Commission Delegated Regulation (EU) 2025/2003 of 8 September 2025 amending Regulation (EU) 2021/821 of the European Parliament and of the Council as regards the list of dual-use items

In forceVersion 2025-09-08from 2025-11-15

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Contents

Preamble
1. Article 1
2. Article 2
ANNEX
ANNEX
ANNEX I LIST OF DUAL-USE ITEMS REFERRED TO IN ARTICLE 3 OF THIS REGULATION
PART I General Notes, Acronyms and Abbreviations, and Definitions
GENERAL NOTES TO ANNEX I 1.2.N.B.3.4.
NUCLEAR TECHNOLOGY NOTE (NTN) (To be read in conjunction with section E of Category 0.)
GENERAL TECHNOLOGY NOTE (GTN) Note: (To be read in conjunction with section E of Categories 1 to 9)
NUCLEAR SOFTWARE NOTE (NSN) Note: (This note overrides any control within section D of Category 0)
GENERAL SOFTWARE NOTE (GSN) (This note overrides any control within section D of Categories 1 to 9)
1. a.
GENERAL INFORMATION SECURITY NOTE (GISN)
EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION
ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: N.B.N.B.N.B.Note: Technical Note: Note:N.B.N.B.1.N.B.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See also a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: N.B.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: N.B.N.B.N.B.Note: Technical Note: Note:N.B. a.
DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: N.B.N.B.N.B.Note: Technical Note: Note:N.B.N.B.1.N.B.2.N.B.N.B.N.B.1.N.B.2.N.B. a.
PART II Category 0
CATEGORY 0 NUCLEAR MATERIALS, FACILITIES AND EQUIPMENT
0A0A001 a.
0B0B0010B0020B0030B0040B005 Technical Note: 0B006Note:0B007
0B0B001 a.
7. a.
13. a.
14. a.
5. a.
6. a.
0B0B0010B002 a.
0B0B0010B0020B003 a.
0B0B0010B0020B0030B004 a.
10.
0B0B0010B0020B0030B0040B005 Technical Note:
0B0B0010B0020B0030B0040B005 Technical Note: 0B006Note: a.
0C0C001Note:0C002Note:0C0030C004N.B.Note 1:Note 2:0C005
0C0C001Note: a.
PART III Category 1
CATEGORY 1 SPECIAL MATERIALS AND RELATED EQUIPMENT
1A1A0011A002N.B.Note 1:Note 2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.N.B.Note 1:Note 2:Note 3:1A006N.B.Note:1A007N.B. Technical Note: 1A0081A1021A202N.B.1A225 Technical Note: 1A2261A227 Technical Note:
1A1A001 a.
1A1A0011A002N.B. a.
1. a.
1A1A0011A002N.B.Note 1: a.
a.
b.
c.
d.
a.Note: Technical Note:
4. a.
d. Technical Note: Note 1:Note 2:Note:
b. Technical Note:
a. Technical Note:
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B2321B2331B234N.B.1B235 Technical Note:
1B1B001N.B. a.
1B1B001N.B. Technical Notes:
1B1B001N.B. Technical Notes: 1B002 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B003 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note: a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B. a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note: a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B118 a.
2. a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B201 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note: a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B230 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B231 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B232 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B2321B233 a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B2321B2331B234N.B. a.
1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B2321B2331B234N.B.1B235 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 Technical Notes: 1.2.3.Note 1:Note 2:1C3541C450N.B.1C513 Technical Notes:
1C Technical Note: a.
1C Technical Note: 1C001N.B.
a.Note 1:Note 2:
a.Note 1: a.
1. Technical Note:
1. a.
a.
b.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: a.
1. a.
2. a.
3. a.
4. a.
5. a.
1. Technical Note:
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes:
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C003 a. Technical Note:
3. a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C004 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C006 a.
3. a.
1. a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. a.
1. a.Note:
1. a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 a.Note:N.B.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C009 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2. a.Note:
a.
b.
1. a.
c.
d.
1:Note 2 Technical Notes: 1.2.
2. a.
1:Note 2: a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B. a.Technical Note:Note:
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: a.Note:
a.
b.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1: a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C107 a.N.B.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111 a.
1. Technical Note:
2. a. Technical Note:
3. a.
4.N.B. a.
5. Technical Note:
5. a.
6. a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1:
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 a.
1. a.
2. a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C118 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C210 a.Note:
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note:
1C225Note: Technical Note:
1C226 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C227 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C228 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C229 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note: a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note: a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C241 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351 a.
4. a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 a.
2. a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 Technical Notes: 1.2.3.Note 1:Note 2:1C354 a.
1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 Technical Notes: 1.2.3.Note 1:Note 2:1C3541C450N.B.
a.Note 1:Note 2:Note 3:Note 4:
b.Note 1:Note 2:Note 3:Note 4:
5.Note: a.
1D1D0011D0021D0031D1011D1031D201
1E1E0011E0021E1011E1021E1031E104Note:1E2011E2021E203
1E1E0011E002 a.
1. a.
PART IV Category 2
CATEGORY 2 MATERIALS PROCESSING
2AN.B.2A001N.B.2A1012A2252A226 Technical Note:
2AN.B.2A001N.B. a.Note: Technical Notes: 1.2.
2AN.B.2A001N.B.2A101 a.
2AN.B.2A001N.B.2A1012A225 a.
2. a.
2AN.B.2A001N.B.2A1012A2252A226 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350Note: Technical Notes: 1.2.2B3512B352N.B.2B510 Technical Notes: 1.2.3.4.
2B Technical Notes: 1.2. a.
2B Technical Notes: 1.2.3.4.5. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2: a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.
a.Note 1:Note 2:
a.Note 1: a.
1. a.
2. a.
4. Technical Notes: 1.2.
4. a.
a.
b.
c.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B003 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005 a.N.B.
1. a.
2. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006 a. Technical Note: N.B.
1. Technical Notes: 1.2.
3. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B008 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 a. Technical Note:
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B. a.Note:
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120 a.
1. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: a.
a.
b.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1: a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206 a. Technical Note:
2. a. Technical Note:
1. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B207 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B219 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B. a.Note:
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B227 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B228 a.Note:
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B. a.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350 a.N.B.
1. a.
2. a.
3. a.
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f.
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h.
i.
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350Note: Technical Notes: 1.2.2B351 a. Technical Note:
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350Note: Technical Notes: 1.2.2B3512B352 a.
2. a.
1. a.
2.Note 1:Note 2:
2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350Note: Technical Notes: 1.2.2B3512B352N.B.2B510 a.
2D2D001Note:2D002Note 1:Note 2:Note 3:2D0032D101N.B.2D2012D202Note:2D3512D352
2D2D001 a.
2E2E001Note:2E0022E0032E1012E2012E3012E503 Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Deposition techniques
2E2E001Note:2E0022E003 a.
1. a.
2E2E001Note:2E0022E0032E1012E2012E3012E503 g. Technical Note:
a.
b.
c.
a.N.B.1.N.B.2.N.B.3.
d.N.B.1.N.B.2.
e.
f.N.B.1.N.B.2.
g.
PART V Category 3
CATEGORY 3 ELECTRONICS
3ANote 1:Note 2:N.B.Note 3:3A001
a.Note: Technical Notes:
1. a.
2.Note: Technical Note: N.B.
2. a.
5. Technical Notes:
5. a.N.B.N.B. Technical Notes:
2. a.
4. a.
6. a.
7.Note:N.B.1N.B.2 Technical Notes:
7. a.
10. a.
3. a.
11. a.
12. Technical Note:
13. Technical Note:
13. a.
14.N.B.1.N.B.2. Technical Notes:
14. a.
b. Technical Note:
1.Note 1: a.
1:Note 2: a.
4. a.
5. a.
2.N.B.Note 1:Note 2:Note 3:
2.N.B. a.
3.Note 1:Note 2:
3. a.
4.N.B.1.N.B.2.N.B.3.Note 1:Note 2:
4. a.
5. a.
7. a.
8. a.
9. Technical Notes: 1.2.
9. a.
10. Technical Note:
11. Technical Note: N.B.
11. a.
12. Technical Notes:
12. a.
c.Note:
c.
1. Technical Note:
1. a.
d.
e. Technical Note:
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1. Technical Notes: 1.2.3.4.5.Note:
1. a.
2.N.B. a.
3.N.B.Note: a.
f.
g.Note 1:Note 2: Technical Note:
g.
2. a.
h.Note 1:Note 2:Note 3: Technical Note:
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i.Note: Technical Note:
i.
1. a.
2. a.
a.
6. Technical Notes:
6. a.
7. a.
1. a.
b.
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d.Note 1:Note 2: Technical Note:
1. Technical Note:
1. a.
3. a.
4. Technical Note:
4. a.
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5. a.
3. Technical Note:
3. a.
h.N.B. Technical Notes: Note:
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2. a.
h.N.B. Technical Notes:
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2. a.
c.Note: Technical Notes: 1.2.3.4.
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a.Note:

THE EUROPEAN COMMISSION,

Having regard to the Treaty on the Functioning of the European Union,

Having regard to Regulation (EU) 2021/821 of the European Parliament and of the Council of 20 May 2021 setting up a Union regime for the control of exports, brokering, technical assistance, transit and transfer of dual-use items, and in particular Article 17(1), point (a) thereof,

Whereas:

(1) Pursuant to Regulation (EU) 2021/821 dual-use items are to be subject to authorisation and export control when they are exported from or in transit through the Union, or are delivered to a third country as a result of brokering services provided by a broker resident or established in the Union.

(2) Annex I to Regulation (EU) 2021/821 establishes the common list of dual-use items that are subject to controls in the Union. Decisions regarding the items subject to such controls are taken within the framework of internationally agreed dual-use controls.

(3) The list of dual-use items set out in Annex I to Regulation (EU) 2021/821 needs to be updated regularly in order to ensure full compliance with international security obligations and commitments which the Member States and, where applicable, the Union have accepted as members of the Australia Group, the Missile Technology Control Regime, the Nuclear Suppliers Group, the Wassenaar Arrangement and the Chemical Weapons Convention. In this regard, the control lists adopted by the international non-proliferation regimes and export control arrangements have been changed during 2024. In addition, Member States have informed the Commission on 23 May 2025 that they have all accepted, also as members of the Wassenaar Arrangement, further commitments in order to control additional items. Annex I to Regulation (EU) 2021/821 should be amended accordingly. In order to facilitate references for export control authorities and economic operators, Annex I to Regulation (EU) 2021/821 should be replaced.

(4) In order to ensure full compliance with international security obligations as soon as possible, this Regulation should enter into force on the day following that of its publication in the Official Journal of the European Union.

(5) Regulation (EU) 2021/821 should therefore be amended accordingly,

HAS ADOPTED THIS REGULATION:

Article 1

Annex I to Regulation (EU) 2021/821 is replaced by the text in the Annex to this Regulation.

Article 2

This Regulation shall enter into force on the day following that of its publication in the Official Journal of the European Union.

This Regulation shall be binding in its entirety and directly applicable in all Member States. Done at Brussels, 8 September 2025. For the Commission The President Ursula von der Leyen

ANNEX

ANNEX I LIST OF DUAL-USE ITEMS REFERRED TO IN ARTICLE 3 OF THIS REGULATION

PART I General Notes, Acronyms and Abbreviations, and Definitions

GENERAL NOTES TO ANNEX I 1.2.N.B.3.4.

For control of goods which are designed or modified for military use, see the Common Military List of the European Union and relevant list(s) of controls on military goods maintained by individual EU Member States. References in this Annex that state SEE ALSO MILITARY GOODS CONTROLS refer to the same lists. The object of the controls contained in this Annex should not be defeated by the export of any non-controlled goods (including plant) containing one or more controlled components when the controlled component or components are the principal element of the goods and can feasibly be removed or used for other purposes. In judging whether the controlled component or components are to be considered the principal element, it is necessary to weigh the factors of quantity, value and technological know-how involved and other special circumstances which might establish the controlled component or components as the principal element of the goods being procured. Goods specified in this Annex include both new and used goods. In some instances, chemicals are listed by name and CAS number. The list applies to chemicals of the same structural formula (including hydrates, isotopically-labelled forms or all possible stereoisomers) regardless of name or CAS number. CAS numbers are shown to assist in identifying a particular chemical or mixture, irrespective of nomenclature. CAS numbers cannot be used as unique identifiers because some forms of the listed chemical have different CAS numbers, and mixtures containing a listed chemical may also have different CAS numbers.

NUCLEAR TECHNOLOGY NOTE (NTN) (To be read in conjunction with section E of Category 0.)

The technology directly associated with any goods controlled in Category 0 is controlled according to the provisions of Category 0. Technology for the development, production or use of goods under control remains under control even when applicable to non-controlled goods. The approval of goods for export also authorises the export to the same end-user of the minimum technology required for the installation, operation, maintenance and repair of the goods. Controls on technology transfer do not apply to information in the public domain or to basic scientific research.

GENERAL TECHNOLOGY NOTE (GTN) Note: (To be read in conjunction with section E of Categories 1 to 9)

The export of technology which is required for the development, production or use of goods controlled in Categories 1 to 9, is controlled according to the provisions of Categories 1 to 9. Technology required for the development, production or use of goods under control remains under control even when applicable to non-controlled goods. Controls do not apply to that technology which is the minimum necessary for the installation, operation, maintenance (checking) or repair of those goods which are not controlled or whose export has been authorised. This does not release such technology specified in 1E002.e., 1E002.f., 8E002.a. and 8E002.b. Controls on technology transfers do not apply to information in the public domain, to basic scientific research or to the minimum necessary information for patent applications.

NUCLEAR SOFTWARE NOTE (NSN) Note: (This note overrides any control within section D of Category 0)

Section D of Category 0 of this list does not control software which is the minimum necessary object code for the installation, operation, maintenance (checking) or repair of those items whose export has been authorised. The approval of goods for export also authorises the export to the same end-user of the minimum necessary object code for the installation, operation, maintenance (checking) or repair of the goods The Nuclear Software Note does not release software specified in Category 5, Part 2 (Information Security).

GENERAL SOFTWARE NOTE (GSN) (This note overrides any control within section D of Categories 1 to 9)

Categories 1 to 9 of this list do not control software which is any of the following:

Generally available to the public by being:

1. Sold from stock at retail selling points, without restriction, by means of:

1. a.

Over-the-counter transactions;

Mail order transactions;

Electronic transactions; or

Telephone call transactions; and

2.Note: Designed for installation by the user without further substantial support by the supplier; Entry a. of the General Software Note does not release software specified in Category 5, Part 2 (Information Security).

In the public domain; or

c.Note:

The minimum necessary object code for the installation, operation, maintenance (checking) or repair of those items whose export has been authorised. Entry c. of the General Software Note does not release software specified in Category 5, Part 2 (Information Security).

GENERAL INFORMATION SECURITY NOTE (GISN)

Information security items or functions should be considered against the provisions in Category 5, Part 2, even if they are components, software or functions of other items.

EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION

In accordance with the rules set out in the Interinstitutional style guide, for texts in English published in the Official Journal of the European Union: The text reproduced in this Annex follows the above-described practice.

a comma is used to separate the whole number from decimals,

whole numbers are presented in series of three, each series being separated by a thin space.

ACRONYMS AND ABBREVIATIONS USED IN THIS ANNEX

For acronyms and abbreviations used as defined terms, see 'Definitions of Terms used in this Annex'. ACRONYMS AND ABBREVIATIONS ABEC Annular Bearing Engineers Committee ABMA American Bearing Manufacturers Association ADC Analogue-to-Digital Converter AGMA American Gear Manufacturers’ Association AHRS Attitude and Heading Reference Systems AISI American Iron and Steel Institute ALE Atomic Layer Epitaxy ALU Arithmetic Logic Unit ANSI American National Standards Institute APP Adjusted Peak Performance APU Auxiliary Power Unit ASTM American Society for Testing and Materials ATC Air Traffic Control BJT Bipolar Junction Transistors BPP Beam Parameter Product BSC Base Station Controller CAD Computer-Aided-Design CAS Chemical Abstracts Service CCD Charge Coupled Device CDU Control and Display Unit CEP Circular Error Probable CMM Coordinate Measuring Machine CMOS Complementary Metal Oxide Semiconductor CNTD Controlled Nucleation Thermal Deposition CPLD Complex Programmable Logic Device CPU Central Processing Unit CVD Chemical Vapour Deposition CW Chemical Warfare CW (for lasers) Continuous Wave DAC Digital-to-Analogue Converter DANL Displayed Average Noise Level DBRN Data-Base Referenced Navigation DDS Direct Digital Synthesizer DMA Dynamic Mechanical Analysis DME Distance Measuring Equipment DMOSFET Diffused Metal Oxide Semiconductor Field Effect Transistor DS Directionally Solidified EB Exploding Bridge EB-PVD Electron Beam Physical Vapour Deposition EBW Exploding Bridge Wire ECAD Electronic Computer-Aided Design ECM Electro-Chemical Machining EDM Electrical Discharge Machines EFI Exploding Foil Initiators EIRP Effective Isotropic Radiated Power EMP Electromagnetic Pulse ENOB Effective Number of Bits ERF Electrorheological Finishing ERP Effective Radiated Power ESD Electrostatic Discharge ETO Emitter Turn-Off Thyristor ETT Electrical Triggering Thyristor EU European Union EUV Extreme Ultraviolet FADEC Full Authority Digital Engine Control FFT Fast Fourier Transform FPGA Field Programmable Gate Array FPIC Field Programmable Interconnect FPLA Field Programmable Logic Array FPLD Field Programmable Logic Device FPO Floating Point Operation FWHM Full-Width Half-Maximum GAAFET Gate-All-Around Field-Effect Transistor GLONASS Global Navigation Satellite System GNSS Global Navigation Satellite System GPS Global Positioning System GSM Global System for Mobile Communications GTO Gate Turn-off Thyristor HBT Heterojunction Bipolar Transistor HDMI High-Definition Multimedia Interface HEMT High Electron Mobility Transistor ICAO International Civil Aviation Organization IEC International Electrotechnical Commission IED Improvised Explosive Device IEEE Institute of Electrical and Electronic Engineers IFOV Instantaneous Field of View IGBT Insulated Gate Bipolar Transistor IGCT Integrated Gate Commutated Thyristor IHO International Hydrographic Organization ILS Instrument Landing System IMU Inertial Measurement Unit INS Inertial Navigation System IP Internet Protocol IRS Inertial Reference System IRU Inertial Reference Unit ISA International Standard Atmosphere ISAR Inverse Synthetic Aperture Radar ISO International Organization for Standardization ITU International Telecommunication Union JT Joule-Thomson LIDAR Light Detection and Ranging LIDT Laser Induced Damage Threshold LOA Length Overall LRU Line Replaceable Unit LTT Light Triggering Thyristor LUT Lookup Table MLS Microwave Landing Systems MMIC Monolithic Microwave Integrated Circuit MOCVD Metal Organic Chemical Vapour Deposition MOSFET Metal Oxide Semiconductor Field Effect Transistor MPM Microwave Power Module MRF Magnetorheological Finishing MRF Minimum Resolvable Feature size MRI Magnetic Resonance Imaging MTBF Mean-Time-Between-Failures MTTF Mean-Time-To-Failure NA Numerical Aperture NDT Non-Destructive Test NEQ Net Explosive Quantity NIJ National Institute of Justice OAM Operations, Administration or Maintenance OSI Open Systems Interconnection PAI Polyamide-imides PAR Precision Approach Radar PCL Passive Coherent Location PDK Process Design Kit PIN Personal Identification Number PMAC Permanent Magnet Alternating Current PMR Private Mobile Radio PVD Physical Vapour Deposition ppm parts per million QAM Quadrature-Amplitude-Modulation QE Quantum Efficiency RAP Reactive Atom Plasmas RF Radio Frequency rms root mean square RNC Radio Network Controller RNSS Regional Navigation Satellite System ROIC Read-out Integrated Circuit S-FIL Step and Flash Imprint Lithography SAR Synthetic Aperture Radar SAS Synthetic Aperture Sonar SC Single Crystal SCR Silicon Controlled Rectifier SFDR Spurious Free Dynamic Range SHPL Super High Powered Laser SLAR Sidelooking Airborne Radar SOI Silicon-on-Insulator SQUID Superconducting Quantum Interference Device SRA Shop Replaceable Assembly SRAM Static Random Access Memory SSB Single Sideband SSR Secondary Surveillance Radar SSS Side Scan Sonar TIR Total Indicated Reading TVR Transmitting Voltage Response u Atomic Mass Unit UPR Unidirectional Positioning Repeatability UTS Ultimate Tensile Strength UV Ultraviolet VJFET Vertical Junction Field Effect Transistor VOR Very High Frequency Omni-directional Range WHO World Health Organization WLAN Wireless Local Area Network

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: N.B.N.B.N.B.Note: Technical Note: Note:N.B.N.B.1.N.B.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.

