273-94-5);

m.

See Military Goods Controls for ferrocene Carboxylic acids;

n.

See Military Goods Controls for butacene;

o.

Other ferrocene derivatives usable as rocket propellant burning rate modifiers, other than those specified in the Military Goods Controls.

7. 4,5 diazidomethyl-2-methyl-1,2,3-triazole (iso- DAMTR), other than that specified in the Military Goods Controls.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: a.

Tungsten and alloys in particulate form with a tungsten content of 97 % by weight or more and a particle size of 50 × 10–6 m (50 μm) or less;

b.

Molybdenum and alloys in particulate form with a molybdenum content of 97 % by weight or more and a particle size of 50 × 10–6 m (50 μm) or less;

c.

Tungsten materials in solid form having all of the following:

1. Any of the following material compositions:

1. a.

Tungsten and alloys containing 97 % by weight or more of tungsten;

b.

Copper infiltrated tungsten containing 80 % by weight or more of tungsten; or

c.

Silver infiltrated tungsten containing 80 % by weight or more of tungsten; and

2. Able to be machined to any of the following products:

2. a.

Cylinders having a diameter of 120 mm or greater and a length of 50 mm or greater;

b.

Tubes having an inner diameter of 65 mm or greater and a wall thickness of 25 mm or greater and a length of 50 mm or greater; or

c.

Blocks having a size of 120 mm by 120 mm by 50 mm or greater.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: a.

Having all of the following characteristics:

1. Containing 17,0-23,0 weight percent chromium and 4,5-7,0 weight percent nickel;

2. Having a titanium content of greater than 0,10 weight percent; and

3. A ferritic-austenitic microstructure (also referred to as a two-phase microstructure) of which at least 10 percent is austenite by volume (according to ASTM E-1181-87 or national equivalents); and

b.

Having any of the following forms:

1. Ingots or bars having a size of 100 mm or more in each dimension;

2. Sheets having a width of 600 mm or more and a thickness of 3 mm or less; or

3. Tubes having an outer diameter of 600 mm or more and a wall thickness of 3 mm or less.

a.

Aluminium alloys having both of the following characteristics:

1. Capable of an ultimate tensile strength of 460 MPa or more at 293 K (20 °C); and

2. In the form of tubes or cylindrical solid forms (including forgings) with an outside diameter of more than 75 mm;

b.

Titanium alloys having both of the following characteristics:

1. Capable of an ultimate tensile strength of 900 MPa or more at 293 K (20 °C); and

2. In the form of tubes or cylindrical solid forms (including forgings) with an outside diameter of more than 75 mm.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: a.Note:

Carbon or aramid fibrous or filamentary materials having either of the following characteristics: 1C210.a. does not control aramid fibrous or filamentary materials having 0,25 percent or more by weight of an ester based fibre surface modifier;

a.

1. A specific modulus of 12,7 × 106 m or greater; or

2. A specific tensile strength of 235 × 103 m or greater;

b.

Glass fibrous or filamentary materials having both of the following characteristics:

1. A specific modulus of 3,18 × 106 m or greater; and

2. A specific tensile strength of 76,2 × 103 m or greater;

c. Technical Note:

Thermoset resin impregnated continuous yarns, rovings, tows or tapes with a width of 15 mm or less (prepregs), made from carbon or glass fibrous or filamentary materials specified in 1C210.a. or b. The resin forms the matrix of the composite.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: a.

In forms with a hollow cylindrical symmetry (including cylinder segments) with an inside diameter between 100 mm and 300 mm; and

b.

A mass greater than 20 kg.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note: a.

Containing less than 1000 parts per million by weight of metallic impurities other than magnesium; and

b.

Containing less than 10 parts per million by weight of boron.

a.

Containing less than 200 parts per million by weight of metallic impurities other than calcium; and

b.

Containing less than 10 parts per million by weight of boron.

a.

A purity of 99,99 % or greater by weight; and

b.

Containing less than 10 parts per million by weight of silver.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note: a.

Metal windows for X-ray machines, or for bore-hole logging devices;

b.

Oxide shapes in fabricated or semi-fabricated forms specially designed for electronic component parts or as substrates for electronic circuits;

c.

Beryl (silicate of beryllium and aluminium) in the form of emeralds or aquamarines.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note: a.

Elemental;

b.

Compounds having a total alpha activity of 37 GBq/kg (1 Ci/kg) or greater;

c.

Mixtures having a total alpha activity of 37 GBq/kg (1 Ci/kg) or greater;

d.

Products or devices containing any of the foregoing.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note: a.

Medical applicators;

b.

A product or device containing less than 0,37 GBq (10 millicuries) of radium-226.

a.

Nickel powder having both of the following characteristics:

1. A nickel purity content of 99,0 % or greater by weight; and

2. A mean particle size of less than 10 micrometres measured by American Society for Testing and Materials (ASTM) B330 standard;

b.

Porous nickel metal produced from materials specified in 1C240.a.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: a.

Filamentary nickel powders;

b.

Single porous nickel sheets with an area of 1000 cm2 per sheet or less.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:

1. Thiodiglycol (111-48-8);

2. Phosphorus oxychloride (10025-87-3);

3. Dimethyl methylphosphonate (756-79-6);

4. SEE MILITARY GOODS CONTROLS FOR Methyl phosphonyl difluoride (676-99-3);

5. Methyl phosphonyl dichloride (676-97-1);

6. Dimethyl phosphite (DMP) (868-85-9);

7. Phosphorus trichloride (7719-12-2);

8. Trimethyl phosphite (TMP) (121-45-9);

9. Thionyl chloride (7719-09-7);

10. 3-Hydroxy-1-methylpiperidine (3554-74-3);

11. N,N-Diisopropyl-(beta)-aminoethyl chloride (96-79-7);

12. N,N-Diisopropyl-(beta)-aminoethane thiol (5842-07-9);

13. 3-Quinuclidinol (1619-34-7);

14. Potassium fluoride (7789-23-3);

15. 2-Chloroethanol (107-07-3);

16. Dimethylamine (124-40-3);

17. Diethyl ethylphosphonate (78-38-6);

18. Diethyl-N,N-dimethylphosphoramidate (2404-03-7);

19. Diethyl phosphite (762-04-9);

20. Dimethylamine hydrochloride (506-59-2);

21. Ethyl phosphinyl dichloride (1498-40-4);

22. Ethyl phosphonyl dichloride (1066-50-8);

23. SEE MILITARY GOODS CONTROLS FOR Ethyl phosphonyl difluoride (753-98-0);

24. Hydrogen fluoride (7664-39-3);

25. Methyl benzilate (76-89-1);

26. Methyl phosphinyl dichloride (676-83-5);

27. N,N-Diisopropyl-(beta)-amino ethanol (96-80-0);

28. Pinacolyl alcohol (464-07-3);

29. SEE MILITARY GOODS CONTROLS FOR O-Ethyl-2-diisopropylaminoethyl methyl phosphonite (QL) (57856-11-8);

30. Triethyl phosphite (122-52-1);

31. Arsenic trichloride (7784-34-1);

32. Benzilic acid (76-93-7);

33. Diethyl methylphosphonite (15715-41-0);

34. Dimethyl ethylphosphonate (6163-75-3);

35. Ethyl phosphinyl difluoride (430-78-4);

36. Methyl phosphinyl difluoride (753-59-3);

37. 3-Quinuclidone (3731-38-2);

38. Phosphorus pentachloride (10026-13-8);

39. Pinacolone (75-97-8);

40. Potassium cyanide (151-50-8);

41. Potassium bifluoride (7789-29-9);

42. Ammonium hydrogen fluoride or ammonium bifluoride (1341-49-7);

43. Sodium fluoride (7681-49-4);

44. Sodium bifluoride (1333-83-1);

45. Sodium cyanide (143-33-9);

46. Triethanolamine (102-71-6);

47. Phosphorus pentasulphide (1314-80-3);

48. Di-isopropylamine (108-18-9);

49. Diethylaminoethanol (100-37-8);

50. Sodium sulphide (1313-82-2);

51. Sulphur monochloride (10025-67-9);

52. Sulphur dichloride (10545-99-0);

53. Triethanolamine hydrochloride (637-39-8);

54. N,N-Diisopropyl-(Beta)-aminoethyl chloride hydrochloride (4261-68-1);

55. Methylphosphonic acid (993-13-5);

56. Diethyl methylphosphonate (683-08-9);

57. N,N-Dimethylaminophosphoryl dichloride (677-43-0);

58. Triisopropyl phosphite (116-17-6);

59. Ethyldiethanolamine (139-87-7);

60. O,O-Diethyl phosphorothioate (2465-65-8);

61. O,O-Diethyl phosphorodithioate (298-06-6);

62. Sodium hexafluorosilicate (16893-85-9);

63. Methylphosphonothioic dichloride (676-98-2).

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4: a.

Viruses, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Andes virus;

2. Chapare virus;

3. Chikungunya virus;

4. Choclo virus;

5. Congo-Crimean haemorrhagic fever virus;

6. Dengue fever virus;

7. Dobrava-Belgrade virus;

8. Eastern equine encephalitis virus;

9. Ebola virus;

10. Guanarito virus;

11. Hantaan virus;

12. Hendra virus (Equine morbillivirus);

13. Japanese encephalitis virus;

14. Junin virus;

15. Kyasanur Forest virus;

16. Laguna Negra virus;

17. Lassa fever virus;

18. Louping ill virus;

19. Lujo virus;

20. Lymphocytic choriomeningitis virus;

21. Machupo virus;

22. Marburg virus;

23. Monkey pox virus;

24. Murray Valley encephalitis virus;

25. Nipah virus;

26. Omsk haemorrhagic fever virus;

27. Oropouche virus;

28. Powassan virus;

29. Rift Valley fever virus;

30. Rocio virus;

31. Sabia virus;

32. Seoul virus;

33. Sin nombre virus;

34. St Louis encephalitis virus;

35. Tick-borne encephalitis virus (Russian Spring-Summer encephalitis virus);

36. Variola virus;

37. Venezuelan equine encephalitis virus;

38. Western equine encephalitis virus;

39. Yellow fever virus;

b.

Rickettsiae, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Coxiella burnetii;

2. Bartonella quintana (Rochalimaea quintana, Rickettsia quintana);

3. Rickettsia prowasecki;

4. Rickettsia rickettsii;

c.

Bacteria, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Bacillus anthracis;

2. Brucella abortus;

3. Brucella melitensis;

4. Brucella suis;

5. Chlamydia psittaci;

6. Clostridium botulinum;

7. Francisella tularensis;

8. Burkholderia mallei (Pseudomonas mallei);

9. Burkholderia pseudomallei (Pseudomonas pseudomallei);

10. Salmonella typhi;

11. Shigella dysenteriae;

12. Vibrio cholerae;

13. Yersinia pestis;

14. Clostridium perfringens epsilon toxin producing types;

15. Enterohaemorrhagic Escherichia coli, serotype O157 and other verotoxin producing serotypes;

d.Note:

Toxins, as follows, and sub-unit of toxins thereof: 1C351.d. does not control botulinum toxins or conotoxins in product form meeting all of the following criteria:

d.

1. Botulinum toxins;

2. Clostridium perfringens toxins;

3. Conotoxin;

4. Ricin;

5. Saxitoxin;

6. Shiga toxin;

7. Staphylococcus aureus toxins;

8. Tetrodotoxin;

9. Verotoxin and shiga-like ribosome inactivating proteins;

10. Microcystin (Cyanginosin);

11. Aflatoxins;

12. Abrin;

13. Cholera toxin;

14. Diacetoxyscirpenol toxin;

15. T-2 toxin;

16. HT-2 toxin;

17. Modeccin;

18. Volkensin;

19. Viscum album Lectin 1 (Viscumin);

d.Note:

1. Are pharmaceutical formulations designed for human administration in the treatment of medical conditions;

2. Are pre-packaged for distribution as medical products;

3. Are authorised by a state authority to be marketed as medical products.

e.

Fungi, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Coccidioides immitis;

2. Coccidioides posadasii.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note: a.

Viruses, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. African swine fever virus;

2. Avian influenza virus, which are:

2. a.

Uncharacterised; or

b.

Defined in Annex I(2) to Council Directive 2005/94/EC of 20 December 2005 on Community measures for the control of avian influenza (OJ L 10, 14.1.2006, p. 16) as having high pathogenicity, as follows:

1. Type A viruses with an IVPI (intravenous pathogenicity index) in 6 week old chickens of greater than 1,2; or

2. Type A viruses of the subtypes H5 or H7 with genome sequences codified for multiple basic amino acids at the cleavage site of the haemagglutinin molecule similar to that observed for other HPAI viruses, indicating that the haemagglutinin molecule can be cleaved by a host ubiquitous protease;

3. Bluetongue virus;

4. Foot and mouth disease virus;

5. Goat pox virus;

6. Porcine herpes virus (Aujeszky’s disease);

7. Swine fever virus (Hog cholera virus);

8. Lyssa virus;

9. Newcastle disease virus;

10. Peste des petits ruminants virus;

11. Porcine enterovirus type 9 (swine vesicular disease virus);

12. Rinderpest virus;

13. Sheep pox virus;

14. Teschen disease virus;

15. Vesicular stomatitis virus;

16. Lumpy skin disease virus;

17. African horse sickness virus.

b.

Mycoplasmas, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Mycoplasma mycoides subspecies mycoides SC (small colony);

2. Mycoplasma capricolum subspecies capripneumoniae.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: a.

Genetically modified organisms or genetic elements that contain nucleic acid sequences associated with pathogenicity of organisms specified in 1C351.a., 1C351.b., 1C351.c, 1C351.e., 1C352 or 1C354;

b.

Genetically modified organisms or genetic elements that contain nucleic acid sequences coding for any of the toxins specified in 1C351.d. or sub-units of toxins thereof.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: Technical Notes:

1. Genetic elements include, inter alia, chromosomes, genomes, plasmids, transposons and vectors whether genetically modified or unmodified.

2. Nucleic acid sequences associated with the pathogenicity of any of the micro-organisms specified in 1C351.a., 1C351.b., 1C351.c., 1C351.e., 1C352 or 1C354 means any sequence specific to the specified micro-organism that:

2. a.

In itself or through its transcribed or translated products represents a significant hazard to human, animal or plant health; or

b.

Is known to enhance the ability of a specified micro-organism, or any other organism into which it may be inserted or otherwise integrated, to cause serious harm to humans, animals or plant health.

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: Technical Notes: Note: a.

Viruses, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Potato Andean latent tymovirus;

2. Potato spindle tuber viroid;

b.

Bacteria, whether natural, enhanced or modified, either in the form of isolated live cultures or as material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Xanthomonas albilineans;

2. Xanthomonas campestris pv. citri including strains referred to as Xanthomonas campestris pv. citri types A,B,C,D,E or otherwise classified as Xanthomonas citri, Xanthomonas campestris pv. aurantifolia or Xanthomonas campestris pv. citrumelo;

3. Xanthomonas oryzae pv. Oryzae (Pseudomonas campestris pv. Oryzae);

4. Clavibacter michiganensis subsp. Sepedonicus (Corynebacterium michiganensis subsp. Sepedonicum or Corynebacterium Sepedonicum);

5. Ralstonia solanacearum Races 2 and 3 (Pseudomonas solanacearum Races 2 and 3 or Burkholderia solanacearum Races 2 and 3);

c.

Fungi, whether natural, enhanced or modified, either in the form of isolated live cultures or as material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Colletotrichum coffeanum var. virulans (Colletotrichum kahawae);

2. Cochliobolus miyabeanus (Helminthosporium oryzae);

3. Microcyclus ulei (syn. Dothidella ulei);

4. Puccinia graminis (syn. Puccinia graminis f. sp. tritici);

5. Puccinia striiformis (syn. Puccinia glumarum);

6. Magnaporthe grisea (pyricularia grisea/pyricularia oryzae).

1CMaterials Technical Note: NB:NB:Note: Technical Notes: 1.2.3. Technical Note: NB: Technical Note: NB:NB: Technical Note: Note 1:Note 2: Technical Note: NB: Technical Note: Technical Note: Technical Note: Note:Note: Technical Note: Note: Technical Note: Note:NB:Note:Note:Note: Technical Note: Note:Note:Note:Note:Note: Technical Note: NB:Note 1:Note 2:Note 3:Note 4:Note:Note: Technical Notes: Note:NB:

a.Note 1:Note 2:Note 3:Note 4:

Toxic chemicals, as follows: For exports to States not Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.1. and .a.2. in which no individually specified chemical constitutes more than 1 % by the weight of the mixture. For exports to States Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.1. and .a.2. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.4., .a.5., .a.6. and .a.7. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C450 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use.

a.

1. Amiton: O,O-Diethyl S-[2-(diethylamino)ethyl] phosphorothiolate (78-53-5) and corresponding alkylated or protonated salts;

2. PFIB: 1,1,3,3,3-Pentafluoro-2-(trifluoromethyl)-1-propene (382-21-8);

3. SEE MILITARY GOODS CONTROLS FOR BZ: 3-Quinuclidinyl benzilate (6581-06-2);

4. Phosgene: Carbonyl dichloride (75-44-5);

5. Cyanogen chloride (506-77-4);

6. Hydrogen cyanide (74-90-8);

7. Chloropicrin: Trichloronitromethane (76-06-2);

b.

Toxic chemical precursors, as follows:

1.Note: Chemicals, other than those specified in the Military Goods Controls or in 1C350, containing a phosphorus atom to which is bonded one methyl, ethyl or propyl (normal or iso) group but not further carbon atoms; 1C450.b.1 does not control Fonofos: O-Ethyl S-phenyl ethylphosphonothiolothionate (944-22-9);

2.NB: N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] phosphoramidic dihalides, other than N,N-Dimethylaminophosphoryl dichloride; See 1C350.57. for N,N-Dimethylaminophosphoryl dichloride.

3. Dialkyl [methyl, ethyl or propyl (normal or iso)] N,N-dialkyl [methyl, ethyl or propyl (normal or iso)]-phosphoramidates, other than Diethyl-N,N-dimethylphosphoramidate which is specified in 1C350;

4. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethyl-2-chlorides and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethyl chloride or N,N-Diisopropyl-(beta)-aminoethyl chloride hydrochloride which are specified in 1C350;

5.Note: N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethane-2-ols and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethanol (96-80-0) and N,N-Diethylaminoethanol (100-37-8) which are specified in 1C350; 1C450.b.5. does not control the following:

5.Note: a.

N,N-Dimethylaminoethanol (108-01-0) and corresponding protonated salts;

b.

Protonated salts of N,N-Diethylaminoethanol (100-37-8);

6. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethane-2-thiols and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethane thiol which is specified in 1C350;

7. See 1C350 for ethyldiethanolamine (139-87-7);

8. Methyldiethanolamine (105-59-9).

1DSoftware 1D001Software specially designed or modified for the development, production or use of equipment specified in 1B001 to 1B003. 1D002Software for the development of organic matrix, metal matrix or carbon matrix laminates or composites. 1D003Software specially designed or modified to enable equipment to perform the functions of equipment specified in 1A004.c. or 1A004.d. 1D101Software specially designed or modified for the use of goods specified in 1B101 1B102, 1B115, 1B117, 1B118 or 1B119. 1D103Software specially designed for analysis of reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures. 1D201Software specially designed for the use of goods specified in 1B201.

1ETechnology Note:

1E001Technology according to the General Technology Note for the development or production of equipment or materials specified in 1A001.b., 1A001.c., 1A002 to 1A005, 1A006.b., 1A007, 1B or 1C. 1E002Other technology as follows: 1E101Technology according to the General Technology Note for the use of goods specified in 1A102, 1B001, 1B101, 1B102, 1B115 to 1B119, 1C001, 1C101, 1C107, 1C111 to 1C118, 1D101 or 1D103. 1E102Technology according to the General Technology Note for the development of software specified in 1D001, 1D101 or 1D103. 1E103Technology for the regulation of temperature, pressure or atmosphere in autoclaves or hydroclaves, when used for the production of composites or partially processed composites. 1E104Technology relating to the production of pyrolytically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. 1E104 includes technology for the composition of precursor gases, flow-rates and process control schedules and parameters. 1E201Technology according to the General Technology Note for the use of goods specified in 1A002, 1A007, 1A202, 1A225 to 1A227, 1B201, 1B225 to 1B233, 1C002.b.3. or .b.4., 1C010.b., 1C202, 1C210, 1C216, 1C225 to 1C240 or 1D201. 1E202Technology according to the General Technology Note for the development or production of goods specified in 1A007, 1A202 or 1A225 to 1A227. 1E203Technology according to the General Technology Note for the development of software specified in 1D201.

1ETechnology a.

Technology for the development or production of polybenzothiazoles or polybenzoxazoles;

b.

Technology for the development or production of fluoroelastomer compounds containing at least one vinylether monomer;

c.

Technology for the design or production of the following base materials or non-composite ceramic materials:

1. Base materials having all of the following:

1. a.

Any of the following compositions:

1. Single or complex oxides of zirconium and complex oxides of silicon or aluminium;

2. Single nitrides of boron (cubic crystalline forms);

3. Single or complex carbides of silicon or boron; or

4. Single or complex nitrides of silicon;

b.

Either of the following total metallic impurities (excluding intentional additions):

1. Less than 1000 ppm for single oxides or carbides; or

2. Less than 5000 ppm for complex compounds or single nitrides; and

c.

Being any of the following:

1. Zirconia (CAS 1314-23-4) with an average particle size equal to or less than 1 μm and no more than 10 % of the particles larger than 5 μm;

2. Other base materials with an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm; or

3. Having all of the following:

3. a.

Platelets with a length to thickness ratio exceeding 5;

b.

Whiskers with a length to diameter ratio exceeding 10 for diameters less than 2 μm; and

c.

Continuous or chopped fibres less than 10 μm in diameter;

2.Note: Non-composite ceramic materials composed of the materials specified in 1E002.c.1; 1E002.c.2. does not control technology for the design or production of abrasives.

d.

Technology for the production of aromatic polyamide fibres;

e.

Technology for the installation, maintenance or repair of materials specified in 1C001;

f.Note:

Technology for the repair of composite structures, laminates or materials specified in 1A002, 1C007.c. or 1C007.d.; 1E002.f. does not control technology for the repair of civil aircraft structures using carbon fibrous or filamentary materials and epoxy resins, contained in aircraft manufacturers’ manuals.

g. Technical Note:

Libraries (parametric technical databases) specially designed or modified to enable equipment to perform the functions of equipment specified in 1A004.c. or 1A004.d. For the purpose of 1E002.g., library (parametric technical database) means a collection of technical information, reference to which may enhance the performance of relevant equipment or systems.

CATEGORY 2 MATERIALS PROCESSING

2ASystems, Equipment and Components NB:NB:Note: Technical Note:

For quiet running bearings, see the Military Goods Controls. 2A001Anti-friction bearings and bearing systems, as follows, and components therefor: SEE ALSO 2A101. 2A001 does not control balls with tolerances specified by the manufacturer in accordance with ISO 3290 as grade 5 or worse. 2A101Radial ball bearings, other than those specified in 2A001, having all tolerances specified in accordance with ISO 492 Tolerance Class 2 (or ANSI/ABMA Std 20 Tolerance Class ABEC-9 or other national equivalents), or better and having all the following characteristics: 2A225Crucibles made of materials resistant to liquid actinide metals, as follows: 2A226Valves having all of the following characteristics: For valves with different inlet and outlet diameters, the nominal size in 2A226 refers to the smallest diameter.

2ASystems, Equipment and Components NB:NB:Note: a.Note:

Ball bearings and solid roller bearings, having all tolerances specified by the manufacturer in accordance with ISO 492 Tolerance Class 4 (or national equivalents), or better, and having both rings and rolling elements (ISO 5593), made from monel or beryllium; 2A001.a. does not control tapered roller bearings.

b.

Not used;

c.

Active magnetic bearing systems using any of the following:

1. Materials with flux densities of 2,0 T or greater and yield strengths greater than 414 MPa;

2. All-electromagnetic 3D homopolar bias designs for actuators; or

3. High temperature (450 K (177 °C) and above) position sensors.

a.

An inner ring bore diameter between 12 mm and 50 mm;

b.

An outer ring bore diameter between 25 mm and 100 mm; and

c.

A width between 10 mm and 20 mm.

a.

Crucibles having both of the following characteristics:

1. A volume of between 150 cm3 and 8000 cm3; and

2. Made of or coated with any of the following materials, having a purity of 98 % or greater by weight:

2. a.

Calcium fluoride (CaF2);

b.

Calcium zirconate (metazirconate) (CaZrO3);

c.

Cerium sulphide (Ce2S3);

d.

Erbium oxide (erbia) (Er2O3);

e.

Hafnium oxide (hafnia) (HfO2);

f.

Magnesium oxide (MgO);

g.

Nitrided niobium-titanium-tungsten alloy (approximately 50 % Nb, 30 % Ti, 20 % W);

h.

Yttrium oxide (yttria) (Y2O3); or

i.

Zirconium oxide (zirconia) (ZrO2);

b.

Crucibles having both of the following characteristics:

1. A volume of between 50 cm3 and 2000 cm3; and

2. Made of or lined with tantalum, having a purity of 99,9 % or greater by weight;

c.

Crucibles having all of the following characteristics:

1. A volume of between 50 cm3 and 2000 cm3;

2. Made of or lined with tantalum, having a purity of 98 % or greater by weight; and

3. Coated with tantalum carbide, nitride, boride, or any combination thereof.

a.

A nominal size of 5 mm or greater;

b.

Having a bellows seal; and

c.

Wholly made of or lined with aluminium, aluminium alloy, nickel, or nickel alloy containing more than 60 % nickel by weight.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: Technical Note: Technical Notes: 1.2. Technical Notes: 1.2.

Secondary parallel contouring axes, (e.g. the w-axis on horizontal boring mills or a secondary rotary axis the centre line of which is parallel to the primary rotary axis) are not counted in the total number of contouring axes. Rotary axes need not rotate over 360 °. A rotary axis can be driven by a linear device (e.g. a screw or a rack-and-pinion). For the purposes of 2B, the number of axes which can be co-ordinated simultaneously for contouring control is the number of axes along or around which, during processing of the workpiece, simultaneous and interrelated motions are performed between the workpiece and a tool. This does not include any additional axes along or around which other relative movement within the machine are performed such as: Axis nomenclature shall be in accordance with International Standard ISO 841, Numerical Control Machines — Axis and Motion Nomenclature. For the purposes of 2B001 to 2B009 a tilting spindle is counted as a rotary axis. Stated positioning accuracy derived from measurements made according to ISO 230/2 (1988)or national equivalents may be used for each machine tool model as an alternative to individual machine tests. Stated positioning accuracy means the accuracy value provided to the competent authorities of the Member State in which the exporter is established as representative of the accuracy of a specific machine model. Determination of Stated Positioning Accuracy 2B001Machine tools and any combination thereof, for removing (or cutting) metals, ceramics or composites, which, according to the manufacturer’s technical specification, can be equipped with electronic devices for numerical control, and specially designed components as follows: SEE ALSO 2B201. 2B001 does not control special purpose machine tools limited to the manufacture of gears. For such machines see 2B003. 2B001 does not control special purpose machine tools limited to the manufacture of any of the following: A machine tool having at least two of the three turning, milling or grinding capabilities (e.g. a turning machine with milling capability), must be evaluated against each applicable entry 2B001.a., b. or c. For optical finishing machines, see 2B002. 2B002Numerically controlled optical finishing machine tools equipped for selective material removal to produce non-spherical optical surfaces having all of the following characteristics: For the purposes of 2B002: 2B003Numerically controlled or manual machine tools, and specially designed components, controls and accessories therefor, specially designed for the shaving, finishing, grinding or honing of hardened (Rc = 40 or more) spur, helical and double-helical gears with a pitch diameter exceeding 1250 mm and a face width of 15 % of pitch diameter or larger finished to a quality of AGMA 14 or better (equivalent to ISO 1328 class 3). 2B004Hot isostatic presses having all of the following, and specially designed components and accessories therefor: SEE ALSO 2B104 AND 2B204. The inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other. For specially designed dies, moulds and tooling see 1B003, 9B009 and the Military Goods Controls. 2B005Equipment specially designed for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows, for non-electronic substrates, by processes shown in the Table and associated Notes following 2E003.f., and specially designed automated handling, positioning, manipulation and control components therefor: 2B005 does not control chemical vapour deposition, cathodic arc, sputter deposition, ion plating or ion implantation equipment, specially designed for cutting or machining tools. 2B006Dimensional inspection or measuring systems, equipment and electronic assemblies, as follows: 2B006 includes machine tools, other than those specified by 2B001, that can be used as measuring machines if they meet or exceed the criteria specified for the measuring machine function. 2B007Robots having any of the following characteristics and specially designed controllers and end-effectors therefor: SEE ALSO 2B207. 2B008Assemblies or units, specially designed for machine tools, or dimensional inspection or measuring systems and equipment, as follows: 2B009Spin-forming machines and flow-forming machines, which, according to the manufacturer’s technical specification, can be equipped with numerical control units or a computer control and having both of the following: SEE ALSO 2B109 AND 2B209. For the purpose of 2B009, machines combining the function of spin-forming and flow-forming are regarded as flow-forming machines. 2B104Isostatic presses, other than those specified in 2B004, having all of the following: SEE ALSO 2B204. 2B105Chemical vapour deposition (CVD) furnaces, other than those specified in 2B005.a., designed or modified for the densification of carbon-carbon composites. 2B109Flow-forming machines, other than those specified in 2B009, and specially designed components as follows: SEE ALSO 2B209. 2B109 does not control machines that are not usable in the production of propulsion components and equipment (e.g. motor cases) for systems specified in 9A005, 9A007.a. or 9A105.a. Machines combining the function of spin-forming and flow-forming are for the purpose of 2B109 regarded as flow-forming machines. 2B116Vibration test systems, equipment and components therefor, as follows: In 2B116, bare table means a flat table, or surface, with no fixture or fittings. 2B117Equipment and process controls, other than those specified in 2B004, 2B005.a., 2B104 or 2B105, designed or modified for densification and pyrolysis of structural composite rocket nozzles and reentry vehicle nose tips. 2B119Balancing machines and related equipment, as follows: SEE ALSO 2B219. 2B120Motion simulators or rate tables having all of the following characteristics: 2B121Positioning tables (equipment capable of precise rotary positioning in any axes), other than those specified in 2B120, having all the following characteristics: 2B121 does not control rotary tables designed or modified for machine tools or for medical equipment. For controls on machine tool rotary tables see 2B008. 2B122Centrifuges capable of imparting accelerations above 100 g and designed or modified to incorporate slip rings or integrated non-contact devices capable of transferring electrical power, signal information, or both. Centrifuges specified in 2B122 remain controlled whether or not slip rings or integrated non-contact devices are fitted at time of export. 2B201Machine tools and any combination thereof, other than those specified in 2B001, as follows, for removing or cutting metals, ceramics or composites, which, according to the manufacturer’s technical specification, can be equipped with electronic devices for simultaneous contouring control in two or more axes: 2B204Isostatic presses, other than those specified in 2B004 or 2B104, and related equipment, as follows: In 2B204 the inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other. 2B206Dimensional inspection machines, instruments or systems, other than those specified in 2B006, as follows: Machine tools that can be used as measuring machines are controlled if they meet or exceed the criteria specified for the machine tool function or the measuring machine function. A machine specified in 2B206 is controlled if it exceeds the control threshold anywhere within its operating range. All parameters of measurement values in 2B206 represent plus/minus i.e. not total band. 2B207Robots, end-effectors and control units, other than those specified in 2B007, as follows: 2B209Flow forming machines, spin forming machines capable of flow forming functions, other than those specified in 2B009 or 2B109, and mandrels, as follows: 2B209.a. includes machines which have only a single roller designed to deform metal plus two auxiliary rollers which support the mandrel, but do not participate directly in the deformation process. 2B219Centrifugal multiplane balancing machines, fixed or portable, horizontal or vertical, as follows: 2B225Remote manipulators that can be used to provide remote actions in radiochemical separation operations or hot cells, having either of the following characteristics: Remote manipulators provide translation of human operator actions to a remote operating arm and terminal fixture. They may be of master/slave type or operated by joystick or keypad. 2B226Controlled atmosphere (vacuum or inert gas) induction furnaces, and power supplies therefor, as follows: SEE ALSO 3B. 2B226.a. does not control furnaces designed for the processing of semiconductor wafers. 2B227Vacuum or other controlled atmosphere metallurgical melting and casting furnaces and related equipment as follows: 2B228Rotor fabrication or assembly equipment, rotor straightening equipment, bellows-forming mandrels and dies, as follows: 2B230Pressure transducers capable of measuring absolute pressures at any point in the range 0 to 13 kPa and having both of the following characteristics: For the purposes of 2B230, accuracy includes non-linearity, hysteresis and repeatability at ambient temperature. 2B231Vacuum pumps having all of the following characteristics: The pumping speed is determined at the measurement point with nitrogen gas or air. The ultimate vacuum is determined at the input of the pump with the input of the pump blocked off. 2B232Multistage light gas guns or other high-velocity gun systems (coil, electromagnetic, and electrothermal types, and other advanced systems) capable of accelerating projectiles to 2 km/s or greater. 2B350Chemical manufacturing facilities, equipment and components, as follows: Carbon graphite is a composition consisting of amorphous carbon and graphite, in which the graphite content is eight percent or more by weight. For the listed materials in the above entries, the term alloy when not accompanied by a specific elemental concentration is understood as identifying those alloys where the identified metal is present in a higher percentage by weight than any other element. 2B351Toxic gas monitoring systems and their dedicated detecting components, other than those specified in 1A004, as follows; and detectors; sensor devices; and replaceable sensor cartridges therefor: 2B352Equipment capable of use in handling biological materials, as follows:

2BTest, Inspection and Production Equipment Technical Notes: 1.2. a.

Wheel-dressing systems in grinding machines;

b.

Parallel rotary axes designed for mounting of separate workpieces;

c.

Co-linear rotary axes designed for manipulating the same workpiece by holding it in a chuck from different ends.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5. a.

Select five machines of a model to be evaluated;

b.

Measure the linear axis accuracies according to ISO 230/2 (1988);

c.

Determine the A-values for each axis of each machine. The method of calculating the A-value is described in the ISO standard;

d.

Determine the mean value of the A-value of each axis. This mean value  becomes the stated value of each axis for the model (Âx Ây …);

e.

Since the Category 2 list refers to each linear axis there will be as many stated values as there are linear axes;

f.

If any axis of a machine model not controlled by 2B001.a. to 2B001.c. or 2B201 has a stated accuracy  of 6 microns for grinding machines and 8 microns for milling and turning machines or better, the manufacturer should be required to reaffirm the accuracy level once every 18 months.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2: a.

Crankshafts or camshafts;

b.

Tools or cutters;

c.

Extruder worms; or

d.

Engraved or facetted jewellery parts.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: a.

Machine tools for turning having all of the following:

1. Positioning accuracy with all compensations available equal to or less (better) than 6 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; and

2.Note: Two or more axes which can be coordinated simultaneously for contouring control; 2B001.a. does not control turning machines specially designed for producing contact lenses, having both of the following:

2.Note: a.

Machine controller limited to using ophthalmic based software for part programming data input; and

b.

No vacuum chucking.

b.

Machine tools for milling having any of the following:

1. Having all of the following:

1. a.

Positioning accuracy with all compensations available equal to or less (better) than 6 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; and

b.

Three linear axes plus one rotary axis which can be coordinated simultaneously for contouring control;

2. Five or more axes which can be coordinated simultaneously for contouring control;

3. A positioning accuracy for jig boring machines, with all compensations available, equal to or less (better) than 4 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; or

4. Fly cutting machines having all of the following:

4. a.

Spindle run-out and camming less (better) than 0,0004 mm TIR; and

b.

Angular deviation of slide movement (yaw, pitch and roll) less (better) than 2 seconds of arc, TIR over 300 mm of travel;

c.

Machine tools for grinding having any of the following:

1. Having all of the following:

1. a.

Positioning accuracy with all compensations available equal to or less (better) than 4 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; and

b.

Three or more axes which can be coordinated simultaneously for contouring control; or

2.Note: Five or more axes which can be coordinated simultaneously for contouring control; 2B001.c. does not control grinding machine as follows:

2.Note: a.

Cylindrical external, internal, and external-internal grinding machines, having all of the following:

1. Limited to cylindrical grinding; and

2. Limited to a maximum workpiece capacity of 150 mm outside diameter or length.

b.

Machines designed specifically as jig grinders that do not have a z-axis or a w-axis, with a positioning accuracy with all compensations available less (better) than 4 μm according to ISO 230/2 (1988)or national equivalents.

c.

Surface grinders.

d.

Electrical discharge machines (EDM) of the non-wire type which have two or more rotary axes which can be coordinated simultaneously for contouring control;

e.

Machine tools for removing metals, ceramics or composites, having all of the following:

1. Removing material by means of any of the following:

1. a.

Water or other liquid jets, including those employing abrasive additives;

b.

Electron beam; or

c.

Laser beam; and

2. At least two rotary axes having all of the following:

2. a.

Can be coordinated simultaneously for contouring control; and

b.

A positioning accuracy of less (better) than 0,003 °;

f.

Deep-hole-drilling machines and turning machines modified for deep-hole-drilling, having a maximum depth-of-bore capability exceeding 5 m and specially designed components therefor.

a.

Finishing the form to less (better) than 1,0 μm;

b.