Definitions of terms between 'single quotation marks' are given in a Technical Note to the relevant item. Definitions of terms between double quotation marks are as follows: Category references are given in brackets after the defined term. Accuracy (2 3 6 7), usually measured in terms of inaccuracy, means the maximum deviation, positive or negative, of an indicated value from an accepted standard or true value. Active flight control systems (7) are systems that function to prevent undesirable aircraft and missile motions or structural loads by autonomously processing outputs from multiple sensors and then providing necessary preventive commands to effect automatic control. Active pixel (6) is a minimum (single) element of the solid-state array which has a photoelectric transfer function when exposed to light (electromagnetic) radiation. Adjusted Peak Performance (4) is an adjusted peak rate at which digital computers perform 64-bit or larger floating point additions and multiplications, and is expressed in Weighted TeraFLOPS (WT) with units of 1012 adjusted floating point operations per second. See Category 4, Technical Note. Aircraft (1 6 7 9) means a fixed wing, swivel wing, rotary wing (helicopter), tilt rotor or tilt-wing airborne vehicle. See also civil aircraft. Airship (9) means a power-driven airborne vehicle that is kept buoyant by a body of gas (usually helium, formerly hydrogen) which is lighter than air. All compensations available (2) means after all feasible measures available to the manufacturer to minimise all systematic positioning errors for the particular machine-tool model or measuring errors for the particular coordinate measuring machine are considered. Allocated by the ITU (3 5) means the allocation of frequency bands according to the current edition of the ITU Radio Regulations for primary, permitted and secondary services. Additional and alternative allocations are not included. Angular position deviation (2) means the maximum difference between angular position and the actual, very accurately measured angular position after the workpiece mount of the table has been turned out of its initial position. Angle random walk (7) means the angular error build up with time that is due to white noise in angular rate (IEEE 528-2001). APP (4) is equivalent to Adjusted Peak Performance. Asymmetric algorithm (5) means a cryptographic algorithm using different, mathematically-related keys for encryption and decryption. A common use of asymmetric algorithms is key management. Authentication (5) means verifying the identity of a user, process or device, often as a prerequisite to allowing access to resources in an information system. This includes verifying the origin or content of a message or other information, and all aspects of access control where there is no encryption of files or text except as directly related to the protection of passwords, Personal Identification Numbers (PINs) or similar data to prevent unauthorised access. Average output power (6) means the total laser output energy, in joules, divided by the period over which a series of consecutive pulses is emitted, in seconds. For a series of uniformly spaced pulses it is equal to the total laser output energy in a single pulse, in joules, multiplied by the pulse frequency of the laser, in Hertz. Basic scientific research (GTN NTN) means experimental or theoretical work undertaken principally to acquire new knowledge of the fundamental principles of phenomena or observable facts, not primarily directed towards a specific practical aim or objective. Bias (accelerometer) (7) means the average over a specified time of accelerometer output, measured at specified operating conditions, that has no correlation with input acceleration or rotation. Bias is expressed in g or in metres per second squared (g or m/s2). (IEEE 528-2001) (Micro g equals 1 × 10-6 g). Bias (gyro) (7) means the average over a specified time of gyro output measured at specified operating conditions that has no correlation with input rotation or acceleration. Bias is typically expressed in degrees per hour (deg/hr). (IEEE 528-2001). Biological agents (1) are pathogens or toxins, selected or modified (such as altering purity, shelf life, virulence, dissemination characteristics, or resistance to UV radiation) to produce casualties in humans or animals, degrade equipment or damage crops or the environment. Charge multiplication (6) means a form of electronic image amplification defined as the generation of charge carriers as a result of an impact ionisation gain process. Charge multiplication sensors may take the form of an image intensifier tube, solid-state detector or focal plane array CEP (7) means Circular Error Probable - In a circular normal distribution, the radius of the circle containing 50 % of the individual measurements being made, or the radius of the circle within which there is a 50 % probability of being located. Chemical mixture (1) means a solid, liquid or gaseous product made up of two or more components which do not react together under the conditions under which the mixture is stored. Circulation-controlled anti-torque or circulation-controlled direction control systems (7) are systems that use air blown over aerodynamic surfaces to increase or control the forces generated by the surfaces. Civil aircraft (1 3 4 7) means those aircraft listed by designation in published airworthiness certification lists by the civil aviation authorities of one or more EU Member States or Wassenaar Arrangement Participating States to fly commercial civil internal and external routes or for legitimate civil, private or business use. See also aircraft. Compensation systems (6) consist of the primary scalar sensor, one or more reference sensors (e.g., vector magnetometers) together with software that permit reduction of the rigid body rotation noise of the platform. Composite (1 2 6 8 9) means a matrix and an additional phase or additional phases consisting of particles, whiskers, fibres or any combination thereof, present for a specific purpose or purposes. III/V compounds (3 6) means polycrystalline or binary or complex monocrystalline products consisting of elements of groups IIIA and VA of Mendeleyev's periodic classification table (e.g., gallium arsenide, gallium-aluminium arsenide, indium phosphide). Contouring control (2) means two or more numerically controlled motions operating in accordance with instructions that specify the next required position and the required feed rates to that position. These feed rates are varied in relation to each other so that a desired contour is generated. (Reference: ISO/DIS–2806:1980). Critical temperature (1 3 5) (sometimes referred to as the transition temperature) of a specific superconductive material means the temperature at which the material loses all resistance to the flow of direct electrical current. Cryptographic activation (5) means any technique that specifically activates or enables cryptographic capability of an item, by means of a mechanism implemented by the manufacturer of the item, where this mechanism is uniquely bound to any of the following: Cryptographic activation techniques and mechanisms may be implemented as hardware, software or technology. Mechanisms for cryptographic activation can, for example, be serial number-based licence keys or authentication instruments such as digitally signed certificates. Cryptography (5) means the discipline which embodies principles, means and methods for the transformation of data in order to hide its information content, prevent its undetected modification or prevent its unauthorised use. Cryptography is limited to the transformation of information using one or more 'secret parameters' (e.g., crypto variables) or associated key management. Cryptography does not include 'fixed' data compression or coding techniques. Cryptography includes decryption. 'Secret parameter': a constant or key kept from the knowledge of others or shared only within a group. 'Fixed': the coding or compression algorithm cannot accept externally supplied parameters (e.g., cryptographic or key variables) and cannot be modified by the user. CW laser (6) means a laser that produces a nominally constant output energy for greater than 0,25 seconds. Cyber incident response (4) means the process of exchanging necessary information on a cybersecurity incident with individuals or organisations responsible for conducting or coordinating remediation to address the cybersecurity incident. Data device (def) means equipment capable of transmitting or receiving sequences of digital information. Data-Based Referenced Navigation (DBRN) (7) Systems means systems which use various sources of previously measured geo-mapping data integrated to provide accurate navigation information under dynamic conditions. Data sources include bathymetric maps, stellar maps, gravity maps, magnetic maps or 3-D digital terrain maps. Depleted uranium (0) means uranium depleted in the isotope 235 below that occurring in nature. Development (GTN NTN All) is related to all phases prior to serial production, such as: design, design research, design analyses, design concepts, assembly and testing of prototypes, pilot production schemes, design data, process of transforming design data into a product, configuration design, integration design, layouts. Diffusion bonding (1 2) means a solid-state joining of at least two separate pieces of metals into a single piece with a joint strength equivalent to that of the weakest material, wherein the principal mechanism is interdiffusion of atoms across the interface. Digital computer (4 5) means equipment which can, in the form of one or more discrete variables, perform all of the following: Modifications of a stored sequence of instructions include replacement of fixed storage devices, but not a physical change in wiring or interconnections. Digital transfer rate (def) means the total bit rate of the information that is directly transferred on any type of medium. See also total digital transfer rate. Drift rate (gyro) (7) means the component of gyro output that is functionally independent of input rotation. It is expressed as an angular rate. (IEEE 528-2001). Effective gramme (0 1) of special fissile material means: Electronic assembly (2 3 4) means a number of electronic components (i.e., 'circuit elements', 'discrete components', integrated circuits, etc.) connected together to perform (a) specific function(s), replaceable as an entity and normally capable of being disassembled. 'Circuit element': a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc. 'Discrete component': a separately packaged 'circuit element' with its own external connections. Energetic materials (1) means substances or mixtures that react chemically to release energy required for their intended application. Explosives, pyrotechnics and propellants are subclasses of energetic materials. End-effectors (2) means grippers, 'active tooling units' and any other tooling that is attached to the baseplate on the end of a robot manipulator arm. 'Active tooling unit' means a device for applying motive power, process energy or sensing to the workpiece. Equivalent density (6) means the mass of an optic per unit optical area projected onto the optical surface. Equivalent standards (1) means comparable national or international standards recognised by one or more EU Member States or Wassenaar Arrangement Participating States and applicable to the relevant entry. Explosives (1) means solid, liquid or gaseous substances or mixtures of substances which, in their application as primary, booster, or main charges in warheads, demolition and other applications, are required to detonate. FADEC Systems (9) means Full Authority Digital Engine Control Systems – A digital electronic control system for a gas turbine engine that is able to autonomously control the engine throughout its whole operating range from demanded engine start until demanded engine shut-down, in both normal and fault conditions. Fibrous or filamentary materials (0 1 8 9) include: Fly-by-light system (7) means a primary digital flight control system employing feedback to control the aircraft during flight, where the commands to the effectors/actuators are optical signals. Fly-by-wire system (7) means a primary digital flight control system employing feedback to control the aircraft during flight, where the commands to the effectors/actuators are electrical signals. Focal plane array (6 8) means a linear or two-dimensional planar layer, or combination of planar layers, of individual detector elements, with or without readout electronics, which work in the focal plane. This is not intended to include a stack of single detector elements or any two, three or four element detectors provided time delay and integration is not performed within the element. Fractional bandwidth (3 5) means the instantaneous bandwidth divided by the centre frequency, expressed as a percentage. Frequency hopping (5 6) means a form of spread spectrum in which the transmission frequency of a single communication channel is made to change by a random or pseudo-random sequence of discrete steps. Frequency switching time (3) means the time (i.e., delay) taken by a signal when switched from an initial specified output frequency, to arrive at or within any of the following: Fuel cell (8) is an electrochemical device that converts chemical energy directly into Direct Current (DC) electricity by consuming fuel from an external source. Fusible (1) means capable of being cross-linked or polymerized further (cured) by the use of heat, radiation, catalysts, etc., or that can be melted without pyrolysis (charring). Gate-All-Around Field-Effect Transistor (GAAFET) (3) means a device having a single or multiple semiconductor conduction channel element(s) with a common gate structure that surrounds and controls current in all of the semiconductor conduction channel elements. This definition includes nanosheet or nanowire field-effect and surrounding gate transistors and other GAAFET semiconductor channel element structures. Guidance set (7) means systems that integrate the process of measuring and computing a vehicles position and velocity (i.e., navigation) with that of computing and sending commands to the vehicles flight control systems to correct the trajectory. Hard selectors (5) means data or set of data, related to an individual (e.g., family name, given name, e-mail, street address, phone number or group affiliations). High output diesel engines (9) means diesel engines with a specified brake mean effective pressure of 1,8 MPa or more at a speed of 2300 r.p.m., provided the rated speed is 2300 r.p.m. or more. Hybrid integrated circuit (3) means any combination of integrated circuit(s), or integrated circuit with 'circuit elements' or 'discrete components' connected together to perform (a) specific function(s), and having all of the following characteristics: 'Circuit element': a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc. 'Discrete component': a separately packaged 'circuit element' with its own external connections. Image enhancement (4) means the processing of externally derived information-bearing images by algorithms such as time compression, filtering, extraction, selection, correlation, convolution or transformations between domains (e.g., fast Fourier transform or Walsh transform). This does not include algorithms using only linear or rotational transformation of a single image, such as translation, feature extraction, registration or false coloration. Immunotoxin (1) is a conjugate of one cell specific monoclonal antibody and a toxin or sub-unit of toxin, that selectively affects diseased cells. In the public domain (GTN NTN GSN), as it applies herein, means technology or software which has been made available without restrictions upon its further dissemination (copyright restrictions do not remove technology or software from being in the public domain). Information security (GSN GISN 5) is all the means and functions ensuring the accessibility, confidentiality or integrity of information or communications, excluding the means and functions intended to safeguard against malfunctions. This includes cryptography, cryptographic activation, 'cryptanalysis', protection against compromising emanations and computer security. 'Cryptanalysis': analysis of a cryptographic system or its inputs and outputs to derive confidential variables or sensitive data, including clear text. Instantaneous bandwidth (3 5 7) means the bandwidth over which output power remains constant within 3 dB without adjustment of other operating parameters. Interior lining (9) is suited for the bond interface between the solid propellant and the case or insulating liner. Usually a liquid polymer based dispersion of refractory or insulating materials, e.g. carbon filled hydroxyl terminated polybutadiene (HTPB) or other polymer with added curing agents sprayed or screeded over a case interior. Interleaved Analogue-to-Digital Converter (ADC) (3) means devices that have multiple ADC units that sample the same analogue input at different times such that when the outputs are aggregated, the analogue input has been effectively sampled and converted at a higher sampling rate. Intrinsic Magnetic Gradiometer (6) is a single magnetic field gradient sensing element and associated electronics the output of which is a measure of magnetic field gradient. See also Magnetic Gradiometer. Intrusion software (4 5) means software specially designed or modified to avoid detection by 'monitoring tools', or to defeat 'protective countermeasures', of a computer or network-capable device, and performing any of the following: Intrusion software does not include any of the following: Network-capable devices include mobile devices and smart meters. 'Monitoring tools': software or hardware devices, that monitor system behaviours or processes running on a device. This includes antivirus (AV) products, end point security products, Personal Security Products (PSP), Intrusion Detection Systems (IDS), Intrusion Prevention Systems (IPS) or firewalls. 'Protective countermeasures': techniques designed to ensure the safe execution of code, such as Data Execution Prevention (DEP), Address Space Layout Randomisation (ASLR) or sandboxing. Isolated live cultures (1) includes live cultures in dormant form and in dried preparations. Isostatic presses (2) mean equipment capable of pressurising a closed cavity through various media (gas, liquid, solid particles, etc.) to create equal pressure in all directions within the cavity upon a workpiece or material. Laser (0 1 2 3 5 6 7 8 9) is an item that produces spatially and temporally coherent light through amplification by stimulated emission of radiation. CW laser; Super High Power Laser. Library (1) (parametric technical database) means a collection of technical information, reference to which may enhance the performance of relevant systems, equipment or components. Lighter-than-air vehicles (9) means balloons and airships that rely on hot air or other lighter-than-air gases such as helium or hydrogen for their lift. Linearity (2) (Usually measured in terms of non-linearity) means the maximum deviation of the actual characteristic (average of upscale and downscale readings), positive or negative, from a straight line so positioned as to equalise and minimise the maximum deviations. Local area network (4 5) is a data communication system having all of the following characteristics: Magnetic Gradiometers (6) are instruments designed to detect the spatial variation of magnetic fields from sources external to the instrument. They consist of multiple magnetometers and associated electronics the output of which is a measure of magnetic field gradient. See also Intrinsic Magnetic Gradiometer. Magnetometers (6) are instruments designed to detect magnetic fields from sources external to the instrument. They consist of a single magnetic field sensing element and associated electronics the output of which is a measure of the magnetic field. Materials resistant to corrosion by UF6 (0) include copper, copper alloys, stainless steel, aluminium, aluminium oxide, aluminium alloys, nickel or alloys containing 60 % or more nickel by weight and fluorinated hydrocarbon polymers. Maintenance Level I (7) means the failure of an inertial navigation unit is detected on the aircraft by indications from the Control and Display Unit (CDU) or by the status message from the corresponding sub-system. By following the manufacturer's manual, the cause of the failure may be localised at the level of the malfunctioning Line Replaceable Unit (LRU). The operator then removes the LRU and replaces it with a spare. Maintenance Level II (7) means the defective LRU is sent to the maintenance workshop (the manufacturer's or that of the operator responsible for level II maintenance). At the maintenance workshop, the malfunctioning LRU is tested by various appropriate means to verify and localise the defective Shop Replaceable Assembly (SRA) module responsible for the failure. This SRA is removed and replaced by an operative spare. The defective SRA (or possibly the complete LRU) is then shipped to the manufacturer. Maintenance Level II does not include the disassembly or repair of specified accelerometers or gyro sensors. Matrix (1 2 8 9) means a substantially continuous phase that fills the space between particles, whiskers or fibres. Measurement uncertainty (2) is the characteristic parameter which specifies in what range around the output value the correct value of the measurable variable lies with a confidence level of 95 %. It includes the uncorrected systematic deviations, the uncorrected backlash and the random deviations (ref. ISO 10360-2). Microcomputer microcircuit (3) means a monolithic integrated circuit or multichip integrated circuit containing an arithmetic logic unit (ALU) capable of executing general purpose instructions from an internal storage, on data contained in the internal storage. The internal storage may be augmented by an external storage. Microprocessor microcircuit (3) means a monolithic integrated circuit or multichip integrated circuit containing an arithmetic logic unit (ALU) capable of executing a series of general purpose instructions from an external storage. The microprocessor microcircuit normally does not contain integral user-accessible storage, although storage present on-the-chip may be used in performing its logic function. This includes chip sets which are designed to operate together to provide the function of a microprocessor microcircuit. Microorganisms (1 2) means bacteria, viruses, mycoplasms, rickettsiae, chlamydiae or fungi, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures. Missiles (1 2 3 6 7 9) means complete rocket systems and unmanned aerial vehicle systems, capable of delivering at least 500 kg payload to a range of at least 300 km. Monofilament (1) or filament is the smallest increment of fibre, usually several micrometres in diameter. Monolithic integrated circuit (3) means a combination of passive or active 'circuit elements' or both which: 'Circuit element' is a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc. Monolithic Microwave Integrated Circuit (MMIC) (3 5) means a monolithic integrated circuit that operates at microwave or millimetre wave frequencies. Monospectral imaging sensors (6) are capable of acquisition of imaging data from one discrete spectral band. Multichip integrated circuit (3) means two or more monolithic integrated circuits bonded to a common substrate. Multiple channel Analogue-to-Digital Converter (ADC) (3) means devices that integrate more than one ADC, designed so that each ADC has a separate analogue input. Multispectral imaging sensors (6) are capable of simultaneous or serial acquisition of imaging data from two or more discrete spectral bands. Sensors having more than twenty discrete spectral bands are sometimes referred to as hyperspectral imaging sensors. Non-repetitive pulsed (6) means lasers that produce either a single output pulse or that have a time interval between pulses exceeding one minute. Natural uranium (0) means uranium containing the mixtures of isotopes occurring in nature. Nuclear reactor (0) means a complete reactor capable of operation so as to maintain a controlled self-sustaining fission chain reaction. A nuclear reactor includes all the items within or attached directly to the reactor vessel, the equipment which controls the level of power in the core, and the components which normally contain, come into direct contact with or control the primary coolant of the reactor core. Numerical control (2) means the automatic control of a process performed by a device that makes use of numeric data usually introduced as the operation is in progress (Reference: ISO 2382:2015). Object code (GSN) means an equipment executable form of a convenient expression of one or more processes (source code (source language)) which has been compiled by programming system. Operations, Administration or Maintenance (OAM) (5) means performing one or more of the following tasks: OAM does not include any of the following tasks or their associated key management functions: Optical integrated circuit (3) means a monolithic integrated circuit or a hybrid integrated circuit, containing one or more parts designed to function as a photosensor or photoemitter or to perform (an) optical or (an) electro-optical function(s). Participating state (7 9) is a state participating in the Wassenaar Arrangement. (See www.wassenaar.org) Peak power (6) means the highest power attained in the pulse duration. Personal area network (5) means a data communication system having all of the following characteristics: The local area network extends beyond the geographical area of the personal area network. Previously separated (1) is the application of any process intended to increase the concentration of the controlled isotope. Principal element (4), as it applies in Category 4, is a principal element when its replacement value is more than 35 % of the total value of the system of which it is an element. Element value is the price paid for the element by the manufacturer of the system, or by the system integrator. Total value is the normal international selling price to unrelated parties at the point of manufacture or consolidation of shipment. Production (GTN NTN All) means all production phases, such as: construction, production engineering, manufacture, integration, assembly (mounting), inspection, testing, quality assurance. Production equipment (1 7 9) means tooling, templates, jigs, mandrels, moulds, dies, fixtures, alignment mechanisms, test equipment, other machinery and components therefor, limited to those specially designed or modified for development or for one or more phases of production. Production facilities (7 9) means production equipment and specially designed software therefor integrated into installations for development or for one or more phases of production. Program (1 7) means a sequence of instructions to carry out a process in, or convertible into, a form executable by an electronic computer. Pulse compression (6) means the coding and processing of a radar signal pulse of long time duration to one of short time duration, while maintaining the benefits of high pulse energy. Pulse duration (6) is the duration of a laser pulse and means the time between the half-power points on the leading edge and trailing edge of an individual pulse. Quantum cryptography (5) means a family of techniques for the establishment of shared key for cryptography by measuring the quantum-mechanical properties of a physical system (including those physical properties explicitly governed by quantum optics, quantum field theory or quantum electrodynamics). Radar spread spectrum (6) means any modulation technique for spreading energy originating from a signal with a relatively narrow frequency band, over a much wider band of frequencies, by using random or pseudo-random coding. Radiant sensitivity (6) is Radiant sensitivity (mA/W) = 0,807 × (wavelength in nm) × Quantum Efficiency (QE). QE is usually expressed as a percentage; however, for the purposes of this formula QE is expressed as a decimal number less than one, e.g., 78 % is 0,78. Real-time processing (6) means the processing of data by a computer system providing a required level of service, as a function of available resources, within a guaranteed response time, regardless of the load of the system, when stimulated by an external event. Repeatability (7) means the closeness of agreement among repeated measurements of the same variable under the same operating conditions when changes in conditions or non-operating periods occur between measurements. (Reference: IEEE 528-2001 (one sigma standard deviation)) Required (GTN 3 5 6 7 9), as applied to technology, refers to only that portion of technology which is peculiarly responsible for achieving or extending the controlled performance levels, characteristics or functions. Such required technology may be shared by different goods. Riot control agent (1) means substances which, under the expected conditions of use for riot control purposes, produce rapidly in humans sensory irritation or disabling physical effects which disappear within a short time following termination of exposure. Tear gases are a subset of riot control agents. Robot (2 8) means a manipulation mechanism, which may be of the continuous path or of the point-to-point variety, may use sensors, and has all the following characteristics: The above definition does not include the following devices: Roving (1) is a bundle (typically 12-120) of approximately parallel 'strands'. 'Strand' is a bundle of monofilaments (typically over 200) arranged approximately parallel. Sample rate (3) for an Analogue-to-Digital Converter (ADC) means the maximum number of samples that are measured at the analogue input over a period of one second, except for oversampling ADCs. For oversampling ADCs the sample rate is taken to be its output word rate. Sample rate may also be referred to as sampling rate, usually specified in Mega Samples Per Second (MSPS) or Giga Samples Per Second (GSPS), or conversion rate, usually specified in Hertz (Hz). Satellite (5 9) means a spacecraft, other than a space vehicle, designed to operate in orbit around Earth or another celestial body; satellites include orbital space stations. Satellite navigation system (5 7) means a system consisting of ground stations, a constellation of satellites, and receivers, that enables receiver locations to be calculated on the basis of signals received from the satellites. It includes Global Navigation Satellite Systems (GNSS) and Regional Navigation Satellite Systems (RNSS). Scale factor (gyro or accelerometer) (7) means the ratio of change in output to a change in the input intended to be measured. Scale factor is generally evaluated as the slope of the straight line that can be fitted by the method of least squares to input-output data obtained by varying the input cyclically over the input range. Signal analysers (3) means apparatus capable of measuring and displaying basic properties of the single-frequency components of multi-frequency signals. Signal processing (3 4 5 6) means the processing of externally derived information-bearing signals by algorithms such as time compression, filtering, extraction, selection, correlation, convolution or transformations between domains (e.g., fast Fourier transform or Walsh transform). Software (GSN All) means a collection of one or more programs or 'microprograms' fixed in any tangible medium of expression. 'Microprogram' means a sequence of elementary instructions, maintained in a special storage, the execution of which is initiated by the introduction of its reference instruction into an instruction register. Source code (or source language) (6 7 9) is a convenient expression of one or more processes which may be turned by a programming system into equipment executable form (object code (or object language)). Spacecraft (5 9) means a craft designed to operate in, persist in or transit through space in the form of a satellite, space probe, or space vehicle. Spacecraft does not include landers, rovers, or other craft, limited by design to operate on or beneath the surface of, or in the atmosphere of an extra-terrestrial celestial body, or sub-orbital craft. Spacecraft bus (9) means equipment that provides the support infrastructure of the spacecraft and location for the spacecraft mission equipment. Spacecraft mission equipment (9) means equipment designed to be located on a spacecraft bus, and to perform a mission in space or to enable the spacecraft to perform its mission (e.g., communications, observation, science, transport). Spacecraft mission equipment is sometimes referred to as a spacecraft payload. Space probe (9) means a spacecraft, other than a satellite or space vehicle, designed not to return to Earth. Space vehicle (9) means a spacecraft designed to provide transport for cargo or passengers. Space vehicles include craft designed to safely return to Earth. Space-qualified (3 6 7) means designed, manufactured or qualified through successful testing, for operation at altitudes greater than 100 km above the surface of the Earth. A determination that a specific item is Space-qualified by virtue of testing does not mean that other items in the same production run or model series are Space-qualified if not individually tested. Special fissile material (0) means plutonium-239, uranium-233, uranium enriched in the isotopes 235 or 233, and any material containing the foregoing. Specific modulus (0 1 9) is Young's modulus in pascals, equivalent to N/m2 divided by specific weight in N/m3, measured at a temperature of (296 ± 2) K ((23 ± 2) °C) and a relative humidity of (50 ± 5) %. Specific tensile strength (0 1 9) is ultimate tensile strength in pascals, equivalent to N/m2 divided by specific weight in N/m3, measured at a temperature of (296 ± 2) K ((23 ± 2) °C) and a relative humidity of (50 ± 5) %. Spinning mass gyros (7) means gyros which use a continually rotating mass to sense angular motion. Spread spectrum (5) means the technique whereby energy in a relatively narrow-band communication channel is spread over a much wider energy spectrum. Spread spectrum radar (6) - see Radar spread spectrum. Stability (7) means the standard deviation (1 sigma) of the variation of a particular parameter from its calibrated value measured under stable temperature conditions. This can be expressed as a function of time. States (not) Party to the Chemical Weapon Convention (1) are those states for which the Convention on the Prohibition of the Development, Production, Stockpiling and Use of Chemical Weapons has (not) entered into force. (See www.opcw.org) Steady State Mode (9) defines engine operation conditions, where the engine parameters, such as thrust/power, rpm and others, have no appreciable fluctuations, when the ambient air temperature and pressure at the engine inlet are constant. Strong mechanical bond (9) means a bond having a bond strength equal to or greater than propellant strength. Sub-orbital craft (9) means a craft having an enclosure designed for the transport of people or cargo which is designed to: Substrate (3) means a sheet of base material with or without an interconnection pattern and on which or within which 'discrete components' or integrated circuits or both can be located. 'Discrete component': a separately packaged 'circuit element' with its own external connections. 'Circuit element': a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc. Substrate blanks (3 6) means monolithic compounds with dimensions suitable for the production of optical elements such as mirrors or optical windows. Sub-unit of toxin (1) is a structurally and functionally discrete component of a whole toxin. Superalloys (2 9) means nickel-, cobalt- or iron-base alloys having a stress rupture life greater than 1000 hours at 400 MPa and an ultimate tensile strength greater than 850 MPa, at 922 K (649 °C) or higher. Superconductive (1 3 5 6 8) means materials, i.e., metals, alloys or compounds, which can lose all electrical resistance, i.e., which can attain infinite electrical conductivity and carry very large electrical currents without Joule heating. The superconductive state of a material is individually characterised by a critical temperature, a critical magnetic field, which is a function of temperature, and a critical current density which is, however, a function of both magnetic field and temperature. Super High Power Laser (SHPL) (6) means a laser capable of delivering (the total or any portion of) the output energy exceeding 1 kJ within 50 ms or having an average or CW power exceeding 20 kW. Superplastic forming (1 2) means a deformation process using heat for metals that are normally characterised by low values of elongation (less than 20 %) at the breaking point as determined at room temperature by conventional tensile strength testing, in order to achieve elongations during processing which are at least 2 times those values. Tape (1) is a material constructed of interlaced or unidirectional monofilaments, 'strands', rovings, tows, or yarns, etc., usually pre-impregnated with resin. 'Strand' is a bundle of monofilaments (typically over 200) arranged approximately parallel. Technology (GTN NTN All) means specific information necessary for the development, production or use of goods. This information takes the form of 'technical data' or 'technical assistance'. 'Technical assistance' may take forms such as instructions, skills, training, working knowledge and consulting services and may involve the transfer of 'technical data'. 'Technical data' may take forms such as blueprints, plans, diagrams, models, formulae, algorithms, tables, engineering designs and specifications, manuals and instructions written or recorded on other media or devices such as disk, tape, read-only memories. Tilting spindle (2) means a tool-holding spindle which alters, during the machining process, the angular position of its centre line with respect to any other axis. Time constant (6) is the time taken from the application of a light stimulus for the current increment to reach a value of 1-1/e times the final value (i.e., 63 % of the final value). Time-to-steady-state registration (6) (also referred to as the gravimeter’s response time) is the time over which the disturbing effects of platform induced accelerations (high frequency noise) are reduced. Tip shroud (9) means a stationary ring component (solid or segmented) attached to the inner surface of the engine turbine casing or a feature at the outer tip of the turbine blade, which primarily provides a gas seal between the stationary and rotating components. Total control of flight (7) means an automated control of aircraft state variables and flight path to meet mission objectives responding to real time changes in data regarding objectives, hazards or other aircraft. Total digital transfer rate (5) means the number of bits, including line coding, overhead and so forth per unit time passing between corresponding equipment in a digital transmission system. See also digital transfer rate. Tow (1) is a bundle of monofilaments, usually approximately parallel. Toxins (1 2) means toxins in the form of deliberately isolated preparations or mixtures, no matter how produced, other than toxins present as contaminants of other materials such as pathological specimens, crops, foodstuffs or seed stocks of microorganisms. Tunable (6) means the ability of a laser to produce a continuous output at all wavelengths over a range of several laser transitions. A line selectable laser produces discrete wavelengths within one laser transition and is not considered tunable. Unidirectional positioning repeatability (2) means the smaller of values R↑ and R↓ (forward and backward), as defined by 3.21 of ISO 230-2:2014 or national equivalents, of an individual machine tool axis. Unmanned Aerial Vehicle (UAV) (9) means any aircraft capable of initiating flight and sustaining controlled flight and navigation without any human presence on board. Uranium enriched in the isotopes 235 or 233 (0) means uranium containing the isotopes 235 or 233, or both, in an amount such that the abundance ratio of the sum of these isotopes to the isotope 238 is more than the ratio of the isotope 235 to the isotope 238 occurring in nature (isotopic ratio 0,71 per cent). Use (GTN NTN All) means operation, installation (including on-site installation), maintenance (checking), repair, overhaul and refurbishing. User-accessible programmability (6) means the facility allowing a user to insert, modify or replace programs by means other than: Vaccine (1) is a medicinal product in a pharmaceutical formulation licensed by, or having marketing or clinical trial authorisation from, the regulatory authorities of either the country of manufacture or of use, which is intended to stimulate a protective immunological response in humans or animals in order to prevent disease in those to whom or to which it is administered. Vacuum electronic devices (3) means electronic devices based on the interaction of an electron beam with an electromagnetic wave propagating in a vacuum circuit or interacting with radio-frequency vacuum cavity resonators. Vacuum electronic devices include klystrons, travelling-wave tubes, and their derivatives. Vulnerability disclosure (4) means the process of identifying, reporting or communicating a vulnerability to, or analysing a vulnerability with, individuals or organisations responsible for conducting or coordinating remediation for the purposes of resolving the vulnerability. Wall-plug efficiency (6) means the ratio of laser output power (or average output power) to total electrical input power required to operate the laser, including the power supply/conditioning and thermal conditioning/heat exchanger. Yarn (1) is a bundle of twisted 'strands'. 'Strand' is a bundle of monofilaments (typically over 200) arranged approximately parallel.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B.

1. A single instance of the item; or

2. One customer, for multiple instances of the item.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2. a.

Accept data;

Store data or instructions in fixed or alterable (writable) storage devices;

Process data by means of a stored sequence of instructions which is modifiable; and

Provide output of data.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B. a.

For plutonium isotopes and uranium-233, the isotope weight in grammes;

For uranium enriched 1 per cent or greater in the isotope uranium-235, the element weight in grammes multiplied by the square of its enrichment expressed as a decimal weight fraction;

For uranium enriched below 1 per cent in the isotope uranium-235, the element weight in grammes multiplied by 0,0001;

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B. a.

Continuous monofilaments;

Continuous yarns and rovings;

Tapes, fabrics, random mats and braids;

Chopped fibres, staple fibres and coherent fibre blankets;

Whiskers, either monocrystalline or polycrystalline, of any length;

Aromatic polyamide pulp.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B. a.

± 100 Hz of a final specified output frequency of less than 1 GHz; or

± 0,1 part per million of a final specified output frequency equal to or greater than 1 GHz.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B. a.

Containing at least one unencapsulated device;

Connected together using typical IC production methods;

Replaceable as an entity; and

Not normally capable of being disassembled.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. a.

The extraction of data or information, from a computer or network-capable device, or the modification of system or user data; or

The modification of the standard execution path of a program or process in order to allow the execution of externally provided instructions.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1. a.

Hypervisors, debuggers or Software Reverse Engineering (SRE) tools;

Digital Rights Management (DRM) software; or

Software designed to be installed by manufacturers, administrators or users, for the purposes of asset tracking or recovery.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See also a.

Allows an arbitrary number of independent data devices to communicate directly with each other; and

Is confined to a geographical area of moderate size (e.g., office building, plant, campus, warehouse).

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2. a.

Are formed by means of diffusion processes, implantation processes or deposition processes in or on a single semiconducting piece of material, a so-called chip;

Can be considered as indivisibly associated; and

Perform the function(s) of a circuit.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B. a.

Establishing or managing any of the following:

1. Accounts or privileges of users or administrators;

2. Settings of an item; or

3. Authentication data in support of the tasks described in paragraphs a.1. or a.2.;

Monitoring or managing the operating condition or performance of an item; or

Managing logs or audit data in support of any of the tasks described in paragraphs a. or b.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: a.

Provisioning or upgrading any cryptographic functionality that is not directly related to establishing or managing authentication data in support of the tasks described in paragraphs a.1. or a.2. above; or

Performing any cryptographic functionality on the forwarding or data plane of an item.

Allows an arbitrary number of independent or interconnected data devices to communicate directly with each other; and

Is confined to the communication between devices within the immediate physical vicinity of an individual person or device controller (e.g., single room, office, or automobile).

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: a.

Is multifunctional;

Is capable of positioning or orienting material, parts, tools or special devices through variable movements in three dimensional space;

Incorporates three or more closed or open loop servo-devices which may include stepping motors; and

Has user accessible programmability by means of teach/playback method or by means of an electronic computer which may be a programmable logic controller, i.e., without mechanical intervention.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: N.B.

1. Manipulation mechanisms which are only manually/ teleoperator controllable;

2. Fixed sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is mechanically limited by fixed stops, such as pins or cams. The sequence of motions and the selection of paths or angles are not variable or changeable by mechanical, electronic or electrical means;

3. Mechanically controlled variable sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is mechanically limited by fixed, but adjustable stops, such as pins or cams. The sequence of motions and the selection of paths or angles are variable within the fixed programme pattern. Variations or modifications of the programme pattern (e.g., changes of pins or exchanges of cams) in one or more motion axes are accomplished only through mechanical operations;

4. Non-servo-controlled variable sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is variable but the sequence proceeds only by the binary signal from mechanically fixed electrical binary devices or adjustable stops;

5. Stacker cranes defined as Cartesian coordinate manipulator systems manufactured as an integral part of a vertical array of storage bins and designed to access the contents of those bins for storage or retrieval.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: N.B.N.B.N.B.Note: Technical Note: Note:N.B. a.

Operate above the stratosphere;

Only perform a non-orbital trajectories; and

Land back on Earth with the people or cargo intact.

DEFINITIONS OF TERMS USED IN THIS ANNEX N.B.N.B.N.B.N.B.N.B.N.B. Technical Notes: 1.2. Notes: 1.2. Technical Notes: 1.2.N.B.N.B.N.B.1.N.B.2.N.B.N.B.N.B.N.B.1.N.B.2. Technical Note: N.B. Notes: 1.2. Technical Notes: 1.2.N.B. See alsoN.B.N.B.N.B.1.N.B.2.N.B.Note: Technical Note: Technical Note: Technical Note: N.B.N.B.N.B.Note: Technical Note: Note:N.B.N.B.1.N.B.2.N.B.N.B.N.B.1.N.B.2.N.B. a.

A physical change in wiring or interconnections; or

The setting of function controls including entry of parameters.

PART II Category 0

CATEGORY 0 NUCLEAR MATERIALS, FACILITIES AND EQUIPMENT

0A0A001 Systems, Equipment and Components Nuclear reactors and specially designed or prepared equipment and components therefor, as follows:

0A0A001 a.

Nuclear reactors;

Metal vessels, or major shop-fabricated parts therefor, including the reactor vessel head for a reactor pressure vessel, specially designed or prepared to contain the core of a nuclear reactor;

Manipulative equipment specially designed or prepared for inserting or removing fuel in a nuclear reactor;

Control rods specially designed or prepared for the control of the fission process in a nuclear reactor, support or suspension structures therefor, rod drive mechanisms and rod guide tubes;

Pressure tubes specially designed or prepared to contain both fuel elements and the primary coolant in a nuclear reactor;

f.N.B.

Zirconium metal tubes or zirconium alloy tubes (or assembles of tubes) specially designed or prepared for use as fuel cladding in a nuclear reactor, and in quantities exceeding 10 kg; For zirconium pressure tubes see 0A001.e. and for calandria tubes see 0A001.h.

Coolant pumps or circulators specially designed or prepared for circulating the primary coolant of nuclear reactors;

h. Technical Note:

'Nuclear reactor internals' specially designed or prepared for use in a nuclear reactor, including support columns for the core, fuel channels, calandria tubes, thermal shields, baffles, core grid plates, and diffuser plates; In 0A001.h. 'nuclear reactor internals' means any major structure within a reactor vessel which has one or more functions such as supporting the core, maintaining fuel alignment, directing primary coolant flow, providing radiation shields for the reactor vessel, and guiding in-core instrumentation.

i.Note:

Heat exchangers as follows: 0A001.i. does not control heat exchangers for the supporting systems of the reactor, e.g., the emergency cooling system or the decay heat cooling system.

1. Steam generators specially designed or prepared for the primary, or intermediate, coolant circuit of a nuclear reactor;

2. Other heat exchangers specially designed or prepared for use in the primary coolant circuit of a nuclear reactor;

Neutron detectors specially designed or prepared for determining neutron flux levels within the core of a nuclear reactor;

k. Technical Note:

'External thermal shields' specially designed or prepared for use in a nuclear reactor for the reduction of heat loss and also for the containment vessel protection. In 0A001.k. 'external thermal shields' means major structures placed over the reactor vessel which reduce heat loss from the reactor and reduce temperature within the containment vessel.

0B0B0010B0020B0030B0040B005 Technical Note: 0B006Note:0B007

Test, Inspection and Production Equipment Plant for the separation of isotopes of natural uranium, depleted uranium or special fissile materials, and specially designed or prepared equipment and components therefor, as follows: Specially designed or prepared auxiliary systems, equipment and components as follows, for isotope separation plant specified in 0B001, made of or protected by materials resistant to corrosion by UF6: Plant for the conversion of uranium and equipment specially designed or prepared therefor, as follows: Plant for the production or concentration of heavy water, deuterium and deuterium compounds and specially designed or prepared equipment and components therefor, as follows: Plant specially designed for the fabrication of nuclear reactor fuel elements and specially designed or prepared equipment therefor. Specially designed or prepared equipment for the fabrication of nuclear reactor fuel elements includes equipment which: Plant for the reprocessing of irradiated nuclear reactor fuel elements, and specially designed or prepared equipment and components therefor. 0B006 includes: Plant for the conversion of plutonium and equipment specially designed or prepared therefor, as follows:

0B0B001 a.

Plant specially designed for separating isotopes of natural uranium, depleted uranium, or special fissile materials, as follows:

1. Gas centrifuge separation plant;

2. Gaseous diffusion separation plant;

3. Aerodynamic separation plant;

4. Chemical exchange separation plant;

5. Ion-exchange separation plant;

6. Atomic vapour laser isotope separation plant;

7. Molecular laser isotope separation plant;

8. Plasma separation plant;

9. Electro magnetic separation plant;

b. Technical Note:

Gas centrifuges and assemblies and components, specially designed or prepared for gas centrifuge separation process, as follows: In 0B001.b. 'high strength-to-density ratio material' means any of the following:

1. Maraging steel capable of an ultimate tensile strength of 1,95 GPa or more;

2. Aluminium alloys capable of an ultimate tensile strength of 0,46 GPa or more; or

3. Fibrous or filamentary materials with a specific modulus of more than 3,18 × 106m and a specific tensile strength greater than 7,62 × 104 m;

1. Gas centrifuges;

2. Complete rotor assemblies;

3. Rotor tube cylinders with a wall thickness of 12 mm or less, a diameter of between 75 mm and 650 mm, made from 'high strength-to-density ratio materials';

4. Rings or bellows with a wall thickness of 3 mm or less and a diameter of between 75 mm and 650 mm and designed to give local support to a rotor tube or to join a number together, made from 'high strength-to-density ratio materials';

5. Baffles of between 75 mm and 650 mm diameter for mounting inside a rotor tube, made from 'high strength-to-density ratio materials';

6. Top or bottom caps of between 75 mm and 650 mm diameter to fit the ends of a rotor tube, made from 'high strength-to-density ratio materials';

7. Magnetic suspension bearings as follows:

7. a.

Bearing assemblies consisting of an annular magnet suspended within a housing made of or protected by materials resistant to corrosion by UF6 containing a damping medium and having the magnet coupling with a pole piece or second magnet fitted to the top cap of the rotor;

Active magnetic bearings specially designed or prepared for use with gas centrifuges;

8. Specially prepared bearings comprising a pivot-cup assembly mounted on a damper;

9. Molecular pumps comprised of cylinders having internally machined or extruded helical grooves and internally machined bores;

10. Ring-shaped motor stators for multiphase AC hysteresis (or reluctance) motors for synchronous operation within a vacuum at a frequency of 600 Hz or more and a power of 40 VA or more;

11. Centrifuge housing/recipients to contain the rotor tube assembly of a gas centrifuge, consisting of a rigid cylinder of wall thickness up to 30 mm with precision machined ends that are parallel to each other and perpendicular to the cylinder’s longitudinal axis to within 0,05° or less;

12. Scoops consisting of specially designed or prepared tubes for the extraction of UF6 gas from within the rotor tube by a Pitot tube action and capable of being fixed to the central gas extraction system;

13. Frequency changers (converters or inverters) specially designed or prepared to supply motor stators for gas centrifuge enrichment, having all of the following characteristics, and specially designed components therefor:

13. a.

A multiphase frequency output of 600 Hz or greater; and

High stability (with frequency control better than 0,2 %);

14. Shut-off and control valves as follows:

14. a.

Shut-off valves specially designed or prepared to act on the feed, product or tails UF6 gaseous streams of an individual gas centrifuge;

Bellows-sealed valves, shut-off or control, made of or protected by materials resistant to corrosion by UF6, with an inside diameter of 10 mm to 160 mm, specially designed or prepared for use in main or auxiliary systems of gas centrifuge enrichment plants;

Equipment and components, specially designed or prepared for gaseous diffusion separation process, as follows:

1. Gaseous diffusion barriers made of porous metallic, polymer or ceramic materials resistant to corrosion by UF6 with a pore size of 10 to 100 nm, a thickness of 5 mm or less, and, for tubular forms, a diameter of 25 mm or less;

2. Gaseous diffuser housings made of or protected by materials resistant to corrosion by UF6;

3. Compressors or gas blowers with a suction volume capacity of 1 m3/min or more of UF6, with a discharge pressure up to 500 kPa, and having a pressure ratio of 10:1 or less, and made of or protected by materials resistant to corrosion by UF6;

4. Rotary shaft seals for compressors or blowers specified in 0B001.c.3. and designed for a buffer gas in-leakage rate of less than 1000 cm3/min.;

5. Heat exchangers made of or protected by materials resistant to corrosion by UF6, and designed for a leakage pressure rate of less than 10 Pa per hour under a pressure differential of 100 kPa;

6. Bellows-sealed valves, manual or automated, shut-off or control, made of or protected by materials resistant to corrosion by UF6;

Equipment and components, specially designed or prepared for aerodynamic separation process, as follows:

1. Separation nozzles consisting of slit-shaped, curved channels having a radius of curvature less than 1 mm, resistant to corrosion by UF6, and having a knife-edge contained within the nozzle which separates the gas flowing through the nozzle into two streams;

2. Cylindrical or conical tubes, (vortex tubes), made of or protected by materials resistant to corrosion by UF6 and with one or more tangential inlets;

3. Compressors or gas blowers made of or protected by materials resistant to corrosion by UF6, and rotary shaft seals therefor;

4. Heat exchangers made of or protected by materials resistant to corrosion by UF6;

5. Separation element housings, made of or protected by materials resistant to corrosion by UF6 to contain vortex tubes or separation nozzles;

6. Bellows-sealed valves, manual or automated, shut-off or control, made of or protected by materials resistant to corrosion by UF6, with a diameter of 40 mm or more;

7. Process systems for separating UF6 from carrier gas (hydrogen or helium) to 1 ppm UF6 content or less, including:

7. a.

Cryogenic heat exchangers and cryoseparators capable of temperatures of 153K (-120 °C) or less;

Cryogenic refrigeration units capable of temperatures of 153 K (-120 °C) or less;

Separation nozzle or vortex tube units for the separation of UF6 from carrier gas;

UF6 cold traps capable of freezing out UF6;

Equipment and components, specially designed or prepared for chemical exchange separation process, as follows:

1. Fast-exchange liquid-liquid pulse columns with stage residence time of 30 s or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorinated hydrocarbon polymers or glass);

2. Fast-exchange liquid-liquid centrifugal contactors with stage residence time of 30 s or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorinated hydrocarbon polymers or glass);

3. Electrochemical reduction cells resistant to concentrated hydrochloric acid solutions, for reduction of uranium from one valence state to another;

4. Electrochemical reduction cells feed equipment to take U+4 from the organic stream and, for those parts in contact with the process stream, made of or protected by suitable materials (e.g. glass, fluorocarbon polymers, polyphenyl sulphate, polyether sulfone and resin-impregnated graphite);

5. Feed preparation systems for producing high purity uranium chloride solution consisting of dissolution, solvent extraction and/or ion exchange equipment for purification and electrolytic cells for reducing the uranium U+6 or U+4 to U+3;

6. Uranium oxidation systems for oxidation of U+3 to U+4;

Equipment and components, specially designed or prepared for ion-exchange separation process, as follows:

1. Fast reacting ion-exchange resins, pellicular or porous macro-reticulated resins in which the active chemical exchange groups are limited to a coating on the surface of an inactive porous support structure, and other composite structures in any suitable form, including particles or fibres, with diameters of 0,2 mm or less, resistant to concentrated hydrochloric acid and designed to have an exchange rate half-time of less than 10 s and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C);

2. Ion exchange columns (cylindrical) with a diameter greater than 1000 mm, made of or protected by materials resistant to concentrated hydrochloric acid (e.g. titanium or fluorocarbon plastics) and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C) and pressures above 0,7 MPa;

3. Ion exchange reflux systems (chemical or electrochemical oxidation or reduction systems) for regeneration of the chemical reducing or oxidizing agents used in ion exchange enrichment cascades;

Equipment and components, specially designed or prepared for laser-based separation processes using atomic vapour laser isotope separation, as follows:

1. Uranium metal vaporization systems designed to achieve a delivered power of 1 kW or more on the target for use in laser enrichment;

2.N.B. Liquid or vapour uranium metal handling systems specially designed or prepared for handling molten uranium, molten uranium alloys or uranium metal vapour for use in laser enrichment, and specially designed components therefor; SEE ALSO 2A225.

3. Product and tails collector assemblies for collecting uranium metal in liquid or solid form, made of or protected by materials resistant to the heat and corrosion of uranium metal vapour or liquid, such as yttria-coated graphite or tantalum;

4. Separator module housings (cylindrical or rectangular vessels) for containing the uranium metal vapour source, the electron beam gun and the product and tails collectors;

5.N.B. Lasers or laser systems specially designed or prepared for the separation of uranium isotopes with a spectrum frequency stabilisation for operation over extended periods of time; SEE ALSO 6A005 AND 6A205.

Equipment and components, specially designed or prepared for laser-based separation processes using molecular laser isotope separation, as follows:

1. Supersonic expansion nozzles for cooling mixtures of UF6 and carrier gas to 150 K (-123 °C) or less and made from materials resistant to corrosion by UF6;

2. Product or tails collector components or devices specially designed or prepared for collecting uranium material or uranium tails material following illumination with laser light, made of materials resistant to corrosion by UF6;

3. Compressors made of or protected by materials resistant to corrosion by UF6, and rotary shaft seals therefor;

4. Equipment for fluorinating UF5 (solid) to UF6 (gas);

5. Process systems for separating UF6 from carrier gas (e.g. nitrogen, argon or other gas) including:

5. a.

Cryogenic heat exchangers and cryoseparators capable of temperatures of 153 K (-120 °C) or less;

Cryogenic refrigeration units capable of temperatures of 153 K (-120 °C) or less;

UF6 cold traps capable of freezing out UF6;

6.N.B. Lasers or laser systems specially designed or prepared for the separation of uranium isotopes with a spectrum frequency stabilisation for operation over extended periods of time; SEE ALSO 6A005 AND 6A205.

Equipment and components, specially designed or prepared for plasma separation process, as follows:

1. Microwave power sources and antennae for producing or accelerating ions, with an output frequency greater than 30 GHz and mean power output greater than 50 kW;

2. Radio frequency ion excitation coils for frequencies of more than 100 kHz and capable of handling more than 40 kW mean power;

3. Uranium plasma generation systems;

4. Not used;

5. Product and tails collector assemblies for uranium metal in solid form, made of or protected by materials resistant to the heat and corrosion of uranium vapour such as yttria-coated graphite or tantalum;

6. Separator module housings (cylindrical) for containing the uranium plasma source, radio-frequency drive coil and the product and tails collectors and made of a suitable non-magnetic material (e.g. stainless steel);

Equipment and components, specially designed or prepared for electromagnetic separation process, as follows:

1. Ion sources, single or multiple, consisting of a vapour source, ioniser, and beam accelerator made of suitable non-magnetic materials (e.g. graphite, stainless steel, or copper) and capable of providing a total ion beam current of 50 mA or greater;

2. Ion collector plates for collection of enriched or depleted uranium ion beams, consisting of two or more slits and pockets and made of suitable non-magnetic materials (e.g. graphite or stainless steel);

3. Vacuum housings for uranium electromagnetic separators made of non-magnetic materials (e.g. stainless steel) and designed to operate at pressures of 0,1 Pa or lower;

4. Magnet pole pieces with a diameter greater than 2 m;

5.N.B. High voltage power supplies for ion sources, having all of the following characteristics: SEE ALSO 3A227.