Finishing to a roughness less (better) than 100 nm rms;

c.

Four or more axes which can be coordinated simultaneously for contouring control; and

d.

Using any of the following processes:

1. Magnetorheological finishing (MRF);

2. Electrorheological finishing (ERF);

3. Energetic particle beam finishing;

4. Inflatable membrane tool finishing; or

5. Fluid jet finishing.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes:

1. MRF is a material removal process using an abrasive magnetic fluid whose viscosity is controlled by a magnetic field.

2. ERF is a removal process using an abrasive fluid whose viscosity is controlled by an electric field.

3. Energetic particle beam finishing uses Reactive Atom Plasmas (RAP) or ion-beams to selectively remove material.

4. Inflatable membrane tool finishing is a process that uses a pressurised membrane that deforms to contact the workpiece over a small area.

5. Fluid jet finishing makes use of a fluid stream for material removal.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: a.

A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and

b.

Having any of the following:

1. A maximum working pressure exceeding 207 MPa;

2. A controlled thermal environment exceeding 1773 K (1500 °C); or

3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB: a.NB:

Chemical vapour deposition (CVD) production equipment having both of the following: SEE ALSO 2B105.

1. A process modified for one of the following:

1. a.

Pulsating CVD;

b.

Controlled nucleation thermal deposition (CNTD); or

c.

Plasma enhanced or plasma assisted CVD; and

2. Having either of the following:

2. a.

Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or

b.

Incorporating in situ coating thickness control;

b.

Ion implantation production equipment having beam currents of 5 mA or more;

c.

Electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having either of the following:

1. A liquid pool level laser control system which regulates precisely the ingots feed rate; or

2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;

d.

Plasma spraying production equipment having either of the following:

1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or

2. Incorporating in situ coating thickness control;

e.

Sputter deposition production equipment capable of current densities of 0,1 mA/mm2 or higher at a deposition rate of 15 μm/h or more;

f.

Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;

g.

Ion plating production equipment capable of the in situ measurement of either of the following:

1. Coating thickness on the substrate and rate control; or

2. Optical characteristics.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note: a. Technical Note: NB:

Computer controlled or numerically controlled Coordinate Measuring Machines (CMM), having a three dimensional (volumetric) maximum permissible error of length measurement (E0, MPE) at any point within the operating range of the machine (i.e. within the length of axes) equal to or less (better) than (1,7 + L/1000) μm (L is the measured length in mm), according to ISO 10360-2 (2009); The E0, MPE of the most accurate configuration of the CMM specified by the manufacturer (e.g. best of the following: probe, stylus length, motion parameters, environment) and with all compensations available shall be compared to the 1,7 + L/1000 μm threshold. SEE ALSO 2B206.

b.

Linear and angular displacement measuring instruments, as follows:

1. Technical Note: Note:

Linear displacement measuring instruments having any of the following: For the purpose of 2B006.b.1. linear displacement means the change of distance between the measuring probe and the measured object. 2B006.b.1. does not control measuring interferometer systems, with an automatic control system that is designed to use no feedback techniques, containing a laser to measure slide movement errors of machine-tools, dimensional inspection machines or similar equipment.

1. Technical Note: a.

Non-contact type measuring systems with a resolution equal to or less (better) than 0,2 μm within a measuring range up to 0,2 mm;

b.

Linear voltage differential transformer systems having both of the following:

1. Linearity equal to or less (better) than 0,1 % within a measuring range up to 5 mm; and

2. Drift equal to or less (better) than 0,1 % per day at a standard ambient test room temperature ± 1 K;

c.

Measuring systems having all of the following:

1. Containing a laser; and

2. Maintaining, for at least 12 hours, at a temperature of 20 ± 1 °C, all of the following:

2. a.

A resolution over their full scale of 0,1 μm or less (better); and

b.

Capable of achieving a measurement uncertainty, when compensated for the refractive index of air, equal to or less (better) than (0,2 + L/2000) μm (L is the measured length in mm); or

d.

Electronic assemblies specially designed to provide feedback capability in systems specified in 2B006.b.1.c.;

2.Note: Angular displacement measuring instruments having an angular position deviation equal to or less (better) than 0,00025 °; 2B006.b.2. does not control optical instruments, such as autocollimators, using collimated light (e.g. laser light) to detect angular displacement of a mirror.

c.

Equipment for measuring surface irregularities, by measuring optical scatter as a function of angle, with a sensitivity of 0,5 nm or less (better).

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB: a. Technical Note:

Capable in real time of full three-dimensional image processing or full three-dimensional scene analysis to generate or modify programmes or to generate or modify numerical programme data; The scene analysis limitation does not include approximation of the third dimension by viewing at a given angle, or limited grey scale interpretation for the perception of depth or texture for the approved tasks (2 1/2 D).

b.Note:

Specially designed to comply with national safety standards applicable to potentially explosive munitions environments; 2B007.b. does not control robots specially designed for paint-spraying booths.

c. Technical Note:

Specially designed or rated as radiation-hardened to withstand a total radiation dose greater than 5 × 103 Gy (silicon) without operational degradation; or The term Gy(silicon) refers to the energy in Joules per kilogram absorbed by an unshielded silicon sample when exposed to ionising radiation.

d.

Specially designed to operate at altitudes exceeding 30000 m.

a.NB:

Linear position feedback units (e.g. inductive type devices, graduated scales, infrared systems or laser systems) having an overall accuracy less (better) than (800 + (600 × L × 10–3)) nm (L equals the effective length in mm); For laser systems see also Note to 2B006.b.1.c. and d.

b.NB:

Rotary position feedback units (e.g. inductive type devices, graduated scales, infrared systems or laser systems) having an accuracy less (better) than 0,00025 °; For laser systems see also Note to 2B006.b.2.

c.

Compound rotary tables and tilting spindles, capable of upgrading, according to the manufacturer’s specifications, machine tools to or above the levels specified in 2B.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: a.

Two or more controlled axes of which at least two can be coordinated simultaneously for contouring control; and

b.

A roller force more than 60 kN.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB: a.

Maximum working pressure of 69 MPa or greater;

b.

Designed to achieve and maintain a controlled thermal environment of 873 K (600 °C) or greater; and

c.

Possessing a chamber cavity with an inside diameter of 254 mm or greater.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB: a.

Flow-forming machines having both of the following:

1. According to the manufacturer’s technical specification, can be equipped with numerical control units or a computer control, even when not equipped with such units; and

2. With more than two axes which can be coordinated simultaneously for contouring control.

b.

Specially designed components for flow-forming machines specified in 2B009 or 2B109.a.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: a.

Vibration test systems employing feedback or closed loop techniques and incorporating a digital controller, capable of vibrating a system at an acceleration equal to or greater than 10 g rms between 20 Hz and 2 kHz while imparting forces equal to or greater than 50 kN, measured bare table;

b. Technical Note:

Digital controllers, combined with specially designed vibration test software, with a real-time control bandwidth greater than 5 kHz designed for use with vibration test systems specified in 2B116.a.; In 2B116.b., real-time control bandwidth means the maximum rate at which a controller can execute complete cycles of sampling, processing data and transmitting control signals.

c.

Vibration thrusters (shaker units), with or without associated amplifiers, capable of imparting a force equal to or greater than 50 kN, measured bare table, and usable in vibration test systems specified in 2B116.a.;

d.

Test piece support structures and electronic units designed to combine multiple shaker units in a system capable of providing an effective combined force equal to or greater than 50 kN, measured bare table, and usable in vibration systems specified in 2B116.a.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB: a.

Balancing machines having all the following characteristics:

1. Not capable of balancing rotors/assemblies having a mass greater than 3 kg;

2. Capable of balancing rotors/assemblies at speeds greater than 12500 rpm;

3. Capable of correcting unbalance in two planes or more; and

4.Note: Capable of balancing to a residual specific unbalance of 0,2 g mm per kg of rotor mass; 2B119.a. does not control balancing machines designed or modified for dental or other medical equipment.

b. Technical Note:

Indicator heads designed or modified for use with machines specified in 2B119.a. Indicator heads are sometimes known as balancing instrumentation.

a.

Two axes or more;

b.

Designed or modified to incorporate slip rings or integrated non-contact devices capable of transferring electrical power, signal information, or both; and

c.

Having any of the following characteristics:

1. For any single axis having all of the following:

1. a.

Capable of rates of 400 degrees/s or more, or 30 degrees/s or less; and

b.

A rate resolution equal to or less than 6 degrees/s and an accuracy equal to or less than 0,6 degrees/s;

2. Having a worst-case rate stability equal to or better (less) than plus or minus 0,05 % averaged over 10 degrees or more; or

3.Note 1:Note 2:

A positioning accuracy equal to or less (better) than 5 arc second. 2B120 does not control rotary tables designed or modified for machine tools or for medical equipment. For controls on machine tool rotary tables see 2B008. Motion simulators or rate tables specified in 2B120 remain controlled whether or not slip rings or integrated non-contact devices are fitted at time of export.

a.

Two axes or more; and

b.

A positioning accuracy equal to or less (better) than 5 arc second.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: a.

Machine tools for milling, having any of the following characteristics:

1. Positioning accuracies with all compensations available equal to or less (better) than 6 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; or

2.Note: Two or more contouring rotary axes; 2B201.a. does not control milling machines having the following characteristics:

2.Note: a.

X-axis travel greater than 2 m; and

b.

Overall positioning accuracy on the x-axis more (worse) than 30 μm.

b.Note:Note 1:Note 2:

Machine tools for grinding, having any of the following characteristics: 2B201.b. does not control the following grinding machines: 2B201 does not control special purpose machine tools limited to the manufacture of any of the following parts: A machine tool having at least two of the three turning, milling or grinding capabilities (e.g. a turning machine with milling capability), must be evaluated against each applicable entry 2B001.a. or 2B201.a. or b.

b.

1. Positioning accuracies with all compensations available equal to or less (better) than 4 μm according to ISO 230/2 (1988) or national equivalents along any linear axis; or

2. Two or more contouring rotary axes.

b.Note:

a.

Cylindrical external, internal, and external-internal grinding machines having both of the following characteristics:

1. Limited to a maximum workpiece capacity of 150 mm outside diameter or length; and

2. Axes limited to x, z and c;

b.

Jig grinders that do not have a z-axis or a w-axis with an overall positioning accuracy less (better) than 4 μm according to ISO 230/2 (1988)or national equivalents.

b.Note:Note 1: a.

Gears;

b.

Crankshafts or camshafts;

c.

Tools or cutters;

d.

Extruder worms.

a.

Isostatic presses having both of the following characteristics:

1. Capable of achieving a maximum working pressure of 69 MPa or greater; and

2. A chamber cavity with an inside diameter in excess of 152 mm;

b.

Dies, moulds and controls, specially designed for isostatic presses specified in 2B204.a.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: a.

Computer controlled or numerically controlled coordinate measuring machines (CMM) having both of the following characteristics:

1. Two or more axes; and

2. A maximum permissible error of length measurement (E0, MPE) along any axis (one dimensional), identified as E0X, E0Y, or E0Z, equal to or less (better) than (1,25 + L/1000) μm (where L is the measured length in millimetres) at any point within the operating range of the machine (i.e. within the length of the axis), tested according to ISO 10360-2(2009);

b.

Systems for simultaneous linear-angular inspection of hemishells, having both of the following characteristics:

1. Measurement uncertainty along any linear axis equal to or less (better) than 3,5 μm per 5 mm; and

2. Angular position deviation equal to or less than 0,02 °.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: a.

Robots or end-effectors specially designed to comply with national safety standards applicable to handling high explosives (for example, meeting electrical code ratings for high explosives);

b.

Control units specially designed for any of the robots or end-effectors specified in 2B207.a.

a.

Machines having both of the following characteristics:

1. Three or more rollers (active or guiding); and

2. Which, according to the manufacturer’s technical specification, can be equipped with numerical control units or a computer control;

b.

Rotor-forming mandrels designed to form cylindrical rotors of inside diameter between 75 mm and 400 mm.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: a.

Centrifugal balancing machines designed for balancing flexible rotors having a length of 600 mm or more and having all of the following characteristics:

1. Swing or journal diameter greater than 75 mm;

2. Mass capability of from 0,9 to 23 kg; and

3. Capable of balancing speed of revolution greater than 5000 r.p.m.;

b.

Centrifugal balancing machines designed for balancing hollow cylindrical rotor components and having all of the following characteristics:

1. Journal diameter greater than 75 mm;

2. Mass capability of from 0,9 to 23 kg;

3. Capable of balancing to a residual imbalance equal to or less than 0,01 kg × mm/kg per plane; and

4. Belt drive type.

a.

A capability of penetrating 0,6 m or more of hot cell wall (through-the-wall operation); or

b.

A capability of bridging over the top of a hot cell wall with a thickness of 0,6 m or more (over-the-wall operation).

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB: a.

Furnaces having all of the following characteristics:

1. Capable of operation above 1123 K (850 °C);

2. Induction coils 600 mm or less in diameter; and

3. Designed for power inputs of 5 kW or more;

b.

Power supplies, with a specified power output of 5 kW or more, specially designed for furnaces specified in 2B226.a.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: a.

Arc remelt and casting furnaces having both of the following characteristics:

1. Consumable electrode capacities between 1000 cm3 and 20000 cm3; and

2. Capable of operating with melting temperatures above 1973 K (1700 °C);

b.

Electron beam melting furnaces and plasma atomisation and melting furnaces, having both of the following characteristics:

1. A power of 50 kW or greater; and

2. Capable of operating with melting temperatures above 1473 K (1200 °C).

c.

Computer control and monitoring systems specially configured for any of the furnaces specified in 2B227.a. or b.

a.Note:

Rotor assembly equipment for assembly of gas centrifuge rotor tube sections, baffles, and end caps; 2B228.a. includes precision mandrels, clamps, and shrink fit machines.

b. Technical Note:

Rotor straightening equipment for alignment of gas centrifuge rotor tube sections to a common axis; In 2B228.b. such equipment normally consists of precision measuring probes linked to a computer that subsequently controls the action of, for example, pneumatic rams used for aligning the rotor tube sections.

c. Technical Note:

Bellows-forming mandrels and dies for producing single-convolution bellows. In 2B228.c. the bellows have all of the following characteristics:

1. Inside diameter between 75 mm and 400 mm;

2. Length equal to or greater than 12,7 mm;

3. Single convolution depth greater than 2 mm; and

4. Made of high-strength aluminium alloys, maraging steel or high strength fibrous or filamentary materials.

a.

Pressure sensing elements made of or protected by aluminium, aluminium alloy, nickel or nickel alloy with more than 60 % nickel by weight; and

b.

Having either of the following characteristics:

1. A full scale of less than 13 kPa and an accuracy of better than ± 1 % of full-scale; or

2. A full scale of 13 kPa or greater and an accuracy of better than ± 130 Pa.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: Technical Note: a.

Input throat size equal to or greater than 380 mm;

b.

Pumping speed equal to or greater than 15 m3/s; and

c.

Capable of producing an ultimate vacuum better than 13 mPa.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: Technical Note: Technical Notes: 1.2. a.

Reaction vessels or reactors, with or without agitators, with total internal (geometric) volume greater than 0,1 m3 (100 litres) and less than 20 m3 (20000 litres), where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coating or glass lining);

4. Nickel or alloys with more than 40 % nickel by weight;

5. Tantalum or tantalum alloys;

6. Titanium or titanium alloys;

7. Zirconium or zirconium alloys; or

8. Niobium (columbium) or niobium alloys;

b.

Agitators for use in reaction vessels or reactors specified in 2B350.a.; and impellers, blades or shafts designed for such agitators, where all surfaces of the agitator that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Nickel or alloys with more than 40 % nickel by weight;

5. Tantalum or tantalum alloys;

6. Titanium or titanium alloys;

7. Zirconium or zirconium alloys; or

8. Niobium (columbium) or niobium alloys;

c.

Storage tanks, containers or receivers with a total internal (geometric) volume greater than 0,1 m3 (100 litres) where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Nickel or alloys with more than 40 % nickel by weight;

5. Tantalum or tantalum alloys;

6. Titanium or titanium alloys;

7. Zirconium or zirconium alloys; or

8. Niobium (columbium) or niobium alloys;

d.

Heat exchangers or condensers with a heat transfer surface area greater than 0,15 m2, and less than 20 m2; and tubes, plates, coils or blocks (cores) designed for such heat exchangers or condensers, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or carbon graphite;

5. Nickel or alloys with more than 40 % nickel by weight;

6. Tantalum or tantalum alloys;

7. Titanium or titanium alloys;

8. Zirconium or zirconium alloys;

9. Silicon carbide;

10. Titanium carbide; or

11. Niobium (columbium) or niobium alloys;

e.

Distillation or absorption columns of internal diameter greater than 0,1 m; and liquid distributors, vapour distributors or liquid collectors designed for such distillation or absorption columns, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or carbon graphite;

5. Nickel or alloys with more than 40 % nickel by weight;

6. Tantalum or tantalum alloys;

7. Titanium or titanium alloys;

8. Zirconium or zirconium alloys; or

9. Niobium (columbium) or niobium alloys;

f.

Remotely operated filling equipment in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight; or

2. Nickel or alloys with more than 40 % nickel by weight;

g. Technical Note:

Valves with nominal sizes greater than 10 mm and casings (valve bodies) or preformed casing liners designed for such valves, in which all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials: The nominal size is defined as the smaller of the inlet and outlet diameters.

g.

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Nickel or alloys with more than 40 % nickel by weight;

5. Tantalum or tantalum alloys;

6. Titanium or titanium alloys;

7. Zirconium or zirconium alloys;

8. Niobium (columbium) or niobium alloys; or

9. Ceramic materials as follows:

9. a.

Silicon carbide with purity of 80 % or more by weight;

b.

Aluminium oxide (alumina) with purity of 99,9 % or more by weight;

c.

Zirconium oxide (zirconia);

h.

Multi-walled piping incorporating a leak detection port, in which all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or carbon graphite;

5. Nickel or alloys with more than 40 % nickel by weight;

6. Tantalum or tantalum alloys;

7. Titanium or titanium alloys;

8. Zirconium or zirconium alloys; or

9. Niobium (columbium) or niobium alloys;

i.

Multiple-seal and seal-less pumps, with manufacturer’s specified maximum flow-rate greater than 0,6 m3/hour, or vacuum pumps with manufacturer’s specified maximum flow-rate greater than 5 m3/hour (under standard temperature (273 K (0 °C)) and pressure (101,3 kPa) conditions); and casings (pump bodies), preformed casing liners, impellers, rotors or jet pump nozzles designed for such pumps, in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Ceramics;

3. Ferrosilicon (high silicon iron alloys);

4. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

5. Glass (including vitrified or enamelled coatings or glass lining);

6. Graphite or carbon graphite;

7. Nickel or alloys with more than 40 % nickel by weight;

8. Tantalum or tantalum alloys;

9. Titanium or titanium alloys;

10. Zirconium or zirconium alloys; or

11. Niobium (columbium) or niobium alloys;

j.

Incinerators designed to destroy chemicals specified in entry 1C350, having specially designed waste supply systems, special handling facilities and an average combustion chamber temperature greater than 1273 K (1000 °C), in which all surfaces in the waste supply system that come into direct contact with the waste products are made from or lined with any of the following materials:

1. Alloys with more than 25 % nickel and 20 % chromium by weight;

2. Ceramics; or

3. Nickel or alloys with more than 40 % nickel by weight.

2BTest, Inspection and Production Equipment Technical Notes: 1.2.3.4.5.NB:Note 1:Note 2:Note 3:NB: Technical Notes: NB: Technical Note: NB:Note:Note:NB:NB: Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:Note:Note: Technical Note: Note 1:Note 2: Technical Notes: Note: Technical Note: NB:Note: Technical Note: Technical Notes: 1.2. Technical Notes: 1.2. a.

Designed for continuous operation and usable for the detection of chemical warfare agents or chemicals specified in 1C350, at concentrations of less than 0,3 mg/m3; or

b.

Designed for the detection of cholinesterase-inhibiting activity.

a. Technical Note:

Complete biological containment facilities at P3, P4 containment level; P3 or P4 (BL3, BL4, L3, L4) containment levels are as specified in the WHO Laboratory Biosafety manual (3rd edition Geneva 2004).

b. Technical Note:

Fermenters capable of cultivation of pathogenic microorganisms, viruses or capable of toxin production, without the propagation of aerosols, and having a total capacity of 20 litres or more; Fermenters include bioreactors, chemostats and continuous-flow systems.

c. Technical Note:

Centrifugal separators, capable of continuous separation without the propagation of aerosols, having all the following characteristics: Centrifugal separators include decanters.

c.

1. Flow-rate exceeding 100 litres per hour;

2. Components of polished stainless steel or titanium;

3. One or more sealing joints within the steam containment area; and

4. Capable of in situ steam sterilisation in a closed state;

d.Note:

Cross (tangential) flow filtration equipment and components as follows: 2B352.d. does not control reverse osmosis equipment, as specified by the manufacturer.

d.

1. Cross (tangential) flow filtration equipment capable of separation of pathogenic micro-organisms, viruses, toxins or cell cultures, without the propagation of aerosols, having all of the following characteristics:

1. a.

A total filtration area equal to or greater than 1 m2; and

b. Technical Note:

Having either of the following characteristics: In 2B352.d.1.b. sterlised denotes the elimination of all viable microbes from the equipment through the use of either physical (e.g. steam) or chemical agents. Disinfected denotes the destruction of potential microbial infectivity in the equipment through the use of chemical agents with a germicidal effect. Disinfection and sterilisation are distinct from sanitisation, the latter referring to cleaning procedures designed to lower the microbial content of equipment without necessarily achieving elimination of all microbial infectivity or viability.

b.

1. Capable of being sterilised or disinfected in situ; or

2. Using disposable or single-use filtration components;

2. Cross (tangential) flow filtration components (e.g. modules, elements, cassettes, cartridges, units or plates) with filtration area equal to or greater than 0,2 m2 for each component and designed for use in cross (tangential) flow filtration equipment specified in 2B352.d.;

e.

Steam sterilisable freeze drying equipment with a condenser capacity exceeding 10 kg of ice in 24 hours and less than 1000 kg of ice in 24 hours;

f.

Protective and containment equipment, as follows:

1.Note: Protective full or half suits, or hoods dependent upon a tethered external air supply and operating under positive pressure; 2B352.f.1. does not control suits designed to be worn with self-contained breathing apparatus.

2.Note: Class III biological safety cabinets or isolators with similar performance standards; In 2B352.f.2., isolators include flexible isolators, dry boxes, anaerobic chambers, glove boxes and laminar flow hoods (closed with vertical flow).

g.

Chambers designed for aerosol challenge testing with microorganisms, viruses or toxins and having a capacity of 1 m3 or greater.

2CMaterials None.

2DSoftware Note 1:Note 2:NB:

2D001Software, other than that specified in 2D002, specially designed or modified for the development, production or use of equipment specified in 2A001 or 2B001 to 2B009. 2D002Software for electronic devices, even when residing in an electronic device or system, enabling such devices or systems to function as a numerical control unit, capable of co-ordinating simultaneously more than four axes for contouring control. 2D002 does not control software specially designed or modified for the operation of machine tools not specified in Category 2. 2D002 does not control software for items specified in 2B002. See 2D001 for software for items specified in 2B002. 2D101Software specially designed or modified for the use of equipment specified in 2B104, 2B105, 2B109, 2B116, 2B117 or 2B119 to 2B122. SEE ALSO 9D004. 2D201Software specially designed for the use of equipment specified in 2B204, 2B206, 2B207, 2B209, 2B219 or 2B227. 2D202Software specially designed or modified for the development, production or use of equipment specified in 2B201. 2D351Software, other than that specified in 1D003, specially designed for use of equipment specified in 2B351.

2ETechnology Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Table — Deposition Techniques — Notes Table — Deposition Techniques — Technical Note Deposition techniques

2E001Technology according to the General Technology Note for the development of equipment or software specified in 2A, 2B or 2D. 2E002Technology according to the General Technology Note for the production of equipment specified in 2A or 2B. 2E003Other technology, as follows: 2E101Technology according to the General Technology Note for the use of equipment or software specified in 2B004, 2B009, 2B104, 2B109, 2B116, 2B119 to 2B122 or 2D101. 2E201Technology according to the General Technology Note for the use of equipment or software specified in 2A225, 2A226, 2B001, 2B006, 2B007.b., 2B007.c., 2B008, 2B009, 2B201, 2B204, 2B206, 2B207, 2B209, 2B225 to 2B232, 2D201 or 2D202. 2E301Technology according to the General Technology Note for the use of goods specified in 2B350 to 2B352. Coating Process (1) Substrate Resultant Coating Chemical Vapour Deposition (CVD) Superalloys Aluminides for internal passages Ceramics (19) and Low-expansion glasses (14) Silicides Carbides Dielectric layers (15) Diamond Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Aluminides Alloyed aluminides (2) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Diamond Diamond-like carbon (17) Sensor window materials (9) Dielectric layers (15) Diamond Diamond-like carbon (17) Thermal-Evaporation Physical Vapour Deposition (TE-PVD) Physical Vapour Deposition (PVD): Electron-Beam (EB-PVD) Superalloys Alloyed silicides Alloyed aluminides (2) MCrAlX (5) Modified zirconia (12) Silicides Aluminides Mixtures thereof (4) Ceramics (19) and Low-expansion glasses (14) Dielectric layers (15) Corrosion resistant steel (7) MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Borides Beryllium Sensor window materials (9) Dielectric layers (15) Titanium alloys (13) Borides Nitrides Ion assisted resistive heating Physical Vapour Deposition (PVD) (Ion Plating) Ceramics (19) and Low-expansion glasses (14) Dielectric layers (15) Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrix composites Dielectric layers (15) Cemented tungsten carbide (16), Silicon carbide Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Sensor window materials (9) Dielectric layers (15) Diamond-like carbon (17) Physical Vapour Deposition (PVD): Laser Vaporisation Ceramics (19) and Low-expansion glasses (14) Silicides Dielectric layers (15) Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrix composites Dielectric layers (15) Cemented tungsten carbide (16), Silicon carbide Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Sensor window materials (9) Dielectric layers (15) Diamond-like carbon Physical Vapour Deposition (PVD): Cathodic Arc Discharge Superalloys Alloyed silicides Alloyed aluminides (2) MCrAlX (5) Polymers (11) and Organic matrix composites Borides Carbides Nitrides Diamond-like carbon (17) Pack cementation (see A above for out-of-pack cementation) (10) Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Mixtures thereof (4) Titanium alloys (13) Silicides Aluminides Alloyed aluminides (2) Refractory metals and alloys (8) Silicides Oxides Plasma spraying Superalloys MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Alloyed aluminides (2) Aluminium alloys (6) MCrAlX (5) Modified zirconia (12) Silicides Mixtures thereof (4) Refractory metals and alloys (8) Aluminides Silicides Carbides Corrosion resistant steel (7) MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Titanium alloys (13) Carbides Aluminides Silicides Alloyed aluminides (2) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Slurry Deposition Refractory metals and alloys (8) Fused silicides Fused aluminides except for resistance heating elements Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Mixtures thereof (4) Sputter Deposition Superalloys Alloyed silicides Alloyed aluminides (2) Noble metal modified aluminides (3) MCrAlX (5) Modified zirconia (12) Platinum Mixtures thereof (4) Ceramics and Low-expansion glasses (14) Silicides Platinum Mixtures thereof (4) Dielectic layers (15) Diamond-like carbon (17) Titanium alloys (13) Borides Nitrides Oxides Silicides Aluminides Alloyed aluminides (2) Carbides Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Boron nitride Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Borides Dielectric layers (15) Beryllium Sensor window materials (9) Dielectric layers (15) Diamond-like carbon (17) Refractory metals and alloys (8) Aluminides Silicides Oxides Carbides Ion Implantation High temperature bearing steels Additions of Chromium Tantalum or Niobium (Columbium) Titanium alloys (13) Borides Nitrides Beryllium and Beryllium alloys Borides Cemented tungsten carbide (16) Carbides Nitrides Processes specified in Column 1 of the Table are defined as follows:

2ETechnology a.

Technology for the development of interactive graphics as an integrated part in numerical control units for preparation or modification of part programmes;

b.

Technology for metal-working manufacturing processes, as follows:

1. Technology for the design of tools, dies or fixtures specially designed for any of the following processes:

1. a.

Superplastic forming;

b.

Diffusion bonding; or

c.

Direct-acting hydraulic pressing;

2. Technical data consisting of process methods or parameters as listed below used to control:

2. a.

Superplastic forming of aluminium alloys, titanium alloys or superalloys:

1. Surface preparation;

2. Strain rate;

3. Temperature;

4. Pressure;

b.

Diffusion bonding of superalloys or titanium alloys:

1. Surface preparation;

2. Temperature;

3. Pressure;

c.

Direct-acting hydraulic pressing of aluminium alloys or titanium alloys:

1. Pressure;

2. Cycle time;

d.

Hot isostatic densification of titanium alloys, aluminium alloys or superalloys:

1. Temperature;

2. Pressure;

3. Cycle time;

c.

Technology for the development or production of hydraulic stretch-forming machines and dies therefor, for the manufacture of airframe structures;

d.

Technology for the development of generators of machine tool instructions (e.g. part programmes) from design data residing inside numerical control units;

e.

Technology for the development of integration software for incorporation of expert systems for advanced decision support of shop floor operations into numerical control units;

f.Note:NB:

Technology for the application of inorganic overlay coatings or inorganic surface modification coatings (specified in column 3 of the following table) to non-electronic substrates (specified in column 2 of the following table), by processes specified in column 1 of the following table and defined in the Technical Note. The table and Technical Note appear after entry 2E301. This table should be read to specify the technology of a particular Coating Process only when the Resultant Coating in column 3 is in a paragraph directly across from the relevant Substrate under column 2. For example, Chemical Vapour Deposition (CVD) coating process technical data are included for the application of silicides to carbon-carbon, ceramic and metal matrix composites substrates, but are not included for the application of silicides to cemented tungsten carbide (16), silicon carbide (18) substrates. In the second case, the resultant coating is not listed in the paragraph under column 3 directly across from the paragraph under column 2 listing cemented tungsten carbide (16), silicon carbide (18).

2ETechnology Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Table — Deposition Techniques — Notes Deposition techniques

1. The term coating process includes coating repair and refurbishing as well as original coating.

2. The term alloyed aluminide coating includes single or multiple-step coatings in which an element or elements are deposited prior to or during application of the aluminide coating, even if these elements are deposited by another coating process. It does not, however, include the multiple use of single-step pack cementation processes to achieve alloyed aluminides.

3. The term noble metal modified aluminide coating includes multiple-step coatings in which the noble metal or noble metals are laid down by some other coating process prior to application of the aluminide coating.

4. The term mixtures thereof includes infiltrated material, graded compositions, co-deposits and multilayer deposits and are obtained by one or more of the coating processes specified in the Table.

5. MCrAlX refers to a coating alloy where M equals cobalt, iron, nickel or combinations thereof and X equals hafnium, yttrium, silicon, tantalum in any amount or other intentional additions over 0,01 % by weight in various proportions and combinations, except:

5. a.

CoCrAlY coatings which contain less than 22 % by weight of chromium, less than 7 % by weight of aluminium and less than 2 % by weight of yttrium;

b.

CoCrAlY coatings which contain 22 to 24 % by weight of chromium, 10 to 12 % by weight of aluminium and 0,5 to 0,7 % by weight of yttrium; or

c.

NiCrAlY coatings which contain 21 to 23 % by weight of chromium, 10 to 12 % by weight of aluminium and 0,9 to 1,1 % by weight of yttrium.

6. The term aluminium alloys refers to alloys having an ultimate tensile strength of 190 MPa or more measured at 293 K (20 °C).

7. The term corrosion resistant steel refers to AISI (American Iron and Steel Institute) 300 series or equivalent national standard steels.

8. Refractory metals and alloys include the following metals and their alloys: niobium (columbium), molybdenum, tungsten and tantalum.

9. Sensor window materials, as follows: alumina, silicon, germanium, zinc sulphide, zinc selenide, gallium arsenide, diamond, gallium phosphide, sapphire and the following metal halides: sensor window materials of more than 40 mm diameter for zirconium fluoride and hafnium fluoride.

10. Technology for single-step pack cementation of solid airfoils is not controlled by Category 2.

11. Polymers, as follows: polyimide, polyester, polysulphide, polycarbonates and polyurethanes.

12. Modified zirconia refers to additions of other metal oxides (e.g. calcia, magnesia, yttria, hafnia, rare earth oxides) to zirconia in order to stabilise certain crystallographic phases and phase compositions. Thermal barrier coatings made of zirconia, modified with calcia or magnesia by mixing or fusion, are not controlled.

13. Titanium alloys refers only to aerospace alloys having an ultimate tensile strength of 900 MPa or more measured at 293 K (20 °C).

14. Low-expansion glasses refers to glasses which have a coefficient of thermal expansion of 1 × 10–7 K–1 or less measured at 293 K (20 °C).

15. Dielectric layers are coatings constructed of multi-layers of insulator materials in which the interference properties of a design composed of materials of various refractive indices are used to reflect, transmit or absorb various wavelength bands. Dielectric layers refers to more than four dielectric layers or dielectric/metal composite layers.

16. Cemented tungsten carbide does not include cutting and forming tool materials consisting of tungsten carbide/(cobalt, nickel), titanium carbide/(cobalt, nickel), chromium carbide/nickel-chromium and chromium carbide/nickel.

17. Technology specially designed to deposit diamond-like carbon on any of the following is not controlled: magnetic disk drives and heads, equipment for the manufacture of disposables, valves for faucets, acoustic diaphragms for speakers, engine parts for automobiles, cutting tools, punching-pressing dies, office automation equipment, microphones or medical devices or moulds, for casting or moulding of plastics, manufactured from alloys containing less than 5 % beryllium.

18. Silicon carbide does not include cutting and forming tool materials.

19. Ceramic substrates, as used in this entry, does not include ceramic materials containing 5 % by weight, or greater, clay or cement content, either as separate constituents or in combination.

2ETechnology Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Table — Deposition Techniques — Notes Table — Deposition Techniques — Technical Note Deposition techniques

a.NB 1NB 2NB 3

Chemical Vapour Deposition (CVD) is an overlay coating or surface modification coating process wherein a metal, alloy, composite, dielectric or ceramic is deposited upon a heated substrate. Gaseous reactants are decomposed or combined in the vicinity of a substrate resulting in the deposition of the desired elemental, alloy or compound material on the substrate. Energy for this decomposition or chemical reaction process may be provided by the heat of the substrate, a glow discharge plasma, or laser irradiation. CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, controlled nucleation thermal deposition (CNTD), plasma enhanced or plasma assisted CVD processes. Pack denotes a substrate immersed in a powder mixture. The gaseous reactants used in the out-of-pack process are produced using the same basic reactions and parameters as the pack cementation process, except that the substrate to be coated is not in contact with the powder mixture.

b.

Thermal Evaporation-Physical Vapour Deposition (TE-PVD) is an overlay coating process conducted in a vacuum with a pressure less than 0,1 Pa wherein a source of thermal energy is used to vaporise the coating material. This process results in the condensation, or deposition, of the evaporated species onto appropriately positioned substrates. The addition of gases to the vacuum chamber during the coating process to synthesise compound coatings is an ordinary modification of the process. The use of ion or electron beams, or plasma, to activate or assist the coating’s deposition is also a common modification in this technique. The use of monitors to provide in-process measurement of optical characteristics and thickness of coatings can be a feature of these processes. Specific TE-PVD processes are as follows:

1. Electron Beam PVD uses an electron beam to heat and evaporate the material which forms the coating;

2. Ion Assisted Resistive Heating PVD employs electrically resistive heating sources in combination with impinging ion beam(s) to produce a controlled and uniform flux of evaporated coating species;

3. Laser Vaporisation uses either pulsed or continuous wave laser beams to vaporise the material which forms the coating;

4.NB: Cathodic Arc Deposition employs a consumable cathode of the material which forms the coating and has an arc discharge established on the surface by a momentary contact of a ground trigger. Controlled motion of arcing erodes the cathode surface creating a highly ionised plasma. The anode can be either a cone attached to the periphery of the cathode, through an insulator, or the chamber. Substrate biasing is used for non-line-of-sight deposition. This definition does not include random cathodic arc deposition with non-biased substrates.

5. Ion Plating is a special modification of a general TE-PVD process in which a plasma or an ion source is used to ionise the species to be deposited, and a negative bias is applied to the substrate in order to facilitate the extraction of the species from the plasma. The introduction of reactive species, evaporation of solids within the process chamber, and the use of monitors to provide in-process measurement of optical characteristics and thicknesses of coatings are ordinary modifications of the process.

c.

Pack Cementation is a surface modification coating or overlay coating process wherein a substrate is immersed in a powder mixture (a pack), that consists of: The substrate and powder mixture is contained within a retort which is heated to between 1030 K (757 °C) and 1375 K (1102 °C) for sufficient time to deposit the coating.

1. The metallic powders that are to be deposited (usually aluminium, chromium, silicon or combinations thereof);

2. An activator (normally a halide salt); and

3. An inert powder, most frequently alumina.

d.NB 1NB 2 Plasma Spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed. Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying. Low pressure means less than ambient atmospheric pressure. High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20 °C) at 0,1 MPa.

e.