5. a.

Capable of continuous operation;

Output voltage of 20000 V or greater;

Output current of 1 A or greater; and

Voltage regulation of better than 0,01 % over a period of 8 hours;

6.N.B. Magnet power supplies (high power, direct current) having all of the following characteristics: SEE ALSO 3A226.

6. a.

Capable of continuous operation with a current output of 500 A or greater at a voltage of 100 V or greater; and

Current or voltage regulation better than 0,01 % over a period of 8 hours.

0B0B0010B002 a.

Feed autoclaves, ovens or systems used for passing UF6 to the enrichment process;

Desublimers or cold traps, used to remove UF6 from the enrichment process for subsequent transfer upon heating;

Product and tails stations for transferring UF6 into containers;

Liquefaction or solidification stations used to remove UF6 from the enrichment process by compressing, cooling and converting UF6 to a liquid or solid form;

Piping systems and header systems specially designed or prepared for handling UF6 within gaseous diffusion, centrifuge or aerodynamic cascades;

Vacuum systems and pumps as follows:

1. Vacuum manifolds, vacuum headers or vacuum pumps having a suction capacity of 5 m3/minute or more;

2. Vacuum pumps specially designed for use in UF6 bearing atmospheres made of, or protected by, materials resistant to corrosion by UF6; or

3. Vacuum systems consisting of vacuum manifolds, vacuum headers and vacuum pumps, and designed for service in UF6-bearing atmospheres;

UF6 mass spectrometers/ion sources capable of taking on-line samples from UF6 gas streams and having all of the following characteristics:

1. Capable of measuring ions of 320 atomic mass units or greater and having a resolution of better than 1 part in 320;

2. Ion sources constructed of or protected by nickel, nickel-copper alloys with a nickel content of 60 % or more by weight, or nickel-chrome alloys;

3. Electron bombardment ionisation sources; and

4. Having a collector system suitable for isotopic analysis.

0B0B0010B0020B003 a.

Systems for the conversion of uranium ore concentrates to UO3;

Systems for the conversion of UO3 to UF6;

Systems for the conversion of UO3 to UO2;

Systems for the conversion of UO2 to UF4;

Systems for the conversion of UF4 to UF6;

Systems for the conversion of UF4 to uranium metal;

Systems for the conversion of UF6 to UO2;

Systems for the conversion of UF6 to UF4;

Systems for the conversion of UO2 to UCl4.

0B0B0010B0020B0030B004 a.

Plant for the production of heavy water, deuterium or deuterium compounds, as follows:

1. Water-hydrogen sulphide exchange plants;

2. Ammonia-hydrogen exchange plants;

3. Combined Electrolysis and Catalytic Exchange (CECE) plants;

4. Combined Industrial Reforming and Catalytic Exchange (CIRCE) plants;

5. Bithermal Hydrogen-Water exchange (BHW) plants;

Equipment and components, as follows:

1. Water-hydrogen sulphide exchange towers with diameters of 1,5 m or more, capable of operating at pressures greater than or equal to 2 MPa;

2. Single stage, low head (i.e., 0,2 MPa) centrifugal blowers or compressors for hydrogen sulphide gas circulation (i.e., gas containing more than 70 % by weight hydrogen sulphide, H2S) with a throughput capacity greater than or equal to 5 m3/s when operating at pressures greater than or equal to 1,8 MPa suction and having seals designed for wet H2S service;

3. Ammonia-hydrogen exchange towers greater than or equal to 35 m in height with diameters of 1,5 m or greater capable of operating at pressures greater than 15 MPa;

4. Tower internals, including stage contactors, and stage pumps, including those which are submersible, for heavy water production utilising the ammonia-hydrogen exchange process;

5. Ammonia crackers with operating pressures greater than or equal to 3 MPa for heavy water production utilising the ammonia-hydrogen exchange process;

6. Not used;

7. Catalytic burners for the conversion of enriched deuterium gas into heavy water utilising the ammonia-hydrogen exchange process;

8. Complete heavy water finishing units, upgrade systems, or columns with diameters of 0.1 m or greater therefor, for the upgrade of heavy water to reactor-grade deuterium concentration;

9. Ammonia synthesis converters or synthesis units specially designed or prepared for heavy water production utilising the ammonia-hydrogen exchange process.

10. Complete columns or towers specially designed or prepared for hydrogen isotope exchange having all of the following:

10.

1. Packed with random or structured wet-proofed platinised catalysts;

2. Constructed of carbon steel or stainless steel;

3. Capable of operating with pressure in the range of 0.1 to 4 MPa; and

4. Capable of operating at temperatures in the range of 293 K (20 °C) to 473 K (200 °C).

0B0B0010B0020B0030B0040B005 Technical Note:

1. Normally comes into direct contact with or directly processes or controls the production flow of nuclear materials;

2. Seals the nuclear materials within the cladding;

3. Checks the integrity of the cladding or the seal;

4. Checks the finish treatment of the sealed fuel; or

5. Is used for assembling reactor elements.

0B0B0010B0020B0030B0040B005 Technical Note: 0B006Note: a.

Plant for the reprocessing of irradiated nuclear reactor fuel elements including equipment and components which normally come into direct contact with and directly control the irradiated fuel and the major nuclear material and fission product processing streams;

Fuel element decladding equipment and chopping or shredding machines, i.e., remotely operated equipment to cut, chop or shear irradiated nuclear reactor fuel assemblies, bundles or rods;

Dissolver vessels or dissolvers employing mechanical devices specially designed or prepared for the dissolution of irradiated nuclear reactor fuel, which are capable of withstanding hot, highly corrosive liquids, and which can be remotely loaded, operated and maintained;

Solvent extractors, such as packed or pulsed columns, mixer settlers or centrifugal contractors, resistant to the corrosive effects of nitric acid and specially designed or prepared for use in a plant for the reprocessing of irradiated natural uranium, depleted uranium or special fissile materials;

e. Technical Note:

Holding or storage vessels specially designed to be critically safe and resistant to the corrosive effects of nitric acid; Holding or storage vessels may have the following features:

1. Walls or internal structures with a boron equivalent (calculated for all constituent elements as defined in the note to 0C004) of at least two per cent;

2. A maximum diameter of 175 mm for cylindrical vessels; or

3. A maximum width of 75 mm for either a slab or annular vessel.

Neutron measurement systems specially designed or prepared for integration and use with automated process control systems in a plant for the reprocessing of irradiated natural uranium, depleted uranium or special fissile materials.

0B0B0010B0020B0030B0040B005 Technical Note: 0B006Note:0B007 a.

Systems for the conversion of plutonium nitrate to oxide;

Systems for plutonium metal production.

0C0C001Note:0C002Note:0C0030C004N.B.Note 1:Note 2:0C005

Materials Natural uranium or depleted uranium or thorium in the form of metal, alloy, chemical compound or concentrate and any other material containing one or more of the foregoing; 0C001 does not control the following: Special fissile materials 0C002 does not control four effective grammes or less when contained in a sensing component in instruments. Deuterium, heavy water (deuterium oxide) and other compounds of deuterium, and mixtures and solutions containing deuterium, in which the isotopic ratio of deuterium to hydrogen exceeds 1:5000. Graphite having a purity level better than 5 parts per million 'boron equivalent' and with a density greater than 1,50 g/cm3 for use in a nuclear reactor, in quantities exceeding 1 kg. SEE ALSO 1C107. For the purpose of export control, the competent authorities of the EU Member State in which the exporter is established will determine whether or not the exports of graphite meeting the above specifications are for nuclear reactor use. 0C004 does not control graphite having a purity level better than 5 ppm (parts per million) boron equivalent and with a density greater than 1,50 g/cm3 not for use in a nuclear reactor. In 0C004, 'boron equivalent' (BE) is defined as the sum of BEz for impurities (excluding BEcarbon since carbon is not considered an impurity) including boron, where: BEZ (ppm) = CF × concentration of element Z in ppm; where CF is the conversion factorσZABσBAZ and σB and σZ are the thermal neutron capture cross sections (in barns) for naturally occurring boron and element Z respectively; and AB and AZ are the atomic masses of naturally occurring boron and element Z respectively. Specially prepared compounds or powders for the manufacture of gaseous diffusion barriers, resistant to corrosion by UF6 (e.g. nickel or alloys containing 60 % by weight or more nickel, aluminium oxide and fully fluorinated hydrocarbon polymers), having a purity of 99,9 % by weight or more and a particle size less than 10 μm measured by ASTM B330 standard and a high degree of particle size uniformity.

0C0C001Note: a.

Four grammes or less of natural uranium or depleted uranium when contained in a sensing component in instruments;

Depleted uranium specially fabricated for the following civil non-nuclear applications:

1. Shielding;

2. Packaging;

3. Ballasts having a mass not greater than 100 kg;

4. Counter-weights having a mass not greater than 100 kg;

Alloys containing less than 5 % thorium;

Ceramic products containing thorium, which have been manufactured for non-nuclear use.

0D0D001 Software Software specially designed or modified for the development, production or use of goods specified in this Category.

0E0E001 Technology Technology according to the Nuclear Technology Note for the development, production or use of goods specified in this Category.

PART III Category 1

CATEGORY 1 SPECIAL MATERIALS AND RELATED EQUIPMENT

1A1A0011A002N.B.Note 1:Note 2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.N.B.Note 1:Note 2:Note 3:1A006N.B.Note:1A007N.B. Technical Note: 1A0081A1021A202N.B.1A225 Technical Note: 1A2261A227 Technical Note:

Systems, Equipment and Components Components made from fluorinated compounds, as follows: Composite structures or laminates, as follows: SEE ALSO 1A202, 9A010 and 9A110. 1A002 does not control composite structures or laminates made from epoxy resin impregnated carbon fibrous or filamentary materials for the repair of civil aircraft structures or laminates, having all of the following: 1A002 does not control semi-finished items specially designed for purely civilian applications as follows: 1A002.b.1. does not control semi-finished items containing a maximum of two dimensions of interwoven filaments and specially designed for applications as follows: 1A002 does not control finished items specially designed for a specific application. 1A002.b.1. does not control mechanically chopped, milled, or cut carbon fibrous or filamentary materials 25,0 mm or less in length. Manufactures of non-fusible aromatic polyimides in film, sheet, tape or ribbon form having any of the following: 1A003 does not control manufactures when coated or laminated with copper and designed for the production of electronic printed circuit boards. For fusible aromatic polyimides in any form, see 1C008.a.3. Protective and detection equipment and components not specially designed for military use, as follows: SEE ALSO MILITARY GOODS CONTROLS, 2B351 AND 2B352. 1A004 includes equipment and components that have been identified, successfully tested to national standards or otherwise proven effective, for the detection of or defence against 'radioactive materials', biological agents, chemical warfare agents, 'simulants' or riot control agents, even if such equipment or components are used in civil industries such as mining, quarrying, agriculture, pharmaceuticals, medical, veterinary, environmental, waste management, or the food industry. 'Simulant' is a substance or material that is used in place of toxic agent (chemical or biological) in training, research, testing or evaluation. For the purposes of 1A004, 'radioactive materials' are those selected or modified to increase their effectiveness in producing casualties in humans or animals, degrading equipment or damaging crops or the environment. Body armour and components therefor, as follows: SEE ALSO MILITARY GOODS CONTROLS. For fibrous or filamentary materials used in the manufacture of body armour, see 1C010. 1A005 does not control body armour when accompanying its user for the user's own personal protection. 1A005 does not control body armour designed to provide frontal protection only from both fragment and blast from non-military explosive devices. 1A005 does not control body armour designed to provide protection only from knife, spike, needle or blunt trauma. Equipment, specially designed or modified for the disposal of Improvised Explosive Devices (IEDs), as follows, and specially designed components and accessories therefor: SEE ALSO MILITARY GOODS CONTROLS. 1A006 does not control equipment when accompanying its operator. Equipment and devices, specially designed to initiate charges and devices containing energetic materials, by electrical means, as follows: SEE ALSO MILITARY GOODS CONTROLS, 3A229 AND 3A232. For the purposes of 1A007, the word initiator or igniter is sometimes used in place of the word detonator. Charges, devices and components, as follows: Resaturated pyrolised carbon-carbon components designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. Composite structures, other than those specified in 1A002, in the form of thin-walled tubes and having all of the following characteristics: SEE ALSO 9A010 AND 9A110. Wet-proofed platinised catalysts specially designed or prepared for promoting the hydrogen isotope exchange reaction between hydrogen and water for the recovery of tritium from water or for the production or upgrading of heavy water. In heavy water moderated reactors, upgraders maintain the heavy water concentration in the reactor core. Wet-proofed platinised catalysts can also be used to upgrade heavy water. Specialised packings which may be used in separating heavy water from ordinary water, having both of the following characteristics: High-density (lead glass or other) radiation shielding windows, having all of the following characteristics, and specially designed frames therefor: In 1A227 the term 'cold area' means the viewing area of the window exposed to the lowest level of radiation in the design application.

1A1A001 a.

Seals, gaskets, sealants or fuel bladders, specially designed for aircraft or aerospace use, made from more than 50 % by weight of any of the materials specified in 1C009.b. or 1C009.c.;

Not used;

Not used.

1A1A0011A002N.B. a.

Made from any of the following:

1. An organic matrix and fibrous or filamentary materials specified in 1C010.c. or 1C010.d.: or

2. Prepregs or preforms specified in 1C010.e.;

Made from a metal or carbon matrix, and any of the following:

1. Carbon fibrous or filamentary materials having all of the following:

1. a.

A specific modulus exceeding 10,15 × 106 m; and

A specific tensile strength exceeding 17,7 × 104 m; or

2. Materials specified in 1C010.c.

1A1A0011A002N.B.Note 1: a.

An area not exceeding 1 m2;

A length not exceeding 2,5 m; and

A width exceeding 15 mm.

1A1A0011A002N.B.Note 1:Note 2:

a.

Sporting goods;

b.

Automotive industry;

c.

Machine tool industry;

d.

Medical applications.

2:Note 3:

a.

Metal heat-treatment furnaces for tempering metals;

b.

Silicon boule production equipment.

2:Note 3:Note 4:Note 5:1A003

a.

A thickness exceeding 0,254 mm; or

b.

Coated or laminated with carbon, graphite, metals or magnetic substances.

2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B.

a.Note: Technical Note:

Full face masks, filter canisters and decontamination equipment therefor, designed or modified for defence against any of the following, and specially designed components therefor: 1A004.a. includes Powered Air Purifying Respirators (PAPR) that are designed or modified for defence against agents or materials, listed in 1A004.a. For the purposes of 1A004.a.:

1. Full face masks are also known as gas masks.

2. Filter canisters include filter cartridges.

1. Biological agents;

2. 'Radioactive materials';

3. Chemical warfare (CW) agents; or

4. Riot control agents, including:

4. a.

α-Bromobenzeneacetonitrile, (Bromobenzyl cyanide) (CA) (CAS 5798-79-8);

[(2-Chlorophenyl) methylene] propanedinitrile, (o-Chlorobenzylidenemalononitrile) (CS) (CAS 2698-41-1);

2-Chloro-1-phenylethanone, Phenylacyl chloride (ω-chloroacetophenone) (CN) (CAS 532-27-4);

Dibenz-(b,f)-1,4-oxazephine (CR) (CAS 257-07-8);

10-Chloro-5,10-dihydrophenarsazine, (Phenarsazine chloride), (Adamsite), (DM) (CAS 578-94-9);

N-Nonanoylmorpholine, (MPA) (CAS 5299-64-9);

b.

Protective suits, gloves and shoes, specially designed or modified for defence against any of the following:

1. Biological agents;

2. 'Radioactive materials'; or

3. Chemical warfare (CW) agents;

c.

Detection systems, specially designed or modified for detection or identification of any of the following, and specially designed components therefor:

1. Biological agents;

2. 'Radioactive materials'; or

3. Chemical warfare (CW) agents;

d. Technical Note: Note 1:Note 2:Note:

Electronic equipment designed for automatically detecting or identifying the presence of explosives residues and utilising 'trace detection' techniques (e.g., surface acoustic wave, ion mobility spectrometry, differential mobility spectrometry, mass spectrometry). For the purposes of 1A004.d., 'trace detection' is defined as the capability to detect less than 1 ppm vapour, or 1 mg solid or liquid. 1A004.d. does not control equipment specially designed for laboratory use. 1A004.d. does not control non-contact walk-through security portals. 1A004 does not control:

Personal radiation monitoring dosimeters;

Occupational health or safety equipment limited by design or function to protect against hazards specific to residential safety or civil industries, including:

1. mining;

2. quarrying;

3. agriculture;

4. pharmaceutical;

5. medical;

6. veterinary;

7. environmental;

8. waste management;

9. food industry.

2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.

a.

Soft body armour not manufactured to military standards or specifications, or to their equivalents, and specially designed components therefor;

b.

Hard body armour plates providing ballistic protection equal to or less than level IIIA (NIJ 0101.06, July 2008), or equivalent standards.

2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.N.B.Note 1:Note 2:Note 3:1A006N.B.

a.

Remotely operated vehicles;

b. Technical Note:

'Disruptors'. For the purposes of 1A006.b. 'disruptors' are devices specially designed for the purpose of preventing the operation of an explosive device by projecting a liquid, solid or frangible projectile.

2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.N.B.Note 1:Note 2:Note 3:1A006N.B.Note:1A007N.B. Technical Note:

a.

Explosive detonator firing sets designed to drive explosive detonators specified in 1A007.b.;

b. Technical Note:

Electrically driven explosive detonators as follows: For the purposes of 1A007.b., the detonators of concern all utilise a small electrical conductor (bridge, bridge wire or foil) that explosively vaporises when a fast, high-current electrical pulse is passed through it. In non-slapper types, the exploding conductor starts a chemical detonation in a contacting high explosive material such as PETN (pentaerythritoltetranitrate). In slapper detonators, the explosive vaporization of the electrical conductor drives a flyer or slapper across a gap, and the impact of the slapper on an explosive starts a chemical detonation. The slapper in some designs is driven by magnetic force. The term exploding foil detonator may refer to either an EB or a slapper-type detonator.

b.

1. Exploding bridge (EB);

2. Exploding bridge wire (EBW);

3. Slapper;

4. Exploding foil initiators (EFI).

2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.N.B.Note 1:Note 2:Note 3:1A006N.B.Note:1A007N.B. Technical Note: 1A008

a. Technical Note:

'Shaped charges' having all of the following: For the purposes of 1A008.a., 'shaped charges' are explosive charges shaped to focus the effects of the explosive blast.

a.

1. Net Explosive Quantity (NEQ) greater than 90 g; and

2. Outer casing diameter equal to or greater than 75 mm;

b.

Linear shaped cutting charges having all of the following, and specially designed components therefor:

1. An explosive load greater than 40 g/m; and

2. A width of 10 mm or more;

c.

Detonating cord with explosive core load greater than 64 g/m;

d.

Cutters, other than those specified in 1A008.b., and severing tools, having a Net Explosive Quantity (NEQ) greater than 3,5 kg.

2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.N.B.Note 1:Note 2:Note 3:1A006N.B.Note:1A007N.B. Technical Note: 1A0081A1021A202N.B.

a.

An inside diameter of between 75 mm and 650 mm;

b.

A thickness of 12 mm or less; and

c.

Made with any of the fibrous or filamentary materials specified in 1C010.a. or b. or 1C210.a. or with carbon prepreg materials specified in 1C210.c.

2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.N.B.Note 1:Note 2:Note 3:1A006N.B.Note:1A007N.B. Technical Note: 1A0081A1021A202N.B.1A225 Technical Note: 1A226

a.

Made of phosphor bronze mesh chemically treated to improve wettability; and

b.

Designed to be used in vacuum distillation towers.

2:Note 3:Note 4:Note 5:1A003Note:N.B.1A004N.B. Technical Notes: 1.2.3.1A005N.B.N.B.Note 1:Note 2:Note 3:1A006N.B.Note:1A007N.B. Technical Note: 1A0081A1021A202N.B.1A225 Technical Note: 1A2261A227

a.

A 'cold area' greater than 0,09 m2;

b.

A density greater than 3 g/cm3; and

c.

A thickness of 100 mm or greater.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B2321B2331B234N.B.1B235 Technical Note:

Test, Inspection and Production Equipment Equipment designed for the production of composite structures or laminates or fibrous or filamentary materials, as follows, and specially designed components and accessories therefor: SEE ALSO 1B101 AND 1B201. For the purpose of 1B001: Equipment designed to produce metal alloy powder or particulate materials, and having all of the following: SEE ALSO 1B102. Tools, dies, moulds or fixtures, for superplastic forming or diffusion bonding titanium, aluminium or their alloys, specially designed for the manufacture of any of the following: Equipment, other than that specified in 1B001, for the production of structural composites as follows; and specially designed components and accessories therefor: SEE ALSO 1B201. Components and accessories specified in 1B101 include moulds, mandrels, dies, fixtures and tooling for the preform pressing, curing, casting, sintering or bonding of composite structures, laminates and manufactures thereof. Metal powder production equipment, other than that specified in 1B002, and components as follows: SEE ALSO 1B115.b. 1B102 includes: Equipment, other than that specified in 1B002 or 1B102, for the production of propellant and propellant constituents, as follows, and specially designed components therefor: For equipment specially designed for the production of military goods, see the Military Goods Controls. 1B115 does not control equipment for the production, handling and acceptance testing of boron carbide. Specially designed nozzles for producing pyrolitically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. Batch mixers having all of the following, and specially designed components therefor: In 1B117.d. the term 'mixing/kneading shaft' does not refer to deagglomerators or knife-spindles. Continuous mixers having all of the following, and specially designed components therefor: Fluid energy mills usable for grinding or milling substances specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls, and specially designed components therefor. Filament winding machines, other than those specified in 1B001 or 1B101, and related equipment, as follows: Electrolytic cells for fluorine production with an output capacity greater than 250 g of fluorine per hour. Electromagnetic isotope separators designed for, or equipped with, single or multiple ion sources capable of providing a total ion beam current of 50 mA or greater. 1B226 includes separators: Hydrogen-cryogenic distillation columns having all of the following characteristics: In 1B228 'effective length' means the active height of packing material in a packed-type column, or the active height of internal contactor plates in a plate-type column. Equivalent materials could include, but are not limited to the following materials: Pumps capable of circulating solutions of concentrated or dilute potassium amide catalyst in liquid ammonia (KNH2/NH3), having all of the following characteristics: Tritium facilities or plants, and equipment therefor, as follows: Turboexpanders or turboexpander-compressor sets having both of the following characteristics: Lithium isotope separation facilities or plants, and systems and equipment therefor, as follows: High explosive containment vessels, chambers, containers and other similar containment devices designed for the testing of high explosives or explosive devices and having both of the following characteristics: SEE ALSO MILITARY GOODS CONTROLS. Target assemblies and components for the production of tritium as follows: Components specially designed for target assemblies for the production of tritium may include lithium pellets, tritium getters, and specially-coated cladding.

1B1B001N.B. a.

Filament winding machines, of which the motions for positioning, wrapping and winding fibres are coordinated and programmed in three or more 'primary servo positioning' axes, specially designed for the manufacture of composite structures or laminates, from fibrous or filamentary materials;

b.Note: Technical Note:

'Tape-laying machines', of which the motions for positioning and laying tape are coordinated and programmed in five or more 'primary servo positioning' axes, specially designed for the manufacture of composite airframe or 'missile' structures; In 1B001.b., 'missile' means complete rocket systems and unmanned aerial vehicle systems. For the purposes of 1B001.b., 'tape-laying machines' have the ability to lay one or more 'filament bands' limited to widths greater than 25,4 mm and less than or equal to 304,8 mm, and to cut and restart individual 'filament band' courses during the laying process.

c. Technical Note:

Multidirectional, multidimensional weaving machines or interlacing machines, including adapters and modification kits, specially designed or modified for weaving, interlacing or braiding fibres, for composite structures; For the purposes of 1B001.c., the technique of interlacing includes knitting.

Equipment specially designed or modified for the production of fibrous or filamentary materials specified by 1C010, as follows:

1. Equipment for converting polymeric fibres (such as polyacrylonitrile, rayon, pitch or polycarbosilane) into carbon fibres or silicon carbide fibres, including special equipment to strain the fibre during heating;

2. Equipment for the chemical vapour deposition of elements or compounds, on heated filamentary substrates, to manufacture silicon carbide fibres;

3. Equipment for the wet-spinning of refractory ceramics (such as aluminium oxide);

4. Equipment for converting aluminium containing precursor fibres into alumina fibres by heat treatment;

e. Technical Note

Equipment specially designed or modified for the production of prepregs by the 'hot melt method'; For the purposes of 1B001.e., the 'hot melt method' is the process of applying pressure and heat to impregnate fibrous or filamentary materials with resin that has been pre-laminated onto a carrier substrate, such as film or paper.

Non-destructive inspection equipment specially designed for composite materials, as follows:

1. X-ray tomography systems for three dimensional defect inspection;

2. Numerically controlled ultrasonic testing machines of which the motions for positioning transmitters or receivers are simultaneously coordinated and programmed in four or more axes to follow the three dimensional contours of the component under inspection;

g. Technical Note:

'Tow-placement machines', of which the motions for positioning and laying tows are coordinated and programmed in two or more 'primary servo positioning' axes, specially designed for the manufacture of composite airframe or 'missile' structures. For the purposes of 1B001.g., 'tow-placement machines' have the ability to place one or more 'filament bands' having widths less than or equal to 25,4 mm, and to cut and restart individual 'filament band' courses during the placement process.

1B1B001N.B. Technical Notes:

1. 'Primary servo positioning' axes control, under computer program direction, is the positioning of the end effector (i.e., head) in space relative to the work piece at the correct orientation and direction to achieve the desired process.

2. A 'filament band' is a single continuous width of fully or partially resin-impregnated tape, tow or fibre. Fully or partially resin-impregnated 'filament bands' include those coated with dry powder that tacks upon heating.

1B1B001N.B. Technical Notes: 1B002 a.

Specially designed to avoid contamination; and

Specially designed for use in one of the processes specified in 1C002.c.2.

1B1B001N.B. Technical Notes: 1B002N.B.1B003 a.

Airframe or aerospace structures;

Aircraft or aerospace engines; or

Specially designed components for structures specified in 1B003.a. or for engines specified in 1B003.b.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note: a.

Filament winding machines or fibre placement machines, of which the motions for positioning, wrapping and winding fibres can be coordinated and programmed in three or more axes, designed to fabricate composite structures or laminates from fibrous or filamentary materials, and coordinating and programming controls;

Tape-laying machines of which the motions for positioning and laying tape and sheets can be coordinated and programmed in two or more axes, designed for the manufacture of composite airframe and missile structures;

Equipment designed or modified for the production of fibrous or filamentary materials as follows:

1. Equipment for converting polymeric fibres (such as polyacrylonitrile, rayon or polycarbosilane) including special provision to strain the fibre during heating;

2. Equipment for the vapour deposition of elements or compounds on heated filament substrates;

3. Equipment for the wet-spinning of refractory ceramics (such as aluminium oxide);

d.Note:

Equipment designed or modified for special fibre surface treatment or for producing prepregs and preforms specified in entry 9C110. 1B101.d. includes rollers, tension stretchers, coating equipment, cutting equipment and clicker dies.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B. a.

Metal powder production equipment usable for the production, in a controlled environment, of spherical, spheroidal or atomised materials specified in 1C011.a., 1C011.b., 1C111.a.1., 1C111.a.2. or in the Military Goods Controls.

Specially designed components for production equipment specified in 1B002 or 1B102.a.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note: a.

Plasma generators (high frequency arc-jet) usable for obtaining sputtered or spherical metallic powders with organization of the process in an argon-water environment;

Electroburst equipment usable for obtaining sputtered or spherical metallic powders with organization of the process in an argon-water environment;

Equipment usable for the production of spherical aluminium powders by powdering a melt in an inert medium (e.g. nitrogen).

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115 a.

Production equipment for the production, handling or acceptance testing of liquid propellants or propellant constituents specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls;

b.Note:

Production equipment for the production, handling, mixing, curing, casting, pressing, machining, extruding or acceptance testing of solid propellants or propellant constituents specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls. 1B115.b. does not control batch mixers, continuous mixers or fluid energy mills. For the control of batch mixers, continuous mixers and fluid energy mills see 1B117, 1B118 and 1B119.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117 a.

Designed or modified for mixing under vacuum in the range of zero to 13,326 kPa:

Capable of controlling the temperature of the mixing chamber;

A total volumetric capacity of 110 litres or more; and

At least one 'mixing/kneading shaft' mounted off centre.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B118 a.

Designed or modified for mixing under vacuum in the range of zero to 13,326 kPa;

Capable of controlling the temperature of the mixing chamber;

any of the following:

1. Two or more mixing/kneading shafts; or

2. All of the following:

2. a.

A single rotating and oscillating shaft with kneading teeth/pins; and

Kneading teeth/pins inside the casing of the mixing chamber.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B201 a.

Filament winding machines having all of the following characteristics:

1. Having motions for positioning, wrapping, and winding fibres coordinated and programmed in two or more axes;

2. Specially designed to fabricate composite structures or laminates from fibrous or filamentary materials; and

3. Capable of winding cylindrical tubes with an internal diameter between 75 and 650 mm and lengths of 300 mm or greater;

Coordinating and programming controls for the filament winding machines specified in 1B201.a.;

Precision mandrels for the filament winding machines specified in 1B201.a.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note: a.

Capable of enriching stable isotopes;

With the ion sources and collectors both in the magnetic field and those configurations in which they are external to the field.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 a.

Designed for operation with internal temperatures in the range of 15 K (-258 °C) to 35 K (-238 °C);

Designed for operation at internal pressures in the range of 0,1 MPa to 1 MPa;

Constructed of either:

1. Austenitic stainless steel; or

2. Equivalent materials which are both cryogenic and hydrogen (H2)-compatible between 15 K (-258 °C) and 35 K (-238 °C); and

With internal diameters of 30 cm or greater and 'effective lengths' of 4 m or greater.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: a.

aluminium,

aluminium alloys,

copper alloys,

nickel alloys, and

titanium alloys.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B230 a.

Airtight (i.e., hermetically sealed);

A capacity greater than 8,5 m3/h; and

Either of the following characteristics:

1. For concentrated potassium amide solutions (1 % or greater), an operating pressure of 1,5 to 60 MPa; or

2. For dilute potassium amide solutions (less than 1 %), an operating pressure of 20 to 60 MPa.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B231 a.

Facilities or plants for the production, recovery, extraction, concentration, or handling of tritium;

Equipment for tritium facilities or plants, as follows:

1. Hydrogen or helium refrigeration units capable of cooling to 23 K (-250 °C) or less, with heat removal capacity greater than 150 W;

2. Hydrogen isotope storage or hydrogen isotope purification systems using metal hydrides as the storage or purification medium.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B232 a.

Designed for operation with an outlet temperature of 35 K (-238 °C) or less; and

Designed for a throughput of hydrogen gas of 1000 kg/h or greater.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B2321B233 a.

Facilities or plants for the separation of lithium isotopes;

Equipment for the separation of lithium isotopes based on the lithium-mercury amalgam process, as follows:

1. Packed liquid-liquid exchange columns specially designed for lithium amalgams;

2. Mercury or lithium amalgam pumps;

3. Lithium amalgam electrolysis cells;

4. Evaporators for concentrated lithium hydroxide solution;

Ion exchange systems specially designed for lithium isotope separation, and specially designed components therefor;

Chemical exchange systems (employing crown ethers, cryptands, or lariat ethers), specially designed for lithium isotope separation, and specially designed components therefor.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B2321B2331B234N.B. a.

Designed to fully contain an explosion equivalent to 2 kg of trinitrotoluene (TNT) or greater; and

Having design elements or features enabling real time or delayed transfer of diagnostic or measurement information.

1B1B001N.B. Technical Notes: 1B002N.B.1B0031B101N.B.Note:1B102N.B.Note:1B115Note 1:Note 2:1B1161B117Note:1B1181B1191B2011B2251B226Note:1B228 Technical Note 1: Technical Note 2: 1B2301B2311B2321B2331B234N.B.1B235 a.