Slurry Deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating.

f.NB 1NB 2 Sputter Deposition is an overlay coating process based on a momentum transfer phenomenon, wherein positive ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on an appropriately positioned substrate. The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials. Low-energy ion beams (less than 5 keV) can be used to activate the deposition.

g.

Ion Implantation is a surface modification coating process in which the element to be alloyed is ionised, accelerated through a potential gradient and implanted into the surface region of the substrate. This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition.

CATEGORY 3 ELECTRONICS

3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:NB:Note:

The control status of equipment and components described in 3A001 or 3A002, other than those described in 3A001.a.3. to 3A001.a.10. or 3A001.a.12., which are specially designed for or which have the same functional characteristics as other equipment is determined by the control status of the other equipment. The control status of integrated circuits described in 3A001.a.3. to 3A001.a.9. or 3A001.a.12. which are unalterably programmed or designed for a specific function for another equipment is determined by the control status of the other equipment. When the manufacturer or applicant cannot determine the control status of the other equipment, the control status of the integrated circuits is determined in 3A001.a.3. to 3A001.a.9. and 3A001.a.12. 3A001Electronic components and specially designed components therefor, as follows: 3A002General purpose electronic equipment and accessories therefor, as follows: 3A003Spray cooling thermal management systems employing closed loop fluid handling and reconditioning equipment in a sealed enclosure where a dielectric fluid is sprayed onto electronic components using specially designed spray nozzles that are designed to maintain electronic components within their operating temperature range, and specially designed components therefor. 3A101Electronic equipment, devices and components, other than those specified in 3A001, as follows: 3A101.b. above does not specify equipment specially designed for medical purposes. 3A102Thermal batteries designed or modified for missiles. In 3A102 thermal batteries are single use batteries that contain a solid non-conducting inorganic salt as the electrolyte. These batteries incorporate a pyrolytic material that, when ignited, melts the electrolyte and activates the battery. In 3A102 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 3A201Electronic components, other than those specified in 3A001, as follows: 3A225Frequency changers or generators, other than those specified in 0B001.b.13., having all of the following characteristics: Frequency changers in 3A225 are also known as converters or inverters. 3A226High-power direct current power supplies, other than those specified in 0B001.j.6., having both of the following characteristics: 3A227High-voltage direct current power supplies, other than those specified in 0B001.j.5., having both of the following characteristics: 3A228Switching devices, as follows: 3A229High-current pulse generators as follows: SEE ALSO MILITARY GOODS CONTROLS. See 1A007.a. for explosive detonator firing sets. 3A229.b. includes xenon flash-lamp drivers. In 3A229.b.5. rise time is defined as the time interval from 10 % to 90 % current amplitude when driving a resistive load. 3A230High-speed pulse generators having both of the following characteristics: In 3A230, pulse transition time is defined as the time interval between 10 % and 90 % voltage amplitude. 3A231Neutron generator systems, including tubes, having both of the following characteristics: 3A232Multipoint initiation systems, other than those specified in 1A007, as follows: SEE ALSO MILITARY GOODS CONTROLS. See 1A007.b. for detonators. 3A232 does not control detonators using only primary explosives, such as lead azide. 3A233Mass spectrometers, other than those specified in 0B002.g., capable of measuring ions of 230 atomic mass units or greater and having a resolution of better than 2 parts in 230, as follows, and ion sources therefor:

3ASystems, Equipment and Components Note 1:Note 2:NB:

a.Note 1:Note 2:

General purpose integrated circuits, as follows: The control status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001.a. Integrated circuits include the following types:

Monolithic integrated circuits;

Hybrid integrated circuits;

Multichip integrated circuits;

Film type integrated circuits, including silicon-on-sapphire integrated circuits;

Optical integrated circuits.

1. Integrated circuits designed or rated as radiation hardened to withstand any of the following:

1. a.

A total dose of 5 × 103 Gy (silicon) or higher;

b.

A dose rate upset of 5 × 106 Gy (silicon)/s or higher; or

c.Note:

A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1013 n/cm2 or higher on silicon, or its equivalent for other materials; 3A001.a.1.c. does not apply to Metal Insulator Semiconductors (MIS).

2.Note: Microprocessor microcircuits, microcomputer microcircuits, microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or optical integrated circuits designed for signal processing, field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, electrical erasable programmable read-only memories (EEPROMs), flash memories or static random-access memories (SRAMs), having any of the following: 3A001.a.2. does not apply to integrated circuits for civil automobiles or railway train applications.

2. a.

Rated for operation at an ambient temperature above 398 K (125 °C);

b.

Rated for operation at an ambient temperature below 218 K (– 55 °C); or

c.

Rated for operation over the entire ambient temperature range from 218 K (– 55 °C) to 398 K (125 °C);

3.Note: Microprocessor microcircuits, microcomputer microcircuits and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; 3A001.a.3. includes digital signal processors, digital array processors and digital coprocessors.

4. Not used;

5. Analogue-to-Digital Converter (ADC) and Digital-to-Analogue Converter (DAC) integrated circuits, as follows:

5. a.NB: Technical Notes: 1.2.3.4.5.6.7.8.9.

ADCs having any of the following: SEE ALSO 3A101 A resolution of n bit corresponds to a quantisation of 2n levels. The number of bits in the output word is equal to the resolution of the ADC. The output rate is the maximum output rate of the converter, regardless of the architecture or oversampling. For multiple channel ADCs, the outputs are not aggregated and the output rate is the maximum output rate of any single channel. For interleaved ADCs or for multiple channel ADCs that are specified to have an interleaved mode of operation, the outputs are aggregated and the output rate is the maximum combined total output rate of all of the outputs. Vendors may also refer to the output rate as sampling rate, conversion rate or throughput rate. It is often specified in megahertz (MHz) or mega samples per second (MSPS). For the purpose of measuring output rate, one output word per second is equivalent to one Hertz or one sample per second. Multiple channel ADCs are defined as devices which integrate more than one ADC, designed so that each ADC has a separate analogue input. Interleaved ADCs are defined as devices which have multiple ADC units that sample the same analogue input at different times such that when the outputs are aggregated, the analogue input has been effectively sampled and converted at a higher sampling rate.

a.NB:

1. A resolution of 8 bit or more, but less than 10 bit, with an output rate greater than 500 million words per second;

2. A resolution of 10 bit or more, but less than 12 bit, with an output rate greater than 300 million words per second;

3. A resolution of 12 bit with an output rate greater than 200 million words per second;

4. A resolution of more than 12 bit, but equal to or less than 14 bit, with an output rate greater than 125 million words per second; or

5. A resolution of more than 14 bit with an output rate greater than 20 million words per second;

b. Technical Notes: 1.2.3.4.

Digital-to-Analogue Converters (DAC) having any of the following: Spurious Free Dynamic Range (SFDR) is defined as the ratio of the RMS value of the carrier frequency (maximum signal component) at the input of the DAC to the RMS value of the next largest noise or harmonic distortion component at its output. SFDR is determined directly from the specification table or from the characterisation plots of SFDR versus frequency. A signal is defined to be full scale when its amplitude is greater than – 3 dBfs (full scale). Adjusted update rate for DACs:

b.

1. A resolution of 10 bit or more with an adjusted update rate of 3500 MSPS or greater; or

2. A resolution of 12 bit or more with an adjusted update rate of equal to or greater than 1250 MSPS and having any of the following:

2. a.

A settling time less than 9 ns to 0,024 % of full scale from a full scale step; or

b.

A Spurious Free Dynamic Range (SFDR) greater than 68 dBc (carrier) when synthesising a full scale analogue signal of 100 MHz or the highest full scale analogue signal frequency specified below 100 MHz.

b. Technical Notes: 1.2.3.4.

a.

For conventional (non-interpolating) DACs, the adjusted update rate is the rate at which the digital signal is converted to an analogue signal and the output analogue values are changed by the DAC. For DACs where the interpolation mode may be bypassed (interpolation factor of one), the DAC should be considered as a conventional (non-interpolating) DAC.

b.

For interpolating DACs (oversampling DACs), the adjusted update rate is defined as the DAC update rate divided by the smallest interpolating factor. For interpolating DACs, the adjusted update rate may be referred to by different terms including:

input data rate

input word rate

input sample rate

maximum total input bus rate

maximum DAC clock rate for DAC clock input.

6. Electro-optical and optical integrated circuits, designed for signal processing and having all of the following:

6. a.

One or more than one internal laser diode;

b.

One or more than one internal light detecting element; and

c.

Optical waveguides;

7.Note: Technical Notes:

Field programmable logic devices having either of the following: 3A001.a.7. includes:

7. a.

A maximum number of digital input/outputs greater than 200; or

b.

A system gate count of greater than 230000;

Simple Programmable Logic Devices (SPLDs)

Complex Programmable Logic Devices (CPLDs)

Field Programmable Gate Arrays (FPGAs)

Field Programmable Logic Arrays (FPLAs)

Field Programmable Interconnects (FPICs)

7.Note: Technical Notes:

1. Field programmable logic devices are also known as field programmable gate or field programmable logic arrays.

2. Maximum number of digital input/outputs in 3A001.a.7.a. is also referred to as the maximum user input/outputs or maximum available input/outputs, whether the integrated circuit is packaged or bare die.

8. Not used;

9. Neural network integrated circuits;

10. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:

10. a.

More than 1500 terminals;

b.

A typical basic gate propagation delay time of less than 0,02 ns; or

c.

An operating frequency exceeding 3 GHz;

11. Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having either of the following:

11. a.

An equivalent gate count of more than 3000 (2 input gates); or

b.

A toggle frequency exceeding 1,2 GHz;

12. Technical Note:

Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N) /20480 ms, where N is the number of points; When N is equal to 1024 points, the formula in 3A001.a.12. gives an execution time of 500 μs.

b.

Microwave or millimetre wave components, as follows:

1:Note 2: Electronic vacuum tubes and cathodes, as follows: 3A001.b.1. does not control tubes designed or rated for operation in any frequency band and having both of the following: 3A001.b.1. does not control non-space-qualified tubes having all of the following:

1.Note 1: a.

Does not exceed 31,8 GHz; and

b.

Is allocated by the ITU for radio-communications services, but not for radio-determination.

1:Note 2: a.

An average output power equal to or less than 50 W; and

b.

Designed or rated for operation in any frequency band and having all of the following:

1. Exceeds 31,8 GHz but does not exceed 43,5 GHz; and

2. Is allocated by the ITU for radio-communications services, but not for radio-determination.

a.

Travelling wave tubes, pulsed or continuous wave, as follows:

1. Tubes operating at frequencies exceeding 31,8 GHz;

2. Tubes having a cathode heater element with a turn on time to rated RF power of less than 3 seconds;

3. Coupled cavity tubes, or derivatives thereof, with a fractional bandwidth of more than 7 % or a peak power exceeding 2,5 kW;

4. Helix tubes, or derivatives thereof, having any of the following:

4. a.

An instantaneous bandwidth of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5;

b.

An instantaneous bandwidth of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or

c.

Being space-qualified;

b.

Crossed-field amplifier tubes with a gain of more than 17 dB;

c.

Impregnated cathodes designed for electronic tubes producing a continuous emission current density at rated operating conditions exceeding 5 A/cm2;

2.Note 1:Note 2:Note 3:

Microwave Monolithic Integrated Circuits (MMIC) power amplifiers having any of the following: Not used. The control status of the MMIC whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.2.a. to 3A001.b.2.f., is determined by the lowest average output power control threshold. Notes 1 and 2 in 3A mean that 3A001.b.2. does not control MMICs if they are specially designed for other applications, e.g. telecommunications, radar, automobiles.

2. a.

Rated for operation at frequencies exceeding 3,2 GHz up to and including 6,8 GHz and with an average output power greater than 4 W (36 dBm) with a fractional bandwidth greater than 15 %;

b.

Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz and with an average output power greater than 1 W (30 dBm) with a fractional bandwidth greater than 10 %;

c.

Rated for operation at frequencies exceeding 16 GHz up to and including 31,8 GHz and with an average output power greater than 0,8 W (29 dBm) with a fractional bandwidth greater than 10 %;

d.

Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz and with an average output power greater than 0,1 nW;

e.

Rated for operation at frequencies exceeding 37,5 GHz up to and including 43,5 GHz and with an average output power greater than 0,25 W (24 dBm) with a fractional bandwidth greater than 10 %; or

f.

Rated for operation at frequencies exceeding 43,5 GHz and with an average output power greater than 0,1 nW;

3.Note: Discrete microwave transistors having any of the following: The control status of a transistor whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.3.a. to 3A001.b.3.e., is determined by the lowest average output power control threshold.

3. a.

Rated for operation at frequencies exceeding 3,2 GHz up to and including 6,8 GHz and having an average output power greater than 60 W (47,8 dBm);

b.

Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and having an average output power greater than 20 W (43 dBm);

c.

Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz and having an average output power greater than 0,5 W (27 dBm);

d.

Rated for operation at frequencies exceeding 37,5 GHz up to and including 43,5 GHz and having an average output power greater than 1 W (30 dBm); or

e.

Rated for operation at frequencies exceeding 43,5 GHz and having an average output power greater than 0,1 nW;

4. Technical Note: NB:Note 1:Note 2:

Microwave solid state amplifiers and microwave assemblies/modules containing microwave solid state amplifiers, having any of the following: 3,2 GHz should be used as the lowest operating frequency (fGHz) in the formula in 3A001.b.4.f.3., for amplifiers that have a rated operating range extending downward to 3,2 GHz and below [d ≤ 15 cm*GHz/3,2 GHz]. MMIC power amplifiers should be evaluated against the criteria in 3A001.b.2. Not used. The control status of an item whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.4.a. to 3A001.b.4.e., is determined by the lowest average output power control threshold.

4. a.

Rated for operation at frequencies exceeding 3,2 GHz up to and including 6,8 GHz and with an average output power greater than 60 W (47,8 dBm) with a fractional bandwidth greater than 15 %;

b.

Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and with an average output power greater than 15 W (42 dBm) with a fractional bandwidth greater than 10 %;

c.

Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz and with an average output power greater than 0,1 nW;

d.

Rated for operation at frequencies exceeding 37,5 GHz up to and including 43,5 GHz and with an average output power greater than 1 W (30 dBm) with a fractional bandwidth greater than 10 %;

e.

Rated for operation at frequencies exceeding 43,5 GHz and with an average output power greater than 0,1 nW; or

f.

Rated for operation at frequencies above 3,2 GHz and having all of the following:

1. An average output power (in watts), P, greater than 150 divided by the maximum operating frequency (in GHz) squared [P > 150 W*GHz2/fGHz2];

2. A fractional bandwidth of 5 % or greater; and

3. Any two sides perpendicular to one another with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15 cm*GHz/ fGHz];

5. Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs and having either of the following:

5. a.

A band-pass bandwidth of more than 0,5 % of centre frequency; or

b.

A band-stop bandwidth of less than 0,5 % of centre frequency;

6. Not used;

7. Converters and harmonic mixers, designed to extend the frequency range of equipment described in 3A002.c., 3A002.d., 3A002.e. or 3A002.f. beyond the limits stated therein;

8.Note: Microwave power amplifiers containing tubes specified in 3A001.b.1. and having all of the following: 3A001.b.8. does not control equipment designed or rated for operation in any frequency band which is allocated by the ITU for radio-communications services, but not for radio-determination.

8. a.

Operating frequencies above 3 GHz;

b.

An average output power to mass ratio exceeding 80 W/kg; and

c.

A volume of less than 400 cm3;

9. Technical Notes: 1.2.

Microwave power modules (MPM) consisting of, at least, a travelling wave tube, a microwave monolithic integrated circuit and an integrated electronic power conditioner and having all of the following: To calculate the volume in 3A001.b.9.b., the following example is provided: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm3/W = 200 cm3. The turn-on time in 3A001.b.9.a. refers to the time from fully-off to fully operational, i.e. it includes the warm-up time of the MPM.

9. a.

A turn-on time from off to fully operational in less than 10 seconds;

b.

A volume less than the maximum rated power in Watts multiplied by 10 cm3/W; and

c.

An instantaneous bandwidth greater than 1 octave (fmax. > 2fmin.) and having either of the following:

1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or

2. A frequency greater than 18 GHz;

10. Technical Note:

Oscillators or oscillator assemblies, designed to operate with all of the following: In 3A001.b.10., F is the offset from the operating frequency in Hz and f is the operating frequency in MHz.

10. a.

A single sideband (SSB) phase noise, in dBc/Hz, better than –(126 + 20log10F-20log10f) for 10 Hz < F < 10 kHz; and

b.

A single sideband (SSB) phase noise, in dBc/Hz, better than –(114 + 20log10F-20log10f) for 10 kHz ≤ F < 500 kHz;

11.NB: Frequency synthesiser electronic assemblies having a frequency switching time as specified by any of the following: For general purpose signal analysers, signal generators, network analysers and microwave test receivers, see 3A002.c., 3A002.d., 3A002.e. and 3A002.f., respectively.

11. a.

Less than 312 ps;

b.

Less than 100 μs for any frequency change exceeding 1,6 GHz within the synthesised frequency range exceeding 3,2 GHz but not exceeding 10,6 GHz;

c.

Less than 250 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 10,6 GHz but not exceeding 31,8 GHz;

d.

Less than 500 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31,8 GHz but not exceeding 43,5 GHz; or

e.

Less than 1 ms within the synthesised frequency range exceeding 43,5 GHz.

c.Note:

Acoustic wave devices as follows and specially designed components therefor: 3A001.c. does not control acoustic wave devices that are limited to a single band pass, low pass, high pass or notch filtering, or resonating function.

c.

1. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following:

1. a.

A carrier frequency exceeding 6 GHz;

b.

A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following:

1. A frequency side-lobe rejection exceeding 65 dB;

2. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;

3. A bandwidth greater than 250 MHz; or

4. A dispersive delay of more than 10 μs; or

c. Technical Note:

A carrier frequency of 1 GHz or less and having any of the following: Frequency side-lobe rejection is the maximum rejection value specified in data sheet.

c.

1. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;

2. A dispersive delay of more than 10 μs; or

3. A frequency side-lobe rejection exceeding 65 dB and a bandwidth greater than 100 MHz;

2. Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz;

3. Acoustic-optic signal processing devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;

d.

Electronic devices and circuits containing components, manufactured from superconductive materials, specially designed for operation at temperatures below the critical temperature of at least one of the superconductive constituents and having either of the following:

1. Current switching for digital circuits using superconductive gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10–14 J; or

2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10000;

e.

High energy devices as follows:

1. Technical Notes: 1.2.3.4.Note:

Cells as follows: For the purpose of 3A001.e.1.,energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in ohms and the mass in kilograms. For the purpose of 3A001.e.1., a cell is defined as an electrochemical device, which has positive and negative electrodes, an electrolyte, and is a source of electrical energy. It is the basic building block of a battery. For the purpose of 3A001.e.1.a., a primary cell is a cell that is not designed to be charged by any other source. For the purpose of 3A001.e.1.b., a secondary cell is a cell that is designed to be charged by an external electrical source. 3A001.e.1. does not control batteries, including single-cell batteries.