Target assemblies made of or containing lithium enriched in the lithium-6 isotope specially designed for the production of tritium through irradiation, including insertion in a nuclear reactor;

Components specially designed for the target assemblies specified in 1B235.a.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 Technical Notes: 1.2.3.Note 1:Note 2:1C3541C450N.B.1C513 Technical Notes:

Materials Metals and alloys: Unless provision to the contrary is made, the words 'metals' and 'alloys' in 1C001 to 1C012 cover crude and semi-fabricated forms, as follows: Crude forms: Anodes, balls, bars (including notched bars and wire bars), billets, blocks, blooms, brickets, cakes, cathodes, crystals, cubes, dice, grains, granules, ingots, lumps, pellets, pigs, powder, rondelles, shot, slabs, slugs, sponge, sticks; Semi-fabricated forms (whether or not coated, plated, drilled or punched): The object of the control should not be defeated by the export of non-listed forms alleged to be finished products but representing in reality crude forms or semi-fabricated forms. Materials specially designed for absorbing electromagnetic radiation, or intrinsically conductive polymers, as follows: SEE ALSO 1C101. Metal alloys, metal alloy powder and alloyed materials, as follows: SEE ALSO 1C202. 1C002 does not control metal alloys, metal alloy powder and alloyed materials, specially formulated for coating purposes. For the purposes of 1C002, metal alloys are those containing a higher percentage by weight of the stated metal than of any other element. For the purposes of 1C002: Magnetic metals, of all types and of whatever form, having any of the following: Uranium titanium alloys or tungsten alloys with a matrix based on iron, nickel or copper, having all of the following: Superconductive composite conductors in lengths exceeding 100 m or with a mass exceeding 100 g, as follows: For the purposes of 1C005 'filaments' may be in wire, cylinder, film, tape or ribbon form. Fluids and lubricating materials, as follows: Ceramic powders, ceramic-matrix composite materials and 'precursor materials', as follows: SEE ALSO 1C107. For the purposes of 1C007, 'precursor materials' are special purpose polymeric or metallo-organic materials used for the production of silicon carbide, silicon nitride, or ceramics with silicon, carbon and nitrogen. Non-fluorinated polymeric substances as follows: For the purposes of 1C008.a.2. thermoplastic materials, 1C008.a.4. materials and 1C008.f. materials, the 'glass transition temperature (Tg)' is determined using the method described in ISO 11357-2:1999 or national equivalents For the purposes of 1C008.a.2. thermosetting materials and 1C008.a.3. materials, the 'glass transition temperature (Tg)' is determined using the 3-point bend method described in ASTM D 7028-07 or equivalent national standard. The test is to be performed using a dry test specimen which has attained a minimum of 90 % degree of cure as specified by ASTM E 2160-04 or equivalent national standard, and was cured using the combination of standard- and post-cure processes that yield the highest Tg. Unprocessed fluorinated compounds as follows: Fibrous or filamentary materials, as follows: SEE ALSO 1C210 AND 9C110. For the purposes of calculating specific tensile strength, specific modulus or specific weight of fibrous or filamentary materials in 1C010.a., 1C010.b., 1C010.c. or 1C010.e.1.b., the tensile strength and modulus should be determined by using Method A described in ISO 10618:2004 or national equivalents. For the purposes of assessing the specific tensile strength, specific modulus or specific weight of non-unidirectional fibrous or filamentary materials (e.g., fabrics, random mats or braids) in 1C010, this is to be based on the mechanical properties of the constituent unidirectional monofilaments (e.g., monofilaments, yarns, rovings or tows) prior to processing into the non-unidirectional fibrous or filamentary materials. Metals and compounds, as follows: SEE ALSO MILITARY GOODS CONTROLS AND 1C111. For metal powders mixed with other substances to form a mixture formulated for military purposes, see Military Goods Controls. Materials as follows: For the purposes of 1C012., these materials are typically used for nuclear heat sources. Materials and devices for reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures, other than those specified in 1C001, usable in 'missiles', missile subsystems or unmanned aerial vehicles specified in 9A012 or 9A112.a. 1C101 includes: 1C101 does not include coatings when specially used for the thermal control of satellites. In 1C101 'missile' means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. Resaturated pyrolised carbon-carbon materials designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. Graphite and ceramic materials, other than those specified in 1C007, as follows: Propellants and constituent chemicals for propellants, other than those specified in 1C011, as follows: For propellants and constituent chemicals for propellants not specified in 1C111, see the Military Goods Controls. Maraging steels, useable in 'missiles', having all of the following: SEE ALSO 1C216. Maraging steels are iron alloys: In 1C116 'missile' means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. Materials for the fabrication of 'missiles' components as follows: In 1C117 'missile' means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. Titanium-stabilised duplex stainless steel (Ti-DSS) having all of the following: Alloys, other than those specified in 1C002.b.3. or .b.4., as follows: The phrase alloys 'capable of' encompasses alloys before or after heat treatment. 'Fibrous or filamentary materials' or prepregs, other than those specified in 1C010.a., .b. or .e., as follows: Maraging steel, other than that specified in 1C116, 'capable of' an ultimate tensile strength of 1950 MPa or more, at 293 K (20 °C). 1C216 does not control forms in which all linear dimensions are 75 mm or less. The phrase maraging steel 'capable of' encompasses maraging steel before or after heat treatment. Calcium having both of the following characteristics: Magnesium having both of the following characteristics: Bismuth having both of the following characteristics: Beryllium metal, alloys containing more than 50 % beryllium by weight, beryllium compounds, manufactures thereof, and waste or scrap of any of the foregoing, other than that specified in the Military Goods Controls. SEE ALSO MILITARY GOODS CONTROLS. 1C230 does not control the following: Hafnium metal, alloys containing more than 60 % hafnium by weight, hafnium compounds containing more than 60 % hafnium by weight, manufactures thereof, and waste or scrap of any of the foregoing. Helium-3 (3He), mixtures containing helium-3, and products or devices containing any of the foregoing. 1C232 does not control a product or device containing less than 1 g of helium-3. Lithium enriched in the lithium-6 (6Li) isotope to greater than its natural isotopic abundance, and products or devices containing enriched lithium, as follows: elemental lithium, alloys, compounds, mixtures containing lithium, manufactures thereof, waste or scrap of any of the foregoing. 1C233 does not control thermoluminescent dosimeters. The natural isotopic abundance of lithium-6 is approximately 6,5 weight per cent (7,5 atom per cent). Zirconium with a hafnium content of less than 1 part hafnium to 500 parts zirconium by weight, as follows: metal, alloys containing more than 50 % zirconium by weight, compounds, manufactures thereof, waste or scrap of any of the foregoing, other than those specified in 0A001.f. 1C234 does not control zirconium in the form of foil having a thickness of 0,10 mm or less. Tritium, tritium compounds, mixtures containing tritium in which the ratio of tritium to hydrogen atoms exceeds 1 part in 1000, and products or devices containing any of the foregoing. 1C235 does not control a product or device containing less than 1,48 × 103 GBq (40 Ci) of tritium. 'Radionuclides' appropriate for making neutron sources based on alpha-n reaction, other than those specified in 0C001 and 1C012.a., in the following forms: 1C236 does not control a product or device containing less than 3,7 GBq (100 millicuries) of activity. In 1C236 'radionuclides' are any of the following: Radium-226 (226Ra), radium-226 alloys, radium-226 compounds, mixtures containing radium-226, manufactures thereof, and products or devices containing any of the foregoing. 1C237 does not control the following: Chlorine trifluoride (ClF3). High explosives, other than those specified in the Military Goods Controls, or substances or mixtures containing more than 2 % by weight thereof, with a crystal density greater than 1,8 g/cm3 and having a detonation velocity greater than 8000 m/s. Nickel powder and porous nickel metal, other than those specified in 0C005, as follows: 1C240 does not control the following: 1C240.b. refers to porous metal formed by compacting and sintering the materials in 1C240.a. to form a metal material with fine pores interconnected throughout the structure. Rhenium, and alloys containing 90 % by weight or more rhenium; and alloys of rhenium and tungsten containing 90 % by weight or more of any combination of rhenium and tungsten, other than those specified in 1C226, having both of the following characteristics: Chemicals, which may be used as precursors for toxic chemical agents, as follows, and chemical mixtures containing one or more thereof: SEE ALSO MILITARY GOODS CONTROLS AND 1C450. For exports to States not Party to the Chemical Weapons Convention, 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350.1, .3, .5, .11, .12, .13, .17, .18, .21, .22, .26, .27, .28, .31, .32, .33, .34, .35, .36, .54, .55, .56, .57, .63 and .65 in which no individually specified chemical constitutes more than 10 % by the weight of the mixture. For exports to States Party to the Chemical Weapons Convention, 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350.1, .3, .5, .11, .12, .13, .17, .18, .21, .22, .26, .27, .28, .31, .32, .33, .34, .35, .36, .54, .55, .56, .57, .63 and .65 in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C350 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C350.2, .6, .7, .8, .9, .10, .14, .15, .16, .19, .20, .24, .25, .30, .37, .38, .39, .40, .41, .42, .43, .44, .45, .46, .47, .48, .49, .50, .51, .52, .53, .58, .59, .60, .61, .62, .64, .66, .67, .68, .69, .70, .71, .72, .73, .74, .75, .76, .77, .78, .79, .80, .81, .82, .83, .84, .85, .86, .87, .88, .89 and .90 in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C350 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use. Human and animal pathogens and toxins, as follows: 1C351 does not control vaccines or immunotoxins. 'Genetic elements' and 'genetically-modified organisms', as follows: 'Genetically-modified organisms' include organisms in which the nucleic acid sequences have been created or altered by deliberate molecular manipulation. 'Genetic elements' include inter alia chromosomes, genomes, plasmids, transposons, vectors and inactivated organisms containing recoverable nucleic acid fragments, whether genetically modified or unmodified, or chemically synthesised in whole or in part. For the purposes of the genetic elements control, nucleic acids from an inactivated organism, virus, or sample are considered recoverable if the inactivation and preparation of the material is intended or known to facilitate isolation, purification, amplification, detection, or identification of nucleic acids. 'Endow or enhance pathogenicity' is defined as when the insertion or integration of the nucleic acid sequence or sequences is/are likely to enable or increase a recipient organism’s ability to be used to deliberately cause disease or death. This might include alterations to, inter alia: virulence, transmissibility, stability, route of infection, host range, reproducibility, ability to evade or suppress host immunity, resistance to medical countermeasures, or detectability. 1C353 does not control nucleic acid sequences of shiga toxin producing Escherichia coli of serogroups O26, O45, O103, O104, O111, O121, O145, O157, and other shiga toxin producing serogroups, other than those genetic elements coding for shiga toxin, or for its subunits. 1C353 does not control vaccines. Plant pathogens, as follows: Toxic chemicals and toxic chemical precursors, as follows, and chemical mixtures containing one or more thereof: SEE ALSO ENTRY 1C350, 1C351.d. AND MILITARY GOODS CONTROLS. 'High-entropy alloy' or refractory metal and alloy powders, not specified in 1C002, having a surface modified with 'inoculants'. For the purposes of 1C513.:

1C Technical Note: a.

Wrought or worked materials fabricated by rolling, drawing, extruding, forging, impact extruding, pressing, graining, atomising, and grinding, i.e., angles, channels, circles, discs, dust, flakes, foils and leaf, forging, plate, powder, pressings and stampings, ribbons, rings, rods (including bare welding rods, wire rods, and rolled wire), sections, shapes, sheets, strip, pipe and tubes (including tube rounds, squares, and hollows), drawn or extruded wire;

Cast material produced by casting in sand, die, metal, plaster or other types of moulds, including high pressure castings, sintered forms, and forms made by powder metallurgy.

1C Technical Note: 1C001N.B.

a.Note 1:Note 2:

Materials for absorbing frequencies exceeding 2 × 108 Hz but less than 3 × 1012 Hz; 1C001.a. does not control: Nothing in Note 1 to 1C001.a. releases magnetic materials to provide absorption when contained in paint.

a.Note 1: a.

Hair type absorbers, constructed of natural or synthetic fibres, with non-magnetic loading to provide absorption;

Absorbers having no magnetic loss and whose incident surface is non-planar in shape, including pyramids, cones, wedges and convoluted surfaces;

Planar absorbers, having all of the following:

1. Technical Note:

Made from any of the following: For the purposes of 1C001.a. Note: 1.c.1., absorption test samples should be a square at least 5 wavelengths of the centre frequency on a side and positioned in the far field of the radiating element.

1. a.

Plastic foam materials (flexible or non-flexible) with carbon-loading, or organic materials, including binders, providing more than 5 % echo compared with metal over a bandwidth exceeding ±15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 450 K (177 °C); or

Ceramic materials providing more than 20 % echo compared with metal over a bandwidth exceeding ±15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 800 K (527 °C);

2. Tensile strength less than 7 × 106 N/m2; and

3. Compressive strength less than 14 × 106 N/m2;

Planar absorbers made of sintered ferrite, having all of the following:

1. A specific gravity exceeding 4,4; and

2. A maximum operating temperature of 548 K (275 °C) or less;

Planar absorbers having no magnetic loss and fabricated from 'open-cell foam' plastic material with a density of 0,15 g/cm3 or less.

Technical Note:

For the purposes of 1C001.a. Note 1.e., 'open-cell foams' are flexible and porous materials, having an inner structure open to the atmosphere. 'Open-cell foams' are also known as reticulated foams.

b.Note:

Materials not transparent to visible light and specially designed for absorbing near-infrared radiation having a wavelength exceeding 810 nm but less than 2000 nm (frequencies exceeding 150 THz but less than 370 THz); 1C001.b. does not control materials specially designed or formulated for any of the following applications:

a.

Laser marking of polymers; or

b.

Laser welding of polymers.

c.Note: Technical Note:

Intrinsically conductive polymeric materials with a 'bulk electrical conductivity' exceeding 10000 S/m (Siemens per metre) or a 'sheet (surface) resistivity' of less than 100 ohms/square, based on any of the following polymers: 1C001.c. does not control materials in a liquid form. For the purposes of 1C001.c., 'bulk electrical conductivity' and 'sheet (surface) resistivity' should be determined using ASTM D-257 or national equivalents.

1. Polyaniline;

2. Polypyrrole;

3. Polythiophene;

4. Poly phenylene-vinylene; or

5. Poly thienylene-vinylene.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: a.

Aluminides, as follows:

1. Nickel aluminides containing a minimum of 15 % by weight aluminium, a maximum of 38 % by weight aluminium and at least one additional alloying element;

2. Titanium aluminides containing 10 % by weight or more aluminium and at least one additional alloying element;

b. Technical Notes: 1.2.

Metal alloys, as follows, made from the powder or particulate material specified in 1C002.c.: For the purposes of 1C002.b.: 'Stress-rupture life' should be measured in accordance with ASTM standard E-139 or national equivalents. 'Low cycle fatigue life' should be measured in accordance with ASTM Standard E-606 'Recommended Practice for Constant-Amplitude Low-Cycle Fatigue Testing' or national equivalents. Testing should be axial with an average stress ratio equal to 1 and a stress-concentration factor (Kt) equal to 1. The average stress ratio is defined as maximum stress minus minimum stress divided by maximum stress.

1. Nickel alloys having any of the following:

1. a.

A 'stress-rupture life' of 10000 hours or longer at 923 K (650 °C) at a stress of 676 MPa; or

A 'low cycle fatigue life' of 10000 cycles or more at 823 K (550 °C) at a maximum stress of 1095 MPa;

2. Niobium alloys having any of the following:

2. a.

A 'stress-rupture life' of 10000 hours or longer at 1073 K (800 °C) at a stress of 400 MPa; or

A 'low cycle fatigue life' of 10000 cycles or more at 973 K (700 °C) at a maximum stress of 700 MPa;

3. Titanium alloys having any of the following:

3. a.

A 'stress-rupture life' of 10000 hours or longer at 723 K (450 °C) at a stress of 200 MPa; or

A 'low cycle fatigue life' of 10000 cycles or more at 723 K (450 °C) at a maximum stress of 400 MPa;

4. Aluminium alloys having any of the following:

4. a.

A tensile strength of 240 MPa or more at 473 K (200 °C); or

A tensile strength of 415 MPa or more at 298 K (25 °C);

5. Magnesium alloys having all of the following:

5. a.

A tensile strength of 345 MPa or more; and

A corrosion rate of less than 1 mm/year in 3 % sodium chloride aqueous solution measured in accordance with ASTM standard G-31 or national equivalents;

Metal alloy powder or particulate material, having all of the following:

1. Technical Note:

Made from any of the following composition systems: For the purposes of 1C002.c.1., X equals one or more alloying elements.

a.Note:

Nickel alloys (Ni-Al-X, Ni-X-Al) qualified for turbine engine parts or components, i.e., with less than 3 non-metallic particles (introduced during the manufacturing process) larger than 100 μm in 109 alloy particles; 1C002.c.1.a. includes nickel alloys qualified for aero, aero-derivative, industrial or marine gas turbine engines.

Niobium alloys (Nb-Al-X or Nb-X-Al, Nb-Si-X or Nb-X-Si, Nb-Ti-X or Nb-X-Ti);

Titanium alloys (Ti-Al-X or Ti-X-Al);

Aluminium alloys (Al-Mg-X or Al-X-Mg, Al-Zn-X or Al-X-Zn, Al-Fe-X or Al-X-Fe); or

Magnesium alloys (Mg-Al-X or Mg-X-Al);

2. Made in a controlled environment by any of the following processes:

2. a.

'Vacuum atomisation';

'Gas atomisation';

'Rotary atomisation';

'Splat quenching';

'Melt spinning' and 'comminution';

'Melt extraction' and 'comminution';

'Mechanical alloying';

'Plasma atomisation'; or

'Ultrasonic atomisation'; and

3. Capable of forming materials specified in 1C002.a. or 1C002.b.;

Alloyed materials having all of the following:

1. Made from any of the composition systems specified in 1C002.c.1.;

2. In the form of uncomminuted flakes, ribbons or thin rods; and

3. Produced in a controlled environment by any of the following:

3. a.

'Splat quenching';

'Melt spinning'; or

'Melt extraction'.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes:

1. 'Vacuum atomisation' is a process to reduce a molten stream of metal to droplets of a diameter of 500 μm or less by the rapid evolution of a dissolved gas upon exposure to a vacuum.

2. 'Gas atomisation' is a process to reduce a molten stream of metal alloy to droplets of 500 μm diameter or less by a high pressure gas stream.

3. 'Rotary atomisation' is a process to reduce a stream or pool of molten metal to droplets to a diameter of 500 μm or less by centrifugal force.

4. 'Splat quenching' is a process to 'solidify rapidly' a molten metal stream impinging upon a chilled block, forming a flake-like product.

5. 'Melt spinning' is a process to 'solidify rapidly' a molten metal stream impinging upon a rotating chilled block, forming a flake, ribbon or rod-like product.

6. 'Comminution' is a process to reduce a material to particles by crushing or grinding.

7. 'Melt extraction' is a process to 'solidify rapidly' and extract a ribbon-like alloy product by the insertion of a short segment of a rotating chilled block into a bath of a molten metal alloy.

8. 'Mechanical alloying' is an alloying process resulting from the bonding, fracturing and rebonding of elemental and master alloy powders by mechanical impact. Non-metallic particles may be incorporated in the alloy by addition of the appropriate powders.

9. 'Plasma atomisation' is a process to reduce a molten stream or solid metal to droplets of 500 μm diameter or less, using plasma torches in an inert gas environment.

10. 'Ultrasonic atomisation' is a process to reduce a molten stream of metal alloy to droplets of 500 μm diameter or less by ultrasonic vibration.

11. For the purposes of 1C002 Technical Notes, 'solidify rapidly' is a process involving the solidification of molten material at cooling rates exceeding 1000 K/s.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C003 a. Technical Note:

Initial relative permeability of 120000 or more and a thickness of 0,05 mm or less; For the purposes of 1C003.a., measurement of initial relative permeability must be performed on fully annealed materials.

Magnetostrictive alloys having any of the following:

1. A saturation magnetostriction of more than 5 × 10-4; or

2. A magnetomechanical coupling factor (k) of more than 0,8; or

c. Technical Note:

Amorphous or 'nanocrystalline' alloy strips, having all of the following: For the purposes of 1C003.c., 'nanocrystalline' materials are those materials having a crystal grain size of 50 nm or less, as determined by X-ray diffraction.

1. A composition having a minimum of 75 % by weight of iron, cobalt or nickel;

2. A saturation magnetic induction (Bs) of 1,6 T or more; and

3. Any of the following:

3. a.

A strip thickness of 0,02 mm or less; or

An electrical resistivity of 2 × 10-4 ohm cm or more.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C004 a.

A density exceeding 17,5 g/cm3;

An elastic limit exceeding 880 MPa;

An ultimate tensile strength exceeding 1270 MPa; and

An elongation exceeding 8 %.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 a.

Superconductive composite conductors containing one or more niobium-titanium 'filaments', having all of the following:

1. Embedded in a matrix other than a copper or copper-based mixed matrix; and

2. Having a cross-section area less than 0,28 × 10-4 mm2 (6 μm in diameter for circular 'filaments');

Superconductive composite conductors consisting of one or more superconductive 'filaments' other than niobium-titanium, having all of the following:

1. A critical temperature at zero magnetic induction exceeding 9,85 K (-263,3 °C); and

2. Remaining in the superconductive state at a temperature of 4,2 K (-268,95 °C) when exposed to a magnetic field oriented in any direction perpendicular to the longitudinal axis of conductor and corresponding to a magnetic induction of 12 T with critical current density exceeding 1750 A/mm2 on overall cross-section of the conductor;

Superconductive composite conductors consisting of one or more superconductive 'filaments' which remain superconductive above 115 K (-158,15 °C).

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C006 a.

Not used;

Lubricating materials containing, as their principal ingredients, phenylene or alkylphenylene ethers or thio-ethers, or their mixtures, containing more than two ether or thio-ether functions or mixtures thereof;

Damping or flotation fluids having all of the following:

1. Purity exceeding 99,8 %;

2. Containing less than 25 particles of 200 μm or larger in size per 100 ml; and

3. Made from at least 85 % of any of the following:

3. a.

Dibromotetrafluoroethane (CAS 25497-30-7, 124-73-2, 27336-23-8);

Polychlorotrifluoroethylene (oily and waxy modifications only); or

Polybromotrifluoroethylene;

d.Note:

Fluorocarbon fluids designed for electronic cooling and having all of the following: 1C006.d. does not control materials specified and packaged as medical products.

1. Containing 85 % by weight or more of any of the following, or mixtures thereof:

1. a.

Monomeric forms of perfluoropolyalkylether-triazines or perfluoroaliphatic-ethers;

Perfluoroalkylamines;

Perfluorocycloalkanes; or

Perfluoroalkanes;

2. Density at 298 K (25 °C) of 1,5 g/ml or more;

3. In a liquid state at 273 K (0 °C); and

4. Containing 60 % or more by weight of fluorine.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. a.

Ceramic powders of titanium diboride (TiB2) (CAS 12045-63-5) having total metallic impurities, excluding intentional additions, of less than 5000 ppm, an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm;

Not used;

Ceramic-matrix composite materials as follows:

1. Ceramic-ceramic composite materials with a glass or oxide-matrix and reinforced with any of the following:

1. a.Note:

Continuous fibres made from any of the following materials: 1C007.c.1.a. does not control composites containing fibres with a tensile strength of less than 700 MPa at 1273 K (1000 °C) or tensile creep resistance of more than 1 % creep strain at 100 MPa load and 1273 K (1000 °C) for 100 hours.

1. Al2O3 (CAS 1344-28-1); or

2. Si-C-N; or

Fibres being all of the following:

1. Made from any of the following materials:

1. a.

Si-N;

Si-C;

Si-Al-O-N; or

Si-O-N; and

2. Having a specific tensile strength exceeding 12,7 × 103 m;

2. Ceramic matrix composite materials, with a matrix formed of carbides or nitrides of silicon, zirconium or boron;

Not used;

'Precursor materials' specially designed for the production of materials specified in 1C007.c., as follows:

1. Polydiorganosilanes;

2. Polysilazanes;

3. Polycarbosilazanes;

Not used.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 a.Note:N.B.

Imides, as follows: 1C008.a. controls substances in liquid or solid fusible form, including resin, powder, pellet, film, sheet, tape or ribbon. For non-fusible aromatic polyimides in film, sheet, tape or ribbon form, see 1A003.

1. Bismaleimides;

2. Aromatic polyamide-imides (PAI) having a 'glass transition temperature (Tg)' exceeding 563 K (290 °C);

3. Aromatic polyimides having a 'glass transition temperature (Tg)' exceeding 505 K (232 °C);

4. Aromatic polyetherimides having a 'glass transition temperature (Tg)' exceeding 563 K (290 °C);

Not used;

Polyarylene ketones;

Polyarylene sulphides, where the arylene group is biphenylene, triphenylene or combinations thereof;

Polybiphenylenethersulphone having a 'glass transition temperature (Tg)' exceeding 563 K (290 °C).

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C009 a.

Not used;

Fluorinated polyimides containing 10 % by weight or more of combined fluorine;

Fluorinated phosphazene elastomers containing 30 % by weight or more of combined fluorine.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2. a.Note:

Organic fibrous or filamentary materials, having all of the following: 1C010.a. does not control polyethylene.

1. Specific modulus exceeding 12,7 × 106 m; and

2. Specific tensile strength exceeding 23,5 × 104 m;

b.Note:

Carbon fibrous or filamentary materials, having all of the following: 1C010.b. does not control:

1. Specific modulus exceeding 14,65 × 106 m; and

2. Specific tensile strength exceeding 26,82 × 104 m;

b.Note:

a.

Fibrous or filamentary materials, for the repair of civil aircraft structures or laminates, having all of the following:

1. An area not exceeding 1 m2;

2. A length not exceeding 2,5 m; and

3. A width exceeding 15 mm;

b.

Mechanically chopped, milled or cut carbon fibrous or filamentary materials 25,0 mm or less in length.

c.Note:

Inorganic fibrous or filamentary materials, having all of the following: 1C010.c. does not control:

1. Having any of the following:

1. a.

Composed of 50 % or more by weight silicon dioxide and having a specific modulus exceeding 2,54 × 106 m; or

Not specified in 1C010.c.1.a. and having a specific modulus exceeding 5,6 × 106 m; and

2. Melting, softening, decomposition or sublimation point exceeding 1922 K (1649 °C) in an inert environment;

c.Note:

a.

Discontinuous, multiphase, polycrystalline alumina fibres in chopped fibre or random mat form, containing 3 % by weight or more silica, with a specific modulus of less than 10 × 106 m;

b.

Molybdenum and molybdenum alloy fibres;

c.

Boron fibres;

d.

Discontinuous ceramic fibres with a melting, softening, decomposition or sublimation point lower than 2043 K (1770 °C) in an inert environment.

d. Technical Note:

Fibrous or filamentary materials, having any of the following: For the purposes of 1C010.d.2., 'commingled' is filament to filament blending of thermoplastic fibres and reinforcement fibres in order to produce a fibre reinforcement matrix mix in total fibre form.

1. Composed of any of the following:

1. a.

Polyetherimides specified in 1C008.a.; or

Materials specified in 1C008.d. to 1C008.f.; or

2. Composed of materials specified in 1C010.d.1.a. or 1C010.d.1.b. and 'commingled' with other fibres specified in 1C010.a., 1C010.b. or 1C010.c.;

Fully or partially resin-impregnated or pitch-impregnated fibrous or filamentary materials (prepregs), metal or carbon-coated fibrous or filamentary materials (preforms) or 'carbon fibre preforms', having all of the following:

1:Note 2 Technical Notes: 1.2.

Having any of the following: Metal or carbon-coated fibrous or filamentary materials (preforms) or 'carbon fibre preforms', not impregnated with resin or pitch, are specified by fibrous or filamentary materials in 1C010.a., 1C010.b. or 1C010.c. 1C010.e. does not control: For the purposes of 1C010.e. and Note 1, 'carbon fibre preforms' are an ordered arrangement of uncoated or coated fibres intended to constitute a framework of a part before the matrix is introduced to form a composite. For the purposes of 1C010.e.2. materials, 'Dynamic Mechanical Analysis glass transition temperature (DMA Tg)' is determined using the method described in ASTM D 7028-07, or equivalent national standard, on a dry test specimen. In the case of thermoset materials, degree of cure of a dry test specimen shall be a minimum of 90 % as defined by ASTM E 2160-04 or equivalent national standard.

1. a.

Inorganic fibrous or filamentary materials specified in 1C010.c.; or

Organic or carbon fibrous or filamentary materials, having all of the following:

1. Specific modulus exceeding 10,15 × 106 m; and

2. Specific tensile strength exceeding 17,7 × 104 m; and

2. Having any of the following:

2. a.

Resin or pitch, specified in 1C008 or 1C009.b.;

'Dynamic Mechanical Analysis glass transition temperature (DMA Tg)' equal to or exceeding 453 K (180oC) and having a phenolic resin; or

'Dynamic Mechanical Analysis glass transition temperature (DMA Tg)' equal to or exceeding 505 K (232oC) and having a resin or pitch, not specified in 1C008 or 1C009.b., and not being a phenolic resin.

1:Note 2: a.

Epoxy resin matrix impregnated carbon fibrous or filamentary materials (prepregs) for the repair of civil aircraft structures or laminates, having all the following:

1. An area not exceeding 1 m2;

2. A length not exceeding 2,5 m; and

3. A width exceeding 15 mm.

Fully or partially resin-impregnated or pitch-impregnated mechanically chopped, milled or cut carbon fibrous or filamentary materials 25,0 mm or less in length when using a resin or pitch other than those specified in 1C008 or 1C009.b.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B. a.Technical Note:Note:

Metals in particle sizes of less than 60 μm whether spherical, atomised, spheroidal, flaked or ground, manufactured from material consisting of 99 % or more of zirconium, magnesium and alloys thereof; For the purposes of 1C011.a., the natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium. The metals or alloys specified in 1C011.a. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium.

b.Note:

Boron or boron alloys, with a particle size of 60 μm or less, as follows: The metals or alloys specified in 1C011.b. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium.

1. Boron with a purity of 85 % by weight or more;

2. Boron alloys with a boron content of 85 % by weight or more;

Guanidine nitrate (CAS 506-93-4);

Nitroguanidine (NQ) (CAS 556-88-7);

Iodine pentafluoride (CAS 7783-66-6).

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: a.Note:

Plutonium in any form with a plutonium isotopic assay of plutonium-238 of more than 50 % by weight; 1C012.a. does not control:

a.

Shipments with a plutonium content of 1 g or less;

b.

Shipments of 3 effective grammes or less when contained in a sensing component in instruments.

b.Note:

Previously separated neptunium-237 in any form. 1C012.b. does not control shipments with a neptunium-237 content of 1 g or less.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1: a.

Structural materials and coatings specially designed for reduced radar reflectivity;

Coatings, including paints, specially designed for reduced or tailored reflectivity or emissivity in the microwave, infrared or ultraviolet regions of the electromagnetic spectrum.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C107 a.N.B.

Fine grain graphites with a bulk density of 1,72 g/cm3 or greater, measured at 288 K (15 °C), and having a grain size of 100 μm or less, usable for rocket nozzles and re-entry vehicle nose tips, which can be machined to any of the following products: See also 0C004.

1. Cylinders having a diameter of 120 mm or greater and a length of 50 mm or greater;

2. Tubes having an inner diameter of 65 mm or greater and a wall thickness of 25 mm or greater and a length of 50 mm or greater; or

3. Blocks having a size of 120 mm × 120 mm × 50 mm or greater;

b.N.B.

Pyrolytic or fibrous reinforced graphites, usable for rocket nozzles and reentry vehicle nose tips usable in missiles, space launch vehicles specified in 9A004 or sounding rockets specified in 9A104; See also 0C004.

Ceramic composite materials (dielectric constant less than 6 at any frequency from 100 MHz to 100 GHz) for use in radomes usable in missiles, space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

Bulk machinable silicon-carbide reinforced unfired ceramic, usable for nose tips usable in missiles, space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

Reinforced silicon-carbide ceramic composites, usable for nose tips, reentry vehicles and nozzle flaps usable in missiles, space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

f.Note: Technical Note 1: Technical Note 2: 1.2.3.4.5.6.7.8.9.10.

Bulk machinable ceramic composite materials consisting of an 'Ultra High Temperature Ceramic (UHTC)' matrix with a melting point equal to or greater than 3000 °C and reinforced with fibres or filaments, usable for missile components (such as nose-tips, re-entry vehicles, leading edges, jet vanes, control surfaces or rocket motor throat inserts) in missiles, space launch vehicles specified in 9A004, sounding rockets specified in 9A104 or 'missiles'. 1C107.f. does not control 'Ultra High Temperature Ceramic (UHTC) ' materials in non-composite form. In 1C107.f. 'missile' means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 'Ultra High Temperature Ceramics (UHTC)' includes: Titanium diboride (TiB2); Zirconium diboride (ZrB2); Niobium diboride (NbB2); Hafnium diboride (HfB2); Tantalum diboride (TaB2); Titanium carbide (TiC); Zirconium carbide (ZrC); Niobium carbide (NbC); Hafnium carbide (HfC); Tantalum carbide (TaC).

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111 a.

Propulsive substances:

1. Technical Note:

Spherical or spheroidal aluminium powder other than that specified in the Military Goods Controls, in particle size of less than 200 μm and an aluminium content of 97 % by weight or more, if at least 10 % of the total weight is made up of particles of less than 63 μm, according to ISO 2591-1:1988 or national equivalents; A particle size of 63 μm (ISO R-565) corresponds to 250 mesh (Tyler) or 230 mesh (ASTM standard E-11).

2.Note: Metal powders, other than that specified in the Military Goods Controls, as follows: 1C111a.2.a. and 1C111a.2.b. controls powder mixtures with a multimodal particle distribution (e.g. mixtures of different grain sizes) if one or more modes are controlled.

2. a. Technical Note:

Metal powders of zirconium, beryllium or magnesium, or alloys of these metals, if at least 90 % of the total particles by particle volume or weight are made up of particles of less than 60 μm (determined by measurement techniques such as using a sieve, laser diffraction or optical scanning), whether spherical, atomised, spheroidal, flaked or ground, consisting 97 % by weight or more of any of the following: The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium.

1. Zirconium;

2. Beryllium; or

3. Magnesium;

Metal powders of either boron or boron alloys with a boron content of 85 % or more by weight, if at least 90 % of the total particles by particle volume or weight are made up of particles of less than 60 μm (determined by measurement techniques such as using a sieve, laser diffraction or optical scanning), whether spherical, atomised, spheroidal, flaked or ground;

3. Oxidiser substances usable in liquid propellant rocket engines as follows:

3. a.

Dinitrogen trioxide (CAS 10544-73-7);

Nitrogen dioxide (CAS 10102-44-0)/dinitrogen tetroxide (CAS 10544-72-6);

Dinitrogen pentoxide (CAS 10102-03-1);

d. Technical Note:

Mixed Oxides of Nitrogen (MON); Mixed Oxides of Nitrogen (MON) are solutions of Nitric Oxide (NO) in Dinitrogen Tetroxide/Nitrogen Dioxide (N2O4/NO2 ) that can be used in missile systems. There are a range of compositions that can be denoted as MONi or MONij, where i and j are integers representing the percentage of Nitric Oxide in the mixture (e.g., MON3 contains 3 % Nitric Oxide, MON25 25 % Nitric Oxide. An upper limit is MON40, 40 % by weight).

SEE MILITARY GOODS CONTROLS FOR Inhibited Red Fuming Nitric Acid (IRFNA);

SEE MILITARY GOODS CONTROLS AND 1C238 FOR compounds composed of fluorine and one or more of other halogens, oxygen or nitrogen.

4.N.B. Hydrazine derivatives as follows: SEE ALSO MILITARY GOODS CONTROLS.

4.N.B. a.

Trimethylhydrazine (CAS 1741-01-1);

Tetramethylhydrazine (CAS 6415-12-9);

N,N-Diallylhydrazine (CAS 5164-11-4);

Allylhydrazine (CAS 7422-78-8);

Ethylene dihydrazine (CAS 6068-98-0);

Monomethylhydrazine dinitrate;

Unsymmetrical dimethylhydrazine nitrate;

Hydrazinium azide (CAS 14546-44-2);

1,1-Dimethylhydrazinium azide (CAS 227955-52-4) / 1,2-Dimethylhydrazinium azide (CAS 299177-50-7);

Hydrazinium dinitrate (CAS 13464-98-7);

Diimido oxalic acid dihydrazine (CAS 3457-37-2);

2-hydroxyethylhydrazine nitrate (HEHN);

See Military Goods Controls for Hydrazinium perchlorate;

Hydrazinium diperchlorate (CAS 13812-39-0);

Methylhydrazine nitrate (MHN) (CAS 29674-96-2);

1,1-Diethylhydrazine nitrate (DEHN) / 1,2-Diethylhydrazine nitrate (DEHN) (CAS 363453-17-2);

3,6-Dihydrazino tetrazine nitrate (1,4-dihydrazine nitrate) (DHTN);

5. Technical Note:

High energy density materials, other than that specified in the Military Goods Controls, usable in 'missiles' or unmanned aerial vehicles specified in 9A012 or 9A112.a.; In 1C111.a.5. 'missile' means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

5. a.

Mixed fuel that incorporate both solid and liquid fuels, such as boron slurry, having a mass-based energy density of 40 × 106 J/kg or greater;

b.Note:

Other high energy density fuels and fuel additives (e.g., cubane, ionic solutions, JP-10) having a volume-based energy density of 37,5 × 109 J/m3 or greater, measured at 20 °C and one atmosphere (101,325 kPa) pressure; 1C111.a.5.b. does not control fossil refined fuels and biofuels produced from vegetables, including fuels for engines certified for use in civil aviation, unless specially formulated for 'missiles' or unmanned aerial vehicles specified in 9A012 or 9A112.a..

6. Hydrazine replacement fuels as follows:

6. a.

2-Dimethylaminoethylazide (DMAZ) (CAS 86147-04-8);

Polymeric substances:

1. Carboxy-terminated polybutadiene (including carboxyl-terminated polybutadiene) (CTPB);

2. Hydroxy-terminated polybutadiene (including hydroxyl-terminated polybutadiene) (HTPB) (CAS 69102-90-5), other than that specified in the Military Goods Controls;

3. Polybutadiene-acrylic acid (PBAA);

4. Polybutadiene-acrylic acid-acrylonitrile (PBAN) (CAS 25265-19-4 / CAS 68891-50-9);

5. Technical Note:

Polytetrahydrofuran polyethylene glycol (TPEG); Polytetrahydrofuran polyethylene glycol (TPEG) is a block co-polymer of poly 1,4-Butanediol (CAS 110-63-4) and polyethylene glycol (PEG) (CAS 25322-68-3).

6. SEE MILITARY GOODS CONTROLS FOR polyglycidyl nitrate (PGN or poly-GLYN) (CAS 27814-48- 8).

Other propellant additives and agents:

1. SEE MILITARY GOODS CONTROLS FOR Carboranes, decaboranes, pentaboranes and derivatives thereof;

2. Triethylene glycol dinitrate (TEGDN) (CAS 111-22-8);

3. 2-Nitrodiphenylamine (CAS 119-75-5);

4. SEE MILITARY GOODS CONTROLS FOR trimethylolethane trinitrate (TMETN) (CAS 3032-55-1);

5. Diethylene glycol dinitrate (DEGDN) (CAS 693-21-0);

6. Ferrocene derivatives as follows:

6. a.