1. a.

Primary cells having an energy density exceeding 550 Wh/kg at 20 °C;

b.

Secondary cells having an energy density exceeding 250 Wh/kg at 20 °C;

2.NB: High energy storage capacitors as follows: SEE ALSO 3A201.a.

2.NB: a.

Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 250 J/kg; and

3. A total energy equal to or more than 25 kJ;

b.

Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 50 J/kg;

3. A total energy equal to or more than 100 J; and

4. A charge/discharge cycle life equal to or more than 10000;

3.NB:Note: Superconductive electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following: SEE ALSO 3A201.b. 3A001.e.3. does not control superconductive electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment.

3.NB:Note: a.

Energy delivered during the discharge exceeding 10 kJ in the first second;

b.

Inner diameter of the current carrying windings of more than 250 mm; and

c.

Rated for a magnetic induction of more than 8 T or overall current density in the winding of more than 300 A/mm2;

4. Technical Note:

Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are space-qualified, having a minimum average efficiency exceeding 20 % at an operating temperature of 301 K (28 °C) under simulated AM0 illumination with an irradiance of 1367 watts per square metre (W/m2); AM0, or Air Mass Zero, refers to the spectral irradiance of sun light in the earth’s outer atmosphere when the distance between the earth and sun is one astronomical unit (AU).

f.

Rotary input type absolute position encoders having an accuracy equal to or less (better) than ± 1,0 second of arc;

g.Note 1:Note 2: Technical Note:

Solid-state pulsed power switching thyristor devices and thyristor modules, using either electrically, optically, or electron radiation controlled switch methods and having any of the following: 3A001.g. includes: 3A001.g. does not control thyristor devices and thyristor modules incorporated into equipment designed for civil railway or civil aircraft applications. For the purposes of 3A001.g., a thyristor module contains one or more thyristor devices.

g.

1. A maximum turn-on current rate of rise (di/dt) greater than 30000 A/μs and off-state voltage greater than 1100 V; or

2. A maximum turn-on current rate of rise (di/dt) greater than 2000 A/μs and having both of the following:

2. a.

An off-state peak voltage equal to or greater than 3000 V; and

b.

A peak (surge) current equal to or greater than 3000 A.

Silicon Controlled Rectifiers (SCRs)

Electrical Triggering Thyristors (ETTs)

Light Triggering Thyristors (LTTs)

Integrated Gate Commutated Thyristors (IGCTs)

Gate Turn-off Thyristors (GTOs)

MOS Controlled Thyristors (MCTs)

Solidtrons

h.Note 1:Note 2:Note 3: Technical Note:

Solid-state power semiconductor switches, diodes, or modules, having all of the following: Repetitive peak off-state voltage in 3A001.h. includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage. 3A001.h. includes: 3A001.h. does not control switches, diodes, or modules incorporated into equipment designed for civil automobile, civil railway or civil aircraft applications. For the purposes of 3A001.h., modules contain one or more solid-state power semiconductor switches or diodes.

h.

1. Rated for a maximum operating junction temperature greater than 488 K (215 °C);

2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

3. Continuous current greater than 1 A.

Junction Field Effect Transistors (JFETs)

Vertical Junction Field Effect Transistors (VJFETs)

Metal Oxide Semiconductor Field effect Transistors (MOSFETs)

Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOSFET)

Insulated Gate Bipolar Transistor (IGBT)

High Electron Mobility Transistors (HEMTs)

Bipolar Junction Transistors (BJTs)

Thyristors and Silicon Controlled Rectifiers (SCRs)

Gate Turn-Off Thyristors (GTOs)

Emitter Turn-Off Thyristors (ETOs)

PiN Diodes

Schottky Diodes

a.

Recording equipment as follows and specially designed test tape therefor:

1.Note: Analogue instrumentation magnetic tape recorders, including those permitting the recording of digital signals (e.g. using a high density digital recording (HDDR) module), having any of the following: Analogue magnetic tape recorders specially designed for civilian video purposes are not considered to be instrumentation tape recorders.

1. a.

A bandwidth exceeding 4 MHz per electronic channel or track;

b.

A bandwidth exceeding 2 MHz per electronic channel or track and having more than 42 tracks; or

c.

A time displacement (base) error, measured in accordance with applicable IRIG or EIA documents, of less than ± 0,1 μs;

2.Note: Digital video magnetic tape recorders having a maximum digital interface transfer rate exceeding 360 Mbit/s; 3A002.a.2. does not control digital video magnetic tape recorders specially designed for television recording using a signal format, which may include a compressed signal format, standardised or recommended by the ITU, the IEC, the SMPTE, the EBU, the ETSI or the IEEE for civil television applications.

3.Note: Digital instrumentation magnetic tape data recorders employing helical scan techniques or fixed head techniques and having either of the following: 3A002.a.3. does not control analogue magnetic tape recorders equipped with HDDR conversion electronics and configured to record only digital data.

3. a.

A maximum digital interface transfer rate exceeding 175 Mbit/s; or

b.

Being space-qualified;

4. Equipment having a maximum digital interface transfer rate exceeding 175 Mbit/s and designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders;

5. Technical Notes: 1.2.

Waveform digitisers and transient recorders, having both of the following: For those instruments with a parallel bus architecture, the continuous throughput rate is the highest word rate multiplied by the number of bits in a word. Continuous throughput is the fastest data rate the instrument can output to mass storage without the loss of any information whilst sustaining the sampling rate and analogue-to-digital conversion.

5. a.

Digitising rate equal to or more than 200 million samples per second and a resolution of 10 bit or more; and

b.

A continuous throughput of 2 Gbit/s or more;

6. Digital instrumentation data recorders using magnetic disk storage technique and having both of the following:

6. a.

Digitising rate equal to or more than 100 million samples per second and a resolution of 8 bit or more; and

b.

A continuous throughput of 1 Gbit/s or more;

b.

Not used;

c.

Radio-frequency signal analysers as follows:

1. Signal analysers having a 3 dB resolution bandwidth (RBW) exceeding 10 MHz anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37,5 GHz;

2. Signal analysers having Displayed Average Noise Level (DANL) less (better) than - 150 dBm/Hz anywhere within the frequency range exceeding 43,5 GHz but not exceeding 70 GHz;

3. Signal analysers having a frequency exceeding 70 GHz;

4.Note: Dynamic signal analysers having a real-time bandwidth exceeding 40 MHz; 3A002.c.4. does not control those dynamic signal analysers using only constant percentage bandwidth filters (also known as octave or fractional octave filters).

d.Note 1.:Note 2.: Technical Notes: 1.2.

Frequency synthesised signal generators producing output frequencies, the accuracy and short term and long term stability of which are controlled, derived from or disciplined by the internal master reference oscillator, and having any of the following: For the purpose of 3A002.d., frequency synthesised signal generators include arbitrary waveform and function generators. 3A002.d. does not control equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result. Arbitrary waveform and function generators are normally specified by sample rate (e.g. GSample/s), which is converted to the RF domain by the Nyquist factor of two. Thus, a 1 GSample/s arbitrary waveform has a direct output capability of 500 MHz. Or, when oversampling is used, the maximum direct output capability is proportionately lower. For the purposes of 3A002.d.1., pulse duration is defined as the time interval between the leading edge of the pulse achieving 90 % of the peak and the trailing edge of the pulse achieving 10 % of the peak.

d.

1. Specified to generate a pulse duration of less than 100 ns anywhere within the synthesised frequency range exceeding 31,8 GHz but not exceeding 70 GHz;

2. An output power exceeding 100 mW (20 dBm) anywhere within the synthesised frequency range exceeding 43,5 GHz but not exceeding 70 GHz;

3. A frequency switching time as specified by any of the following:

3. a.

Less than 312 ps;

b.

Less than 100 μs for any frequency change exceeding 1,6 GHz within the synthesised frequency range exceeding 3,2 GHz but not exceeding 10,6 GHz;

c.

Less than 250 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 10,6 GHz but not exceeding 31,8 GHz;

d.

Less than 500 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31,8 GHz but not exceeding 43,5 GHz;

e.

Less than 1 ms for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 43,5 GHz but not exceeding 56 GHz; or

f.

Less than 1 ms for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 56 GHz but not exceeding 70 GHz;

4. Technical Note:

At synthesised frequencies exceeding 3,2 GHz but not exceeding 70 GHz, and having both of the following: In 3A002.d.4., F is the offset from the operating frequency in Hz and f is the operating frequency in MHz;

4. a.

A single sideband (SSB) phase noise, in dBc/Hz, better than –(126 + 20log10F - 20log10f) for 10 Hz < F < 10 kHz; and

b.

A single sideband (SSB) phase noise, in dBc/Hz, better than –(114 + 20log10F - 20log10f) for 10 kHz ≤ F < 500 kHz; or

5. A maximum synthesised frequency exceeding 70 GHz;

e.

Network analysers having either of the following:

1. Maximum operating frequency exceeding 43,5 GHz and output power exceeding 31,62 mW (15 dBm); or

2. Maximum operating frequency exceeding 70 GHz;

f.

Microwave test receivers having both of the following:

1. A maximum operating frequency exceeding 43,5 GHz; and

2. Being capable of measuring amplitude and phase simultaneously;

g.

Atomic frequency standards being any of the following:

1. Space-qualified;

2. Non-rubidium and having a long-term stability less (better) than 1 × 10–11/month; or

3. Non-space-qualified and having all of the following:

3. a.

Being a rubidium standard;

b.

Long-term stability less (better) than 1 × 10–11/month; and

c.

Total power consumption of less than 1 W.

a.

Analogue-to-digital converters, usable in missiles, designed to meet military specifications for ruggedised equipment;

b.

Accelerators capable of delivering electromagnetic radiation produced by bremsstrahlung from accelerated electrons of 2 MeV or greater, and systems containing those accelerators.

3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. a.

Capacitors having either of the following sets of characteristics:

1. a.

Voltage rating greater than 1,4 kV;

b.

Energy storage greater than 10 J;

c.

Capacitance greater than 0,5 μF; and

d.

Series inductance less than 50 nH; or

2. a.

Voltage rating greater than 750 V;

b.

Capacitance greater than 0,25 μF; and

c.

Series inductance less than 10 nH;

b.Note:

Superconducting solenoidal electromagnets having all of the following characteristics: 3A201.b. does not control magnets specially designed for and exported as parts of medical nuclear magnetic resonance (NMR) imaging systems. The phrase as part of does not necessarily mean physical part in the same shipment; separate shipments from different sources are allowed, provided the related export documents clearly specify that the shipments are dispatched as part of the imaging systems.

b.

1. Capable of creating magnetic fields greater than 2 T;

2. A ratio of length to inner diameter greater than 2;

3. Inner diameter greater than 300 mm; and

4. Magnetic field uniform to better than 1 % over the central 50 % of the inner volume;

c.Note: Technical Notes: 1.2.3.4.

Flash X-ray generators or pulsed electron accelerators having either of the following sets of characteristics: 3A201.c. does not control accelerators that are component parts of devices designed for purposes other than electron beam or X-ray radiation (electron microscopy, for example) nor those designed for medical purposes: The figure of merit K is defined as: K = 1,7 × 103 × V2,65 × Q V is the peak electron energy in million electron volts. If the accelerator beam pulse duration is less than or equal to 1 μs, then Q is the total accelerated charge in Coulombs. If the accelerator beam pulse duration is greater than 1 μs, then Q is the maximum accelerated charge in 1 μs. Q equals the integral of i with respect to t, over the lesser of 1 μs or the time duration of the beam pulse (Q = ∫ idt), where i is beam current in amperes and t is time in seconds. Peak power = (peak potential in volts) × (peak beam current in amperes). In machines based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of 1 μs or the duration of the bunched beam packet resulting from one microwave modulator pulse. In machines based on microwave accelerating cavities, the peak beam current is the average current in the time duration of a bunched beam packet.

c.

1. a.

An accelerator peak electron energy of 500 keV or greater but less than 25 MeV; and

b.

With a figure of merit (K) of 0,25 or greater; or

2. a.

An accelerator peak electron energy of 25 MeV or greater; and

b.

A peak power greater than 50 MW.

a.

Multiphase output capable of providing a power of 40 W or greater;

b.

Capable of operating in the frequency range between 600 and 2000 Hz;

c.

Total harmonic distortion better (less) than 10 %; and

d.

Frequency control better (less) than 0,1 %.

3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: a.

Capable of continuously producing, over a time period of 8 hours, 100 V or greater with current output of 500 A or greater; and

b.

Current or voltage stability better than 0,1 % over a time period of 8 hours.

a.

Capable of continuously producing, over a time period of 8 hours, 20 kV or greater with current output of 1 A or greater; and

b.

Current or voltage stability better than 0,1 % over a time period of 8 hours.

a.Note:

Cold-cathode tubes, whether gas filled or not, operating similarly to a spark gap, having all of the following characteristics: 3A228 includes gas krytron tubes and vacuum sprytron tubes.

a.

1. Containing three or more electrodes;

2. Anode peak voltage rating of 2,5 kV or more;

3. Anode peak current rating of 100 A or more; and

4. Anode delay time of 10 μs or less;

b.

Triggered spark-gaps having both of the following characteristics:

1. An anode delay time of 15 μs or less; and

2. Rated for a peak current of 500 A or more;

c.

Modules or assemblies with a fast switching function, other than those specified in 3A001.g. or 3A001.h., having all of the following characteristics:

1. Anode peak voltage rating greater than 2 kV;

2. Anode peak current rating of 500 A or more; and

3. Turn-on time of 1 μs or less.

3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB: a.

Not used;

b.

Modular electrical pulse generators (pulsers) having all of the following characteristics:

1. Designed for portable, mobile, or ruggedised-use;

2. Enclosed in a dust-tight enclosure;

3. Capable of delivering their energy in less than 15 μs;

4. Having an output greater than 100 A;

5. Having a rise time of less than 10 μs into loads of less than 40 ohms;

6. No dimension greater than 254 mm;

7. Weight less than 25 kg; and

8. Specified for use over an extended temperature range 223 K (– 50 °C) to 373 K (100 °C) or specified as suitable for aerospace applications.

3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: a.

Output voltage greater than 6 V into a resistive load of less than 55 ohms; and

b.

Pulse transition time less than 500 ps.

3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: Technical Note: a.

Designed for operation without an external vacuum system; and

b.

Utilising electrostatic acceleration to induce a tritium-deuterium nuclear reaction.

3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:NB: a.

Not used;

b.

Arrangements using single or multiple detonators designed to nearly simultaneously initiate an explosive surface over greater than 5000 mm2 from a single firing signal with an initiation timing spread over the surface of less than 2,5 μs.

3ASystems, Equipment and Components Note 1:Note 2:NB:Note: Technical Notes: 1.2. Technical Note: NB:NB:Note: Technical Note: Technical Note: NB:NB:Note: a.

Inductively coupled plasma mass spectrometers (ICP/MS);

b.

Glow discharge mass spectrometers (GDMS);

c.

Thermal ionisation mass spectrometers (TIMS);

d.

Electron bombardment mass spectrometers which have a source chamber constructed from, lined with or plated with materials resistant to UF6;

e.

Molecular beam mass spectrometers having either of the following characteristics:

1. A source chamber constructed from, lined with or plated with stainless steel or molybdenum and equipped with a cold trap capable of cooling to 193 K (– 80 °C) or less; or

2. A source chamber constructed from, lined with or plated with materials resistant to UF6;

f.

Mass spectrometers equipped with a microfluorination ion source designed for actinides or actinide fluorides.

3BTest, Inspection and Production Equipment

3B001Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor: 3B002Test equipment specially designed for testing finished or unfinished semiconductor devices as follows and specially designed components and accessories therefor:

a.

Equipment designed for epitaxial growth as follows:

1.Note: Equipment capable of producing a layer of any material other than silicon with a thickness uniform to less than ± 2,5 % across a distance of 75 mm or more; 3B001.a.1. includes Atomic Layer Epitaxy (ALE) equipment.

2. Metal Organic Chemical Vapour Deposition (MOCVD) reactors specially designed for compound semiconductor crystal growth by the chemical reaction between materials specified in 3C003 or 3C004;

3. Molecular beam epitaxial growth equipment using gas or solid sources;

b.

Equipment designed for ion implantation and having any of the following:

1. A beam energy (accelerating voltage) exceeding 1MeV;

2. Being specially designed and optimised to operate at a beam energy (accelerating voltage) of less than 2 keV;

3. Direct write capability; or

4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material substrate;

c.

Anisotropic plasma dry etching equipment having both of the following:

1. Designed or optimised to produce critical dimensions of 65 nm or less; and

2. Within-wafer non-uniformity equal to or less than 10 % 3σ measured with an edge exclusion of 2 mm or less;

d.

Plasma enhanced Chemical Vapour Deposition (CVD) equipment as follows:

1. Equipment with cassette-to-cassette operation and load-locks, and designed according to the manufacturer’s specifications or optimised for use in the production of semiconductor devices with critical dimensions of 65 nm or less;

2. Equipment specially designed for equipment specified in 3B001.e. and designed according to the manufacturer’s specifications or optimised for use in the production of semiconductor devices with critical dimensions of 65 nm or less;

e.Note: Technical Notes: 1.2.

Automatic loading multi-chamber central wafer handling systems having both of the following: 3B001.e. does not control automatic robotic wafer handling systems specially designed for parallel wafer processing. For the purpose of 3B001.e., semiconductor process tools refers to modular tools that provide physical processes for semiconductor production that are functionally different, such as deposition, etch, implant or thermal processing. For the purpose of 3B001.e., sequential multiple wafer processing means the capability to process each wafer in different semiconductor process tools, such as by transferring each wafer from one tool to a second tool and on to a third tool with the automatic loading multi-chamber central wafer handling systems.

e.

1. Interfaces for wafer input and output, to which more than two functionally different semiconductor process tools specified in 3B001.a., 3B001.b., 3B001.c. or 3B001.d. are designed to be connected; and

2. Designed to form an integrated system in a vacuum environment for sequential multiple wafer processing;

f.

Lithography equipment as follows:

1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having either of the following:

1. a.

A light source wavelength shorter than 245 nm; or

b. Technical Note:

Capable of producing a pattern with a Minimum Resolvable Feature size (MRF) of 95 nm or less; The Minimum Resolvable Feature size (MRF) is calculated by the following formula: MRF =an exposure light source wavelength in nm × K factornumerical aperture where the K factor = 0,35

2.Note: Imprint lithography equipment capable of producing features of 95 nm or less; 3B001.f.2. includes:

Micro contact printing tools

Hot embossing tools

Nano-imprint lithography tools

Step and flash imprint lithography (S-FIL) tools

3. Equipment specially designed for mask making or semiconductor device processing using direct writing methods, having all of the following:

3. a.