SEE MILITARY GOODS CONTROLS FOR catocene (CAS 37206-42-1);

SEE MILITARY GOODS CONTROLS FOR Ethyl ferrocene (CAS 1273-89-8);

SEE MILITARY GOODS CONTROLS FOR n-Propyl ferrocene (CAS 1273-92-3)/iso-propyl ferrocene (CAS 12126-81-7);

SEE MILITARY GOODS CONTROLS FOR n-butyl ferrocene (CAS 31904-29-7);

SEE MILITARY GOODS CONTROLS FOR Pentyl ferrocene (CAS 1274-00-6);

SEE MILITARY GOODS CONTROLS FOR Dicyclopentyl ferrocene (CAS 125861-17-8);

SEE MILITARY GOODS CONTROLS FOR Dicyclohexyl ferrocene;

SEE MILITARY GOODS CONTROLS FOR Diethyl ferrocene (CAS 1273-97-8);

SEE MILITARY GOODS CONTROLS FOR Dipropyl ferrocene;

SEE MILITARY GOODS CONTROLS FOR Dibutyl ferrocene (CAS 1274-08-4);

SEE MILITARY GOODS CONTROLS FOR Dihexyl ferrocene (CAS 93894-59-8);

SEE MILITARY GOODS CONTROLS FOR Acetyl ferrocene (CAS 1271-55-2) / 1,1'-diacetyl ferrocene (CAS 1273-94-5);

SEE MILITARY GOODS CONTROLS FOR Ferrocene carboxylic acid (CAS 1271-42-7) / 1,1'-Ferrocenedicarboxylic acid (CAS 1293-87-4) ;

SEE MILITARY GOODS CONTROLS FOR butacene (CAS 125856-62-4);

o.Note:

Other ferrocene derivatives usable as rocket propellant burning rate modifiers, other than those specified in the Military Goods Controls. 1C111.c.6.o. does not control ferrocene derivatives that contain a six carbon aromatic functional group attached to the ferrocene molecule.

7. 4,5-Diazidomethyl-2-methyl-1,2,3-triazole (iso-DAMTR), other than that specified in the Military Goods Controls.

d. Technical Notes: 1.2.

'Gel propellants', other than that specified in the Military Goods Controls, specifically formulated for use in 'missiles'. In 1C111.d. a 'gel propellant' is a fuel or oxidiser formulation using a gellant such as silicates, kaolin (clay), carbon or any polymeric gellant. In 1C111.d. a 'missile' means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. a.

Having an ultimate tensile strength, measured at 293 K (20 °C), equal to or greater than:

1. 0,9 GPa in the solution annealed stage; or

2. 1,5 GPa in the precipitation hardened stage; and

Any of the following forms:

1. Sheet, plate or tubing with a wall or plate thickness equal to or less than 5,0 mm;

2. Tubular forms with a wall thickness equal to or less than 50 mm and having an inner diameter equal to or greater than 270 mm.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1:

1. Generally characterised by high nickel content, carbon content of less than or equal to 0,03 % by weight, and the use of substitutional elements or precipitates to produce strengthening and age-hardening of the alloy; and

2. Subjected to heat treatment cycles to facilitate the martensitic transformation process (solution annealed stage) and subsequently age hardened (precipitation hardened stage).

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 a.

Tungsten and alloys in particulate form with a tungsten content of 97 % by weight or more and a particle size of 50 × 10-6 m (50 μm) or less;

Molybdenum and alloys in particulate form with a molybdenum content of 97 % by weight or more and a particle size of 50 × 10-6 m (50 μm) or less;

Tungsten materials in solid form having all of the following:

1. Any of the following material compositions:

1. a.

Tungsten and alloys containing 97 % by weight or more of tungsten;

Copper infiltrated tungsten containing 80 % by weight or more of tungsten; or

Silver infiltrated tungsten containing 80 % by weight or more of tungsten; and

2. Able to be machined to any of the following products:

2. a.

Cylinders having a diameter of 120 mm or greater and a length of 50 mm or greater;

Tubes having an inner diameter of 65 mm or greater and a wall thickness of 25 mm or greater and a length of 50 mm or greater; or

Blocks having a size of 120 mm by 120 mm by 50 mm or greater.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C118 a.

Having all of the following characteristics:

1. Containing 17,0 - 23,0 % by weight of chromium and 4,5 - 7,0 % by weight of nickel;

2. Having a titanium content of greater than 0,10 % by weight; and

3. A ferritic-austenitic microstructure (also referred to as a two-phase microstructure) of which at least 10 % by volume (according to ASTM E-1181-87 or national equivalents) is austenite; and

Having any of the following forms:

1. Ingots or bars having a size of 100 mm or more in each dimension;

2. Sheets having a width of 600 mm or more and a thickness of 3 mm or less; or

3. Tubes having an outer diameter of 600 mm or more and a wall thickness of 3 mm or less.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 a.

Aluminium alloys having both of the following characteristics:

1. 'Capable of' an ultimate tensile strength of 460 MPa or more at 293 K (20 °C); and

2. In the form of tubes or cylindrical solid forms (including forgings) with an outside diameter of more than 75 mm;

Titanium alloys having both of the following characteristics:

1. 'Capable of' an ultimate tensile strength of 900 MPa or more at 293 K (20 °C); and

2. In the form of tubes or cylindrical solid forms (including forgings) with an outside diameter of more than 75 mm.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C210 a.Note:

Carbon or aramid 'fibrous or filamentary materials' having either of the following characteristics: 1C210.a. does not control aramid 'fibrous or filamentary materials' having 0,25 % by weight or more of an ester based fibre surface modifier;

1. A specific modulus of 12,7 × 106 m or greater; or

2. A specific tensile strength of 23,5 × 104 m or greater;

Glass 'fibrous or filamentary materials' having both of the following characteristics:

1. A specific modulus of 3,18 × 106 m or greater; and

2. A specific tensile strength of 7,62 × 104 m or greater;

c. Technical Note: Note:

Thermoset resin impregnated continuous yarns, rovings, tows or tapes with a width of 15 mm or less (prepregs), made from carbon or glass 'fibrous or filamentary materials' specified in 1C210.a. or .b. The resin forms the matrix of the composite. In 1C210, 'fibrous or filamentary materials' is restricted to continuous monofilaments, yarns, rovings, tows or tapes.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note:

1C225Note: Technical Note:

Boron enriched in the boron-10 (10B) isotope to greater than its natural isotopic abundance, as follows: elemental boron, compounds, mixtures containing boron, manufactures thereof, waste or scrap of any of the foregoing. In 1C225 mixtures containing boron include boron loaded materials. The natural isotopic abundance of boron-10 is approximately 18,5 weight per cent (20 atom per cent).

1C226Note: Tungsten, tungsten carbide, and alloys containing more than 90 % tungsten by weight, other than that specified in 1C117, having both of the following characteristics: 1C226 does not control manufactures specially designed as weights or gamma-ray collimators.

1C226 a.

In forms with a hollow cylindrical symmetry (including cylinder segments) with an inside diameter between 100 mm and 300 mm; and

A mass greater than 20 kg.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C227 a.

Containing less than 1000 ppm by weight of metallic impurities other than magnesium; and

Containing less than 10 ppm by weight of boron.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C228 a.

Containing less than 200 ppm by weight of metallic impurities other than calcium; and

Containing less than 10 ppm by weight of boron.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C229 a.

A purity of 99,99 % or greater by weight; and

Containing less than 10 ppm by weight of silver.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note: a.

Metal windows for X-ray machines, or for bore-hole logging devices;

Oxide shapes in fabricated or semi-fabricated forms specially designed for electronic component parts or as substrates for electronic circuits;

Beryl (silicate of beryllium and aluminium) in the form of emeralds or aquamarines.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236 a.

Elemental;

Compounds having a total activity of 37 GBq/kg (1 Ci/kg) or greater;

Mixtures having a total activity of 37 GBq/kg (1 Ci/kg) or greater;

Products or devices containing any of the foregoing.

Actinium-225 (225Ac)

Actinium-227 (227Ac)

Californium-253 (253Cf)

Curium-240 (240Cm)

Curium-241 (241Cm)

Curium-242 (242Cm)

Curium-243 (243Cm)

Curium-244 (244Cm)

Einsteinium-253 (253Es)

Einsteinium-254 (254Es)

Gadolinium-148 (148Gd)

Plutonium-236 (236Pu)

Plutonium-238 (238Pu)

Polonium-208 ( 208Po)

Polonium-209 (209Po)

Polonium-210 (210Po)

Radium-223 (223Ra)

Thorium-227 (227Th)

Thorium-228 (228Th)

Uranium-230 (230U)

Uranium-232 (232U)

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note: a.

Medical applicators;

A product or device containing less than 0,37 GBq (10 millicuries) of radium-226.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240 a.

Nickel powder having both of the following characteristics:

1. A nickel purity content of 99,0 % or greater by weight; and

2. A mean particle size of less than 10 μm measured by American Society for Testing and Materials (ASTM) B330 standard;

Porous nickel metal produced from materials specified in 1C240.a.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: a.

Filamentary nickel powders;

Single porous nickel sheets with an area of 1000 cm2 per sheet or less.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C241 a.

In forms with a hollow cylindrical symmetry (including cylinder segments) with an inside diameter between 100 and 300 mm; and

A mass greater than 20 kg.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.

1. Thiodiglycol (CAS 111-48-8);

2. Phosphorus oxychloride (CAS 10025-87-3);

3. Dimethyl methylphosphonate (CAS 756-79-6);

4. SEE MILITARY GOODS CONTROLS for Methyl phosphonyl difluoride (CAS 676-99-3);

5. Methyl phosphonyl dichloride (CAS 676-97-1);

6. Dimethyl phosphite (DMP) (CAS 868-85-9);

7. Phosphorus trichloride (CAS 7719-12-2);

8. Trimethyl phosphite (TMP) (CAS 121-45-9);

9. Thionyl chloride (CAS 7719-09-7);

10. 3-Hydroxy-1-methylpiperidine (CAS 3554-74-3);

11. N,N-Diisopropyl-(beta)-aminoethyl chloride (CAS 96-79-7);

12. N,N-Diisopropyl-(beta)-aminoethane thiol (CAS 5842-07-9);

13. 3-Quinuclidinol (CAS 1619-34-7);

14. Potassium fluoride (CAS 7789-23-3);

15. 2-Chloroethanol (CAS 107-07-3);

16. Dimethylamine (CAS 124-40-3);

17. Diethyl ethylphosphonate (CAS 78-38-6);

18. Diethyl N,N-dimethylphosphoramidate (CAS 2404-03-7);

19. Diethyl phosphite (CAS 762-04-9);

20. Dimethylamine hydrochloride (CAS 506-59-2);

21. Ethyl phosphinyl dichloride (CAS 1498-40-4);

22. Ethyl phosphonyl dichloride (CAS 1066-50-8);

23. SEE MILITARY GOODS CONTROLS for Ethyl phosphonyl difluoride (CAS 753-98-0);

24. Hydrogen fluoride (CAS 7664-39-3);

25. Methyl benzilate (CAS 76-89-1);

26. Methyl phosphinyl dichloride (CAS 676-83-5);

27. N,N-Diisopropyl-(beta)-amino ethanol (CAS 96-80-0);

28. Pinacolyl alcohol (CAS 464-07-3);

29. SEE MILITARY GOODS CONTROLS for O-Ethyl O-2-diisopropylaminoethyl methylphosphonite (QL) (CAS 57856-11-8);

30. Triethyl phosphite (CAS 122-52-1);

31. Arsenic trichloride (CAS 7784-34-1);

32. Benzilic acid (CAS 76-93-7);

33. Diethyl methylphosphonite (CAS 15715-41-0);

34. Dimethyl ethylphosphonate (CAS 6163-75-3);

35. Ethyl phosphinyl difluoride (CAS 430-78-4);

36. Methyl phosphinyl difluoride (CAS 753-59-3);

37. 3-Quinuclidone (CAS 3731-38-2);

38. Phosphorus pentachloride (CAS 10026-13-8);

39. Pinacolone (CAS 75-97-8);

40. Potassium cyanide (CAS 151-50-8);

41. Potassium bifluoride (CAS 7789-29-9);

42. Ammonium hydrogen fluoride or ammonium bifluoride (CAS 1341-49-7);

43. Sodium fluoride (CAS 7681-49-4);

44. Sodium bifluoride (CAS 1333-83-1);

45. Sodium cyanide (CAS 143-33-9);

46. Triethanolamine (CAS 102-71-6);

47. Phosphorus pentasulphide (CAS 1314-80-3);

48. Di-isopropylamine (CAS 108-18-9);

49. Diethylaminoethanol (CAS 100-37-8);

50. Sodium sulphide (CAS 1313-82-2);

51. Sulphur monochloride (CAS 10025-67-9);

52. Sulphur dichloride (CAS 10545-99-0);

53. Triethanolamine hydrochloride (CAS 637-39-8);

54. N,N-Diisopropyl-(beta)-aminoethyl chloride hydrochloride (CAS 4261-68-1);

55. Methylphosphonic acid (CAS 993-13-5);

56. Diethyl methylphosphonate (CAS 683-08-9);

57. N,N-Dimethylaminophosphoryl dichloride (CAS 677-43-0);

58. Triisopropyl phosphite (CAS 116-17-6);

59. Ethyldiethanolamine (CAS 139-87-7);

60. O,O-Diethyl phosphorothioate (CAS 2465-65-8);

61. O,O-Diethyl phosphorodithioate (CAS 298-06-6);

62. Sodium hexafluorosilicate (CAS 16893-85-9);

63. Methylphosphonothioic dichloride (CAS 676-98-2);

64. Diethylamine (CAS 109-89-7);

65. N,N-Diisopropylaminoethanethiol hydrochloride (CAS 41480-75-5);

66. Methyl dichlorophosphate (CAS 677-24-7);

67. Ethyl dichlorophosphate (CAS 1498-51-7);

68. Methyl difluorophosphate (CAS 22382-13-4);

69. Ethyl difluorophosphate (CAS 460-52-6);

70. Diethyl chlorophosphite (CAS 589-57-1);

71. Methyl chlorofluorophosphate (CAS 754-01-8);

72. Ethyl chlorofluorophosphate (CAS 762-77-6);

73. N,N-Dimethylformamidine (CAS 44205-42-7);

74. N,N-Diethylformamidine (CAS 90324-67-7);

75. N,N-Dipropylformamidine (CAS 48044-20-8);

76. N,N-Diisopropylformamidine (CAS 857522-08-8);

77. N,N-Dimethylacetamidine (CAS 2909-14-0);

78. N,N-Diethylacetamidine (CAS 14277-06-6);

79. N,N-Dipropylacetamidine (CAS 1339586-99-0);

80. N,N-Dimethylpropanamidine (CAS 56776-14-8);

81. N,N-Diethylpropanamidine (CAS 84764-73-8);

82. N,N-Dipropylpropanamidine (CAS 1341496-89-6);

83. N,N-Dimethylbutanamidine (CAS 1340437-35-5);

84. N,N-Diethylbutanamidine (CAS 53510-30-8);

85. N,N-Dipropylbutanamidine (CAS 1342422-35-8);

86. N,N-Diisopropylbutanamidine (CAS 1315467-17-4);

87. N,N-Dimethylisobutanamidine (CAS 321881-25-8);

88. N,N-Diethylisobutanamidine (CAS 1342789-47-2);

89. N,N-Dipropylisobutanamidine (CAS 1342700-45-1);

90. Dipropylamine (CAS 142-84-7).

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351 a.

Viruses, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. African horse sickness virus;

2. African swine fever virus;

3. Andes virus;

4. Avian influenza virus, which are:

4. a.

Uncharacterised; or

Defined in Annex I(2) EC Directive 2005/94/EC (OJ. L.10 14.1.2006 p.16) as having high pathogenicity, as follows:

1. Type A viruses with an IVPI (intravenous pathogenicity index) in 6 week old chickens of greater than 1,2; or

2. Type A viruses of the subtypes H5 or H7 with genome sequences codified for multiple basic amino acids at the cleavage site of the haemagglutinin molecule similar to that observed for other HPAI viruses, indicating that the haemagglutinin molecule can be cleaved by a host ubiquitous protease;

5. Bluetongue virus;

6. Chapare virus;

7. Chikungunya virus;

8. Choclo virus;

9. Crimean-Congo hemorrhagic fever virus;

10. Not used;

11. Dobrava-Belgrade virus;

12. Eastern equine encephalitis virus;

13. Ebolavirus: all members of the Ebolavirus genus;

14. Foot-and-mouth disease virus;

15. Goatpox virus;

16. Guanarito virus;

17. Hantaan virus;

18. Hendra virus (Equine morbillivirus);

19. Suid herpesvirus 1 (Pseudorabies virus; Aujeszky's disease);

20. Classical swine fever virus (Hog cholera virus);

21. Japanese encephalitis virus;

22. Junin virus;

23. Kyasanur Forest disease virus;

24. Laguna Negra virus;

25. Lassa virus;

26. Louping ill virus;

27. Lujo virus;

28. Lumpy skin disease virus;

29. Lymphocytic choriomeningitis virus;

30. Machupo virus;

31. Marburgvirus: all members of the Marburgvirus genus;

32. Monkeypox virus;

33. Murray Valley encephalitis virus;

34. Newcastle disease virus;

35. Nipah virus;

36. Omsk hemorrhagic fever virus;

37. Oropouche virus;

38. Peste-des-petits-ruminants virus;

39. Swine vesicular disease virus;

40. Powassan virus;

41. Rabies virus and all other members of the Lyssavirus genus;

42. Rift Valley fever virus;

43. Rinderpest virus;

44. Rocio virus;

45. Sabia virus;

46. Seoul virus;

47. Sheeppox virus;

48. Sin Nombre virus;

49. St. Louis encephalitis virus;

50. Porcine Teschovirus;

51. Tick-borne encephalitis virus (Far Eastern subtype);

52. Variola virus;

53. Venezuelan equine encephalitis virus;

54. Vesicular stomatitis virus;

55. Western equine encephalitis virus;

56. Yellow fever virus;

57. Severe acute respiratory syndrome-related coronavirus (SARS-related coronavirus);

58. Reconstructed 1918 influenza virus;

59. Middle East respiratory syndrome-related coronavirus (MERS-related coronavirus);

Not used;

Bacteria, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Bacillus anthracis;

2. Brucella abortus;

3. Brucella melitensis;

4. Brucella suis;

5. Burkholderia mallei (Pseudomonas mallei);

6. Burkholderia pseudomallei (Pseudomonas pseudomallei);

7. Chlamydia psittaci (Chlamydophila psittaci);

8. Clostridium argentinense (formerly known as Clostridium botulinum Type G), botulinum neurotoxin producing strains;

9. Clostridium baratii, botulinum neurotoxin producing strains;

10. Clostridium botulinum;

11. Clostridium butyricum, botulinum neurotoxin producing strains;

12 Clostridium perfringens epsilon toxin producing types;

13. Coxiella burnetii;

14. Francisella tularensis;

15. Mycoplasma capricolum subspecies capripneumoniae (strain F38);

16. Mycoplasma mycoides subspecies mycoides SC (small colony);

17. Rickettsia prowazekii;

18. Salmonella enterica subspecies enterica serovar Typhi (Salmonella typhi);

19. Note: Shiga toxin producing Escherichia coli (STEC) of serogroups O26, O45, O103, O104, O111, O121, O145, O157, and other shiga toxin producing serogroups; Shiga toxin producing Escherichia coli (STEC) includes inter alia enterohaemorrhagic E. coli (EHEC), verotoxin producing E. coli (VTEC) or verocytotoxin producing E. coli (VTEC).

20. Shigella dysenteriae;

21. Vibrio cholerae;

22. Yersinia pestis;

d.Note:

Toxins, as follows, and sub-unit of toxins thereof: 1C351.d. does not control botulinum neurotoxins or conotoxins in product form meeting all of the following criteria:

1. Botulinum neurotoxins;

2. Clostridium perfringens alpha, beta 1, beta 2, epsilon and iota toxins;

3. Conotoxins;

4. Ricin;

5. Saxitoxin;

6. Shiga toxins (shiga-like toxins, verotoxins and verocytotoxins)

7. Staphylococcus aureus enterotoxins, hemolysin alpha toxin, and toxic shock syndrome toxin (formerly known as Staphylococcus enterotoxin F);

8. Tetrodotoxin;

9. Not used;

10. Microcystins (Cyanginosins);

11. Aflatoxins;

12. Abrin;

13. Not used;

14. Diacetoxyscirpenol;

15. T-2 toxin;

16. HT-2 toxin;

17. Modeccin;

18. Volkensin;

19. Viscumin (Viscum Album Lectin 1);

20. Brevetoxins;

21. Gonyautoxins;

22. Nodularins;

23. Palytoxin;

24. Neosaxitoxin (NEO).

d.Note:

1. Are pharmaceutical formulations designed for human administration in the treatment of medical conditions;

2. Are pre-packaged for distribution as medical products;

3. Are authorised by a state authority to be marketed as medical products.

Fungi, whether natural, enhanced or modified, either in the form of isolated live cultures or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Coccidioides immitis;

2. Coccidioides posadasii.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 a.

Any 'genetically-modified organism' which contains, or 'genetic element' that codes for, any of the following:

1. Any gene, genes, translated product or translated products, specific to any virus specified in 1C351.a. or 1C354.a.;

2. Any gene or genes specific to any bacterium specified in 1C351.c. or 1C354.b. or fungus specified in 1C351.e. or 1C354.c., and which is any of the following:

2. a.

In itself or through its transcribed or translated products represents a significant hazard to human, animal or plant health; or

Could 'endow or enhance pathogenicity'; or

3. Any toxins specified in 1C351.d. or sub-units of toxins therefor;

Not used.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 Technical Notes: 1.2.3.Note 1:Note 2:1C354 a.

1. Andean potato latent virus (Potato Andean latent tymovirus);

2. Potato spindle tuber viroid;

Bacteria, whether natural, enhanced or modified, either in the form of isolated live cultures or as material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Xanthomonas albilineans;

2. Xanthomonas citri pv. citri (Xanthomonas axonopodis pv. citri, Xanthomonas campestris pv. citri);

3. Xanthomonas oryzae pv. oryzae (Pseudomonas campestris pv. oryzae);

4. Clavibacter michiganensis subsp. sepedonicus (Clavibacter sepedonicus, Clavibacter michiganense subsp. sepedonicus, Corynebacterium michiganensis subsp. sepedonicum or Corynebacterium sepedonicum);

5. Ralstonia solanacearum, race 3, biovar 2;

Fungi, whether natural, enhanced or modified, either in the form of isolated live cultures or as material which has been deliberately inoculated or contaminated with such cultures, as follows:

1. Colletotrichum kahawae (Colletotrichum coffeanum var. virulans);

2. Bipolaris oryzae (Cochliobolus miyabeanus, Helminthosporium oryzae);

3. Pseudocercospora ulei (Microcyclus ulei, Dothidella ulei);

4. Puccinia graminis ssp. graminis var. graminis / Puccinia graminis ssp. graminis var. stakmanii (Puccinia graminis [syn. Puccinia graminis f. sp. tritici]);

5. Puccinia striiformis (syn. Puccinia glumarum);

6. Magnaporthe oryzae (Pyricularia oryzae);

7. Peronosclerospora philippinensis (Peronosclerospora sacchari);

8. Sclerophthora rayssiae var. zeae;

9. Synchytrium endobioticium;

10. Tilletia indica;

11. Thecaphora solani.

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 Technical Notes: 1.2.3.Note 1:Note 2:1C3541C450N.B.

a.Note 1:Note 2:Note 3:Note 4:

Toxic chemicals, as follows: For exports to States not Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.1. and .a.2. in which no individually specified chemical constitutes more than 1 % by the weight of the mixture. For exports to States Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.1. and .a.2. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.a.4., .a.5., .a.6. and .a.7. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C450 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use.

1. Amiton: O,O-Diethyl S-[2-(diethylamino)ethyl] phosphorothiolate (CAS 78-53-5) and corresponding alkylated or protonated salts;

2. PFIB: 1,1,3,3,3-Pentafluoro-2-(trifluoromethyl)-1-propene (CAS 382-21-8);

3. SEE MILITARY GOODS CONTROLS FOR BZ: 3-Quinuclidinyl benzilate (CAS 6581-06-2);

4. Phosgene: Carbonyl dichloride (CAS 75-44-5);

5. Cyanogen chloride (CAS 506-77-4);

6. Hydrogen cyanide (CAS 74-90-8);

7. Chloropicrin: Trichloronitromethane (CAS 76-06-2);

b.Note 1:Note 2:Note 3:Note 4:

Toxic chemical precursors, as follows: For exports to States not Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.b.1., .b.2., .b.3., .b.4., .b.5. and .b.6. in which no individually specified chemical constitutes more than 10 % by the weight of the mixture. For exports to States Party to the Chemical Weapons Convention, 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entries 1C450.b.1., .b.2., .b.3., .b.4., .b.5. and .b.6. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C450 does not control chemical mixtures containing one or more of the chemicals specified in entry 1C450.b.8. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture. 1C450 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use.

1.Note: Chemicals, other than those specified in the Military Goods Controls or in 1C350, containing a phosphorus atom to which is bonded one methyl, ethyl or propyl (normal or iso) group but not further carbon atoms; 1C450.b.1. does not control Fonofos: O-Ethyl S-phenyl ethylphosphonothiolothionate (CAS 944-22-9);

2.N.B. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] phosphoramidic dihalides, other than N,N-Dimethylaminophosphoryl dichloride; See 1C350.57. for N,N-Dimethylaminophosphoryl dichloride.

3. Dialkyl [methyl, ethyl or propyl (normal or iso)] N,N-dialkyl [methyl, ethyl or propyl (normal or iso)]-phosphoramidates, other than Diethyl-N,N-dimethylphosphoramidate which is specified in 1C350;

4. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethyl-2-chlorides and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethyl chloride or N,N-Diisopropyl-(beta)-aminoethyl chloride hydrochloride which are specified in 1C350;

5.Note: N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethane-2-ols and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethanol (CAS 96-80-0) and N,N-Diethylaminoethanol (CAS 100-37-8) which are specified in 1C350; 1C450.b.5. does not control the following:

5.Note: a.

N,N-Dimethylaminoethanol (CAS 108-01-0) and corresponding protonated salts;

Protonated salts of N,N-Diethylaminoethanol (CAS 100-37-8);

6. N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethane-2-thiols and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethane thiol (CAS 5842-07-9) and N,N-Diisopropylaminoethanethiol hydrochloride (CAS 41480-75-5) which are specified in 1C350;

7. See 1C350 for ethyldiethanolamine (CAS 139-87-7);

8. Methyldiethanolamine (CAS 105-59-9).

1C Technical Note: 1C001N.B.1C002N.B.Note: Technical Note: Technical Notes: 1C0031C0041C005 Technical Note: 1C0061C007N.B. Technical Note: 1C008 Technical Notes: 1.2.1C0091C010N.B. Technical Notes: 1.2.1C011N.B.N.B.1C012 Technical Note: 1C101Note 1:Note 2: Technical Note: 1C1021C1071C111Note:1C116N.B. Technical Note 1: Technical Note 2: 1C117 Technical Note: 1C1181C202 Technical Note: 1C2101C216Note: Technical Note: 1C2271C2281C2291C230N.B.Note:1C2311C232Note:1C233Note: Technical Note: 1C234Note:1C235Note:1C236Note: Technical Note: 1C237Note:1C2381C2391C240Note: Technical Note: 1C2411C350N.B.Note 1:Note 2:Note 3:Note 4:1C351Note:1C353 Technical Notes: 1.2.3.Note 1:Note 2:1C3541C450N.B.1C513 Technical Notes:

1. 'High-entropy alloys' are alloys having at least 5 principal metallic elements, each having concentration within the range of 5 to 35 atomic percent, from the following list: Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Hf, Ta or W.

2. 'Inoculants' are additives that promote grain nucleation and increase the total area of grain boundaries to inhibit solidification defects.

3. 'Refractory metals and alloys' include the following metals and their alloys: niobium, molybdenum, tungsten and tantalum.

1D1D0011D0021D0031D1011D1031D201

Software Software specially designed or modified for the development, production or use of equipment specified in 1B001 to 1B003. Software for the development of organic matrix, metal matrix or carbon matrix laminates or composites. Software specially designed or modified to enable equipment to perform the functions of equipment specified in 1A004.c. or 1A004.d. Software specially designed or modified for the operation or maintenance of goods specified in 1B101, 1B102, 1B115, 1B117, 1B118 or 1B119. Software specially designed for analysis of reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures. Software specially designed for the use of goods specified in 1B201.

1E1E0011E0021E1011E1021E1031E104Note:1E2011E2021E203

Technology Technology according to the General Technology Note for the development or production of equipment or materials specified in 1A002 to 1A005, 1A006.b., 1A007, 1B or 1C. Other technology as follows: Technology according to the General Technology Note for the use of goods specified in 1A102, 1B001, 1B101, 1B102, 1B115 to 1B119, 1C001, 1C101, 1C107, 1C111 to 1C118, 1D101 or 1D103. Technology according to the General Technology Note for the development of software specified in 1D001, 1D101 or 1D103. Technology for the regulation of temperature, pressure or atmosphere in autoclaves or hydroclaves, when used for the production of composites or partially processed composites. Technology for the production of pyrolytically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. 1E104 includes technology for the composition of precursor gases, flow-rates and process control schedules and parameters. Technology according to the General Technology Note for the use of goods specified in 1A002, 1A007, 1A202, 1A225 to 1A227, 1B201, 1B225 to 1B235, 1C002.b.3. or .b.4., 1C010.b., 1C202, 1C210, 1C216, 1C225 to 1C241 or 1D201. Technology according to the General Technology Note for the development or production of goods specified in 1A007, 1A202 or 1A225 to 1A227. Technology according to the General Technology Note for the development of software specified in 1D201.

1E1E0011E002 a.

Technology for the development or production of polybenzothiazoles or polybenzoxazoles;

Technology for the development or production of fluoroelastomer compounds containing at least one vinylether monomer;

Technology for the design or production of the following ceramic powders or non-composite ceramic materials:

1. Ceramic powders having all of the following:

1. a.

Any of the following compositions:

1. Single or complex oxides of zirconium and complex oxides of silicon or aluminium;

2. Single nitrides of boron (cubic crystalline forms);

3. Single or complex carbides of silicon or boron; or

4. Single or complex nitrides of silicon;

Any of the following total metallic impurities (excluding intentional additions):

1. Less than 1000 ppm for single oxides or carbides; or

2. Less than 5000 ppm for complex compounds or single nitrides; and

Being any of the following:

1. Zirconia (CAS 1314-23-4) with an average particle size equal to or less than 1 μm and no more than 10 % of the particles larger than 5 μm; or

2. Other ceramic powders with an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm;

2.Note: Non-composite ceramic materials composed of the materials specified in 1E002.c.1.; 1E002.c.2. does not control technology for abrasives.

Not used;

Technology for the installation, maintenance or repair of materials specified in 1C001;

f.Note:

Technology for the repair of composite structures, laminates or materials specified in 1A002 or 1C007.c.; 1E002.f. does not control technology for the repair of civil aircraft structures using carbon fibrous or filamentary materials and epoxy resins, contained in aircraft manufacturers' manuals.

Libraries specially designed or modified to enable equipment to perform the functions of equipment specified in 1A004.c. or 1A004.d.

PART IV Category 2

CATEGORY 2 MATERIALS PROCESSING

2AN.B.2A001N.B.2A1012A2252A226 Technical Note:

Systems, Equipment and Components For quiet running bearings, see the Military Goods Controls. Anti-friction bearings, bearing systems and components, as follows: SEE ALSO 2A101. Radial ball bearings, other than those specified in 2A001, having all tolerances specified in accordance with ISO 492 Tolerance Class 2 (or ANSI/ABMA Std 20 Tolerance Class ABEC-9 or other national equivalents), or better and having all of the following characteristics: Crucibles made of materials resistant to liquid actinide metals, as follows: Valves having all of the following characteristics: For valves with different inlet and outlet diameters, the 'nominal size' in 2A226 refers to the smallest diameter.

2AN.B.2A001N.B. a.Note: Technical Notes: 1.2.

Ball bearings and solid roller bearings, having all tolerances specified by the manufacturer in accordance with ISO 492 Tolerance Class 4 or Class 2 (or national equivalents), or better, and having both 'rings' and 'rolling elements', made from monel or beryllium; 2A001.a. does not control tapered roller bearings. For the purposes of 2A001.a.: 'Ring' is a annular part of a radial rolling bearing incorporating one or more raceways (ISO 5593:1997). 'Rolling element' is a ball or roller which rolls between raceways (ISO 5593:1997).

Not used;

Active magnetic bearing systems using any of the following, and specially designed components therefor:

1. Materials with flux densities of 2,0 T or greater and yield strengths greater than 414 MPa;

2. All-electromagnetic 3D homopolar bias designs for actuators; or

3. High temperature (450 K (177 °C) and above) position sensors.

2AN.B.2A001N.B.2A101 a.

An inner ring bore diameter between 12 mm and 50 mm;

An outer ring outside diameter between 25 mm and 100 mm; and

A width between 10 mm and 20 mm.

2AN.B.2A001N.B.2A1012A225 a.

Crucibles having both of the following characteristics:

1. A volume of between 150 cm3 and 8000 cm3; and

2. Made of or coated with any of the following materials, or combination of the following materials, having an overall impurity level of 2 % or less by weight:

2. a.

Calcium fluoride (CaF2);

Calcium zirconate (metazirconate) (CaZrO3);

Cerium sulphide (Ce2S3);

Erbium oxide (erbia) (Er2O3);

Hafnium oxide (hafnia) (HfO2);

Magnesium oxide (MgO);

Nitrided niobium-titanium-tungsten alloy (approximately 50 % Nb, 30 % Ti, 20 % W);

Yttrium oxide (yttria) (Y2O3); or

Zirconium oxide (zirconia) (ZrO2);

Crucibles having both of the following characteristics:

1. A volume of between 50 cm3 and 2000 cm3; and

2. Made of or lined with tantalum, having a purity of 99,9 % or greater by weight;

Crucibles having all of the following characteristics:

1. A volume of between 50 cm3 and 2000 cm3;

2. Made of or lined with tantalum, having a purity of 98 % or greater by weight; and

3. Coated with tantalum carbide, nitride, boride, or any combination thereof.

2AN.B.2A001N.B.2A1012A2252A226 a.

A 'nominal size' of 5 mm or greater;

Having a bellows seal; and

Wholly made of or lined with aluminium, aluminium alloy, nickel, or nickel alloy containing more than 60 % nickel by weight.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350Note: Technical Notes: 1.2.2B3512B352N.B.2B510 Technical Notes: 1.2.3.4.

Test, Inspection and Production Equipment For the purposes of 2B, secondary parallel contouring axes, (e.g., the w-axis on horizontal boring mills or a secondary rotary axis the centre line of which is parallel to the primary rotary axis) are not counted in the total number of contouring axes. Rotary axes need not rotate over 360°. A rotary axis can be driven by a linear device (e.g., a screw or a rack-and-pinion). For the purposes of 2B, the number of axes which can be co-ordinated simultaneously for contouring control is the number of axes along or around which, during processing of the workpiece, simultaneous and interrelated motions are performed between the workpiece and a tool. This does not include any additional axes along or around which other relative movement within the machine are performed such as: For the purposes of 2B, axis nomenclature shall be in accordance with ISO 841:2001, Industrial automation systems and integration - Numerical control of machines - Coordinate system and motion nomenclature. For the purposes of 2B001 to 2B009, a tilting spindle is counted as a rotary axis. For the purposes of 2B, 'stated unidirectional positioning repeatability' may be used for each machine tool model as an alternative to individual machine tests and is determined as follows: For the purposes of 2B001.a. to 2B001.c., measurement uncertainty for the unidirectional positioning repeatability of machine tools, as defined in the ISO 230-2:2014 or national equivalents, shall not be considered. For the purposes of 2B001.a. to 2B001.c., the measurement of axes shall be made according to test procedures in 5.3.2. of ISO 230-2:2014. Tests for axes longer than 2 meters shall be made over 2 m segments. Axes longer than 4 m require multiple tests (e.g., two tests for axes longer than 4 m and up to 8 m, three tests for axes longer than 8 m and up to 12 m), each over 2 m segments and distributed in equal intervals over the axis length. Test segments are equally spaced along the full axis length, with any excess length equally divided at the beginning, in between, and at the end of the test segments. The smallest unidirectional positioning repeatability-value of all test segments is to be reported. Machine tools and any combination thereof, for removing (or cutting) metals, ceramics or composites, which, according to the manufacturer’s technical specification, can be equipped with electronic devices for numerical control, as follows: SEE ALSO 2B201. 2B001 does not control special purpose machine tools limited to the manufacture of gears. For such machines see 2B003. 2B001 does not control special purpose machine tools limited to the manufacture of any of the following: A machine tool having at least two of the three turning, milling or grinding capabilities (e.g., a turning machine with milling capability), must be evaluated against each applicable entry 2B001.a., b. or c. A machine tool having an additive manufacturing capability in addition to a turning, milling or grinding capability must be evaluated against each applicable entry 2B001.a., .b. or .c. For optical finishing machines, see 2B002. Numerically controlled optical finishing machine tools equipped for selective material removal to produce non-spherical optical surfaces having all of the following characteristics: For the purposes of 2B002: 'MRF' is a material removal process using an abrasive magnetic fluid whose viscosity is controlled by a magnetic field. 'ERF' is a removal process using an abrasive fluid whose viscosity is controlled by an electric field. 'Energetic particle beam finishing' uses Reactive Atom Plasmas (RAP) or ion-beams to selectively remove material. 'Inflatable membrane tool finishing' is a process that uses a pressurized membrane that deforms to contact the workpiece over a small area. 'Fluid jet finishing' makes use of a fluid stream for material removal. Numerically controlled machine tools, specially designed for the shaving, finishing, grinding or honing of hardened (Rc=40 or more) spur, helical and double-helical gears having all of the following: Hot isostatic presses having all of the following, and specially designed components and accessories therefor: SEE ALSO 2B104 and 2B204. For the purposes of 2B004, the inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other. For specially designed dies, moulds and tooling, see 1B003, 9B009 and the Military Goods Controls. Equipment specially designed for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows, for substrates specified in column 2, by processes shown in column 1 in the Table following 2E003.f., and specially designed automated handling, positioning, manipulation and control components therefor: 2B005 does not control chemical vapour deposition, cathodic arc, sputter deposition, ion plating or ion implantation equipment, specially designed for cutting or machining tools. Dimensional inspection or measuring systems, equipment, position feedback units and electronic assemblies, as follows: 2B006 includes machine tools, other than those specified in 2B001, that can be used as measuring machines if they meet or exceed the criteria specified for the measuring machine function. Robots having any of the following characteristics and specially designed controllers and end-effectors therefor: SEE ALSO 2B207. 'Compound rotary tables' and tilting spindles, specially designed for machine tools, as follows: Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with numerical control units or a computer control and having all of the following: SEE ALSO 2B109 AND 2B209. For the purposes of 2B009, machines combining the function of spin-forming and flow-forming are regarded as flow-forming machines. Isostatic presses, other than those specified in 2B004, having all of the following: SEE ALSO 2B204. Chemical vapour deposition (CVD) furnaces, other than those specified in 2B005.a., designed or modified for the densification of carbon-carbon composites. Flow-forming machines, other than those specified in 2B009, usable in the production of propulsion components and equipment (e.g. motor cases and interstages) for missiles, and specially designed components as follows: SEE ALSO 2B209. Machines combining the function of spin-forming and flow-forming are for the purpose of 2B109 regarded as flow-forming machines. Vibration test systems, equipment and components therefor, as follows: In 2B116, 'bare table' means a flat table, or surface, with no fixture or fittings. Equipment and process controls, other than those specified in 2B004, 2B005.a., 2B104 or 2B105, designed or modified for densification and pyrolysis of structural composite rocket nozzles and reentry vehicle nose tips. Balancing machines and related equipment, as follows: SEE ALSO 2B219. Motion simulators or rate tables having all of the following characteristics: 2B120 does not control rotary tables designed or modified for machine tools or for medical equipment. For controls on machine tool rotary tables see 2B008. Motion simulators or rate tables specified in 2B120 remain controlled whether or not slip rings or integrated non-contact devices are fitted at time of export. Positioning tables (equipment capable of precise rotary positioning in any axes), other than those specified in 2B120, having all of the following characteristics: 2B121 does not control rotary tables designed or modified for machine tools or for medical equipment. For controls on machine tool rotary tables see 2B008. Centrifuges capable of imparting accelerations greater than 100 g and designed or modified to incorporate slip rings or integrated non-contact devices capable of transferring electrical power, signal information, or both. Centrifuges specified in 2B122 remain controlled whether or not slip rings or integrated non-contact devices are fitted at time of export. Machine tools and any combination thereof, other than those specified in 2B001, as follows, for removing or cutting metals, ceramics or composites, which, according to the manufacturer’s technical specification, can be equipped with electronic devices for simultaneous contouring control in two or more axes: Stated positioning accuracy levels derived under the following procedures from measurements made according to ISO 230-2:1988 or national equivalents may be used for each machine tool model if provided to, and accepted by, national authorities instead of individual machine tests. Determination of stated positioning accuracy: 2B201 does not control special purpose machine tools limited to the manufacture of any of the following parts: A machine tool having at least two of the three turning, milling or grinding capabilities (e.g., a turning machine with milling capability), must be evaluated against each applicable entry 2B201.a., .b. or .c. 2B201.a.3. and 2B201.b.3. include machines based on a parallel linear kinematic design (e.g., hexapods) that have 5 or more axes none of which is a rotary axis. Isostatic presses, other than those specified in 2B004 or 2B104, and related equipment, as follows: In 2B204 the inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other. Dimensional inspection machines, instruments or systems, other than those specified in 2B006, as follows: Machine tools that can be used as measuring machines are controlled if they meet or exceed the criteria specified for the machine tool function or the measuring machine function. A machine specified in 2B206 is controlled if it exceeds the control threshold anywhere within its operating range. All parameters of measurement values in 2B206 represent plus/minus i.e., not total band. Robots, end-effectors and control units, other than those specified in 2B007, as follows: Flow forming machines, spin forming machines capable of flow forming functions, other than those specified in 2B009 or 2B109, and mandrels, as follows: 2B209.a. includes machines which have only a single roller designed to deform metal plus two auxiliary rollers which support the mandrel, but do not participate directly in the deformation process. Centrifugal multiplane balancing machines, fixed or portable, horizontal or vertical, as follows: Remote manipulators that can be used to provide remote actions in radiochemical separation operations or hot cells, having either of the following characteristics: Remote manipulators provide translation of human operator actions to a remote operating arm and terminal fixture. They may be of 'master/slave' type or operated by joystick or keypad. Controlled atmosphere (vacuum or inert gas) induction furnaces, other than those specified in 9B001 and 3B001, and power supplies therefor, as follows: SEE ALSO 3B001 and 9B001. Vacuum or other controlled atmosphere metallurgical melting and casting furnaces and related equipment as follows: Rotor fabrication or assembly equipment, rotor straightening equipment, bellows-forming mandrels and dies, as follows: All types of 'pressure transducers' capable of measuring absolute pressures and having all of the following: In 2B230 'pressure transducer' means a device that converts a pressure measurement into a signal. For the purposes of 2B230, 'accuracy' includes non-linearity, hysteresis and repeatability at ambient temperature. Vacuum pumps having all of the following characteristics: The pumping speed is determined at the measurement point with nitrogen gas or air. The ultimate vacuum is determined at the input of the pump with the input of the pump blocked off. High-velocity gun systems (propellant, gas, coil, electromagnetic, and electrothermal types, and other advanced systems) capable of accelerating projectiles to 1,5 km/s or greater. SEE ALSO MILTARY GOODS CONTROLS. Bellows-sealed scroll-type compressors and bellows-sealed scroll-type vacuum pumps having all of the following: SEE ALSO 2B350.i. Chemical manufacturing facilities, equipment and components, as follows: For the purposes of 2B350, the materials used for gaskets, packing, seals, screws, washers or other materials performing a sealing function do not determine the status of control, provided that such components are designed to be interchangeable. 'Carbon graphite' is a composition consisting of amorphous carbon and graphite, in which the graphite content is eight percent or more by weight. For the listed materials in the above entries, the term 'alloy' when not accompanied by a specific elemental concentration is understood as identifying those alloys where the identified metal is present in a higher percentage by weight than any other element. Toxic gas monitors and monitoring systems and their dedicated detecting components, other than those specified in 1A004, as follows; and detectors; sensor devices; and replaceable sensor cartridges therefor: Biological manufacturing and handling equipment, as follows: For chemical reaction vessels or reactors, see 2B350.a. Additive manufacturing equipment, designed to produce metal or metal alloy components, having all of the following, and specially designed components therefor: For the purposes of 2B510: 'In-process monitoring', also known as in-situ process monitoring, pertains to the observation and measurement of the additive manufacturing process including electromagnetic, or thermal, emissions from the melt pool. 'Co-axial configuration', also known as on-axis or inline configuration, pertains to one or more sensors that are mounted in an optical path shared by the laser consolidation source. 'Paraxial configuration' pertains to one or more sensors that are physically mounted onto or integrated into the laser, electron beam, or electric arc consolidation source component. For both 'co-axial configuration' and 'paraxial configuration', the field of view of the sensor(s) is fixed to the moving reference frame of the consolidation source and moves in the same scan trajectories of the consolidation source throughout the build process.

2B Technical Notes: 1.2. a.

Wheel-dressing systems in grinding machines;

Parallel rotary axes designed for mounting of separate workpieces;

Co-linear rotary axes designed for manipulating the same workpiece by holding it in a chuck from different ends.

2B Technical Notes: 1.2.3.4.5. a.

Select five machines of a model to be evaluated;

Measure the linear axis repeatability (R↑,R↓) according to ISO 230-2:2014 and evaluate unidirectional positioning repeatability for each axis of each of the five machines;

Determine the arithmetic mean value of the unidirectional positioning repeatability-values for each axis of all five machines together. These arithmetic mean values of unidirectional positioning repeatability () become the stated value of each axis for the model (x,y, …);

Since the Category 2 list refers to each linear axis there will be as many 'stated unidirectional positioning repeatability values as there are linear axes;

If any axis of a machine model not specified in 2B001.a. to 2B001.c. has a 'stated unidirectional positioning repeatability equal to or less than the specified unidirectional positioning repeatability of each machine tool model plus 0,7 μm, the builder should be required to reaffirm the accuracy level once every eighteen months.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2: a.

Crankshafts or camshafts;

Tools or cutters;

Extruder worms;

Engraved or facetted jewellery parts; or

Dental prostheses.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.

a.Note 1:Note 2:

Machine tools for turning having two or more axes which can be coordinated simultaneously for contouring control having any of the following: 2B001.a. does not control turning machines specially designed for producing contact lenses, having all of the following: 2B001.a. does not control bar machines (Swissturn), limited to machining only bar feed thru, if maximum bar diameter is equal to or less than 42 mm and there is no capability of mounting chucks. Machines may have drilling or milling capabilities for machining parts with diameters less than 42 mm.

1. Unidirectional positioning repeatability equal to or less (better) than 0,9 μm along one or more linear axis with a travel length less than 1,0 m; or

2. Unidirectional positioning repeatability equal to or less (better) than 1,1 μm along one or more linear axis with a travel length equal to or greater than 1,0 m;

a.Note 1: a.

Machine controller limited to using ophthalmic based software for part programming data input; and

No vacuum chucking.

Machine tools for milling having any of the following:

1. Three linear axes plus one rotary axis which can be coordinated simultaneously for contouring control having any of the following:

1. a.

Unidirectional positioning repeatability equal to or less (better) than 0,9 μm along one or more linear axis with a travel length less than 1,0 m; or

Unidirectional positioning repeatability equal to or less (better) than 1,1 μm along one or more linear axis with a travel length equal to or greater than 1,0m;

2. Five or more axes which can be coordinated simultaneously for contouring control having any of the following;

2. a.

Unidirectional positioning repeatability equal to or less (better) than 0,9 μm along one or more linear axis with a travel length less than 1,0 m;

Unidirectional positioning repeatability equal to or less (better) than 1,4 μm along one or more linear axis with a travel length equal to or greater than 1 m and less than 4 m; or

Unidirectional positioning repeatability equal to or less (better) than 6,0 μm (along one or more linear axis with a travel length equal to or greater than 4 m;

3. A unidirectional positioning repeatability for jig boring machines, equal to or less (better) than 1,1 μm along one or more linear axis; or

4. Technical Notes: 1.2.

Fly cutting machines having all of the following: For the purposes of 2B001.b.4.a.: 'Run-out' (out-of-true running) is the radial displacement in one revolution of the main spindle measured in a plane perpendicular to the spindle axis at a point on the external or internal revolving surface to be tested (ISO 230-1:2012). 'Camming' (axial displacement) is axial displacement in one revolution of the main spindle measured in a plane perpendicular to the spindle faceplate, at a point next to the circumference of the spindle faceplate (ISO 230-1:2012).

4. a.

Spindle 'run-out' and 'camming' less (better) than 0,0004 mm TIR; and

Angular deviation of slide movement (yaw, pitch and roll) less (better) than 2 seconds of arc, TIR over 300 mm of travel;

c.Note:

Machine tools for grinding having any of the following: 2B001.c. does not control grinding machine as follows:

1. Having all of the following:

1. a.

Unidirectional positioning repeatability equal to or less (better) than 1,1 μm along one or more linear axis; and

Three or four axes which can be coordinated simultaneously for contouring control; or

2. Five or more axes which can be coordinated simultaneously for contouring control having any of the following:

2. a.

Unidirectional positioning repeatability equal to or less (better) than 1,1 μm along one or more linear axis with a travel length less than 1 m;

Unidirectional positioning repeatability equal to or less (better) than 1,4 μm along one or more linear axis with a travel length equal to or greater than 1 m and less than 4 m; or

Unidirectional positioning repeatability equal to or less (better) than 6,0 μm along one or more linear axis with a travel length equal to or greater than 4 m;

c.Note:

a.

Cylindrical external, internal, and external-internal grinding machines, having all of the following:

1. Limited to cylindrical grinding; and

2. Limited to a maximum workpiece capacity of 150 mm outside diameter or length;

b.

Machines designed specifically as jig grinders that do not have a z-axis or a w-axis, with a unidirectional positioning repeatability less (better) than 1,1 μm;

c.

Surface grinders.

Electrical discharge machines (EDM) of the non-wire type which have two or more rotary axes which can be coordinated simultaneously for contouring control;

Machine tools for removing metals, ceramics or composites, having all of the following:

1. Removing material by means of any of the following:

1. a.

Water or other liquid jets, including those employing abrasive additives;

Electron beam; or

Laser beam; and

2. At least two rotary axes having all of the following:

2. a.

Can be coordinated simultaneously for contouring control; and

A positioning accuracy of less (better) than 0,003°;

Deep-hole-drilling machines and turning machines modified for deep-hole-drilling, having a maximum depth-of-bore capability exceeding 5m.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 a.

Finishing the form to less (better) than 1,0 μm;

Finishing to a roughness less (better) than 100 nm rms.

Four or more axes which can be coordinated simultaneously for contouring control; and

Using any of the following processes:

1. 'Magnetorheological finishing' ('MRF');

2. 'Electrorheological finishing' ('ERF');

3. 'Energetic particle beam finishing';

4. 'Inflatable membrane tool finishing'; or

5. 'Fluid jet finishing'.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B003 a.

A pitch diameter exceeding 1250 mm;

A face width of 15 % of pitch diameter or larger; and

A finished quality of AGMA 14 or better (equivalent to ISO 1328 class 3).

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. a.

A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and

Having any of the following:

1. A maximum working pressure exceeding 207 MPa;

2. A controlled thermal environment exceeding 1773 K (1500 °C); or

3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005 a.N.B.

Chemical vapour deposition (CVD) production equipment having all of the following: SEE ALSO 2B105.

1. A process modified for one of the following:

1. a.

Pulsating CVD;

Controlled nucleation thermal deposition (CNTD); or

Plasma enhanced or plasma assisted CVD; and

2. Having any of the following:

2. a.

Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or

Incorporating in situ coating thickness control;

Ion implantation production equipment having beam currents of 5 mA or more;

Electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following:

1. A liquid pool level laser control system which regulates precisely the ingots feed rate; or

2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;

Plasma spraying production equipment having any of the following:

1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or

2. Incorporating in situ coating thickness control;

Sputter deposition production equipment capable of current densities of 0,1 mA/mm2 or higher at a deposition rate of 15 μm/h or more;

Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;

Ion plating production equipment capable of the in situ measurement of any of the following:

1. Coating thickness on the substrate and rate control; or

2. Optical characteristics.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006 a. Technical Note: N.B.

Computer controlled or numerical controlled Coordinate Measuring Machines (CMM), having a three dimensional (volumetric) maximum permissible error of length measurement (E0,MPE) at any point within the operating range of the machine (i.e., within the length of axes) equal to or less (better) than (1,7 + L/1000) μm (L is the measured length in mm), according to ISO 10360-2:2009; For the purposes of 2B006.a., the E0,MPE of the most accurate configuration of the CMM specified by the manufacturer (e.g., best of the following: probe, stylus length, motion parameters, environment) and with all compensations available shall be compared to the 1,7+L/1000 μm threshold. SEE ALSO 2B206.

b.Note: Technical Note:

Linear displacement measuring instruments or systems, linear position feedback units, and electronic assemblies, as follows: Interferometer and optical-encoder measuring systems containing a laser are only specified in 2B006.b.3 and 2B206.c. For the purposes of 2B006.b., 'resolution' is the least increment of a measuring device; on digital instruments, the least significant bit.

b.Note:

1. Technical Notes: 1.2.

'Non-contact type measuring systems' with a 'resolution' equal to or less (better) than 0,2 μm within 0 to 0,2 mm of the 'measuring range'; For the purposes of 2B006.b.1.: 'Non -contact type measuring systems' are designed to measure the distance between the probe and measured object along a single vector, where the probe or measured object is in motion. 'Measuring range' means the distance between the minimum and maximum working distance.

2. Linear position feedback units specially designed for machine tools and having an overall accuracy less (better) than (800 + (600 × L/1000)) nm (L equals effective length in mm);

3. Measuring systems having all of the following:

3. a.

Containing a laser;

A 'resolution' over their full scale of 0,200 nm or less (better); and

Capable of achieving a measurement uncertainty equal to or less (better) than (1,6 + L/2000) nm (L is the measured length in mm) at any point within a measuring range, when compensated for the refractive index of air and measured over a period of 30 seconds at a temperature of 20 ± 0,01 °C;

4. Electronic assemblies specially designed to provide feedback capability in systems specified in 2B006.b.3.;

c.Note:

Rotary position feedback units specially designed for machine tools or angular displacement measuring instruments, having an angular position accuracy equal to or less (better) than 0,9 second of arc; 2B006.c. does not control optical instruments, such as autocollimators, using collimated light (e.g. laser light) to detect angular displacement of a mirror.

Equipment for measuring surface roughness (including surface defects), by measuring optical scatter with a sensitivity of 0,5 nm or less (better).

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B. a.

Not used;

b.Note:

Specially designed to comply with national safety standards applicable to potentially explosive munitions environments; 2B007.b. does not control robots specially designed for paint-spraying booths.

c. Technical Note:

Specially designed or rated as radiation-hardened to withstand a total radiation dose greater than 5 × 103 Gy (silicon) without operational degradation; or The term Gy (silicon) refers to the energy in Joules per kilogram absorbed by an unshielded silicon sample when exposed to ionising radiation.

Specially designed to operate at altitudes exceeding 30000 m.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B008 a.

Not used;

c. Technical Note:

'Compound rotary tables' having all of the following: For the purposes of 2B008.c., a 'compound rotary table' is a table allowing the workpiece to rotate and tilt about two non-parallel axes.

1. Designed for machine tools for turning, milling or grinding; and

2. Two rotary axes designed to be coordinated simultaneously for contouring control;

Tilting spindles having all of the following :

1. Designed for machine tools for turning, milling or grinding; and

2. Designed to be coordinated simultaneously for contouring control.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. a.

Three or more axes which can be coordinated simultaneously for contouring control; and

A roller force more than 60 kN.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B. a.

Maximum working pressure of 69 MPa or greater;

Designed to achieve and maintain a controlled thermal environment of 873 K (600 °C) or greater; and

Possessing a chamber cavity with an inside diameter of 254 mm or greater.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. a.

Flow-forming machines having all of the following:

1. Equipped with, or, according to the manufacturer's technical specification, are capable of being equipped with numerical control units or computer control; and

2. More than two axes which can be coordinated simultaneously for contouring control.

Specially designed components for flow-forming machines specified in 2B009 or 2B109.a.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 a. Technical Note:

'Vibration test systems incorporating a digital controller' and employing feedback or closed loop techniques, capable of vibrating a system at an acceleration equal to or greater than 10 g rms between 20 Hz and 2 kHz while imparting forces equal to or greater than 50 kN, measured 'bare table'; In 2B116.a., 'vibration test systems incorporating a digital controller' are those systems, the functions of which are, partly or entirely, automatically controlled by stored and digitally coded electrical signals.

b. Technical Note:

Digital controllers, combined with specially designed vibration test software, with a 'real-time control bandwidth' greater than 5 kHz designed for use with systems specified in 2B116.a.; In 2B116.b., 'real-time control bandwidth' means the maximum rate at which a controller can execute complete cycles of sampling, processing data and transmitting control signals.

Vibration thrusters (shaker units), with or without associated amplifiers, capable of imparting a force equal to or greater than 50 kN, measured 'bare table', and usable in systems specified in 2B116.a.;

Test piece support structures and electronic units designed to combine multiple shaker units in a system capable of providing an effective combined force equal to or greater than 50 kN, measured 'bare table', and usable in systems specified in 2B116.a.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B. a.Note:

Balancing machines having all of the following characteristics: 2B119.a. does not control balancing machines designed or modified for dental or other medical equipment.

1. Not capable of balancing rotors/assemblies having a mass greater than 3 kg;

2. Capable of balancing rotors/assemblies at speeds greater than 12500 rpm;

3. Capable of correcting unbalance in two planes or more; and

4. Capable of balancing to a residual specific unbalance of 0,2 g mm per kg of rotor mass;

b. Technical Note:

Indicator heads designed or modified for use with machines specified in 2B119.a. Indicator heads are sometimes known as balancing instrumentation.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120 a.

Two or more axes;

Designed or modified to incorporate slip rings or integrated non-contact devices capable of transferring electrical power, signal information, or both; and

Having any of the following characteristics:

1. For any single axis having all of the following:

1. a.

Capable of rates of 400 degrees/s or more, or 30 degrees/s or less; and

A rate resolution equal to or less than 6 degrees/s and an accuracy equal to or less than 0,6 degrees/s;

2. Having a worst-case rate stability equal to or better (less) than plus or minus 0,05 % averaged over 10 degrees or more; or

3. A positioning accuracy equal to or less (better) than 5 arc second.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121 a.

Two or more axes; and

A positioning accuracy equal to or less (better) than 5 arc second.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: a.

Select five machines of a model to be evaluated;

Measure the linear axis accuracies according to ISO 230-2:1988 (6);

Determine the accuracy values (A) for each axis of each machine. The method of calculating the accuracy value is described in the ISO 230-2:1988 (6) standard;

Determine the average accuracy value of each axis. This average value becomes the stated positioning accuracy of each axis for the model (Âx Ây...);

Since item 2B201 refers to each linear axis, there will be as many stated positioning accuracy values as there are linear axes;

If any axis of a machine tool not specified in 2B201.a., 2B201.b. or 2B201.c. has a stated positioning accuracy of 6 μm or better (less) for grinding machines, and 8 μm or better (less) for milling and turning machines, both according to ISO 230-2:1988 (6), then the builder should be required to reaffirm the accuracy level once every eighteen months.

a.Note:

Machine tools for milling, having any of the following characteristics: 2B201.a. does not control milling machines having the following characteristics:

1. Positioning accuracies with all compensations available equal to or less (better) than 6 μm according to ISO 230-2:1988 (6) or national equivalents along any linear axis;

2. Two or more contouring rotary axes; or

3. Five or more axes which can be coordinated simultaneously for contouring control;

a.Note:

a.

X-axis travel greater than 2 m; and

b.

Overall positioning accuracy on the x-axis more (worse) than 30 μm.

b.Note:

Machine tools for grinding, having any of the following characteristics: 2B201.b. does not control grinding machines as follows:

1. Positioning accuracies with all compensations available equal to or less (better) than 4 μm according to ISO 230-2:1988 (6) or national equivalents along any linear axis;

2. Two or more contouring rotary axes; or

3. Five or more axes which can be coordinated simultaneously for contouring control;

b.Note:

a.

Cylindrical external, internal, and external-internal grinding machines having all of the following characteristics:

1. Limited to a maximum workpiece capacity of 150 mm outside diameter or length; and

2. Axes limited to x, z and c;

b.

Jig grinders that do not have a z-axis or a w-axis with an overall positioning accuracy less (better) than 4 μm according to ISO 230-2:19886 or national equivalents.

c.Note:

Machine tools for turning, that have positioning accuracies with all compensations available better (less) than 6 μm according to ISO 230-2:1988 (6) along any linear axis (overall positioning) for machines capable of machining diameters greater than 35 mm; 2B201.c. does not control bar machines (Swissturn), limited to machining only bar feed thru, if maximum bar diameter is equal to or less than 42 mm and there is no capability of mounting chucks. Machines may have drilling and/or milling capabilities for machining parts with diameters less than 42 mm.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1: a.

Gears;

Crankshafts or camshafts;

Tools or cutters;

Extruder worms.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 a.

Isostatic presses having both of the following characteristics:

1. Capable of achieving a maximum working pressure of 69 MPa or greater; and

2. A chamber cavity with an inside diameter in excess of 152 mm;

Dies, moulds and controls, specially designed for isostatic presses specified in 2B204.a.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206 a. Technical Note:

Computer controlled or numerically controlled coordinate measuring machines (CMM) having either of the following characteristics: The E0,MPE of the most accurate configuration of the CMM specified according to ISO 10360-2:2009 by the manufacturer (e.g., best of the following: probe, stylus, length, motion parameters, environments) and with all compensations available shall be compared to the (1,7 + L/800) μm threshold.

1. Having only two axes and having a maximum permissible error of length measurement along any axis (one dimensional), identified as any combination of E0x,MPE, E0y,MPE, or E0z,MPE, equal to or less (better) than (1,25 + L/1000) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009; or

2. Three or more axes and having a three dimensional (volumetric) maximum permissible error of length measurement (E0,MPE) equal to or less (better) than (1,7 + L/800) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009;

Systems for simultaneous linear-angular inspection of hemishells, having both of the following characteristics:

1. Measurement uncertainty along any linear axis equal to or less (better) than 3,5 μm per 5 mm; and

2. Angular position deviation equal to or less than 0,02°;

c. Technical Note: Note:

'Linear displacement' measuring systems having all of the following characteristics: For the purpose of 2B206.c. 'linear displacement' means the change of distance between the measuring probe and the measured object. 2B206.c. does not control measuring interferometer systems, without closed or open loop feedback, containing a laser to measure slide movement errors of machine tools, dimensional inspection machines, or similar equipment.

c. Technical Note:

1. Containing a laser; and

2. Capable of maintaining, for at least 12 hours, over a temperature range of ± 1 K (± 1 °C); around a standard temperature and standard pressure, all of the following:

2. a. Technical Note:

A 'resolution' over their full scale of 0,1 μm or better; and For the purpose of 2B206.c.2.a. 'resolution' is the least increment of a measuring device; on digital instruments, the least significant bit.

With a measurement uncertainty equal to or better (less) than (0,2 + L/2000) μm (L is the measured length in mm).

d. Technical Note:

Linear variable differential transformer (LVDT) systems having both of the following characteristics: For the purpose of 2B206.d. 'linear displacement' means the change of distance between the measuring probe and the measured object.

1. Having any of the following:

1. a.

Linearity equal to or less (better) than 0,1 % measured from 0 to the full operating range, for LVDTs with an operating range up to 5 mm; or

Linearity equal to or less (better) than 0,1 % measured from 0 to 5 mm for LVDTs with an operating range greater than 5 mm; and

2. Drift equal to or better (less) than 0,1 % per day at a standard ambient test room temperature ±1 K (± 1 °C).

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B207 a.

Robots or end-effectors specially designed to comply with national safety standards applicable to handling high explosives (for example, meeting electrical code ratings for high explosives);

Control units specially designed for any of the robots or end-effectors specified in 2B207.a.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209 a.

Machines having both of the following characteristics:

1. Three or more rollers (active or guiding); and

2. Which, according to the manufacturer's technical specification, can be equipped with numerical control units or a computer control;

Rotor-forming mandrels designed to form cylindrical rotors of inside diameter between 75 mm and 650 mm.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B219 a.

Centrifugal balancing machines designed for balancing flexible rotors having a length of 600 mm or more and having all of the following characteristics:

1. Swing or journal diameter greater than 75 mm;

2. Mass capability of from 0,9 to 23 kg; and

3. Capable of balancing speed of revolution greater than 5000 r.p.m.;

Centrifugal balancing machines designed for balancing hollow cylindrical rotor components and having all of the following characteristics:

1. Journal diameter greater than 75 mm;

2. Mass capability of from 0,9 to 23 kg;

3. A minimum achievable residual specific unbalance equal to or less than 10 g mm/kg per plane; and

4. Belt drive type.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 a.

A capability of penetrating 0,6 m or more of hot cell wall (through-the-wall operation); or

A capability of bridging over the top of a hot cell wall with a thickness of 0,6 m or more (over-the-wall operation).

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B. a.Note:

Furnaces having all of the following characteristics: 2B226.a. does not control furnaces designed for the processing of semiconductor wafers.

1. Capable of operation above 1123 K (850 °C);

2. Induction coils 600 mm or less in diameter; and

3. Designed for power inputs of 5 kW or more;

Power supplies, with a specified power output of 5 kW or more, specially designed for furnaces specified in 2B226.a.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B227 a.

Arc remelt furnaces, arc melt furnaces and arc melt and casting furnaces having both of the following characteristics:

1. Consumable electrode capacities between 1000 cm3 and 20000 cm3; and

2. Capable of operating with melting temperatures above 1973 K (1700 °C);

Electron beam melting furnaces, plasma atomisation furnaces and plasma melting furnaces, having both of the following characteristics:

1. A power of 50 kW or greater; and

2. Capable of operating with melting temperatures above 1473 K (1200 °C);

Computer control and monitoring systems specially configured for any of the furnaces specified in 2B227.a. or 2B227.b.;

Plasma torches specially designed for furnaces specified in 2B227.b. having both of the following characteristics:

1. Operating at a power greater than 50 kW; and

2. Capable of operating above 1473 K (1200 °C);

Electron beam guns specially designed for the furnaces specified in 2B227.b. operating at a power greater than 50 kW.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B228 a.Note:

Rotor assembly equipment for assembly of gas centrifuge rotor tube sections, baffles, and end caps; 2B228.a. includes precision mandrels, clamps, and shrink fit machines.

b. Technical Note:

Rotor straightening equipment for alignment of gas centrifuge rotor tube sections to a common axis; In 2B228.b. such equipment normally consists of precision measuring probes linked to a computer that subsequently controls the action of, for example, pneumatic rams used for aligning the rotor tube sections.

c. Technical Note:

Bellows-forming mandrels and dies for producing single-convolution bellows. In 2B228.c. the bellows have all of the following characteristics:

1. Inside diameter between 75 mm and 650 mm;

2. Length equal to or greater than 12,7 mm;

3. Single convolution depth greater than 2 mm; and

4. Made of high-strength aluminium alloys, maraging steel or high strength fibrous or filamentary materials.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 a.

Pressure sensing elements made of or protected by aluminium, aluminium alloy, aluminium oxide (alumina or sapphire), nickel, nickel alloy with more than 60 % nickel by weight, or fully fluorinated hydrocarbon polymers;

Seals, if any, essential for sealing the pressure sensing element, and in direct contact with the process medium, made of or protected by aluminium, aluminium alloy, aluminium oxide (alumina or sapphire), nickel, nickel alloy with more than 60 % nickel by weight, or fully fluorinated hydrocarbon polymers; and

Having either of the following characteristics:

1. A full scale of less than 13 kPa and an 'accuracy' of better than 1 % of full-scale; or

2. A full scale of 13 kPa or greater and an 'accuracy' of better than 130 Pa when measured at 13 kPa.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 a.

Input throat size equal to or greater than 380 mm;

Pumping speed equal to or greater than 15 m3/s; and

Capable of producing an ultimate vacuum better than 13 mPa.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B. a.

Capable of an inlet volume flow rate of 50 m3/h or greater;

Capable of a pressure ratio of 2:1 or greater; and

Having all surfaces that come in contact with the process gas made from any of the following materials:

1. Aluminium or aluminium alloy;

2. Aluminium oxide;

3. Stainless steel;

4. Nickel or nickel alloy;

5. Phosphor bronze; or

6. Fluoropolymers.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350 a.N.B.

Reaction vessels or reactors, with or without agitators, with total internal (geometric) volume greater than 0,1 m3 (100 litres) and less than 20 m3 (20000 litres), where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials: For prefabricated repair assemblies, see 2B350.k.

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coating or glass lining);

4. Nickel or 'alloys' with more than 40 % nickel by weight;

5. Tantalum or tantalum 'alloys';

6. Titanium or titanium 'alloys';

7. Zirconium or zirconium 'alloys'; or

8. Niobium (columbium) or niobium 'alloys';

Agitators designed for use in reaction vessels or reactors specified in 2B350.a.; and impellers, blades or shafts designed for such agitators, where all surfaces of the agitator that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Nickel or 'alloys' with more than 40 % nickel by weight;

5. Tantalum or tantalum 'alloys';

6. Titanium or titanium 'alloys';

7. Zirconium or zirconium 'alloys'; or

8. Niobium (columbium) or niobium 'alloys';

c.N.B.

Storage tanks, containers or receivers with a total internal (geometric) volume greater than 0,1 m3 (100 litres) where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials: For prefabricated repair assemblies, see 2B350.k.

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Nickel or 'alloys' with more than 40 % nickel by weight;

5. Tantalum or tantalum 'alloys';

6. Titanium or titanium 'alloys';

7. Zirconium or zirconium 'alloys'; or

8. Niobium (columbium) or niobium 'alloys';

Heat exchangers or condensers with a heat transfer surface area greater than 0,15 m2, and less than 20 m2; and tubes, plates, coils or blocks (cores) designed for such heat exchangers or condensers, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or 'carbon graphite';

5. Nickel or 'alloys' with more than 40 % nickel by weight;

6. Tantalum or tantalum 'alloys';

7. Titanium or titanium 'alloys';

8. Zirconium or zirconium 'alloys';

9. Silicon carbide;

10. Titanium carbide; or

11. Niobium (columbium) or niobium 'alloys';

Distillation or absorption columns of internal diameter greater than 0,1 m; and liquid distributors, vapour distributors or liquid collectors designed for such distillation or absorption columns, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or 'carbon graphite';

5. Nickel or 'alloys' with more than 40 % nickel by weight;

6. Tantalum or tantalum 'alloys';

7. Titanium or titanium 'alloys';

8. Zirconium or zirconium 'alloys'; or

9. Niobium (columbium) or niobium 'alloys';

Remotely operated filling equipment in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight; or

2. Nickel or 'alloys' with more than 40 % nickel by weight;

g. Technical Notes: 1.2.3.

Valves and components, as follows: For the purposes of 2B350.g., 'corrosion resistant materials' means any of the following materials: The 'nominal size' is defined as the smaller of the inlet and outlet diameters. Nominal sizes (DN) of valves are in accordance with ISO 6708:1995. Nominal Pipe Sizes (NPS) are in accordance with ASME B36.10 or B36.19 or national equivalents.

1. Valves, having both of the following:

1. a.

A 'nominal size' greater than DN 10 or NPS 3/8; and

All surfaces that come in direct contact with the chemical(s) being produced, processed, or contained are made from 'corrosion resistant materials';

2. Valves, other than those specified in 2B350.g.1., having all of the following;

2. a.