Using deflected focussed electron beam, ion beam or laser beam; and

b.

Having any of the following:

1. A spot size smaller than 0,2 μm;

2. Being capable of producing a pattern with a feature size of less than 1 μm; or

3. An overlay accuracy of better than ± 0,20 μm (3 sigma);

g.

Masks and reticles, designed for integrated circuits specified in 3A001;

h.Note:

Multi-layer masks with a phase shift layer; 3B001.h. does not control multi-layer masks with a phase shift layer designed for the fabrication of memory devices not controlled by 3A001.

i.

Imprint lithography templates designed for integrated circuits specified in 3A001.

a.

For testing S-parameters of transistor devices at frequencies exceeding 31,8 GHz;

b.

Not used;

c.

For testing microwave integrated circuits specified in 3A001.b.2.

3CMaterials Note:Note:

3C001Hetero-epitaxial materials consisting of a substrate having stacked epitaxially grown multiple layers of any of the following: 3C002Resist materials as follows and substrates coated with the following resists: 3C003Organo-inorganic compounds as follows: 3C003 only controls compounds whose metallic, partly metallic or non-metallic element is directly linked to carbon in the organic part of the molecule. 3C004Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. 3C004 does not control hydrides containing 20 % molar or more of inert gases or hydrogen. 3C005Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) substrates, or ingots, boules, or other preforms of those materials, having resistivities greater than 10000 ohm-cm at 20 °C. 3C006Substrates specified in 3C005 with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.

3CMaterials a.

Silicon (Si);

b.

Germanium (Ge);

c.

Silicon carbide (SiC); or

d.

III/V compounds of gallium or indium.

a.

Positive resists designed for semiconductor lithography specially adjusted (optimised) for use at wavelengths below 245 nm;

b.

All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;

c.

All resists designed for use with X-rays, with a sensitivity of 2,5 mJ/mm2 or better;

d. Technical Note:

All resists optimised for surface imaging technologies, including silylated resists; Silylation techniques are defined as processes incorporating oxidation of the resist surface to enhance performance for both wet and dry developing.

e.

All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.

a.

Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %;

b.

Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.

3DSoftware Technical Note: Note:

3D001Software specially designed for the development or production of equipment specified in 3A001.b. to 3A002.g. or 3B. 3D002Software specially designed for the use of equipment specified in 3B001.a. to f. or 3B002. 3D003Physics-based simulation software specially designed for the development of lithographic, etching or deposition processes for translating masking patterns into specific topographical patterns in conductors, dielectrics or semiconductor materials. Physics-based in 3D003 means using computations to determine a sequence of physical cause and effect events based on physical properties (e.g. temperature, pressure, diffusion constants and semiconductor materials properties). Libraries, design attributes or associated data for the design of semiconductor devices or integrated circuits are considered as technology. 3D004Software specially designed for the development of the equipment specified in 3A003. 3D101Software specially designed or modified for the use of equipment specified in 3A101.b.

3ETechnology Note 1:Note 2:Note 1:Note 2:

3E001Technology according to the General Technology Note for the development or production of equipment or materials specified in 3A, 3B or 3C; 3E001 does not control technology for the production of equipment or components controlled by 3A003. 3E001 does not control technology for the development or production of integrated circuits specified in 3A001.a.3. to 3A001.a.12., having all of the following: 3E002Technology according to the General Technology Note, other than that specified in 3E001, for the development or production of a microprocessor microcircuit, microcomputer microcircuit or microcontroller microcircuit core, having an arithmetic logic unit with an access width of 32 bits or more and any of the following features or characteristics: 3E002 does not control technology for the development or production of micro-processor cores, having all of the following: 3E002 includes technology for digital signal processors and digital array processors. 3E003Other technology for the development or production of the following: 3E101Technology according to the General Technology Note for the use of equipment or software specified in 3A001.a.1. or 2., 3A101, 3A102 or 3D101. 3E102Technology according to the General Technology Note for the development of software specified in 3D101. 3E201Technology according to the General Technology Note for the use of equipment specified in 3A001.e.2., 3A001.e.3., 3A001.g., 3A201, 3A225 to 3A233.

3ETechnology Note 1:Note 2: a.

Using technology at or above 0,130 μm; and

b.

Incorporating multi-layer structures with three or fewer metal layers.

a. Technical Note:

A vector processor unit designed to perform more than two calculations on floating-point vectors (one-dimensional arrays of 32-bit or larger numbers) simultaneously; A vector processor unit is a processor element with built-in instructions that perform multiple calculations on floating-point vectors (one-dimensional arrays of 32-bit or larger numbers) simultaneously, having at least one vector arithmetic logic unit.

b.

Designed to perform more than two 64-bit or larger floating-point operation results per cycle; or

c.Note:

Designed to perform more than four 16-bit fixed-point multiply-accumulate results per cycle (e.g. digital manipulation of analogue information that has been previously converted into digital form, also known as digital signal processing). 3E002.c. does not control technology for multimedia extensions.

3ETechnology Note 1:Note 2:Note 1: a.

Using technology at or above 0,130 μm; and

b.

Incorporating multi-layer structures with five or fewer metal layers.

3ETechnology Note 1:Note 2:Note 1:Note 2: a.

Vacuum microelectronic devices;

b.Note:

Hetero-structure semiconductor devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices; 3E003.b. does not control technology for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.

c.

Superconductive electronic devices;

d.

Substrates of films of diamond for electronic components.

e.

Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;

f.

Substrates of silicon carbide for electronic components;

g.

Electronic vacuum tubes operating at frequencies of 31,8 GHz or higher.

CATEGORY 4 Note 1:Note 2:NB:Note 3: COMPUTERS

Computers, related equipment and software performing telecommunications or local area network functions must also be evaluated against the performance characteristics of Category 5, Part 1 (Telecommunications). Control units which directly interconnect the buses or channels of central processing units, main storage or disk controllers are not regarded as telecommunications equipment described in Category 5, Part 1 (Telecommunications). For the control status of software specially designed for packet switching, see 5D001. Computers, related equipment and software performing cryptographic, cryptanalytic, certifiable multi-level security or certifiable user isolation functions, or which limit electromagnetic compatibility (EMC), must also be evaluated against the performance characteristics in Category 5, Part 2 (Information Security).

4ASystems, Equipment and Components NB:Note 1:Note 2:Note:

4A001Electronic computers and related equipment, having any of the following and electronic assemblies and specially designed components therefor: SEE ALSO 4A101. 4A003Digital computers, electronic assemblies, and related equipment therefor, as follows and specially designed components therefor: 4A003 includes the following: The control status of the digital computers and related equipment described in 4A003 is determined by the control status of other equipment or systems provided: 4A004Computers as follows and specially designed related equipment, electronic assemblies and components therefor: 4A101Analogue computers, digital computers or digital differential analysers, other than those specified in 4A001.a.1., which are ruggedised and designed or modified for use in space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. 4A102Hybrid computers specially designed for modelling, simulation or design integration of space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. This control only applies when the equipment is supplied with software specified in 7D103 or 9D103.

4ASystems, Equipment and Components NB: a.

Specially designed to have any of the following:

1.Note: Rated for operation at an ambient temperature below 228 K (– 45 °C) or above 358 K (85 °C); or 4A001.a.1. does not control computers specially designed for civil automobile, railway train or civil aircraft applications.

2.Note: Radiation hardened to exceed any of the following specifications: a. Total Dose 5 × 103 Gy (silicon); b. Dose Rate Upset 5 × 106 Gy (silicon)/s; or c. Single Event Upset 1 × 10–8 Error/bit/day; 4A001.a.2. does not control computers specially designed for civil aircraft applications.

b.

Not used.

Vector processors;

Array processors;

Digital signal processors;

Logic processors;

Equipment designed for image enhancement;

Equipment designed for signal processing.

4ASystems, Equipment and Components NB:Note 1:Note 2: a.

The digital computers or related equipment are essential for the operation of the other equipment or systems;

b.NB 1:NB 2: The digital computers or related equipment are not a principal element of the other equipment or systems; and The control status of signal processing or image enhancement equipment specially designed for other equipment with functions limited to those required for the other equipment is determined by the control status of the other equipment even if it exceeds the principal element criterion. For the control status of digital computers or related equipment for telecommunications equipment, see Category 5, Part 1 (Telecommunications).

c.

The technology for the digital computers and related equipment is determined by 4E.

a.Note:

Designed or modified for fault tolerance; For the purposes of 4A003.a., digital computers and related equipment are not considered to be designed or modified for fault tolerance if they utilise any of the following:

1. Error detection or correction algorithms in main storage;

2. The interconnection of two digital computers so that, if the active central processing unit fails, an idling but mirroring central processing unit can continue the system's functioning;

3. The interconnection of two central processing units by data channels or by using shared storage to permit one central processing unit to perform other work until the second central processing unit fails, at which time the first central processing unit takes over in order to continue the system's functioning; or

4. The synchronisation of two central processing units by software so that one central processing unit recognises when the other central processing unit fails and recovers tasks from the failing unit.

b.

Digital computers having an Adjusted Peak Performance (APP) exceeding 1,5 Weighted TeraFLOPS (WT);

c.Note 1:Note 2:

Electronic assemblies specially designed or modified for enhancing performance by aggregation of processors so that the APP of the aggregation exceeds the limit specified in 4A003.b.; 4A003.c. controls only electronic assemblies and programmable interconnections not exceeding the limit specified in 4A003.b. when shipped as unintegrated electronic assemblies. It does not control electronic assemblies inherently limited by nature of their design for use as related equipment specified in 4A003.e. 4A003.c. does not control electronic assemblies specially designed for a product or family of products whose maximum configuration does not exceed the limit specified in 4A003.b.

d.

Not used;

e.

Equipment performing analogue-to-digital conversions exceeding the limits specified in 3A001.a.5.;

f.

Not used;

g.Note:

Equipment specially designed for aggregating the performance of digital computers by providing external interconnections which allows communications at unidirectional data rates exceeding 2,0 Gbyte/s per link. 4A003.g. does not control internal interconnection equipment (e.g. backplanes, buses), passive interconnection equipment, network access controllers or communications channel controllers.

a.

Systolic array computers;

b.

Neural computers;

c.

Optical computers.

4BTest, Inspection and Production Equipment

None.

4CMaterials None.

4DSoftware Note:

The control status of software for the development, production, or use of equipment described in other Categories is dealt with in the appropriate Category. 4D001Software as follows: 4D002Software specially designed or modified to support technology specified in 4E. 4D003Not used.

a.

Software specially designed or modified for the development, production or use of equipment or software specified in 4A001 to 4A004, or 4D.

b.

Software, other than that specified in 4D001.a., specially designed or modified for the development or production of equipment as follows:

1. Digital computers having an Adjusted Peak Performance (APP) exceeding 0,25 Weighted TeraFLOPS (WT);

2. Electronic assemblies specially designed or modified for enhancing performance by aggregation of processors so that the APP of the aggregation exceeds the limit in 4D001.b.1.;

4ETechnology 4E001

4ETechnology a.

Technology according to the General Technology Note, for the development production or use of equipment or software specified in 4A or 4D.

b.

Technology, other than that specified in 4E001.a., specially designed or modified for the development or production of equipment as follows:

1. Digital computers having an Adjusted Peak Performance (APP) exceeding 0,25 Weighted TeraFLOPS (WT);

2. Electronic assemblies specially designed or modified for enhancing performance by aggregation of processors so that the APP of the aggregation exceeds the limit in 4E001.b.1.

TECHNICAL NOTE ON ADJUSTED PEAK PERFORMANCE (APP)

APP is an adjusted peak rate at which digital computers perform 64-bit or larger floating point additions and multiplications. APP is expressed in Weighted TeraFLOPS (WT), in units of 1012 adjusted floating point operations per second.

Abbreviations used in this Technical Note

n number of processors in the digital computer i processor number (i = 1,…,n) ti processor cycle time (ti = 1/Fi) Fi processor frequency Ri peak floating point calculating rate Wi architecture adjustment factor

Outline of APP calculation method 1.Note2.3.4.Note 1Note 2Note 3Note 4Note 5Note 6Note 7

For each processor i, determine the peak number of 64-bit or larger floating point operations, FPOi, performed per cycle for each processor in the digital computer. In determining FPO, include only 64-bit or larger floating point additions and/or multiplications. All floating point operations must be expressed in operations per processor cycle; operations requiring multiple cycles may be expressed in fractional results per cycle. For processors not capable of performing calculations on floating point operands of 64-bit or more, the effective calculating rate R is zero. Calculate the floating point rate R for each processor Ri = FPOi/ti. Calculate APP as APP = W1 × R1 + W2 × R2 + … + Wn × Rn. For vector processors, Wi = 0,9. For non-vector processors, Wi = 0,3. For processors that perform compound operations in a cycle, such as addition and multiplication, each operation is counted. For a pipelined processor the effective calculating rate R is the faster of the pipelined rate, once the pipeline is full, or the non-pipelined rate. The calculating rate R of each contributing processor is to be calculated at its maximum value theoretically possible before the APP of the combination is derived. Simultaneous operations are assumed to exist when the computer manufacturer claims concurrent, parallel, or simultaneous operation or execution in a manual or brochure for the computer. Do not include processors that are limited to input/output and peripheral functions (e.g. disk drive, communication and video display) when calculating APP. APP values are not to be calculated for processor combinations (inter)connected by Local Area Networks, Wide Area Networks, I/O shared connections/devices, I/O controllers and any communication interconnection implemented by software. APP values must be calculated for: A vector processor is defined as a processor with built-in instructions that perform multiple calculations on floating-point vectors (one-dimensional arrays of 64-bit or larger numbers) simultaneously, having at least 2 vector functional units and at least 8 vector registers of at least 64 elements each.

Outline of APP calculation method 1.Note2.3.4.Note 1Note 2Note 3Note 4Note 5Note 6

1. Processor combinations containing processors specially designed to enhance performance by aggregation, operating simultaneously and sharing memory; or

2. Multiple memory/processor combinations operating simultaneously utilising specially designed hardware.

CATEGORY 5 TELECOMMUNICATIONS AND INFORMATION SECURITY

PART 1 Note 1:NB 1:NB 2:Note 2: TELECOMMUNICATIONS

The control status of components, lasers, test and production equipment and software therefor which are specially designed for telecommunications equipment or systems is determined in Category 5, Part 1. For lasers specially designed for telecommunications equipment or systems, see 6A005. See also Category 5, Part 2 for equipment, components, and software performing or incorporating information security functions. Digital computers, related equipment or software, when essential for the operation and support of telecommunications equipment described in this Category, are regarded as specially designed components, provided they are the standard models customarily supplied by the manufacturer. This includes operation, administration, maintenance, engineering or billing computer systems.

5A1Systems, Equipment and Components Technical Note: Note:

5A001Telecommunications systems, equipment, components and accessories as follows: 5A101Telemetry and telecontrol equipment, including ground equipment, designed or modified for missiles. In 5A101 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 5A101 does not control:

5A1Systems, Equipment and Components a.Note:

Any type of telecommunications equipment having any of the following characteristics, functions or features: 5A001.a.2. and 5A001.a.3. do not control equipment designed or modified for use on board satellites.

a.

1. Specially designed to withstand transitory electronic effects or electromagnetic pulse effects, both arising from a nuclear explosion;

2. Specially hardened to withstand gamma, neutron or ion radiation; or

3.Note: Specially designed to operate outside the temperature range from 218 K (– 55 °C) to 397 K (124 °C); 5A001.a.3. applies only to electronic equipment.

b.

Telecommunication systems and equipment, and specially designed components and accessories therefor, having any of the following characteristics, functions or features:

1. Being underwater untethered communications systems having any of the following:

1. a.

An acoustic carrier frequency outside the range from 20 kHz to 60 kHz;

b.

Using an electromagnetic carrier frequency below 30 kHz;

c.

Using electronic beam steering techniques; or

d.

Using lasers or light-emitting diodes (LEDs) with an output wavelength greater than 400 nm and less than 700 nm, in a local area network;

2. Being radio equipment operating in the 1,5 MHz to 87,5 MHz band and having all of the following:

2. a.

Automatically predicting and selecting frequencies and total digital transfer rates per channel to optimise the transmission; and

b.

Incorporating a linear power amplifier configuration having a capability to support multiple signals simultaneously at an output power of 1 kW or more in the frequency range of 1,5 MHz or more but less than 30 MHz, or 250 W or more in the frequency range of 30 MHz or more but not exceeding 87,5 MHz, over an instantaneous bandwidth of one octave or more and with an output harmonic and distortion content of better than -80 dB;

3.Note: Being radio equipment employing spread spectrum techniques, including frequency hopping techniques, other than those specified in 5A001.b.4. and having any of the following: 5A001.b.3 does not control equipment designed to operate at an output power of 1 W or less.

3. a.

User programmable spreading codes; or

b.Note:

A total transmitted bandwidth which is 100 or more times the bandwidth of any one information channel and in excess of 50 kHz; 5A001.b.3.b. does not control radio equipment specially designed for use with civil cellular radio-communications systems.

4. Being radio equipment employing ultra-wideband modulation techniques, having user programmable channelising codes, scrambling codes or network identification codes and having any of the following:

4. a.

A bandwidth exceeding 500 MHz; or

b.

A fractional bandwidth of 20 % or more;

5. Being digitally controlled radio receivers having all of the following:

5. a.

More than 1000 channels;

b.

A frequency switching time of less than 1 ms;

c.

Automatic searching or scanning of a part of the electromagnetic spectrum; and

d.Note:

Identification of the received signals or the type of transmitter; or 5A001.b.5. does not control radio equipment specially designed for use with civil cellular radio-communications systems.

6. Technical Notes: 1.2.

Employing functions of digital signal processing to provide voice coding output at rates of less than 2400 bit/s. For variable rate voice coding, 5A001.b.6. applies to the voice coding output of continuous speech. For the purposes of 5A001.b.6., voice coding is defined as the technique to take samples of human voice and then convert these samples into a digital signal, taking into account specific characteristics of human speech.

c.NB: Technical Note:

Optical fibres of more than 500 m in length and specified by the manufacturer as being capable of withstanding a proof test tensile stress of 2 × 109 N/m2 or more; For underwater umbilical cables, see 8A002.a.3. Proof Test: on-line or off-line production screen testing that dynamically applies a prescribed tensile stress over a 0,5 to 3 m length of fibre at a running rate of 2 to 5 m/s while passing between capstans approximately 50 mm in diameter. The ambient temperature is a nominal 293 K (20 °C) and relative humidity 40 %. Equivalent national standards may be used for executing the proof test.

d.Note:

Electronically steerable phased array antennae operating above 31,8 GHz; 5A001.d. does not control electronically steerable phased array antennae for landing systems with instruments meeting ICAO standards covering Microwave Landing Systems (MLS).

e.