A 'nominal size' equal to or greater than DN 25 or NPS 1 and equal to or less than DN 100 or NPS 4;

Casings (valve bodies) or preformed casing liners;

A closure element designed to be interchangeable; and

All surfaces of the casing (valve body) or preformed case liner that come in direct contact with the chemical(s) being produced, processed, or contained are made from 'corrosion resistant materials';

3. Components, designed for valves specified in 2B350.g.1. or 2B350.g.2., in which all surfaces that come in direct contact with the chemical(s) being produced, processed, or contained are made from 'corrosion resistant materials', as follows:

3. a.

Casings (valve bodies);

Preformed casing liners;

g. Technical Notes: 1.

a.

Nickel or alloys with more than 40 % nickel by weight;

b.

Alloys with more than 25 % nickel and 20 % chromium by weight;

c.

Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

d.

Glass or glass-lined (including vitrified or enamelled coating);

e.

Tantalum or tantalum alloys;

f.

Titanium or titanium alloys;

g.

Zirconium or zirconium alloys;

h.

Niobium (columbium) or niobium alloys; or

i.

Ceramic materials as follows:

1. Silicon carbide with a purity of 80 % or more by weight;

2. Aluminium oxide (alumina) with a purity of 99,9 % or more by weight;

3. Zirconium oxide (zirconia).

Multi-walled piping incorporating a leak detection port, in which all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight;

2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

3. Glass (including vitrified or enamelled coatings or glass lining);

4. Graphite or 'carbon graphite';

5. Nickel or 'alloys' with more than 40 % nickel by weight;

6. Tantalum or tantalum 'alloys';

7. Titanium or titanium 'alloys';

8. Zirconium or zirconium 'alloys'; or

9. Niobium (columbium) or niobium 'alloys';

i. Technical Note:

Multiple-seal and seal-less pumps, with manufacturer's specified maximum flow-rate greater than 0,6 m3/hour, or vacuum pumps with manufacturer's specified maximum flow-rate greater than 5 m3/hour (under standard temperature (273 K (0 °C)) and pressure (101,3 kPa) conditions), other than those specified in 2B233; and casings (pump bodies), preformed casing liners, impellers, rotors or jet pump nozzles designed for such pumps, in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials: In 2B350.i., the term seal refers to only those seals that come into direct contact with the chemical(s) being processed (or are designed to), and provide a sealing function where a rotary or reciprocating drive shaft passes through a pump body.

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight;

2. Ceramics;

3. Ferrosilicon (high silicon iron alloys);

4. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

5. Glass (including vitrified or enamelled coatings or glass lining);

6. Graphite or 'carbon graphite';

7. Nickel or 'alloys' with more than 40 % nickel by weight;

8. Tantalum or tantalum 'alloys';

9. Titanium or titanium 'alloys';

10. Zirconium or zirconium 'alloys'; or

11. Niobium (columbium) or niobium 'alloys';

Incinerators designed to destroy chemicals specified in entry 1C350, having specially designed waste supply systems, special handling facilities and an average combustion chamber temperature greater than 1273 K (1000 °C), in which all surfaces in the waste supply system that come into direct contact with the waste products are made from or lined with any of the following materials:

1. 'Alloys' with more than 25 % nickel and 20 % chromium by weight;

2. Ceramics; or

3. Nickel or 'alloys' with more than 40 % nickel by weight;

Prefabricated repair assemblies having metallic surfaces that come in direct contact with the chemical(s) being processed which are made from tantalum or tantalum alloys as follows, and specially designed components therefor:

1. Designed for mechanical attachment to glass-lined reaction vessels or reactors specified in 2B350.a.; or

2. Designed for mechanical attachment to glass-lined storage tanks, containers or receivers specified in 2B350.c.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350Note: Technical Notes: 1.2.2B351 a. Technical Note:

Designed for continuous operation and usable for the detection of chemical warfare agents or chemicals specified in 1C350 with a minimum detection limit of less than 0,3 mg/m3; or The minimum detection limit of toxic gas monitors or monitoring systems is the lowest detectable concentration of the analyte required to produce a signal greater than three times the standard deviation of the toxic gas monitor’s or monitoring system’s signal when measuring a blank sample. In the case of toxic gas monitors or monitoring systems having a deadband or programmed zero suppression, the minimum detection limit is the lowest detectable concentration required to produce a reading.

Designed for the detection of cholinesterase-inhibiting activity.

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350Note: Technical Notes: 1.2.2B3512B352 a.

Containment facilities and related equipment as follows:

1. Complete containment facilities that meet the criteria for P3 or P4 (BL3, BL4, L3, L4) containment as specified in the WHO Laboratory Biosafety Manual (3rd edition, Geneva, 2004);

2. Equipment designed for fixed installation in containment facilities specified in 2B352.a., as follows:

2. a.

Double-door pass-through decontamination autoclaves;

Breathing air suit decontamination showers;

Mechanical-seal or inflatable-seal walkthrough doors;

b. Technical Notes: 1.2.

Fermenters and components as follows: For the purposes of 2B352.b. fermenters include bioreactors, single-use (disposable) bioreactors, chemostats and continuous-flow systems. For the purposes of 2B352.b. cultivation chamber holding devices include single-use cultivation chambers with rigid walls.

1. Fermenters capable of cultivation of microorganisms or of live cells for the production of viruses or toxins, without the propagation of aerosols, having a total internal volume of 20 litres or more;

2. Components designed for fermenters specified in 2B352.b.1. as follows:

2. a.

Cultivation chambers designed to be sterilised or disinfected in situ;

Cultivation chamber holding devices;

Process control units capable of simultaneously monitoring and controlling two or more fermentation system parameters (e.g., temperature, pH, nutrients, agitation, dissolved oxygen, air flow, foam control);

c. Technical Note:

Centrifugal separators capable of continuous separation, without the propagation of aerosols, having a flow rate greater than 100 litres per hour, as follows: Centrifugal separators and single-use centrifugal separators include decanters.

1. Centrifugal separators having all of the following characteristics:

1. a.

One or more sealing joints within the steam containment area;

Components of polished stainless steel or titanium;

Capable of in-situ steam sterilisation in a closed state.

2. Single-use centrifugal separators, in which all components that come in direct contact with the substances being processed are disposable or single-use.

Cross (tangential) flow filtration equipment and components as follows:

1. Cross (tangential) flow filtration equipment capable of separation of microorganisms, viruses, toxins or cell cultures having all of the following characteristics:

1. a.

A total filtration area equal to or greater than 1 m2; and

b. Technical Note: Note:

Having any of the following characteristics: In 2B352.d.1.b. sterilised denotes the elimination of all viable microbes from the equipment through the use of either physical (e.g. steam) or chemical agents. Disinfected denotes a process to reduce the number of microorganisms but not usually of bacterial spores, through the use of chemical agents, without necessarily killing or removing all organisms. 2B352.d. does not control reverse osmosis and hemodialysis equipment, as specified by the manufacturer.

1. Capable of being sterilised or disinfected in-situ; or

2. Using disposable or single-use filtration components;

2. Cross (tangential) flow filtration components (e.g. modules, elements, cassettes, cartridges, units or plates) with filtration area equal to or greater than 0,2 m2 for each component and designed for use in cross (tangential) flow filtration equipment specified in 2B352.d.;

Steam, gas or vapour sterilisable freeze-drying equipment with a condenser capacity of 10 kg of ice or more in 24 hours and less than 1000 kg of ice in 24 hours;

Protective and containment equipment, as follows:

1.Note: Protective full or half suits, or hoods dependent upon a tethered external air supply and operating under positive pressure; 2B352.f.1. does not control suits designed to be worn with self-contained breathing apparatus.

2.Note 1:Note 2:

Biocontainment chambers, isolators, or biological safety cabinets having all of the following characteristics, for normal operation: 2B352.f.2. includes Class III biosafety cabinets, as described in the latest edition of the WHO Laboratory Biosafety Manual or constructed in accordance with national standards, regulations or guidance. 2B352.f.2. includes any isolator meeting all of the above mentioned characteristics, regardless of its intended use and its designation, except for medical isolators specially designed for barrier nursing or transportation of infected patients.

2. a.

Fully enclosed workspace where the operator is separated from the work by a physical barrier;

Able to operate at negative pressure;

Means to safely manipulate items in the workspace;

Supply and exhaust air to and from the workspace is HEPA filtered;

Aerosol inhalation equipment designed for aerosol challenge testing with microorganisms, viruses or toxins as follows:

1. Whole-body exposure chambers having a capacity of 1 m3 or more;

2. Nose-only exposure apparatus utilising directed aerosol flow and having capacity for exposure of any of the following:

2. a.

12 or more rodents; or

2 or more animals other than rodents;

3. Closed animal restraint tubes designed for use with nose-only exposure apparatus utilising directed aerosol flow;

Spray drying equipment capable of drying toxins or pathogenic microorganisms having all of the following:

1. A water evaporation capacity of ≥ 0,4 kg/h and ≤ 400 kg/h;

2. The ability to generate a typical mean product particle size of ≤10 μm with existing fittings or by minimal modification of the spray-dryer with atomisation nozzles enabling generation of the required particle size; and

3. Capable of being sterilised or disinfected in situ;

Nucleic acid assemblers and synthesisers, which are partly or entirely automated, and designed to generate continuous nucleic acids greater than 1,5 kilobases in length with error rates less than 5 % in a single run.

j. Technical Note:

Peptide synthesizers that are partly or entirely automated and capable of generating peptides at a 'system synthesis scale' of 1 mmol or greater. 'System synthesis scale' denotes the maximum amount of peptide (mmol) that can be produced by the instrument using the largest compatible reaction vessels (L). For multiple peptides produced in parallel, this is the sum of the largest compatible reaction vessels (L).

2B Technical Notes: 1.2.3.4.5.6.7.2B001N.B.Note 1:Note 2:Note 3:Note 4:N.B.2B002 Technical Notes: 1.2.3.4.5.2B0032B004N.B. Technical Note: N.B.2B005Note:2B006Note:2B007N.B.2B0082B009N.B. Technical Note: 2B104N.B.2B1052B109N.B. Technical Note: 2B116 Technical Note: 2B1172B119N.B.2B120Note 1:Note 2:2B121Note:2B122Note:2B201 Technical Note: Note 1:Note 2:Note 3:2B204 Technical Note: 2B206Note 1:Note 2: Technical Notes: 2B2072B209Note:2B2192B225 Technical Note: 2B226N.B.2B2272B2282B230 Technical Notes: 1.2.2B231 Technical Notes: 1.2.2B232N.B.2B233N.B.2B350Note: Technical Notes: 1.2.2B3512B352N.B.2B510 a.

Having at least one of the following consolidation sources:

1. Laser;

2. Electron beam; or

3. Electric arc;

Having a controlled process atmosphere of any of the following:

1. Inert gas; or

2. Vacuum (equal to or less than 100 Pa);

Having any of the following 'in-process monitoring' equipment in a 'co-axial configuration' or 'paraxial configuration':

1. Imaging camera with a peak response in the wavelength range exceeding 380 nm but not exceeding 14000 nm;

2. Pyrometer designed to measure temperatures greater than 1273,15 K (1000 °C); or

3. Radiometer or spectrometer with a peak response in the wavelength range exceeding 380 nm but not exceeding 3000 nm; and

A closed loop control system designed to modify the consolidation source parameters, build path, or equipment settings during the build cycle in response to feedback from in-process monitoring equipment specified in 2B510.c.

2C Materials None.

2D2D001Note:2D002Note 1:Note 2:Note 3:2D0032D101N.B.2D2012D202Note:2D3512D352

Software Software, other than that specified in 2D002, as follows: 2D001 does not control part programming software that generates numerical control codes for machining various parts. Software for electronic devices, even when residing in an electronic device or system, enabling such devices or systems to function as a numerical control unit, capable of co-ordinating simultaneously more than four axes for contouring control. 2D002 does not control software specially designed or modified for the operation of items not specified in Category 2. 2D002 does not control software for items specified in 2B002. For software for items specified in 2B002, see 2D001 and 2D003. 2D002 does not control software that is exported with, and the minimum necessary for the operation of, items not specified in Category 2. Software, designed or modified for the operation of equipment specified in 2B002, that converts optical design, workpiece measurements and material removal functions into numerical control commands to achieve the desired workpiece form. Software specially designed or modified for the use of equipment specified in 2B104, 2B105, 2B109, 2B116, 2B117 or 2B119 to 2B122. SEE ALSO 9D004. Software specially designed for the use of equipment specified in 2B204, 2B206, 2B207, 2B209, 2B219 or 2B227. Software specially designed or modified for the development, production or use of equipment specified in 2B201. 2D202 does not control part programming software that generates numerical control command codes but does not allow direct use of equipment for machining various parts. Software, other than that specified in 1D003, specially designed for use of equipment specified in 2B351. Software specially designed for nucleic acid assemblers and synthesisers specified in 2B352.i., that is capable of designing and building functional genetic elements from digital sequence data.

2D2D001 a.

Software specially designed or modified for the development or production of equipment specified in 2A001, 2B001 to 2B009 or 2B510

Software specially designed or modified for the use of equipment specified in 2A001.c., 2B001 or 2B003 to 2B009.

2E2E001Note:2E0022E0032E1012E2012E3012E503 Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Deposition techniques

Technology Technology according to the General Technology Note for the development of equipment or software specified in 2A, 2B or 2D. 2E001 includes technology for the integration of probe systems into Coordinate Measuring Machines (CMM) specified in 2B006.a. Technology according to the General Technology Note for the production of equipment specified in 2A or 2B. Other technology, as follows: Technology according to the General Technology Note for the use of equipment or software specified in 2B004, 2B009, 2B104, 2B109, 2B116, 2B119 to 2B122 or 2D101. Technology according to the General Technology Note for the use of equipment or software specified in 2A225, 2A226, 2B001, 2B006, 2B007.b., 2B007.c., 2B008, 2B009, 2B201, 2B204, 2B206, 2B207, 2B209, 2B225 to 2B233, 2D201 or 2D202. Technology according to the General Technology Note for the use of goods specified in 2B350 to 2B352. technology, as follows: Coating Process (1) Substrate Resultant Coating Chemical Vapour Deposition (CVD) Superalloys Aluminides for internal passages Ceramics (19) and Low expansion glasses (14) Silicides Carbides Dielectric layers (15) Diamond Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Aluminides Alloyed aluminides (2) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Diamond Diamond-like carbon (17) Sensor window materials (9) Dielectric layers (15) Diamond Diamond-like carbon (17) Thermal-Evaporation Physical Vapour Deposition (TE-PVD) Physical Vapour Deposition (PVD): Electron-Beam (EB-PVD) Superalloys Alloyed silicides Alloyed aluminides (2) MCrAlX (5) Modified zirconia (12) Silicides Aluminides Mixtures thereof (4) Ceramics (19) and Low expansion glasses (14) Dielectric layers (15) Corrosion resistant steel (7) MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Borides Beryllium Sensor window materials (9) Dielectric layers (15) Titanium alloys (13) Borides Nitrides Ion assisted resistive heating Physical Vapour Deposition (PVD) (Ion Plating) Ceramics (19) and Low-expansion glasses Dielectric layers (15) Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrix composites Dielectric layers (15) Cemented tungsten carbide (16), Silicon carbide Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Sensor window materials (9) Dielectric layers (15) Diamond-like carbon (17) Physical Vapour Deposition (PVD): Laser Vaporization Ceramics (19) and Low expansion glasses (14) Silicides Dielectric layers (15) Diamond-like carbon (17) Carbon-carbon, Ceramic and Metal matrix composites Dielectric layers (15) Cemented tungsten carbide (16), Silicon carbide Dielectric layers (15) Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Dielectric layers (15) Sensor window materials (9) Dielectric layers (15) Diamond-like carbon (17) Physical Vapour Deposition (PVD): Cathodic Arc Discharge Superalloys Alloyed silicides Alloyed aluminides (2) MCrAlX (5) Polymers (11) and Organic matrix composites Borides Carbides Nitrides Diamond-like carbon (17) Pack cementation (see A above for out-of-pack cementation) (10) Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Mixtures thereof (4) Titanium alloys (13) Silicides Aluminides Alloyed aluminides (2) Refractory metals and alloys (8) Silicides Oxides Plasma spraying Superalloys MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Alloyed aluminides (2) Aluminium alloys (6) MCrAlX (5) Modified zirconia (12) Silicides Mixtures thereof (4) Refractory metals and alloys (8) Aluminides Silicides Carbides Corrosion resistant steel (7) MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Titanium alloys (13) Carbides Aluminides Silicides Alloyed aluminides (2) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Slurry Deposition Refractory metals and alloys (8) Fused silicides Fused aluminides except for resistance heating elements Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Mixtures thereof (4) Sputter Deposition Superalloys Alloyed silicides Alloyed aluminides (2) Noble metal modified aluminides (3) MCrAlX (5) Modified zirconia (12) Platinum Mixtures thereof (4) Ceramics and Low- expansion glasses (14) Silicides Platinum Mixtures thereof (4) Dielectic layers (15) Diamond-like carbon (17) Titanium alloys (13) Borides Nitrides Oxides Silicides Aluminides Alloyed aluminides (2) Carbides Carbon-carbon, Ceramic and Metal matrix composites Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride Cemented tungsten carbide (16), Silicon carbide (18) Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Boron nitride Molybdenum and Molybdenum alloys Dielectric layers (15) Beryllium and Beryllium alloys Borides Dielectric layers (15) Beryllium Sensor window materials (9) Dielectric layers (15) Diamond-like carbon (17) Refractory metals and alloys (8) Aluminides Silicides Oxides Carbides Ion Implantation High temperature bearing steels Additions of Chromium Tantalum or Niobium (Columbium) Titanium alloys (13) Borides Nitrides Beryllium and Beryllium alloys Borides Cemented tungsten carbide (16) Carbides Nitrides

2E2E001Note:2E0022E003 a.

Not used;

b.N.B.

Technology for metal-working manufacturing processes, as follows: For technology for metal-working manufacturing processes for gas turbine engines and components, see 9E003 and the Military Goods Controls.

1. Technology for the design of tools, dies or fixtures specially designed for any of the following processes:

1. a.

Superplastic forming;

Diffusion bonding; or

c. Technical Note:

'Direct-acting hydraulic pressing'; For the purposes of 2E003.b.1.c., 'direct-acting hydraulic pressing' is a deformation process which uses a fluid-filled flexible bladder in direct contact with the workpiece.

2. Not used;

Technology for the development or production of hydraulic stretch-forming machines and dies therefor, for the manufacture of airframe structures;

Not used;

Technology for the development of integration software for incorporation of expert systems for advanced decision support of shop floor operations into numerical control units;

f.Note:N.B.

Technology for the application of inorganic overlay coatings or inorganic surface modification coatings (specified in column 3 of the following table) to non-electronic substrates (specified in column 2 of the following table), by processes specified in column 1 of the following table and defined in the Technical Note. The table and Technical Note appear after entry 2E301. This table should be read to specify the technology for a particular Coating Process only when the Resultant Coating in column 3 is in a paragraph directly across from the relevant Substrate under column 2. For example, Chemical Vapour Deposition (CVD) coating process technical data are included for the application of silicides to carbon-carbon, ceramic and metal matrix composites substrates, but are not included for the application of silicides to 'cemented tungsten carbide' (16), 'silicon carbide' (18) substrates. In the second case, the resultant coating is not listed in the paragraph under column 3 directly across from the paragraph under column 2 listing 'cemented tungsten carbide' (16), 'silicon carbide' (18).

2E2E001Note:2E0022E0032E1012E2012E3012E503 g. Technical Note:

Technology, not specified elsewhere, for the development or production of 'coating systems' having all of the following: For the purposes of 2E503g, 'coating systems' consist of one or more layers (e.g., bond, interlayer, top coat) of material deposited on the substrate.

1. Designed to protect ceramic matrix composite materials specified by 1C007 from corrosion; and

2. Designed to operate at temperatures exceeding 1373,15 K (1100 °C).

2E2E001Note:2E0022E0032E1012E2012E3012E503 Table 1.2.3.A.B.B.1.B.2.B.3.B.4.C.D.E.F.G. Deposition techniques TABLE - DEPOSITION TECHNIQUES - NOTES 1.2.3.4.5.6.7.8.9.10.11.12.13.14.15.16.17.18.19.

The term 'coating process' includes coating repair and refurbishing as well as original coating. The term 'alloyed aluminide coating' includes single or multiple-step coatings in which an element or elements are deposited prior to or during application of the aluminide coating, even if these elements are deposited by another coating process. It does not, however, include the multiple use of single-step pack cementation processes to achieve alloyed aluminides. The term 'noble metal modified aluminide' coating includes multiple-step coatings in which the noble metal or noble metals are laid down by some other coating process prior to application of the aluminide coating. The term 'mixtures thereof' includes infiltrated material, graded compositions, co-deposits and multilayer deposits and are obtained by one or more of the coating processes specified in the Table. 'MCrAlX' refers to a coating alloy where M equals cobalt, iron, nickel or combinations thereof and X equals hafnium, yttrium, silicon, tantalum in any amount or other intentional additions over 0,01 % by weight in various proportions and combinations, except: The term 'aluminium alloys' refers to alloys having an ultimate tensile strength of 190 MPa or more measured at 293 K (20 °C). The term 'corrosion resistant steel' refers to AISI (American Iron and Steel Institute) 300 series or equivalent national standard steels. 'Refractory metals and alloys' include the following metals and their alloys: niobium (columbium), molybdenum, tungsten and tantalum.. 'Sensor window materials', as follows: alumina, silicon, germanium, zinc sulphide, zinc selenide, gallium arsenide, diamond, gallium phosphide, sapphire and the following metal halides: sensor window materials of more than 40 mm diameter for zirconium fluoride and hafnium fluoride. Category 2 does not include technology for single-step pack cementation of solid aerofoils. 'Polymers', as follows: polyimide, polyester, polysulphide, polycarbonates and polyurethanes. 'Modified zirconia' refers to additions of other metal oxides (e.g., calcia, magnesia, yttria, hafnia, rare earth oxides) to zirconia in order to stabilise certain crystallographic phases and phase compositions. Thermal barrier coatings made of zirconia, modified with calcia or magnesia by mixing or fusion, are not controlled. 'Titanium alloys' refers only to aerospace alloys having an ultimate tensile strength of 900 MPa or more measured at 293 K (20 °C). 'Low-expansion glasses' refers to glasses which have a coefficient of thermal expansion of 1 × 10-7 K-1 or less measured at 293 K (20 °C). 'Dielectric layers' are coatings constructed of multi-layers of insulator materials in which the interference properties of a design composed of materials of various refractive indices are used to reflect, transmit or absorb various wavelength bands. Dielectric layers refers to more than four dielectric layers or dielectric/metal composite layers. 'Cemented tungsten carbide' does not include cutting and forming tool materials consisting of tungsten carbide/(cobalt, nickel), titanium carbide/(cobalt, nickel), chromium carbide/nickel-chromium and chromium carbide/nickel. Technology for depositing diamond-like carbon on any of the following is not controlled: magnetic disk drives and heads, equipment for the manufacture of disposables, valves for faucets, acoustic diaphragms for speakers, engine parts for automobiles, cutting tools, punching-pressing dies, office automation equipment, microphones or medical devices or moulds, for casting or moulding of plastics, manufactured from alloys containing less than 5 % beryllium. 'Silicon carbide' does not include cutting and forming tool materials. Ceramic substrates, as used in this entry, does not include ceramic materials containing 5 % by weight, or greater, clay or cement content, either as separate constituents or in combination.

TABLE - DEPOSITION TECHNIQUES - NOTES 1.2.3.4.5.

a.

CoCrAlY coatings which contain less than 22 % by weight of chromium, less than 7 % by weight of aluminium and less than 2 % by weight of yttrium;

b.

CoCrAlY coatings which contain 22 to 24 % by weight of chromium, 10 to 12 % by weight of aluminium and 0,5 to 0,7 % by weight of yttrium; or

c.

NiCrAlY coatings which contain 21 to 23 % by weight of chromium, 10 to 12 % by weight of aluminium and 0,9 to 1,1 % by weight of yttrium.

TABLE - DEPOSITION TECHNIQUES - TECHNICAL NOTE

Processes specified in Column 1 of the Table are defined as follows:

a.N.B.1.N.B.2.N.B.3.

Chemical Vapour Deposition (CVD) is an overlay coating or surface modification coating process wherein a metal, alloy, composite, dielectric or ceramic is deposited upon a heated substrate. Gaseous reactants are decomposed or combined in the vicinity of a substrate resulting in the deposition of the desired elemental, alloy or compound material on the substrate. Energy for this decomposition or chemical reaction process may be provided by the heat of the substrate, a glow discharge plasma, or laser irradiation. CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, controlled nucleation thermal deposition (CNTD), plasma enhanced or plasma assisted CVD processes. Pack denotes a substrate immersed in a powder mixture. The gaseous reactants used in the out-of-pack process are produced using the same basic reactions and parameters as the pack cementation process, except that the substrate to be coated is not in contact with the powder mixture.

b.

Thermal Evaporation-Physical Vapour Deposition (TE-PVD) is an overlay coating process conducted in a vacuum with a pressure less than 0,1 Pa wherein a source of thermal energy is used to vaporize the coating material. This process results in the condensation, or deposition, of the evaporated species onto appropriately positioned substrates. The addition of gases to the vacuum chamber during the coating process to synthesise compound coatings is an ordinary modification of the process. The use of ion or electron beams, or plasma, to activate or assist the coating's deposition is also a common modification in this technique. The use of monitors to provide in-process measurement of optical characteristics and thickness of coatings can be a feature of these processes. Specific TE-PVD processes are as follows:

1. Electron Beam PVD uses an electron beam to heat and evaporate the material which forms the coating;

2. Ion Assisted Resistive Heating PVD employs electrically resistive heating sources in combination with impinging ion beam(s) to produce a controlled and uniform flux of evaporated coating species;

3. Laser Vaporization uses either pulsed or continuous wave laser beams to vaporize the material which forms the coating;

4.N.B. Cathodic Arc Deposition employs a consumable cathode of the material which forms the coating and has an arc discharge established on the surface by a momentary contact of a ground trigger. Controlled motion of arcing erodes the cathode surface creating a highly ionised plasma. The anode can be either a cone attached to the periphery of the cathode, through an insulator, or the chamber. Substrate biasing is used for non line-of-sight deposition; This definition does not include random cathodic arc deposition with non-biased substrates.

5. Ion Plating is a special modification of a general TE-PVD process in which a plasma or an ion source is used to ionise the species to be deposited, and a negative bias is applied to the substrate in order to facilitate the extraction of the species from the plasma. The introduction of reactive species, evaporation of solids within the process chamber, and the use of monitors to provide in-process measurement of optical characteristics and thicknesses of coatings are ordinary modifications of the process.

c.

Pack Cementation is a surface modification coating or overlay coating process wherein a substrate is immersed in a powder mixture (a pack), that consists of: The substrate and powder mixture is contained within a retort which is heated to between 1030 K (757 °C) and 1375 K (1102 °C) for sufficient time to deposit the coating.

1. The metallic powders that are to be deposited (usually aluminium, chromium, silicon or combinations thereof);

2. An activator (normally a halide salt); and

3. An inert powder, most frequently alumina.

d.N.B.1.N.B.2.

Plasma Spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed. Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying. Low pressure means less than ambient atmospheric pressure. High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20 °C) at 0,1 MPa.

e.

Slurry Deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating.

f.N.B.1.N.B.2.

Sputter Deposition is an overlay coating process based on a momentum transfer phenomenon, wherein positive ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on an appropriately positioned substrate. The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials. Low-energy ion beams (less than 5 keV) can be used to activate the deposition.

g.

Ion Implantation is a surface modification coating process in which the element to be alloyed is ionised, accelerated through a potential gradient and implanted into the surface region of the substrate. This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition.

PART V Category 3

CATEGORY 3 ELECTRONICS

3ANote 1:Note 2:N.B.Note 3:3A001

a.Note: Technical Notes:

General purpose integrated circuits, as follows: Integrated circuits include the following types: For the purposes of 3A001.a.:

Monolithic integrated circuits;

Hybrid integrated circuits;

Multichip integrated circuits;

'Film type integrated circuit', including silicon-on-sapphire integrated circuits;

Optical integrated circuits;

'Three dimensional integrated circuit';

Monolithic Microwave Integrated Circuits (MMICs).

1. 'Film type integrated circuit' is an array of circuit elements and metallic interconnections formed by deposition of a thick or thin film on an insulating substrate.

2. 'Three dimensional integrated circuit' is a collection of semiconductor dies or active device layers, integrated together, and having through semiconductor via connections passing completely through an interposer, substrate, die or layer to establish interconnections between the device layers. An interposer is an interface that enables electrical connections.

1. Integrated circuits designed or rated as radiation hardened to withstand any of the following:

1. a.

A total dose of 5 × 103 Gy (silicon) or higher;

A dose rate upset of 5 × 106 Gy (silicon)/s or higher; or

c.Note:

A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1013 n/cm2 or higher on silicon, or its equivalent for other materials; 3A001.a.1.c. does not control Metal Insulator Semiconductors (MIS).

2.Note: Technical Note: N.B.

Microprocessor microcircuits, microcomputer microcircuits, microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, Analogue-to-Digital Converters (ADCs), integrated circuits that contain ADCs and store or process the digitised data, Digital-to-Analogue Converters (DACs), electro-optical or optical integrated circuits designed for signal processing, field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, Static Random-Access Memories (SRAMs), or 'non-volatile memories', having any of the following: 3A001.a.2. does not control integrated circuits designed for civil automobiles or railway train applications. For the purposes of 3A001.a.2., 'non-volatile memories' are memories with data retention over a period of time after a power shutdown. For cryogenic CMOS integrated circuits not specified in 3A001.a.2., see 3A501.a.15.

2. a.

Rated for operation at an ambient temperature above 398 K (125 °C);

Rated for operation at an ambient temperature below 218 K (-55 °C); or

Rated for operation over the entire ambient temperature range from 218 K (-55 °C) to 398 K (125 °C);

3.Note: Microprocessor microcircuits, microcomputer microcircuits and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; 3A001.a.3. includes digital signal processors, digital array processors and digital coprocessors.

4. Not used;

5. Technical Notes:

Analogue-to-Digital Converter (ADC) and Digital-to-Analogue Converter (DAC) integrated circuits, as follows: For the purposes of 3A001.a.5.b.:

5. a.N.B.N.B. Technical Notes:

ADCs having any of the following: SEE ALSO 3A101 For integrated circuits that contain ADCsand store or process the digitised data, see 3A001.a.14. For the purposes of 3A001.a.5.a.:

a.N.B.

1. A resolution of 8 bit or more, but less than 10 bit, with a sample rate greater than 1,3 Giga Samples Per Second (GSPS);

2. A resolution of 10 bit or more, but less than 12 bit, with a sample rate greater than 600 Mega Samples Per Second (MSPS);

3. A resolution of 12 bit or more, but less than 14 bit, with a sample rate greater than 400 MSPS;

4. A resolution of 14 bit or more, but less than 16 bit, with a sample rate greater than 250 MSPS; or

5. A resolution of 16 bit or more with a sample rate greater than 65 MSPS;

a.N.B.N.B. Technical Notes:

1. A resolution of n bit corresponds to a quantisation of 2n levels.

2. The resolution of the ADC is the number of bits of the digital output that represents the measured analogue input. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC.

3. For multiple channel ADCs, the sample rate is not aggregated and the sample rate is the maximum rate of any single channel.

4. For interleaved ADCs or for multiple channel ADCs that are specified to have an interleaved mode of operation, the sample rates are aggregated and the sample rate is the maximum combined total rate of all of the interleaved channels.

DACs having any of the following:

1. A resolution of 10 bit or more, but less than 12 bit, with an 'adjusted update rate' exceeding 3500 MSPS; or

2. A resolution of 12 bit or more and having any of the following:

2. a.

An 'adjusted update rate' exceeding 1250 MSPS but not exceeding 3500 MSPS, and having any of the following:

1. A settling time less than 9 ns to arrive at or within 0,024 % of full scale from a full scale step; or

2. A 'Spurious Free Dynamic Range' (SFDR) greater than 68 dBc (carrier) when synthesising a full scale analogue signal of 100 MHz or the highest full scale analogue signal frequency specified below 100 MHz; or

An 'adjusted update rate' exceeding 3500 MSPS;

5. Technical Notes:

1. 'Spurious Free Dynamic Range' (SFDR) is defined as the ratio of the RMS value of the carrier frequency (maximum signal component) at the input of the DAC to the RMS value of the next largest noise or harmonic distortion component at its output.

2. SFDR is determined directly from the specification table or from the characterisation plots of SFDR versus frequency.

3. A signal is defined to be full scale when its amplitude is greater than -3 dBfs (full scale).

4. 'Adjusted update rate' for DACs:

4. a.

For conventional (non-interpolating) DACs, the 'adjusted update rate' is the rate at which the digital signal is converted to an analogue signal and the output analogue values are changed by the DAC. For DACs where the interpolation mode may be bypassed (interpolation factor of one), the DAC should be considered as a conventional (non-interpolating) DAC.

For interpolating DACs (oversampling DACs), the 'adjusted update rate' is defined as the DAC update rate divided by the smallest interpolating factor. For interpolating DACs, the 'adjusted update rate' may be referred to by different terms including:

input data rate

input word rate

input sample rate

maximum total input bus rate

maximum DAC clock rate for DAC clock input.

6. Electro-optical and optical integrated circuits, designed for signal processing and having all of the following:

6. a.

One or more than one internal laser diode;

One or more than one internal light detecting element; and

Optical waveguides;

7.Note:N.B.1N.B.2 Technical Notes:

Field programmable logic devices having any of the following: 3A001.a.7. includes: For integrated circuits having field programmable logic devices that are combined with an ADC, see 3A001.a.14. For electronic assemblies, modules or equipment, containing one or more 'user configurable' Field Programmable Logic Devices (FPLDs), see 3A502.i. For the purposes of 3A001.a.7.:

7. a.

A maximum number of single-ended digital input/outputs of greater than 700; or

An 'aggregate one-way peak serial transceiver data rate' of 500 Gb/s or greater;

Complex Programmable Logic Devices (CPLDs);

Field Programmable Gate Arrays (FPGAs);

Field Programmable Logic Arrays (FPLAs);

Field Programmable Interconnects (FPICs).

7.Note:N.B.1N.B.2 Technical Notes:

1. Maximum number of digital input/outputs in 3A001.a.7.a. is also referred to as the maximum user input/outputs or maximum available input/outputs, whether the integrated circuit is packaged or bare die.

2. 'Aggregate one-way peak serial transceiver data rate' is the product of the peak serial one-way transceiver data rate times the number of transceivers on the FPGA.

8. Not used;

9.N.B. Neural network integrated circuits; For integrated circuits, having one or more digital processing units having a 'Total Processing Performance' ('TPP') of 6000 or more, see 3A501.a.16.

10. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:

10. a.

More than 1500 terminals;

A typical 'basic gate propagation delay time' of less than 0,02 ns; or

c. Technical Notes:

An operating frequency exceeding 3 GHz; For the purposes of 3A001.a.10.b.:

1. 'Basic gate propagation delay time' is the propagation delay time value corresponding to the basic gate used in a monolithic integrated circuit. For a 'family' of monolithic integrated circuits, this may be specified either as the propagation delay time per typical gate within the given 'family' or as the typical propagation delay time per gate within the given 'family'.

2. 'Basic gate propagation delay time' is not to be confused with the input/output delay time of a complex monolithic integrated circuit.

3. 'Family' consists of all integrated circuits to which all of the following are applied as their manufacturing methodology and specifications except their respective functions:

3. a.

The common hardware and software architecture;

The common design and process technology; and

The common basic characteristics.

11. Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having any of the following:

11. a.

An equivalent gate count of more than 3000 (2 input gates); or

A toggle frequency exceeding 1,2 GHz;

12. Technical Note:

Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N) /20480 ms, where N is the number of points; For the purposes of 3A001.a.12., when N is equal to 1024 points, the formula gives an execution time of 500 μs.

13. Technical Note:

Direct Digital Synthesizer (DDS) integrated circuits having any of the following: For the purposes of 3A001.a.13., the DAC clock frequency may be specified as the master clock frequency or the input clock frequency.

13. a.

A Digital-to-Analogue Converter (DAC) clock frequency of 3,5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or

A DAC clock frequency of 1,25 GHz or more and a DAC resolution of 12 bit or more;

14.N.B.1.N.B.2. Technical Notes:

Integrated circuits that perform or are programmable to perform all of the following: For ADC integrated circuits, see 3A001.a.5.a. For field programmable logic devices, see 3A001.a.7. For the purposes of 3A001.a.14.:

14. a.

Analogue-to-digital conversions meeting any of the following:

1. A resolution of 8 bit or more, but less than 10 bit, with a sample rate greater than 1,3 Giga Samples Per Second (GSPS);

2. A resolution of 10 bit or more, but less than 12 bit, with a sample rate greater than 1,0 GSPS;

3. A resolution of 12 bit or more, but less than 14 bit, with a sample rate greater than 1,0 GSPS;

4. A resolution of 14 bit or more, but less than 16 bit, with a sample rate greater than 400 Mega Samples Per Second (MSPS); or

5. A resolution of 16 bit or more with a sample rate greater than 180 MSPS; and

Any of the following:

1. Storage of digitised data; or

2. Processing of digitised data;

14.N.B.1.N.B.2. Technical Notes:

1. A resolution of n bit corresponds to a quantisation of 2 n levels.

2. The resolution of the ADC is the number of bits of the digital output of the ADC that represents the measured analogue input. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC.

3. For integrated circuits with non-interleaving multiple channel ADCs, the sample rate is not aggregated and the sample rate is the maximum rate of any single channel.

4. For integrated circuits with interleaved ADCs or with multiple channel ADCs that are specified to have an interleaved mode of operation, the sample rates are aggregated and the sample rate is the maximum combined total rate of all of the interleaved channels.

b. Technical Note:

Microwave or millimetre wave items as follows: For the purposes of 3A001.b., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output.

1:Note 2: Vacuum electronic devices and cathodes, as follows: 3A001.b.1. does not control vacuum electronic devices designed or rated for operation in any frequency band and having all of the following: 3A001.b.1. does not control non-space-qualified vacuum electronic devices having all of the following:

1.Note 1: a.

Does not exceed 31,8 GHz; and

Is allocated by the ITU for radio-communications services, but not for radio-determination.

1:Note 2: a.

An average output power equal to or less than 50 W; and

Designed or rated for operation in any frequency band and having all of the following:

1. Exceeds 31,8 GHz but does not exceed 43,5 GHz; and

2. Is allocated by the ITU for radio-communications services, but not for radio-determination.

Travelling-wave vacuum electronic devices, pulsed or continuous wave, as follows:

1. Devices operating at frequencies exceeding 31,8 GHz;

2. Devices having a cathode heater with a turn on time to rated RF power of less than 3 seconds;

3. Coupled cavity devices, or derivatives thereof, with a fractional bandwidth of more than 7 % or a peak power exceeding 2,5 kW;

4. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following:

4. a.

An instantaneous bandwidth of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5;

An instantaneous bandwidth of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1;

Being space-qualified; or

Having a gridded electron gun;

5. Devices with a fractional bandwidth greater than or equal to 10 %, with any of the following:

5. a.

An annular electron beam;

A non-axisymmetric electron beam; or

Multiple electron beams;

Crossed-field amplifier vacuum electronic devices with a gain of more than 17 dB;

Thermionic cathodes designed for vacuum electronic devices producing an emission current density at rated operating conditions exceeding 5 A/cm2 or a pulsed (non-continuous) current density at rated operating conditions exceeding 10 A/cm2;

d. Technical Note:

Vacuum electronic devices with the capability to operate in a 'dual mode'; For the purposes of 3A001.b.1.d., 'dual mode' means the vacuum electronic device beam current can be intentionally changed between continuous-wave and pulsed mode operation by use of a grid and produces a peak pulse output power greater than the continuous-wave output power.

2.N.B.Note 1:Note 2:Note 3:

Monolithic Microwave Integrated Circuits (MMIC) amplifiers that are any of the following: For MMIC amplifiers that have an integrated phase shifter, see 3A001.b.12. Not used. The control status of the MMIC whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.2.a. to 3A001.b.2.h., is determined by the lowest peak saturated power output threshold. Notes 1 and 2 in 3A mean that 3A001.b.2. does not control MMICs if they are specially designed for other applications, e.g., telecommunications, radar, automobiles.

2.N.B. a.

Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a fractional bandwidth greater than 15 %, and having any of the following:

1. A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2. A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a fractional bandwidth greater than 10 %, and having any of the following:

1. A peak saturated power output greater than 10 W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or

2. A peak saturated power output greater than 5 W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz;

Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a fractional bandwidth of greater than 10 %;

Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a fractional bandwidth of greater than 10 %;

Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a fractional bandwidth of greater than 10 %;

Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a fractional bandwidth of greater than 5 %; or

Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 90 GHz;

3.Note 1:Note 2:

Discrete microwave transistors that are any of the following: The control status of a transistor in 3A001.b.3.a. to 3A001.b.3.e. whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.3.a. to 3A001.b.3.e., is determined by the lowest peak saturated power output threshold. 3A001.b.3. includes bare dice, dice mounted on carriers, or dice mounted in packages. Some discrete transistors may also be referred to as power amplifiers, but the status of these discrete transistors is determined by 3A001.b.3.

3. a.

Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz and having any of the following:

1. A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2. A peak saturated power output greater than 205 W (53,12 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3. A peak saturated power output greater than 115 W (50,61 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4. A peak saturated power output greater than 60 W (47,78 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and having any of the following:

1. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz;

2. A peak saturated power output greater than 15 W (41,76 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz;

3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or

4. A peak saturated power output greater than 7 W (38,45 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz;

Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz;

Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 43,5 GHz; or

Other than those specified in 3A001.b.3.a. to 3A001.b.3.e and rated for operation with a peak saturated power output greater than 5 W (37,0 dBm) at all frequencies exceeding 8,5 GHz up to and including 31,8 GHz;

4.N.B.1.N.B.2.N.B.3.Note 1:Note 2:

Microwave solid-state amplifiers and microwave assemblies/modules containing microwave solid-state amplifiers, that are any of the following: For MMIC amplifiers, see 3A001.b.2. For 'transmit/receive modules' and 'transmit modules', see 3A001.b.12. For converters and harmonic mixers, designed to extend the operating or frequency range of signal analysers, signal generators, network analysers or microwave test receivers, see 3A001.b.7. Not used. The control status of an item whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.4.a. to 3A001.b.4.e., is determined by the lowest peak saturated power output threshold.

4. a.

Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a fractional bandwidth greater than 15 %, and having any of the following:

1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2. A peak saturated power output greater than 270 W (54,3 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4. A peak saturated power output greater than 90 W (49,54 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz with a fractional bandwidth greater than 10 %, and having any of the following:

1. A peak saturated power output greater than 70 W (48,45 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz;

2. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz;

3. A peak saturated power output greater than 30 W (44,77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or

4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz;

Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

Rated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a fractional bandwidth of greater than 10 %;

Rated for operation at frequencies exceeding 43,5 GHz and having any of the following:

1. A peak saturated power output greater than 0,2 W (23 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a fractional bandwidth of greater than 10 %;

2. A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a fractional bandwidth of greater than 5 %; or

3. A peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 90 GHz;

Not used;

5. Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs and having any of the following:

5. a.

A band-pass bandwidth of more than 0,5 % of centre frequency; or

A band-stop bandwidth of less than 0,5 % of centre frequency;

6. Not used;

7. Converters and harmonic mixers that are any of the following:

7. a.

Designed to extend the frequency range of signal analysers beyond 110 GHz;

Designed to extend the operating range of signal generators as follows:

1. Beyond 110 GHz;

2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 110 GHz;

Designed to extend the operating range of network analysers as follows:

1. Beyond 110 GHz;

2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 110 GHz;

3. Not used;

Designed to extend the frequency range of microwave test receivers beyond 110 GHz;

8.Note: Microwave power amplifiers containing vacuum electronic devices specified in 3A001.b.1. and having all of the following: 3A001.b.8. does not control equipment designed or rated for operation in any frequency band which is allocated by the ITU for radio-communications services, but not for radio-determination.

8. a.

Operating frequencies above 3 GHz;

An average output power to mass ratio exceeding 80 W/kg; and

A volume of less than 400 cm3;

9. Technical Notes: 1.2.

Microwave power modules (MPM) consisting of, at least, a travelling wave vacuum electronic device, a monolithic microwave integrated circuit (MMIC) and an integrated electronic power conditioner and having all of the following: For the purposes of 3A001.b.9.a. the 'turn-on time' refers to the time from fully-off to fully operational, i.e., it includes the warm-up time of the MPM. For the purposes of 3A001.b.9.b., the following example is provided to calculate the volume: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm3/W = 200 cm3.

9. a.

A 'turn-on time' from off to fully operational in less than 10 seconds;

A volume less than the maximum rated power in Watts multiplied by 10 cm3/W; and

An instantaneous bandwidth greater than 1 octave (fmax > 2fmin) and having any of the following:

1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or

2. A frequency greater than 18 GHz;

10. Technical Note:

Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz; For the purposes of 3A001.b.10., F is the offset from the operating frequency in Hz and f is the operating frequency in MHz.

11. Technical Note: N.B.

'Frequency synthesizer' electronic assemblies having a frequency switching time as specified by any of the following: For the purposes of 3A001.b.11., a 'frequency synthesizer' is any kind of frequency source, regardless of the actual technique used, providing a multiplicity of simultaneous or alternative output frequencies, from one or more outputs, controlled by, derived from or disciplined by a lesser number of standard (or master) frequencies. For general purpose signal analysers, signal generators, network analysers and microwave test receivers, see 3A002.c., 3A002.d., 3A002.e. and 3A002.f., respectively.

11. a.

Less than 143 ps;

Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz;

Not used;

Less than 500 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31,8 GHz but not exceeding 37 GHz;

Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 37 GHz but not exceeding 75 GHz;

Less than 100 μs for any frequency change exceeding 5,0 GHz within the synthesised frequency range exceeding 75 GHz but not exceeding 90 GHz; or

Less than 1 ms within the synthesised frequency range exceeding 90 GHz;

12. Technical Notes:

'Transmit/receive modules', 'transmit/receive MMICs', 'transmit modules', and 'transmit MMICs', rated for operation at frequencies above 2,7 GHz and having all of the following: For the purposes of 3A001.b.12.:

12. a.

A peak saturated power output (in watts), Psat, greater than 505,62 divided by the maximum operating frequency (in GHz) squared [Psat>505,62 W × GHz2/fGHz2] for any channel;

A fractional bandwidth of 5 % or greater for any channel;

Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15cm × GHz × N/fGHz] where N is the number of transmit or transmit/receive channels; and

An electronically variable phase shifter per channel.

12. Technical Notes:

1. A 'transmit/receive module' is a multifunction electronic assembly that provides bi-directional amplitude and phase control for transmission and reception of signals.

2. A 'transmit module' is an electronic assembly that provides amplitude and phase control for transmission of signals.

3. A 'transmit/receive MMIC': is a multifunction MMIC that provides bi-directional amplitude and phase control for transmission and reception of signals.

4. A 'transmit MMIC' is a MMIC that provides amplitude and phase control for transmission of signals.

5. 2,7 GHz should be used as the lowest operating frequency (fGHz) in the formula in 3A001.b.12.c. for transmit/receive or transmit modules that have a rated operation range extending downward to 2,7 GHz and below [d≤15cm × GHz × N/2,7 GHz].

6. 3A001.b.12. applies to 'transmit/receive modules' or 'transmit modules' with or without a heat sink. The value of d in 3A001.b.12.c. does not include any portion of the 'transmit/receive module' or 'transmit module' that functions as a heat sink.

7. 'Transmit/receive modules', or 'transmit modules', or 'transmit/receive MMICs' or 'transmit MMICs' may or may not have N integrated radiating antenna elements where N is the number of transmit or transmit/receive channels.

c.Note:

Acoustic wave devices as follows and specially designed components therefor: 3A001.c. does not control acoustic wave devices that are limited to a single band pass, low pass, high pass or notch filtering, or resonating function.

c.

1. Technical Note:

Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following: For the purposes of 3A001.c.1., 'frequency side-lobe rejection' is the maximum rejection value specified in data sheet.

1. a.

A carrier frequency exceeding 6 GHz;

A carrier frequency exceeding 1 GHz but not exceeding 6 GHz and having any of the following:

1. A 'frequency side-lobe rejection' exceeding 65 dB;

2. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;

3. A bandwidth greater than 250 MHz; or

4. A dispersive delay of more than 10 μs; or

A carrier frequency of 1 GHz or less and having any of the following:

1. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;

2. A dispersive delay of more than 10 μs; or

3. A 'frequency side-lobe rejection' exceeding 65 dB and a bandwidth greater than 100 MHz;

2. Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz;

3. Acoustic-optic signal processing devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;

d.

Electronic devices and circuits containing components, manufactured from superconductive materials, specially designed for operation at temperatures below the critical temperature of at least one of the superconductive constituents and having any of the following:

1. Current switching for digital circuits using superconductive gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10-14 J; or

2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10000;

e. Technical Note:

High energy devices as follows: For the purposes of 3A001.e.4., 'AM0', or 'Air Mass Zero', refers to the spectral irradiance of sun light in the earth's outer atmosphere when the distance between the earth and sun is one astronomical unit (AU).

e.

1. Technical Notes: 1.2.3.4.5.Note:

'Cells' as follows: For the purposes of 3A001.e.1., 'energy density' (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in ohms and the mass in kilograms. For the purposes of 3A001.e.1., a 'cell' is defined as an electrochemical device, which has positive and negative electrodes, an electrolyte, and is a source of electrical energy. It is the basic building block of a battery. For the purposes of 3A001.e.1.a., a 'primary cell' is a 'cell' that is not designed to be charged by any other source. For the purposes of 3A001.e.1.b., a 'secondary cell' is a 'cell' that is designed to be charged by an external electrical source. For the purposes of 3A001.e.1.a., 'continuous power density' (W/kg) is calculated from the nominal voltage multiplied by the specified maximum continuous discharge current in amperes (A) divided by the mass in kilograms. 'Continuous power density' is also referred to as specific power. 3A001.e.1. does not control batteries, including single-cell batteries.

1. a.

'Primary cells' having any of the following at 20 °C;

1. 'Energy density' exceeding 550 Wh/kg and a 'continuous power density' exceeding 50 W/kg; or

2. 'Energy density' exceeding 50 Wh/kg and a 'continuous power density' exceeding 350 W/kg; or

'Secondary cells' having an 'energy density' exceeding 350 Wh/kg at 20 °C;

2.N.B. High energy storage capacitors as follows: SEE ALSO 3A201.a. and the Military Goods Controls.

2.N.B. a.

Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 250 J/kg; and

3. A total energy equal to or more than 25 kJ;

Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 50 J/kg;

3. A total energy equal to or more than 100 J; and

4. A charge/discharge cycle life equal to or more than 10000;

3.N.B.Note: Superconductive electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following: SEE ALSO 3A201.b. 3A001.e.3. does not control superconductive electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment.

3.N.B.Note: a.

Energy delivered during the discharge exceeding 10 kJ in the first second;

Inner diameter of the current carrying windings of more than 250 mm; and

c. Technical Note:

Rated for a magnetic induction of more than 8 T or 'overall current density' in the winding of more than 300 A/mm2; For the purposes of 3A001.e.3.c., 'overall current density' is the total number of ampere-turns in the coil (i.e., the sum of the number of turns multiplied by the maximum current carried by each turn) divided by the total cross-section of the coil (comprising the superconducting filaments, the metallic matrix in which the superconducting filaments are embedded, the encapsulating material, any cooling channels, etc.).

4. Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are space-qualified, having a minimum average efficiency exceeding 20 % at an operating temperature of 301 K (28 °C) under simulated 'AM0' illumination with an irradiance of 1367 watts per square metre (W/m2);

f.

Rotary input type absolute position encoders having an accuracy equal to or less (better) than 1,0 second of arc and specially designed encoder rings, discs or scales therefor;

g.Note 1:Note 2: Technical Note:

Solid-state pulsed power switching thyristor devices and 'thyristor modules', using either electrically, optically, or electron radiation controlled switch methods and having any of the following: 3A001.g. includes: 3A001.g. does not control thyristor devices and 'thyristor modules' incorporated into equipment designed for civil railway or civil aircraft applications. For the purposes of 3A001.g., a 'thyristor module' contains one or more thyristor devices.

g.

1. A maximum turn-on current rate of rise (di/dt) greater than 30000 A/μs and off-state voltage greater than 1100 V; or

2. A maximum turn-on current rate of rise (di/dt) greater than 2000 A/μs and having all of the following:

2. a.

An off-state peak voltage equal to or greater than 3000 V; and

A peak (surge) current equal to or greater than 3000 A.

Silicon Controlled Rectifiers (SCRs);

Electrical Triggering Thyristors (ETTs);

Light Triggering Thyristors (LTTs);

Integrated Gate Commutated Thyristors (IGCTs);

Gate Turn-off Thyristors (GTOs);

MOS Controlled Thyristors (MCTs);

Solidtrons.

h.Note 1:Note 2:Note 3: Technical Note:

Solid-state power semiconductor switches, diodes, or 'modules', having all of the following: Repetitive peak off-state voltage in 3A001.h. includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage. 3A001.h. includes: 3A001.h. does not control switches, diodes, or 'modules', incorporated into equipment designed for civil automobile, civil railway or civil aircraft applications. For the purposes of 3A001.h., 'modules' contain one or more solid-state power semiconductor switches or diodes.

h.

1. Rated for a maximum operating junction temperature greater than 488 K (215 °C);

2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

3. Continuous current greater than 1 A.

Junction Field Effect Transistors (JFETs);

Vertical Junction Field Effect Transistors (VJFETs);

Metal Oxide Semiconductor Field Effect Transistors (MOSFETs);

Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOSFET);

Insulated Gate Bipolar Transistor (IGBT);

High Electron Mobility Transistors (HEMTs);

Bipolar Junction Transistors (BJTs);

Thyristors and Silicon Controlled Rectifiers (SCRs);

Gate Turn-Off Thyristors (GTOs);

Emitter Turn-Off Thyristors (ETOs);

PiN Diodes;

Schottky Diodes.

i.Note: Technical Note:

Intensity, amplitude, or phase electro-optic modulators, designed for analogue signals and having any of the following: 3A001.i. includes electro-optic modulators having optical input and output connectors (e.g., fibre-optic pigtails). For the purposes of 3A001.i., a 'half-wave voltage' ('Vπ') is the applied voltage necessary to make a phase change of 180 degrees in the wavelength of light propagating through the optical modulator.

i.

1. A maximum operating frequency of more than 10 GHz but less than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:

1. a.

A 'half-wave voltage' ('Vπ') less than 2,7 V when measured at a frequency of 1 GHz or below; or

A 'Vπ' of less than 4 V when measured at a frequency of more than 1 GHz; or

2. A maximum operating frequency equal to or greater than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:

2. a.

A 'Vπ' less than 3,3 V when measured at a frequency of 1 GHz or below; or

A 'Vπ' less than 5 V when measured at a frequency of more than 1 GHz.

2:N.B.Note 3:3A0013A002

a.

Recording equipment and oscilloscopes as follows:

1. Not used;

2. Not used;

3. Not used;

4. Not used;

5. Not used;

6. Technical Notes:

Digital data recorders having all of the following: For the purposes of 3A002.a.6.:

6. a.

A sustained 'continuous throughput' of more than 6,4 Gbit/s to disk or solid-state drive memory; and

Signal processing of the radio frequency signal data while it is being recorded;

6. Technical Notes:

1. For recorders with a parallel bus architecture, the 'continuous throughput' rate is the highest word rate multiplied by the number of bits in a word.

2. 'Continuous throughput' is the fastest data rate the instrument can record to disk or solid-state drive memory without the loss of any information while sustaining the input digital data rate or digitizer conversion rate.

7. Real-time oscilloscopes havingall of the following:

7. a.

A vertical root-mean-square (rms) noise voltage of less than 2 % of full-scale at the vertical scale setting that provides the lowest noise value; and

b.Note: Technical Notes:

An 'upper 3dB frequency' greater than 90 GHz on any channel. 3A002.a.7. does not control equivalent-time sampling oscilloscopes. For the purposes of 3A002.a.7.b.:

1. 'Upper 3dB frequency' is the greater of:

1. a.

The specified 3dB bandwidth of the oscilloscope; or

The maximum upper end of the frequency range of any 'movable bandwidth window'.

2. 'Movable bandwidth window' is a bandpass filter with a user-definable centre frequency or span.

b.

Not used;

c.

Signal analysers as follows:

1. Signal analysers having a 3 dB resolution bandwidth (RBW) exceeding 40 MHz anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz;

2. Signal analysers having a Displayed Average Noise Level (DANL) less (better) than -160 dBm/Hz anywhere within the frequency range exceeding 43,5 GHz but not exceeding 110 GHz;

3. Signal analysers having a frequency exceeding 110 GHz;

4.Note: Signal analysers having all of the following: 3A002.c.4. does not control those signal analysers using only constant percentage bandwidth filters (also known as octave or fractional octave filters).

4. a.

'Real-time bandwidth' exceeding 520 MHz; and

b. Technical Notes: 1.2.3.4.

Having any of the following: For the purposes of 3A002.c.4.a., 'real-time bandwidth' is the widest frequency range for which the analyser can continuously transform time-domain data entirely into frequency-domain results, using a Fourier or other discrete time transform that processes every incoming time point, without a reduction of measured amplitude of more than 3 dB below the actual signal amplitude caused by gaps or windowing effects, while outputting or displaying the transformed data. For the purposes of 3A002.c.4.b.1., probability of discovery is also referred to as probability of intercept or probability of capture. For the purposes of 3A002.c.4.b.1., the duration for 100 % probability of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty. For the purposes of 3A002.c.4.b.2., a 'frequency mask trigger' is a mechanism where the trigger function is able to select a frequency range to be triggered on as a subset of the acquisition bandwidth while ignoring other signals that may also be present within the same acquisition bandwidth. A 'frequency mask trigger' may contain more than one independent set of limits.

1. 100 % probability of discovery with less than a 3 dB reduction from full amplitude due to gaps or windowing effects of signals having a duration of 8 μs or less; or

2. A 'frequency mask trigger' function with 100 % probability of trigger (capture) for signals having a duration of 8 μs or less;

5. Not used;

d.Note 1:Note 2: Technical Note:

Signal generators having any of the following: 3A002.d.includes arbitrary waveform and function generators. 3A002.d. does not control equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result. For the purposes of 3A002.d., the maximum output frequency of an arbitrary waveform or function generator is calculated by dividing the sample rate, in samples/second, by a factor of 2,5.

d.

1. Technical Note:

Specified to generate pulse-modulated signals having all of the following, anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz: For the purposes of 3A002.d.1.a, 'pulse duration' is defined as the time interval from the point on the leading edge that is 50 % of the pulse amplitude to the point on the trailing edge that is 50 % of the pulse amplitude.

1. a.

'Pulse duration' of less than 25 ns; and

On/off ratio equal to or exceeding 65 dB;

2. An output power exceeding 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 110 GHz;

3. A frequency switching time as specified by any of the following:

3. a.

Not used;

Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz;

Not used;

Less than 500 μs for any frequency change exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz;

Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 75 GHz; or

Not used;

Less than 100 μs for any frequency change exceeding 5,0 GHz within the frequency range exceeding 75 GHz but not exceeding 110 GHz;

4. Technical Note:

A single sideband (SSB) phase noise, in dBc/Hz, specified as being any of the following: For the purposes of 3A002.d.4., F is the offset from the operating frequency in Hz and f is the operating frequency in MHz;

4. a.

Less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 110 GHz; or

Less (better) than -(206 - 20log10f) anywhere within the range of 10 kHz< F≤ 100 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 110 GHz;

5. Technical Note:

An 'RF modulation bandwidth’ of digital baseband signals as specified by any of the following: For the purposes of 3A002.d.5., 'RF modulation bandwidth' is the Radio Frequency (RF) bandwidth occupied by a digitally encoded baseband signal modulated onto an RF signal. It is also referred to as information bandwidth or vector modulation bandwidth. I/Q digital modulation is the technical method for producing a vector-modulated RF output signal, and that output signal is typically specified as having an 'RF modulation bandwidth'.

5. a.

Exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz;

Exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz;

Exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 75 GHz; or

Exceeding 5,0 GHz within the frequency range exceeding 75 GHz but not exceeding 110 GHz; or

6. A maximum frequency exceeding 110 GHz;

e.

Network analysers having any of the following:

1. An output power exceeding 100 mW (20 dBm) anywhere within the operating frequency range exceeding 43,5 GHz but not exceeding 110 GHz;

2. Not used;

3. Technical Note:

'Nonlinear vector measurement functionality' at frequencies exceeding 50 GHz but not exceeding 110 GHz; or For the purposes of 3A002.e.3., 'nonlinear vector measurement functionality' is an instrument’s ability to analyse the test results of devices driven into the large-signal domain or the non-linear distortion range.

4. A maximum operating frequency exceeding 110 GHz;

f.

Microwave test receivers having all of the following:

1. A maximum operating frequency exceeding 110 GHz; and

2. Being capable of measuring amplitude and phase simultaneously;

g.

Atomic frequency standards being any of the following:

1. Space-qualified;

2. Non-rubidium and having a long-term stability less (better) than 1 × 10-11/month; or

3. Non-space-qualified and having all of the following:

3. a.

Being a rubidium standard;

Long-term stability less (better) than 1 × 10-11/month; and

Total power consumption of less than 1 W;

h.N.B. Technical Notes: Note:

Electronic assemblies, modules, or equipment, specified to perform all of the following: Digital data recorders, oscilloscopes, signal analysers, signal generators, network analysers and microwave test receivers, are specified in 3A002.a.6., 3A002.a.7., 3A002.c., 3A002.d., 3A002.e. and 3A002.f., respectively. For the purposes of 3A002.h.: 3A002.h. includes ADC cards, waveform digitizers, data acquisition cards, signal acquisition boards and transient recorders.

h.

1. Analogue-to-digital conversions meeting any of the following:

1. a.

A resolution of 8 bit or more, but less than 10 bit, with a sample rate greater than 1,3 Giga Samples Per Second (GSPS);

A resolution of 10 bit or more, but less than 12 bit, with a sample rate greater than 1,0 GSPS;

A resolution of 12 bit or more, but less than 14 bit, with a sample rate greater than 1,0 GSPS;

A resolution of 14 bit or more, but less than 16 bit, with a sample rate greater than 400 Mega Samples Per Second (MSPS); or

A resolution of 16 bit or more with a sample rate greater than 180 MSPS; and

2. Any of the following:

2. a.

Output of digitised data;

Storage of digitised data; or

Processing of digitised data.

h.N.B. Technical Notes:

1. A resolution of n bit corresponds to a quantisation of 2n levels.

3. For non-interleaved multiple-channel electronic assemblies, modules, or equipment, the sample rate is not aggregated and the sample rate is the maximum rate of any single-channel.

4. For interleaved channels on multiple-channel electronic assemblies, modules, or equipment, the sample rates are aggregated and the sample rate is the maximum combined total rate of all the interleaved channels.

2:N.B.Note 3:3A0013A0023A0033A101

a.

Analogue-to-Digital Converters (ADCs), usable in missiles, designed to meet military specifications for ruggedized equipment;

b.Note:

Accelerators capable of delivering electromagnetic radiation produced by bremsstrahlung from accelerated electrons of 2 MeV or greater, and systems containing those accelerators. 3A101.b. above does not specify equipment specially designed for medical purposes.

2:N.B.Note 3:3A0013A0023A0033A1013A102 Technical Notes: 1.2.3A201

a.

Capacitors having either of the following sets of characteristics:

1. a.

Voltage rating greater than 1,4 kV;

Energy storage greater than 10 J;

Capacitance greater than 0,5 μF; and

Series inductance less than 50 nH; or

2. a.

Voltage rating greater than 750 V;

Capacitance greater than 0,25 μF; and

Series inductance less than 10 nH;

b.Note:

Superconducting solenoidal electromagnets having all of the following characteristics: 3A201.b. does not control magnets specially designed for and exported 'as parts of' medical nuclear magnetic resonance (NMR) imaging systems. The phrase 'as part of' does not necessarily mean physical part in the same shipment; separate shipments from different sources are allowed, provided the related export documents clearly specify that the shipments are dispatched 'as part of' the imaging systems.

b.

1. Capable of creating magnetic fields greater than 2 T;

2. A ratio of length to inner diameter greater than 2;

3. Inner diameter greater than 300 mm; and

4. Magnetic field uniform to better than 1 % over the central 50 % of the inner volume;

c.Note: Technical Notes: 1.2.3.4.

Flash X-ray generators or pulsed electron accelerators having either of the following sets of characteristics: 3A201.c. does not control accelerators that are component parts of devices designed for purposes other than electron beam or X-ray radiation (electron microscopy, for example) nor those designed for medical purposes. The 'figure of merit' (K) is defined as: K = 1,7 × 103V2,65Q V is the peak electron energy in million electron volts. If the accelerator beam pulse duration is less than or equal to 1 μs, then Q is the total accelerated charge in Coulombs. If the accelerator beam pulse duration is greater than 1 μs, then Q is the maximum accelerated charge in 1 μs. Q equals the integral of i with respect to t, over the lesser of 1 μs or the time duration of the beam pulse (Q = ∫ idt), where i is beam current in amperes and t is time in seconds. 'Peak power' = (peak potential in volts) × (peak beam current in amperes). In machines based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of 1 μs or the duration of the bunched beam packet resulting from one microwave modulator pulse. In machines based on microwave accelerating cavities, the peak beam current is the average current in the time duration of a bunched beam packet.

c.

1. a.

An accelerator peak electron energy of 500 keV or greater but less than 25 MeV; and

With a 'figure of merit' (K) of 0,25 or greater; or

2. a.

An accelerator peak electron energy of 25 MeV or greater; and

A 'peak power' greater than 50 MW.

2:N.B.Note 3:3A0013A0023A0033A1013A102 Technical Notes: 1.2.3A2013A225N.B.1.N.B.2.

a.

Multiphase output providing a power of 40 VA or greater;

b.

Operating at a frequency of 600 Hz or more; and

c.

Frequency control better (less) than 0,2 %.

2:N.B.Note 3:3A0013A0023A0033A1013A102 Technical Notes: 1.2.3A2013A225N.B.1.N.B.2.Note:

1. They need to be returned to the original manufacturer to make the enhancements or release the constraints;

2. They require software as specified in 3D225 to enhance or release the performance to meet the characteristics of 3A225; or

3. They require technology in the form of keys or codes as specified in 3E225 to enhance or release the performance to meet the characteristics of 3A225.

2:N.B.Note 3:3A0013A0023A0033A1013A102 Technical Notes: 1.2.3A2013A225N.B.1.N.B.2.Note: Technical Notes: 1.2.3A226

a.

Capable of continuously producing, over a time period of 8 hours, 100 V or greater with current output of 500 A or greater; and

b.

Current or voltage stability better than 0,1 % over a time period of 8 hours.

2:N.B.Note 3:3A0013A0023A0033A1013A102 Technical Notes: 1.2.3A2013A225N.B.1.N.B.2.Note: Technical Notes: 1.2.3A2263A227

a.

Capable of continuously producing, over a time period of 8 hours, 20 kV or greater with current output of 1 A or greater; and

b.

Current or voltage stability better than 0,1 % over a time period of 8 hours.

2:N.B.Note 3:3A0013A0023A0033A1013A102 Technical Notes: 1.2.3A2013A225N.B.1.N.B.2.Note: Technical Notes: 1.2.3A2263A2273A228

a.Note:

Cold-cathode tubes, whether gas filled or not, operating similarly to a spark gap, having all of the following characteristics: 3A228.a. includes gas krytron tubes and vacuum sprytron tubes.

a.

1. Containing three or more electrodes;

2. Anode peak voltage rating of 2,5 kV or more;

3. Anode peak current rating of 100 A or more; and

4. Anode delay time of 10 μs or less;

b.

Triggered spark-gaps having both of the following characteristics:

1. An anode delay time of 15 μs or less; and

2. Rated for a peak current of 500 A or more;

c.

Modules or assemblies with a fast switching function, other than those specified in 3A001.g. or 3A001.h., having all of the following characteristics:

1. Anode peak voltage rating greater than 2 kV;

2. Anode peak current rating of 500 A or more; and

3. Turn-on time of 1 μs or less.

2:N.B.Note 3:3A0013A0023A0033A1013A102 Technical Notes: 1.2.3A2013A225N.B.1.N.B.2.Note: Technical Notes: 1.2.3A2263A2273A2283A229N.B.

a.

Detonator firing sets (initiator systems, firesets), including electronically-charged, explosively-driven and optically-driven firing sets, other than those specified in 1A007.a., designed to drive multiple controlled detonators specified in 1A007.b.;

b.Note:

Modular electrical pulse generators (pulsers) having all of the following characteristics: 3A229.b. includes xenon flash-lamp drivers.

b.

1. Designed for portable, mobile, or ruggedized-use;

2. Capable of delivering their energy in less than 15 μs into loads of less than 40 ohms;

3. Having an output greater than 100 A;

4. No dimension greater than 30 cm;

5. Weight less than 30 kg; and

6. Specified for use over an extended temperature range 223 K (-50 °C) to 373 K (100 °C) or specified as suitable for aerospace applications.

c.

1. No dimension greater than 35 mm;

1872 more provisions are not shown here; each has its own address.

Versions

2025-09-08

Cited by

Commission Delegated Regulation (EU) 2026/1405 of 26 June 2026 correcting certain language versions of Regulation (EU) 2021/821 of the European Parliament and of the Council setting up a Union regime for the control of exports, brokering, technical assistance, transit and transfer of dual-use items Regulation · Grade B
The Dutch, Greek, Slovenian and Swedish language versions of Annex I to Regulation (EU) 2021/821 contain an error in Part IV, point 2B510.b.2 as regards the characteristics of the vacuum. The error was introduced by Commission Delegated Regulation (EU) 2025/2003 and affects the substance of that provision.
Commission Delegated Regulation (EU) 2026/1405 of 26 June 2026 correcting certain language versions of Regulation (EU) 2021/821 of the European Parliament and of the Council setting up a Union regime for the control of exports, brokering, technical assistance, transit and transfer of dual-use items Regulation · Grade B
The Irish and Swedish language versions of Annex I to Regulation (EU) 2021/821 also contain an error in Part V, point 3B501.n.4 as regards the type of metal. The error was introduced by Delegated Regulation (EU) 2025/2003 and affects the substance of that provision.
Commission Delegated Regulation (EU) 2026/1405 of 26 June 2026 correcting certain language versions of Regulation (EU) 2021/821 of the European Parliament and of the Council setting up a Union regime for the control of exports, brokering, technical assistance, transit and transfer of dual-use items Regulation · Grade B
In addition, the Swedish language version of Annex I to Regulation (EU) 2021/821 contains an error in Part V, point 3B501.n.7.b.1 as regards the type of filter. The error was introduced by Delegated Regulation (EU) 2025/2003 and affects the substance of that provision.
INFORMATION NOTE Regulation (EU) 2021/821 of the European Parliament and of the Council of 20 May 2021 setting up a Union regime for the control of exports, brokering, technical assistance, transit and transfer of dual-use items: Information on measures adopted by Member States C/2026/2595 Regulation · Grade B
(Regulation No 645 of 25 September 2007 - 'Regulation on the National List of Strategic Goods and Services', Article 3(1) of the Law on the Circulation of Strategic Goods of 21 June 2007). Lithuania The export of dual-use items not listed in Annex I of the Regulation may be subject to authorisation or prohibited for reasons of public security, including the prevention of acts of terrorism, or human rights considerations. (The Law of the Republic of Lithuania on the Control of Strategic Goods No. XIV-1738, December 22, 2022). The export of a list of dual-use items not included in Annex I is pro