Radio direction finding equipment operating at frequencies above 30 MHz and having both of the following, and specially designed components therefor:

1. Instantaneous bandwidth of 10 MHz or more; and

2. Capable of finding a Line Of Bearing (LOB) to non-cooperating radio transmitters with a signal duration of less than 1 ms;

f.

Jamming equipment specially designed or modified to intentionally and selectively interfere with, deny, inhibit, degrade or seduce mobile telecommunications services and perform any of the following, and specially designed components therefor:

1. Simulate the functions of Radio Access Network (RAN) equipment;

2. Detect and exploit specific characteristics of the mobile telecommunications protocol employed (e.g. GSM); or

3.NB: Exploit specific characteristics of the mobile telecommunications protocol employed (e.g. GSM); For GNSS jamming equipment see Military Goods Controls.

g. Technical Note: Note:

Passive Coherent Location (PCL) systems or equipment, specially designed for detecting and tracking moving objects by measuring reflections of ambient radio frequency emissions, supplied by non-radar transmitters; Non-radar transmitters may include commercial radio, television or cellular telecommunications base stations. 5A001.g. does not control any of the following:

a.

Radio-astronomical equipment; or

b.

Systems or equipment, that require any radio transmission from the target.

h.NB:

Radio Frequency (RF) transmitting equipment designed or modified for prematurely activating or preventing the initiation of Improvised Explosive Devices (IEDs). SEE ALSO 5A001.f. AND MILITARY GOODS CONTROLS.

5A1Systems, Equipment and Components Technical Note: Note: a.

Equipment designed or modified for manned aircraft or satellites;

b.

Ground based equipment designed or modified for terrestrial or marine applications;

c.

Equipment designed for commercial, civil or Safety of Life (e.g. data integrity, flight safety) GNSS services;

5B1Test, Inspection and Production Equipment

5B001Telecommunications test, inspection and production equipment, components and accessories, as follows:

a.Note:

Equipment and specially designed components or accessories therefor, specially designed for the development, production or use of equipment, functions or features, specified in 5A001; 5B001.a. does not control optical fibre characterisation equipment.

b.

Equipment and specially designed components or accessories therefor, specially designed for the development of any of the following telecommunication transmission or switching equipment:

1. Not used;

2. Equipment employing a laser and having any of the following:

2. a.

A transmission wavelength exceeding 1750 nm;

b.

Performing optical amplification using praseodymium-doped fluoride fibre amplifiers (PDFFA);

c.

Employing coherent optical transmission or coherent optical detection techniques (also called optical heterodyne or homodyne techniques); or

d.Note:

Employing analogue techniques and having a bandwidth exceeding 2,5 GHz; 5B001.b.2.d. does not control equipment specially designed for the development of commercial TV systems.

3. Not used;

4. Radio equipment employing Quadrature-Amplitude-Modulation (QAM) techniques above level 256; or

5. Equipment employing common channel signalling operating in non-associated mode of operation.

5C1Materials None

5D1Software 5D001Software as follows: 5D101Software specially designed or modified for the use of equipment specified in 5A101.

5D1Software a.

Software specially designed or modified for the development, production or use of equipment, functions or features, specified in 5A001;

b.

Software specially designed or modified to support technology specified in 5E001;

c.

Specific software specially designed or modified to provide characteristics, functions or features of equipment, specified in 5A001 or 5B001;

d.

Software specially designed or modified for the development of any of the following telecommunication transmission or switching equipment:

1. Not used;

2. Equipment employing a laser and having either of the following:

2. a.

A transmission wavelength exceeding 1750 nm; or

b.Note:

Employing analogue techniques and having a bandwidth exceeding 2,5 GHz; or 5D001.d.2.b. does not control software specially designed or modified for the development of commercial TV systems.

3. Not used;

4. Radio equipment employing Quadrature-Amplitude-Modulation (QAM) techniques above level 256.

5E1Technology

5E001Technology as follows: 5E101Technology according to the General Technology Note for the development, production or use of equipment specified in 5A101.

a.

Technology according to the General Technology Note for the development, production or use (excluding operation) of equipment, functions or features specified in 5A001 or software specified in 5D001.a.;

b.

Specific technology as follows:

1. Required technology for the development or production of telecommunications equipment specially designed to be used on board satellites;

2. Technology for the development or use of laser communication techniques with the capability of automatically acquiring and tracking signals and maintaining communications through exoatmosphere or sub-surface (water) media;

3. Technology for the development of digital cellular radio base station receiving equipment whose reception capabilities that allow multi-band, multi-channel, multi-mode, multi-coding algorithm or multi-protocol operation can be modified by changes in software;

4.Note: Technology for the development of spread spectrum techniques, including frequency hopping techniques; 5E001.b.4. does not control technology for the development of civil cellular radio-communications systems.

c.

Technology according to the General Technology Note for the development or production of any of the following:

1. Technical Note:

Equipment employing digital techniques designed to operate at a total digital transfer rate exceeding 50 Gbit/s; For telecommunication switching equipment the total digital transfer rate is the unidirectional speed of a single interface, measured at the highest speed port or line.

2. Equipment employing a laser and having any of the following:

2. a.

A transmission wavelength exceeding 1750 nm;

b.

Performing optical amplification using Praseodymium-Doped Fluoride Fibre Amplifiers (PDFFA);

c.

Employing coherent optical transmission or coherent optical detection techniques (also called optical heterodyne or homodyne techniques);

d.

Employing wavelength division multiplexing techniques of optical carriers at less than 100 GHz spacing; or

e.Note:NB:

Employing analogue techniques and having a bandwidth exceeding 2,5 GHz; 5E001.c.2.e. does not control technology for the development or production of commercial TV systems. For technology for the development or production of non-telecommunications equipment employing a laser, see 6E.

3. Equipment employing optical switching and having a switching time less than 1 ms;

4. Radio equipment having any of the following:

4. a.

Quadrature-Amplitude-Modulation (QAM) techniques above level 256;

b.Note:

Operating at input or output frequencies exceeding 31,8 GHz; or 5E001.c.4.b. does not control technology for the development or production of equipment designed or modified for operation in any frequency band which is allocated by the ITU for radio-communications services, but not for radio-determination.

c.

Operating in the 1,5 MHz to 87,5 MHz band and incorporating adaptive techniques providing more than 15 dB suppression of an interfering signal;

5. Equipment employing common channel signalling operating in non-associated mode of operation; or

6. Mobile equipment having all of the following:

6. a.

Operating at an optical wavelength greater than or equal to 200 nm and less than or equal to 400 nm; and

b.

Operating as a local area network;

d.

Technology according to the General Technology Note for the development or production of Microwave Monolithic Integrated Circuit (MMIC) power amplifiers specially designed for telecommunications and having any of the following:

1. Rated for operation at frequencies exceeding 3,2 GHz up to and including 6,8 GHz and with an average output power greater than 4 W (36 dBm) with a fractional bandwidth greater than 15 %;

2. Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz and with an average output power greater than 1 W (30 dBm) with a fractional bandwidth greater than 10 %;

3. Rated for operation at frequencies exceeding 16 GHz up to and including 31,8 GHz and with an average output power greater than 0,8 W (29 dBm) with a fractional bandwidth greater than 10 %;

4. Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz;

5. Rated for operation at frequencies exceeding 37,5 GHz up to and including 43,5 GHz and with an average output power greater than 0,25 W (24 dBm) with a fractional bandwidth greater than 10 %; or

6. Rated for operation at frequencies exceeding 43,5 GHz;

e.

Technology according to the General Technology Note for the development or production of electronic devices and circuits, specially designed for telecommunications and containing components manufactured from superconductive materials, specially designed for operation at temperatures below the critical temperature of at least one of the superconductive constituents and having either of the following:

1. Current switching for digital circuits using superconductive gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10–14 J; or

2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10000.

PART 2 Note 1:Note 2:Note 3:Note 4: Technical Note: INFORMATION SECURITY

The control status of information security equipment, software, systems, application specific electronic assemblies, modules, integrated circuits, components or functions is determined in Category 5, Part 2 even if they are components or electronic assemblies of other equipment. Category 5 — Part 2 does not control products when accompanying their user for the user’s personal use. Cryptography Note 5A002 and 5D002 do not control goods that meet all of the following: Category 5 — Part 2 does not control items incorporating or using cryptography and meeting all of the following: In Category 5 — Part 2, parity bits are not included in the key length.

Note 1:Note 2:Note 3: INFORMATION SECURITY

a.

Generally available to the public by being sold, without restriction, from stock at retail selling points by means of any of the following:

1. Over-the-counter transactions;

2. Mail order transactions;

3. Electronic transactions; or

4. Telephone call transactions;

b.

The cryptographic functionality cannot easily be changed by the user;

c.

Designed for installation by the user without further substantial support by the supplier; and

d.

When necessary, details of the goods are accessible and will be provided, upon request, to the competent authorities of the Member State in which the exporter is established in order to ascertain compliance with conditions described in paragraphs a. to c. above.

Note 1:Note 2:Note 3:Note 4: INFORMATION SECURITY

a.

The primary function or set of functions is not any of the following:

1. Information security;

2. A computer, including operating systems, parts and components therefor;

3. Sending, receiving or storing information (except in support of entertainment, mass commercial broadcasts, digital rights management or medical records management); or

4. Networking (includes operation, administration, management and provisioning);

b.

The cryptographic functionality is limited to supporting their primary function or set of functions; and

c.

When necessary, details of the items are accessible and will be provided, upon request, to the appropriate authority in the exporter’s country in order to ascertain compliance with conditions described in paragraphs a. and b. above.

Note 1:Note 2:Note 3:Note 4: Technical Note: INFORMATION SECURITY

5A2Systems, Equipment and Components

5A002Information security systems, equipment and components therefor, as follows:

a.NB:

Systems, equipment, application specific electronic assemblies, modules and integrated circuits for information security, as follows, and components therefor specially designed for information security: For the control of Global Navigation Satellite Systems (GNSS) receiving equipment containing or employing decryption, see 7A005.

1. Technical Notes: 1.2.3.Note:

Designed or modified to use cryptography employing digital techniques performing any cryptographic function other than authentication or digital signature and having any of the following: Authentication and digital signature functions include their associated key management function. Authentication includes all aspects of access control where there is no encryption of files or text except as directly related to the protection of passwords, Personal Identification Numbers (PINs) or similar data to prevent unauthorised access. Cryptography does not include fixed data compression or coding techniques. 5A002.a.1. includes equipment designed or modified to use cryptography employing analogue principles when implemented with digital techniques.

a.

A symmetric algorithm employing a key length in excess of 56 bits; or

b.

An asymmetric algorithm where the security of the algorithm is based on any of the following:

1. Factorisation of integers in excess of 512 bits (e.g. RSA);

2. Computation of discrete logarithms in a multiplicative group of a finite field of size greater than 512 bits (e.g. Diffie-Hellman over Z/pZ); or

3. Discrete logarithms in a group other than mentioned in 5A002.a.1.b.2. in excess of 112 bits (e.g. Diffie-Hellman over an elliptic curve);

2. Designed or modified to perform cryptanalytic functions;

3. Not used;

4. Specially designed or modified to reduce the compromising emanations of information-bearing signals beyond what is necessary for health, safety or electromagnetic interference standards;

5. Designed or modified to use cryptographic techniques to generate the spreading code for spread spectrum systems, other than those specified in 5A002.a.6., including the hopping code for frequency hopping systems;

6. Designed or modified to use cryptographic techniques to generate channelising codes, scrambling codes or network identification codes, for systems using ultra-wideband modulation techniques and having either of the following:

6. a.

A bandwidth exceeding 500 MHz; or

b.

A fractional bandwidth of 20 % or more;

7. Non-cryptographic information and communications technology (ICT) security systems and devices evaluated to an assurance level exceeding class EAL-6 (evaluation assurance level) of the Common Criteria (CC) or equivalent;

8. Communications cable systems designed or modified using mechanical, electrical or electronic means to detect surreptitious intrusion;

9. Technical Note:

Designed or modified to use quantum cryptography. Quantum cryptography is also known as Quantum Key Distribution (QKD).

b.Note:

Systems, equipment, application specific electronic assemblies, modules and integrated circuits, designed or modified to enable an item to achieve or exceed the controlled performance levels for functionality specified by 5A002.a. that would not otherwise be enabled. 5A002 does not control any of the following:

a.

Smart cards and smart card readers/writers as follows:

1. A smart card or an electronically readable personal document (e.g. token coin, e-passport) that meets either of the following:

1. a.

The cryptographic capability is restricted for use in equipment or systems excluded from 5A002 by Note 4 in Category 5 — Part 2 or entries b. to i. of this Note, and cannot be reprogrammed for any other use; or

b.

Having all of the following:

1. It is specially designed and limited to allow protection of personal data stored within;

2. Has been, or can only be, personalised for public or commercial transactions or individual identification; and

3. Technical Note:

Where the cryptographic capability is not user-accessible; Personal data includes any data specific to a particular person or entity, such as the amount of money stored and data necessary for authentication.

2. Technical Note:

Readers/writers specially designed or modified, and limited, for items specified by a.1. of this Note. Readers/writers include equipment that communicates with smart cards or electronically readable documents through a network.

b.

Not used;

c.

Not used;

d. Technical Note:

Cryptographic equipment specially designed and limited for banking use or money transactions; Money transactions in 5A002 Note d. includes the collection and settlement of fares or credit functions.

e.

Portable or mobile radiotelephones for civil use (e.g. for use with commercial civil cellular radio communication systems) that are not capable of transmitting encrypted data directly to another radiotelephone or equipment (other than Radio Access Network (RAN) equipment), nor of passing encrypted data through RAN equipment (e.g. Radio Network Controller (RNC) or Base Station Controller (BSC));

f.

Cordless telephone equipment not capable of end-to-end encryption where the maximum effective range of unboosted cordless operation (i.e. a single, unrelayed hop between terminal and home base station) is less than 400 metres according to the manufacturer’s specifications;

g.

Portable or mobile radiotelephones and similar client wireless devices for civil use, that implement only published or commercial cryptographic standards (except for anti-piracy functions, which may be non-published) and also meet the provisions of paragraphs b. to d. of the Cryptography Note (Note 3 in Category 5 — Part 2), that have been customised for a specific civil industry application with features that do not affect the cryptographic functionality of these original non-customised devices;

h.

Not used;

i.

Wireless personal area network equipment that implement only published or commercial cryptographic standards and where the cryptographic capability is limited to a nominal operating range not exceeding 30 metres according to the manufacturer’s specifications; or

j.

Equipment, having no functionality specified by 5A002.a.2., 5A002.a.4., 5A002.a.7., or 5A002.a.8., where all cryptographic capability specified by 5A002.a. meets any of the following:

1. It cannot be used; or

2.NB: It can only be made useable by means of cryptographic activation. See 5A002.a. for equipment that has undergone cryptographic activation.

5B2Test, Inspection and Production Equipment

5B002Information security test, inspection and production equipment, as follows:

a.

Equipment specially designed for the development or production of equipment specified in 5A002 or 5B002.b.;

b.

Measuring equipment specially designed to evaluate and validate the information security functions of the equipment specified in 5A002 or software specified in 5D002.a. or 5D002.c.

5C2Materials None.

5D2Software Note:

5D002Software as follows: 5D002 does not control software as follows:

5D2Software a.

Software specially designed or modified for the development, production or use of equipment specified in 5A002 or software specified in 5D002.c.;

b.

Software specially designed or modified to support technology specified in 5E002;

c.

Specific software, as follows:

1. Software having the characteristics, or performing or simulating the functions of the equipment, specified in 5A002;

2. Software to certify software specified in 5D002.c.1.

d.

Software designed or modified to enable an item to achieve or exceed the controlled performance levels for functionality specified by 5A002.a. that would not otherwise be enabled.

5D2Software Note: a.

Software required for the use of equipment excluded from control by the Note to 5A002;

b.

Software providing any of the functions of equipment excluded from control by the Note to 5A002.

5E2Technology

5E002Technology as follows:

a.

Technology according to the General Technology Note for the development, production or use of equipment specified in 5A002, 5B002 or software specified in 5D002.a. or 5D002.c.

b.

Technology to enable an item to achieve or exceed the controlled performance levels for functionality specified by 5A002.a. that would not otherwise be enabled.

CATEGORY 6 SENSORS AND LASERS

6ASystems, Equipment and Components a.

1.Note: a.

Depth sounders operating vertically below the apparatus, not including a scanning function exceeding ± 20 °, and limited to measuring the depth of water, the distance of submerged or buried objects or fish finding;

b.

Acoustic beacons, as follows:

1. Acoustic emergency beacons;

2. Pingers specially designed for relocating or returning to an underwater position.

a.

1. Technical Notes 1.2.

Surface vessel survey equipment designed for seabed topographic mapping and having all of the following: Sounding resolution is the swath width (degrees) divided by the maximum number of soundings per swath. Enhancement includes the ability to compensate by external means.

1. a.

Designed to take measurements at an angle exceeding 20 ° from the vertical;

b.

Designed to measure seabed topography at seabed depths exceeding 600 m;

c.

Sounding resolution less than 2; and

d.

Enhancement of the depth accuracy through compensation for all the following:

1. Motion of the acoustic sensor;

2. In-water propagation from sensor to the seabed and back; and

3. Sound speed at the sensor;

2. Technical Note

Underwater survey equipment designed for seabed topographic mapping and having all of the following: Sounding rate is the product of the maximum speed (m/s) at which the sensor can operate and the maximum number of soundings per swath.

2. a.

Designed or modified to operate at depths exceeding 300 m; and

b.

Sounding rate greater than 3800;

1056 more provisions are not shown here; each has its own address.

Versions

1. 2012-04-19

Cited by

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  Council Regulation (EC) No 428/2009 (OJ L 134, 29.5.2009, p. 1) Regulation (EU) No 1232/2011 of the European Parliament and of the Council (OJ L 326, 8.12.2011, p. 26) Regulation (EU) No 388/2012 of the European Parliament and of the Council (OJ L 129, 16.5.2012, p. 12) Regulation (EU) No 599/2014 of the European Parliament and of the Council (OJ L 173, 12.6.2014, p. 79) Commission Delegated Regulation (EU) No 1382/2014 (OJ L 371, 30.12.2014, p. 1) Commission Delegated Regulation (EU) 2015/2420 (OJ L 340, 24.12.2015, p. 1) Commission Delegated Regulation (EU) 2016/1969 (OJ L 307, 15.11.2016, p

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  This progress report covers activities carried out in the first half of 2012 in the context of the implementation of the WMD Strategy (doc. 15708/03) adopted by the European Council in December 2003, in the light of the Updated List of priorities (doc. 10747/08) adopted by the Council in June 2008, and of the New lines for action (doc. 17172/08) adopted by the Council in December 2008. Since the establishment of the European External Action Service (EEAS), the High Representative, supported by the European External Action Service (EEAS) staff, is fulfilling most of the tasks previously exercis